稀土对金属纳米粒子-介质复合薄膜(Ag-BaO)光电发射性能的增强

用真空蒸发沉积的方法制备了掺杂稀土的金属纳米粒子介质复合薄膜(Ag-BaO薄膜).与不掺杂稀土的Ag-BaO薄膜相比,其光电发射能力提高了近40%.透射电镜分析表明,掺杂稀土后,Ag-BaO薄膜中的Ag纳米粒子明显细化、球化、密度增大.这表明Ag纳米粒子的细化,使得其在光作用下,光电子更容易通过隧道效应穿过界面位垒逸出,导致光电发射能力增强     

Ag-BaO薄膜内场助光电发射增强现象研究

通过在Ag-BaO薄膜表面真空沉积10nm厚的银电极,成功制备了内场助结构Ag-BaO光电阴极.测试结果显示,Ag-BaO薄膜光电发射电流随内场助偏压的增大而上升.理论分析表明,Ag-BaO薄膜内场助光电发射增强现象产生的机理在于内场助作用下Ag微粒和BaO介质间等效界面位垒的减小及薄膜表面真空能级的相对下降. 关键词： 内场助光电发射 能带弯曲 金属超微粒子 Ag-BaO薄膜     

外场电压和Ag纳米尺寸对来自Ag的光电发射谱的影响

研究外场电压和纳米银粒子的尺寸对来自镶嵌在BaO薄膜中的纳米银粒子的光电发射的影响。在不同电压和不同尺寸条件下，计算了波长范围在 0.2到0.8μm的光电发射谱。给出了光电发射阈值对外场电压和纳米银粒子的尺寸依赖关系。同时认为在可见光范围中出现的光电发射是由于纳米银粒子的光学共振吸收所形成。这样的讨论有助于制备场助Ag-BaO光电薄膜的制备和工艺优化。     

Ag-BaO薄膜在垂直表面电场作用下的光吸收增强

Ag-BaO薄膜是金属纳米微粒埋藏于半导体介质中的功能复合薄膜,它具有超快的光电时间响应,可以检测超短激光脉冲,在Ag-BaO薄膜表面加入垂直电场,可以提高薄膜的光电发射效率,在垂直表面电场作用下近紫外波段光吸收有较明显增强现象,在波长λ=303nm处15V电压作用下光吸收增强6.5%,30V电压作用下增强18%。这种光吸收增强是由于在电场作用下,薄膜的能带结构发生倾斜,以及在强电场下能级分裂。光吸收涉及被激发电子在倾斜能带间隧穿几率的增加,和被激发电子在这些分裂能级间的跃迁。     

金纳米粒子掺杂DNA-CTMA-DPFP薄膜的表面增强拉曼散射特性

采用柠檬酸三钠还原氯金酸和离子交换法制备金纳米粒子掺杂DNA-CTMA材料,利用钯催化反应合成9,9-二乙基-2,7-二-(4-吡啶)芴荧光染料(DPFP),将DPFP与DNA-CTMA混合后,旋凃制备金纳米粒子掺杂的DNA-CTMA-DPFP薄膜样品。通过吸收光谱、荧光光谱和拉曼光谱的测量,研究了薄膜样品的光学特性和表面增强拉曼散射(SERS)特性。实验结果表明,薄膜样品在300～360 nm的吸收主要来自DPFP,在500～700 nm的吸收来自样品中金纳米粒子的局域表面等离子共振;样品在370,386,408 nm处的荧光峰分别对应DPFP的S₁₀-S₀₀、S₁₀-S₀₁和S₁₀-S₀₂能级的电子振动跃迁;在785 nm激光激发下,薄膜样品的拉曼散射主要来自DPFP分子,随着金纳米粒子掺杂比的增大,DPFP分子的拉曼散射峰强度逐渐增强。因此,金纳米粒子掺杂DNA-CTMA薄膜适合作为多种染料分子的SERS基底。     

TiO_2/Sm~(3+)下转换薄膜的制备及其在染料敏化太阳能电池中的应用

采用溶胶-凝胶法制备了TiO2/Sm3+下转换薄膜,利用其下转换特性将紫外光转换为可见光,提高了可见光光照强度。利用X射线衍射和荧光光谱对TiO2/Sm3+粉体进行了表征,并对TiO2/Sm3+下转换薄膜进行了荧光光谱测试和紫外-可见分光光度计测试。荧光光谱显示,TiO2/Sm3+薄膜在受到395 nm紫外光照射时可发射出540~600 nm连续波长的可见光,具有下转换特性。二层TiO2/Sm3+下转换薄膜的可见光透过率与单纯的TiO2薄膜基本相同,利用其下转换特性使电池短路电流提高了13.2%,光电转换率提高了16.2%。     

金纳米粒子自组装薄膜的光谱学研究

采用柠檬酸钠还原氯金酸制备了金胶体，通过静电自组装制备了金纳米粒子薄膜，利用紫外-可见光吸收光谱等对金纳米粒子薄膜进行了光谱学研究，紫外-可见光吸收光谱表明所制备的金溶胶为单分散体系，根据自组装薄膜的X-射线衍射谱，由谢乐公式估算金纳米粒子的粒径约为21nm；X-射线光电子能谱显示氯金酸的还原反应比较完全，金主要以Au^0的价态存在，金胶体粒子通过静电吸引机制组装到PDDA改性的衬底表面；紫外-可见光吸收光谱和表面增强拉曼光谱显示，由于粒子间的电磁耦合，自组装金纳米粒子薄膜表现出协同等离子体共振吸收行为和表面增强拉曼散射效应。     

基于超分子结构共掺杂纳米复合薄膜的制备与荧光特性

为改善功能分了的特性,提出一种基于金属纳米粒子-偶氮染料复合物共掺杂超分子结构功能材料的设计新方法.并依照此方法制备出复合材料,观测了其显微结构,测量了其紫外-可见光吸收,研究了该超分子结构复合体系的荧光特性.实验发现,由于金属银纳米粒子的掺杂,使得超分子结构复合体系中功能分子甲基橙在溶液态体系的荧光强度增强近5倍,而在两种不同结构(共混结构和包覆结构)的薄膜态超分子结构体系中,其荧光强度分别被猝灭15%和20%.研究结果表明,复合膜中采用超分子结构完全能够改善功能分子的特性.     

金纳米薄膜的荧光光谱特性

采用电化学方法制备了胶体盒纳米球状颗粒,并利用自组装方法在石英玻璃村底上镀制了金纳米薄膜。在室温下测得其紫外-可见吸收光谱和荧光发射光谱。在吸收光谱中观察到两个吸收峰,其中610nm、处的吸收峰来源于凝聚金纳米颗粒纵向的表面等离子体共振。在荧光发射光谱中也观察到与纵向表面等离子体共振有关的长波段的发射峰。增加激励光强度或增加薄膜中金粒子散密度都将导致新荧光发射峰的产生．这表明金纳米薄膜中存在循环多重散射,并由此引发了荧光发射峰数目和强度的变化。     

纳米ZnO和ZnO-SiO2复合薄膜的光学性质研究

通过溶胶凝胶(sol-gel)法分别在玻璃衬底上制备了ZnO纳米薄膜和ZnO-SiO₂纳米复合薄膜,并利用紫外-可见光分光光度计对薄膜的光学性能进行了分析.可见光-紫外透射谱显示,随着ZnO溶胶浓度从0.7mol/L降低到0.006mol/L,制备的ZnO薄膜从只出现一个380nm(对应的光学禁带宽度为3.27eV)左右的吸收边到在380和320nm(对应的光学禁带宽度为3.76eV)左右各出现一个吸收边,并且随着ZnO溶胶浓度的降低,在380—320nm波段内的透过率明显提高.而Z 关键词： 纳米ZnO 2复合薄膜')" href="#">ZnO-SiO₂复合薄膜 溶胶凝胶法 透射率     

“冷沉积”的Ag-BaO薄膜在超短脉冲激光作用下的光电发射

研究了冷沉积制备条件下获得的Ag-BaO薄膜在超短激光脉冲串作用下的光电发射．得到Ag-BaO薄膜的阈值光强为10W/cm²，光量子效率达10^-4数量级．光电流密度与入射光强的关系主要表现为一段曲率随光强增大而逐步减小的曲线．其光量子效率是一个可变值，它的变化规律同入射光强及薄膜本身的性能有关 关键词：     

用于超短激光脉冲检测的新型光电发射薄膜

Ａｇ－Ｂａ－Ｏ薄膜是金属超微位子埋藏于半导体基质中的全新型光电转换薄膜。它不含碱金属，有很好的稳定性，可以在大气中存放，再置入真空系统中不需要激话，就能产生足以检测皮秒级激光脉冲信号的光电子发射。在激光作用下有特殊的灵敏度。这种光电转换薄膜有很好的应用前景。     

Au/Bi共掺二氧化硅薄膜的制备及近红外光谱调控

根据X射线光电子能谱分析和选择性光致发光谱测试结果,探讨了Bi离子掺杂非晶二氧化硅薄膜的近红外发光来源。我们认为非晶二氧化硅薄膜中Bi离子的近红外发光来源于低价态Bi~+离子从轨道~3P_1层到~3P_0层的辐射复合跃迁和Bi~0从轨道~2D_(3/2)层到~4S_(3/2)层的辐射复合跃迁。此外,本文利用限制性晶化原理,通过在掺Bi二氧化硅薄膜中引入Au离子,实现了Bi离子相关的近红外发光峰位可调,荧光强度增大了300%。高分辨透射电子显微镜截面图片证实了非晶二氧化硅薄膜厚度约为90 nm以及不同尺寸、数密度Au量子点的形成。变温光致发光谱测试结果表明,部分Au离子可有效降低Bi离子掺杂非晶二氧化硅薄膜中羟基集团等非辐射复合中心密度。Bi离子掺杂非晶二氧化硅薄膜近红外发光来源的探讨以及通过Au量子点调控Bi离子近红外发光性质的讨论将有助于未来掺Bi发光材料的相关研究。     

Luminescence mechanism of ZnO thin film investigated by XPS measurement

The effects of annealing environment on the luminescence characteristics of ZnO thin films that were deposited on SiO₂/Si substrates by reactive RF magnetron sputtering were investigated by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). An analysis of the O 1s peak of ZnO film revealed that the concentration of oxygen vacancies increased with the annealing temperature from 600 °C to 900 °C under an ambient atmosphere. The PL results demonstrated that the intensity of green light emission at 523 nm also increased with temperature. Under various annealing atmospheres, the analyses of PL indicated that only one emission peak (523 nm) was obtained, indicating that only one class of defect was responsible for the green luminescence. The green light emission was strongest and the concentration of oxygen vacancies was highest when the ZnO film was annealed in ambient atmosphere at 900 °C. The results in this investigation show that the luminescence mechanism of the emission of green light from a ZnO thin film is associated primarily with oxygen vacancies. PACS 81.15.Cd; 81.40.Ef; 78.55.-m; 78.55.Et     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.     

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film

BaTiO3(BTO) ferroelectric thin films are prepared by the sol-gel method.The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode(LED) with amorphous BTO ferroelectric thin film are studied.The photoluminescence(PL) of the BTO ferroelectric film is attributed to the structure.The ferroelectric film which annealed at 673 K for 8 h has the better PL property.The peak width is about 30 nm from 580 nm to 610 nm,towards the yellow region.The mixed electroluminescence(EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light.The Commission Internationale De L’Eclairage(CIE) coordinate of EL is(0.2139,0.1627).EL wavelength and intensity depends on the composition,microstructure and thickness of the ferroelectric thin film.The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm.This means the amorphous ferroelectric thin films can output more blue-ray and emission lights.In addition,the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures(200℃-400℃).It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED.This provides a new way to study LEDs.     

Photoluminescence Properties of Conjugated Phenylacetylene Monodendrons in Thin Films

We report the absorption, photoluminescence (PL), and time-dependent PL of thin films of conjugated phenylacetylene monodendrons at both room temperature and at cryogenic temperature. We find that the PL properties of the monodendron thin films are significantly different from their fluorescence in dilute solution due to the presence of interactions between monodendrons in the thin film. These interactions lead to aggregate species in the thin films, which result in broader PL spectra and lower PL quantum yields than for monodendrons in dilute solution. Evidence for excimer-like aggregates in the monodendron thin films is found from time-resolved PL spectra.