Absolute sign of the Mu* hyperfine parameters in diamond

Standard μSR experiments in diamond have shown that the relative sign of the hyperfine parameters of the anisotropic Mu^* state is negative (A _‖/A _⊥<0). We report an experimental determination of theabsolute sign of the Mu^* hyperfine parameters by studying the transferred muon polarization during the thermally-activated transition from the isotropic Mu state to Mu^*. The results demonstrate that the isotropic part of the Mu^* hyperfine interaction is negative. In a nitrogen-poor diamond, both the Mu disappearance rate and the enhancement of the Mu^* signals are well-described by a single Arrhenius law.     

Muon behaviour in diamond grown by chemical vapour deposition

Transverse‐field μSR spectroscopy was used to study the behaviour of positive muons implanted in polycrystalline chemical‐vapour‐deposited (CVD) diamond. Measurements were made at sample temperatures of 10 K, 100 K, and 300 K at a magnetic field of 7.5 mT to study the behaviour of the “normal” (isotropic) muonium state (Mu_T) and the diamagnetic states (μ^d), and at 10 K and 300 K at the so‐called “magic field” of 407.25 mT to study the anomalous (bond‐centred) muonium state (Mu_BC) and μ^d. The absolute fractions of the muonium states in the CVD diamond are observed to be close to those in high‐quality natural type‐IIa single crystal diamond. This revised version was published online in August 2006 with corrections to the Cover Date.     

Muonium centers in heavily n‐doped Si under illumination: Evidence for Mu–hole interaction

A small fraction of implanted muons exists as a paramagnetic state (presumably Mu_BC ⁰, muonium at the Si—Si bond center) in heavily Sb‐doped Si (n-type, [Sb]\ \simeq 10¹⁸\ cm^–3). The paramagnetic state is susceptible to illumination both at 10–20 K and 290 K, providing evidence that holes (minority carriers) play an important role in determining the dynamical properties of muonium centers, where change may occur via a process Mu_BC ⁰+ h⁺\to Mu_BC ⁺ followed by charge exchange reaction (or transition Mu⁺ _BC+ e⁻→ Mu⁰ _T). This revised version was published online in August 2006 with corrections to the Cover Date.     

First-principle study of electronic structure and optical properties of 3C-BC4N

The 3C-BC₄N, as a kind of superhard material with many potential practical applications, is studied using first-principle calculations, evaluating the structural parameters, charge transfers, bond populations, band structures, density of states, and optical properties. All the calculations are performed after geometric optimization starting from a six-atom, trigonal, and unit-cell structure. The results indicate the following: all the configurations are metastable; the band gap of five configurations of 3C-BC₄N is highly dependent on the atomic arrangement; BC₄N-1 exhibits insulating behavior; BC₄N-3 exhibits semiconductor or semimetallic behavior, while BC₄N-2, BC₄N-4, and BC₄N-5 exhibit metallic behavior; and all the configurations are transparent in the visible light region.     

Electron–muon dynamics in n‐type silicon

We report RF‐μSR results in lightly n‐doped Si samples. Measurement of the diamagnetic amplitude in both the \langle 100\rangle and \langle 111\rangle directions for a sample with N_D\leq5\times 10¹²\ cm^-3 clarifies the charge/spin electron‐exchange dynamics for bond‐centered muonium and yields a 3300 Å ² electron‐capture cross section at Mu⁺ _BC. An increase in the Mu⁰ _BC RF amplitude observed at 30K in a sample of N_D\simeq 2\times 10¹³\ cm^-3 provides direct evidence for enhanced low‐temperature creation of Mu_BC ⁰ at the expense of Mu_T ⁰0 with increased electron concentration.     

Muon/Muonium in an Isotopically Pure 13C Diamond

A preliminary study of the diamagnetic (μ_d) and the paramagnetic (Mu _T ) states in a synthetic ¹³C diamond has been performed using the Transverse Field Muon Spin Rotation method. This system could be used to verify the quantum diffusion behaviour observed before, however, with a more reliable extraction of the hopping rate. The results were obtained in an applied magnetic field of 7.5 mT and at sample temperatures of 10 K, 100 K and 200 K. The prompt fraction, f, of the μ_d state remains constant at 22(5)% in the range 10–200 K; that of the Mu _T state increases from 53(10)% at 10 K to 78(10)% at 200 K. The fractions of the two states add to 100% at 200 K, suggesting non-population of the bond-centred state, Mu_BC, which is often observed in other diamond samples. The μ_d state has a spin relaxation rate of 0.20(5) μs⁻¹, in contrast to the zero value obtained in type II diamond samples. This indicates appreciable interaction of the μ_d state with the ¹³C atoms. The Mu _T state has a large spin relaxation rate ranging from 3.0(5) μs⁻¹ at 10 K to 7.0(5) μs⁻¹ at 200 K, consistent with values obtained in diamond samples with defects. This work is part of ongoing studies of muon/muonium-defect interactions in diamonds. This revised version was published online in September 2006 with corrections to the Cover Date.     

Diamond-like C2H nanolayer, diamane: Simulation of the structure and properties

We consider a new C₂H nanostructure based on bilayer graphene transformed under the covalent bond of hydrogen atoms adsorbed on its external surface, as well as compounds of carbon atoms located opposite each other in neighboring layers. They constitute a “film” of the 〈111〉 diamond with a thickness of less than 1 nm, which is called diamane. The energy characteristics and electron spectra of diamane, graphene, and diamond are calculated using the density functional theory and are compared with each other. The effective Young’s moduli and destruction thresholds of diamane and graphene membranes are determined by the molecular dynamics method. It is shown that C₂H diamane is more stable than CH graphane, its dielectric “gap” is narrower than the band gap of bulk diamond (by 0.8 eV) and graphane (by 0.3 eV), and is harder and more brittle than the latter.     

First-principles study on the structural and electronic properties of LiB and its hydrides (Li2BnHn, n=5, 8, 12, LiBH4)

Structural, electronic and vibrating properties of LiB and its hydrides (Li₂B_nH_n, n=5, 8, 12, LiBH₄) were calculated by the first-principles using density functional theory in its generalized gradient approximation. The calculated results are in good agreement with experimental studies. The deviation between theory and experimental results are also discussed. With the increasing of H atoms in range of 5-12, the band gap energy increases and the width of the conduction band decreases. Comparing with LiB, the band gap of LiBH₄ is broadened, which indicates the enhancement of Li-B and Li-H bond strength. Valence electrons mainly transfer from Li atoms to B and H atoms. As a result, Li atoms are thought to be partially ionized as Li⁺ cations. There is little contribution of Li orbital to the occupied states, resulting in Li-H and Li-B bond exhibiting an ionic nature, and B-H bond showing a covalent nature.     

The transition from Mu to Mu* in diamond

Evidence is presented for a transition from the isotropic muonium state (Mu) to the [111] axially symmetric anomalous muonium state (Mu^*) in diamond. Amplitude measurements for Mu^* in a powder in zero field and with a single crystal oriented in a magnetic field indicate that such a transition occurs with a temperature-dependent rate(T) and that the electron polarization is conserved during the transition. The possibility of determining the absolute sign of the Mu^* hyperfine parameters is discussed.     

二维BC2 N薄片的结构稳定性和电子性质

采用基于密度泛函理论的第一性原理方法,对二维BC₂N薄片的结构稳定性和电子性质进行了系统的研究.计算了BC₂N化合物16种可能的二维单层结构.对它们的能带结构分析发现,对称性最高的构型与石墨烯一样是一种半金属,而其他二维结构则为有不同带隙的半导体,其中最稳定的构型是带隙值为1.63 eV的直接带隙半导体.对最稳定构型的差分电荷密度分析和Bader分析发现:在最稳定的构型中,C–C键、C–N键、C–B键和B–N键主要以共价键的形式呈现,也具有比较明显的离子性.在应力作用下最稳定构型的单层BC₂N的带隙宽度会发生变化,压缩时带隙变宽,而拉伸时带隙变窄,但仍然为直接带隙半导体. 关键词： 2N')" href="#">BC₂N 单层原子薄片 电子结构 从头计算     

Electronic structures of hydrogen in perovskite-type oxide,SrTiO3

The electronic structures of hydrogen in SrTiO₃ are simulated by the DV-Xα molecular orbital method. In pure SrTiO₃, there is a band gap of about 3.5 eV between the O-2p valence band and the Ti-3d conduction band, in agreement with experiments. When Sc is doped into SrTiO₃, an acceptor level appears just above the valence band. On the other hand, when hydrogen is introduced into SrTiO₃, a donor level appears below the conduction band. The molecular orbital of the donor level is composed mostly of the Ti-3d and O-2p electrons, but still there is a small occupancy (6%∼12%) of the H-1s electrons in it. When both Sc and hydrogen coexist in SrTiO₃, charge transfer takes place from the donor level to the acceptor level. As a result of this charge compensation, the effective ionicity of hydrogen becomes about +0.17∼+0.24, the value of which is dependent on the hydrogen positions in the crystal lattice. Also, the chemical bond strengths between constituent ions are modified largely by dopants. For example, the Sc doping tends to strengthen the chemical bond between hydrogen and oxygen ions, but instead to weaken the chemical bond between the oxygen ion and the surrounding metal ions. In addition, it is shown that an oxygen ion vacancy makes the defect level below the conduction band in the Sc-doped oxide.     

Muonium states in silicon carbide

Implanted muons in samples of silicon carbide have been observed to form paramagnetic muonium centers (μ ⁺ e⁻). Muonium precession signals in low applied magnetic fields have been observed at 22 K in a granular sample of cubic β-SiC, however it was not possible to determine the hyperfine frequency. In a single crystal sample of hexagonal 6H-SiC, three apparently isotropic muonium states were observed at 20 K and two at 300 K, all with hyperfine frequencies intermediate between those of the isotropic muonium centers in diamond and silicon. No evidence was seen of an anisotropic muonium state analogous to the Mu^* state in diamond and silicon.     

Muonium centers in the alkali halides

Muonium centers (Mu) in single crystals and powdered alkali halides have been studied using the high-timing-resolution transverse field μSR technique. Mu has been observed and its hyperfine parameter (HF) determined inevery alkali halide. For the rocksalt alkali halides, the HF parameter A_μ shows a systematic dependence on the host lattice constant. A comparison of the Mu HF parameter with hydrogen ESR data suggests that the Mu center is the muonic analogue of the interstitial hydrogenH _i ⁰ -center. The rate of Mu diffusion can be deduced from the motional narrowing of the nuclear hyperfine interaction. KBr shows two different Mu states, a low-temperatureMu ^I -state and a high-temperatureMu ^II -state.     

Shallow-Donor Hydrogen-Like Impurities in ZnO Studied by MuSR

Two species of Mu centers with extremely small hyperfine parameters have been observed in single crystalline ZnO below 40 K. Both Mu centers have an axial symmetric hyperfine structure along with the [0001] axis, indicating that they are located at AB_O,∥ and BC_∥ sites. It is inferred from their small ionization energy (≃6 meV and 50 meV) and hyperfine parameters (∼10⁻⁴ times the vacuum value) that these centers behave as shallow donors, strongly suggesting that hydrogen is one of the primary origins of n type conductivity in as-grown ZnO. This revised version was published online in September 2006 with corrections to the Cover Date.     

Electronic structure of collapsed C,BN, and BC3 nanotubes

The electrical properties of single-wall C, BN, and BC₃ nanotubes in ideally rolled-up forms show a wide spectrum from truly metals to large band gap semiconductors. In the presence of radial deformations that collapse tubes, the electrical properties are severely modified such that metals turn into semiconductors and vice versa. Based on first-principles pseudopotential calculations, we find that metallic C nanotubes have a finite band gap if radial deformations break all mirror symmetries of the tubes, and that original finite gaps (∼0.5 eV) of semiconducting C and BC₃ tubes are closed by collapsing deformations. In BN tubes, band gaps can be tuned in the range 2–5 eV. On the other hand, the band gaps of armchair BN and zigzag BC₃ nanotubes are found to be insensitive to radial deformations. These new findings can be applied to design new types of nanotube-based functional devices using radial deformations.     

Semi-empirical lcao band structure calculation on the transition of diamond into the metallic state under pressure

The band structure for tetragonally distorted diamond is calculated by the Extended Hückel Theory. The indirect band gap of diamond shrinks with increasing strain and vanishes at e_zz = -0.17. This result is in very good agreement with high pressure experiments on diamond of Vereshchagin et al. as well as with theoretical results for the pressure-temperature phase diagram for diamond by Van Vechten.     

Mechanical properties of superhard diamondlike BC5

Using first-principles calculations, we systematically studied the mechanical properties and electronic structure of the recently synthesized diamondlike BC₅. Our calculated bulk modulus B, shear modulus G, elastic constant c₄₄, and theoretical hardness H confirm that BC₅ is an ultraincompressible and superhard material. Also, it exhibits mechanical stability and metallic features. Electronic structures show that a strong covalent bond network through sp³ hybridization is the origin of the excellent mechanical properties of BC₅. Our results show that BC₅ has good prospects in electronic application as a superhard material.     

Optical properties of nanodiamond layers

Thin ultradisperse diamond (UDD) layers deposited from a water suspension are studied by optical and x-ray photoelectron spectroscopy (XPS). The effective band gap determined by the 10⁴-cm^?1 criterion for ozone-cleaned UDD is 3.5 eV. The broad structureless photoluminescence band (380–520 nm) is associated with radiative recombination through a system of continuously distributed energy levels in the band gap of diamond nanoclusters. The optical absorption of the material at 250–1000 nm originates from absorption on the disordered nanocluster surface containing threefold-coordinated carbon. The surface of UDD clusters subjected to acid cleaning contains nitrogen-oxygen complexes adsorbed in the form of NO ₃ ^? nitrate ions. Annealing in a hydrogen atmosphere results in desorption of the nitrate ions from the cluster surface. The evolution of the oxygen (O1s) and nitrogen (N1s) lines in the XPS spectra under annealing of a UDD layer is studied comprehensively.     

Muonium studies of p-type semi-conducting diamond under conditions of UV-visible illumination

This work reports on the promptly forming fraction and the spin relaxation rate of the isotropic muonium (Mu_T) component in p-type semi-conducting diamond, measured under the condition of illumination. The data are the first such investigations for diamond. A broad band illumination with wavelengths ranging from 0.5 μm to 3 μm was obtained from a Xenon lamp. The energy of the photons was sufficient to excite electrons from the valence band to the 0.28 ppm boron impurity band (0.37 eV). The Transverse Field Muon Spin Rotation (TF-μSR) measurements were conducted as a function of temperature, ranging from 5 K to 300 K. An illumination effect at temperatures below 100 K is observed. It is not yet clear from these data whether the effect is due to Mu_t scattering off delocalized holes, which are removed by illumination or whether there is prompt trapping of Mu_t at boron impurities (passivation) which is affected by illumination. This revised version was published online in August 2006 with corrections to the Cover Date.     

P-related defects in P-doped a-Si:H

The electronic states of a weak Si-P bond are calculated by applying a simple LCAO MO method to a small cluster of atoms. The energy level of the antibonding state of the weak Si-P bond appears above that of the Si dangling bond in the gap. The ESR hyperfine lines observed in P-doped a-Si:H can be attributed to an electron in this antibonding state. The change of the length of the Si-P bond according to its charged state is suggested to be a possible origin of the Staebler-Wronski effect.