Hidden stochastic nature of a single bacterial motor

The rotary flagellar motor of Escherichia coli bacterium switches stochastically between the clockwise (CW) and counterclockwise (CCW) direction. We found that the CW and CCW intervals could be described by a gamma distribution, suggesting the existence of hidden Markov steps preceding each motor switch. Power spectra of time series of switching events exhibited a peaking frequency instead of the Lorentzian profile expected from standard kinetic two-state models. Our analysis indicates that the number of hidden steps may be a key dynamical parameter underlying the switching process in a single bacterial motor as well as in large cooperative molecular systems.     

Correlation between Imprint and Long-Time Polarization Reversal under Low Fields in Ferroelectric Thin Films

Time interval of slow polarization reversal in ferroelectric thin films is broadened over more than two decades to disobey the classical Kolmogorov-A vrami-Ishibashi （KAI） equation as the applied field approaches the coercive field of domain switching. The assumption of a Lorentzian distribution of logarithmic waiting times of reversed domain nucleation in this equation can resolve this dilemma. In our work, we explain this equation from the coercive-voltage distribution in thin films, and derive a similar function to describe slow polarization reversal from the consideration of a long-time imprint effect rather than the KAI model.     

Polarization switching properties of spray deposited CsNO3: PVA composite films

The ferroelectric and switching properties of spray deposited cesium nitrate: poly (vinyl alcohol) composite films at different substrate temperatures (T _s ) have been studied. The optimum value of remanent polarization was obtained in the film deposited at T _s =200°C, which may be due to larger structural distortion (c/a ratio) and less porosity as revealed by x-ray diffraction and field emission scanning electron microscope (FESEM) analysis. The switching current transients have been analyzed by nucleation limited switching model (NLS) with the Lorentzian distribution function. This model gives excellent agreement with the experimental polarization current throughout the whole time range. The switching parameters were determined in the composite films deposited at different T _s and found to be optimum at T _s =200°C. The effect of pulse amplitude on the domain switching properties has also been studied and analyzed. The peak value of polarization current exhibits an exponential dependence on the external applied field.     

Switching current noise and relaxation of ferroelectric domains

We simulate field-induced nucleation and switching of domains in a three-dimensional model of ferroelectrics with quenched disorder and varying domain sizes. We study (1) bursts of the switching current at slow driving along the hysteresis loop (electrical Barkhausen noise) and (2) the polarization reversal when a strong electric field was applied and back-switching after the field was removed. We show how these processes are related to the underlying structure of domain walls, which in turn is controlled by the pinning at quenched local electric fields. When the depolarization fields of bound charges are properly screened we find that the fractal switching current noise may appear with two distinct universal behaviors. The critical depinning of plane domain walls determines the universality class in the case of weak random fields, whereas for large randomness the massive nucleation of domains in the bulk leads to different scaling properties. In both cases the scaling exponents decay logarithmically when the driving frequency is increased. The polarization reverses in the applied field as a power-law, while its relaxation in zero field is a stretch exponential function of time. The stretching exponent depends on the strength of pinning. The results may be applicable for uniaxial relaxor ferroelectrics, such as doped SBN:Ce. Received 7 February 2002 / Received in final form 10 April 2002 Published online 9 July 2002     

Decomposition of 1/f noise in Al(x)Ga(1-x)As/GaAs Hall devices

We present a systematic study of the low-frequency noise in micron and submicron Hall devices made from Al(x)Ga(1-x)As/GaAs heterostructures. In a sample with feature size as small as 0.45 microm we observe a nonmonotonic temperature dependence of the noise power spectral densities (PSD's) at temperatures where surface states and deep-level excitations are frozen out. Near the temperature where the noise peaks, the PSD's can be described by a thermally activated two-level random telegraph signal, i.e., the 1/f noise originating from switching events in the highly doped Al(x)Ga(1-x) layer is resolved into a single Lorentzian spectrum.     

Josephson结开关电流分布的测量方案探讨

Josephson结的开关电流存在着一定的分布.利用开关电流的分布,我们可以推算出Josephson结的逸出率.进一步结合合适的微波辐照,还可以获得结的诸如能级、拉比振荡等许多相关的量子特性.Josephson结的开关电流分布的获得,对于研究超导量子比特,包括相位量子比特、电荷量子比特、磁通量子比特和涡流量子比特以及他们的组合量子比特都有着重要意义.我们提出了三种测量方案,对这三种方案进行了比较,并初步的对自制的NbN/AlNx/NbN Josephson结的开关电流进行了多次(104次)测量,得到一定温度下的开关电流分布的直方图.针对三种方案各自的优缺点及已有的结果,我们提出了需要进一步改进的措施,对于下一步开展在极低温下(mK)Josephson结的开关电流分布的测量有着重要的意义.     

Distinct ferroelectric domain switching dynamics in epitaxial BiFeO3 (001) capacitors depending on the bias polarity

Understanding ferroelectric domain switching dynamics at the nanoscale is a great of importance in the viewpoints of fundamental physics and technological applications. Here, we investigated the intriguing polarity-dependent switching dynamics of ferroelectric domains in epitaxial BiFeO₃ (001) capacitors using transient switching current measurement and piezoresponse force microscopy. We observed the distinct behavior of nucleation and domain wall motion depending on the polarity of external electric bias. When applying the negative bias to the top electrode, the sideways domain wall motion initiated by only few nuclei was dominant to polarization switching. However, when applying the positive bias, most of domains started to grow from the pre-existed pinned domains and their growth velocity was much smaller. We suggest that the observed two distinct domain switching behavior is ascribed to the interfacial defect layer.     

偶极相互作用对自旋轨道耦合自旋-1凝聚体中磁畴分布的影响

研究准一维简谐势阱中存在自旋轨道耦合（SOC）的自旋-1偶极玻色-爱因斯坦凝聚体,数值求解旋量Gross-Pitaevskii方程,给出磁畴的分布。计算结果表明：磁畴结构与偶极-偶极相互作用（DDIs）密切相关,随着自旋轨道耦合强度和磁化强度的增强,原来的空间对称分布被破坏,随之出现新的分布模式。     

Non-Markovian dynamics of two non-coupled qubits interacting with two separate reservoirs with different spectral densities

The dynamics of two non-coupled qubits independently interacting with their reservoirs is solved by the time convolutionless projection operator method. We study two-qubit quantum correlation dynamics for two different types of spectral densities, which are a Lorentzian distribution and an Ohmic spectral density with a Lorentzian-Drude cutoff function. For two qubits initially prepared in the initial Bell state, quantum discord can keep longer time and reach larger values in nonMarkovian reservoirs for the first spectral distribution or by reducing the cutoff frequency for the second case. For the initial Bell-like state, the dynamic behaviors of quantum discord and entanglement are compared. The results show that a long time of quantum correlation can be obtained by adjusting some parameters in experiment and further confirm that the discord can capture quantum correlation in addition to entanglement.     

Noise spectroscopy in the breakdown of the IQHE

Summary The noise spectrum of the magnetoresistivity in the breakdown of the Integral Quantum Hall Effect (IQHE) at high currents is studied in wide high-quality GaAs/AlGaAs heterostructures on thei=2 Hall plateau, in particular for values of current and/or magnetic field at which pronounced steps and striking temporal patterns showing switching between different levels are observed. The noise spectra obtained from data which display switching are compared with the spectra obtained in the absence of switching. By an analysis based on time series simulation, Lorentzian noise components are separated and found to have similar characteristics in both types of data. The authors of this paper have agreed to not receive the proofs for correction.     

Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor

We report reversible resistance switching behaviors in Pt/BiFeO₃/Nb:SrTiO₃ memristor. The resistance of the junctions can be tuned up to about five orders of magnitude by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The high performances are promising for employing ferroelectric junctions in nonvolatile memory and logic devices. The nonvolatile resistance switching behaviors could be attributed to the formation and annihilation of trap centers in the BFO films, resulting in Poole–Frenkel emission for low resistance state and the thermionic emission for high resistance state, respectively.     

Intrinsic distribution of magnetic anisotropy in thin films probed by patterned nanostructures

We demonstrate that the switching field distribution (SFD) in arrays of 50 nm to 5 microm Co/Pd elements, with perpendicular anisotropy, can be explained by a distribution of intrinsic anisotropy rather than any fabrication related effects. Further, simulations of coercivity and SFD versus element size allow the distribution of intrinsic anisotropy to be quantified in highly exchanged coupled thin films where the reversal mechanism is one of nucleation followed by rapid domain wall motion.     

Three‐Dimensional,Time‐Resolved Profiling of Ferroelectric Domain Wall Dynamics by Spectral‐Domain Optical Coherence Tomography

We apply here spectral‐domain optical coherence tomography (SD‐OCT) for the precise detection and temporal tracking of ferroelectric domain walls (DWs) in magnesium‐doped periodically poled lithium niobate (Mg:PPLN). We reproducibly map static DWs at an axial (depth) resolution down to ～ 0.6 μm, being located up to 0.5 mm well inside the single crystalline Mg:PPLN sample. We show that a full 3‐dimensional (3D) reconstruction of the DW geometry is possible from the collected data, when applying a special algorithm that accounts for the nonlinear optical dispersion of the material. Our OCT investigation provides valuable reference information on the DWs’ polarization charge distribution, which is known to be the key to the electrical conductivity of ferroelectric DWs in such systems. Hence, we carefully analyze the SD‐OCT signal dependence both when varying the direction of incident polarization, and when applying electrical fields along the polar axis. Surprisingly, the large backreflection intensities recorded under extraordinary polarization are not affected by any electrical field, at least for field strengths below the switching threshold, while no significant signals above noise floor are detected under ordinary polarization. Finally, we employed the high‐speed SD‐OCT setup for the real‐time DW tracking upon ferroelectric domain switching under high external fields.     

Microscopic origin of asymmetric magnetization reversal of Co/Pt multilayers with perpendicular magnetic anisotropy

We have comprehensively investigated asymmetric magnetization reversal behaviors of (x-Å Co/7.7 Å Pt)₅ multilayers (x = 3.1 and 4.7) with perpendicular magnetic anisotropy. Our direct observation of magnetic domain structures by means of magneto-optical microscopy reveals that the asymmetry arises both from nucleation and wall-motion processes. An asymmetric nucleation behavior is observed, which could be originated from the preexisting non-reversed domains which might have a reproducible or random spatial distribution, controllable by tuning the field profile. An asymmetric wall-motion behavior stemming from asymmetric stripe domain evolution is also observed.     

Effect of humidity on domain switching behaviors of BaTiO3 single crystal under sustained load

Domain switching behaviors of BaTiO₃ single crystal in humidity conditions were studied by polarized light microscopy (PLM) and atomic force microscopy (AFM). The results showed that the low humidity has no effect on both a-b domain configuration and a-c domain configuration under sustained load. However, the high humidity can promote a domain switching to c domain under sustained load. The difference of energy reduction induced by H₂O molecules between c domains and a(b) domains leads to this phenomenon.     

High spatial resolution multi-site EPR oximetry. The use of convolution-based fitting method

We describe a new method to enhance the spatial resolution of multi-site electron paramagnetic resonance (EPR) oximetry. The method is suitable for any shape (density distribution function) of a solid paramagnetic material implanted in tissue. It corrects distortions of lineshapes caused by the gradient and thus overcomes limitations of previous multi-site EPR oximetry methods that restricted the ratio of the particle size to the distance between sites. The new method is based on consecutive applications of magnetic field gradients with the same direction but with a different magnitude and uses a convolution-based fitting algorithm to derive Lorentzian EPR linewidths of each individual peak of the EPR spectrum. The method is applicable for any particulate EPR oxygen sensitive materials whose EPR spectra can be approximated by a Lorentzian function or a superposition of Lorentzian functions. By incorporating this model of the lineshape in the data processing, we are able to decrease significantly the number of parameters needed for the calculations and to recover the oxygen concentration, even from quite noisy spectra. We (i) describe our method and the data-processing algorithm, (ii) demonstrate our approach in model and in vivo experiments, and (iii) discuss the limitations.     

Anisotropic polarization response of polar nanostructures in relaxor-type lead lanthanum zirconate titanate ferroelectric ceramics

Polar nanoregions (PNRs) in relaxor-type PLZT ferroelectric ceramics and their response to the out-of-plane, in-plane electric fields were investigated by the high-resolution piezoresponse force microscopy. Anisotropic polarization switching kinetic behaviors of PNRs were found in relaxor PLZT ceramics. Normal, stable ferroelectric domain states were formed through the coalescence of PNRs in the out-of-plane field, while in the high in-plane electric field, the polarization dynamic behaviors of PNRs show spatial inhomogeneity due to the anisotropy random fields in the ferroelectric PLZT ceramics.     

Modulation of noise in submicron GaAs/AlGaAs hall devices by gating

We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 to 60 K. A large variety of noise spectra, from 1/f to Lorentzian, are obtained by gating the Hall devices. The noise level can be reduced by up to several orders of magnitude with a moderate gate voltage of 0.2 V, whereas the carrier density increases less than 60% in the same range. The significant dependence of the Hall noise spectra on temperature and gate voltage is explained in terms of the switching processes related to impurities in n-AlGaAs.     

Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

In this study, the unipolar resistive switching(URS) and bipolar resistive switching(BRS) are demonstrated to be coexistent in the Ag/Zn O/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies(VO) and metal-Ag conducting filaments(CFs) respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching(RS)characteristics(e.g., forming and switching voltages, reset current and resistance states) between these two modes based on VO- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.