Spin relaxation in the impurity band of a semiconductor in the external magnetic field

Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum and hyperfine interaction in the external magnetic field is considered. Two contributions to the spin relaxation are shown to be relevant: the one given by optimal impurity configurations with the hop-waiting time inversely proportional to the external magnetic field and another one related to electron motion over large distances. The average spin relaxation rate is calculated. The article is published in the original.     

A virtual intersubband spin–flip spin–orbit coupling induced spin relaxation in GaAs (110) quantum wells

A spin relaxation mechanism is proposed based on a second-order spin–flip intersubband spin–orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110) quantum wells with high impurity density. The dependencies of the spin relaxation time on electron density, temperature and well width are studied with the underlying physics analyzed.     

Efficient spin filtering in a disordered semiconductor superlattice in the presence of Dresselhaus spin-orbit coupling

The influence of the Dresselhaus spin-orbit coupling on spin polarization by tunneling through a disordered semiconductor superlattice was investigated. The Dresselhaus spin-orbit coupling causes the spin polarization of the electron due to transmission possibilities difference between spin up and spin down electrons. The electron tunneling through a zinc-blende semiconductor superlattice with InAs and GaAs layers and two variable distance In_xGa_(1−x)As impurity layers was studied. One hundred percent spin polarization was obtained by optimizing the distance between two impurity layers and impurity percent in disordered layers in the presence of Dresselhaus spin-orbit coupling. In addition, the electron transmission probability through the mentioned superlattice is too much near to one and an efficient spin filtering was recommended.     

Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells

The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al_(0.3)Ga_(0.7)As quantum weiis is studied using the time-resolved magneto-Kerr rotation measurements.The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density.Moreover,the relative strength of the Rashba and the Dresselhaus spin-orbit coupling fields,and thus the observed spin relaxation time anisotropy,is further tuned by the additional excitation of a 532 nm continuous wave laser,demonstrating an effective spin relaxation manipulation via an optical gating method.     

Gauge theory approach for diffusive and precessional spin dynamics in a two-dimensional electron gas

We develop a gauge theory for diffusive and precessional spin dynamics in a two-dimensional electron gas. Our approach reveals a direct connection between the absence of the equilibrium spin current and a strong anisotropy in the spin relaxation: both effects arise if spin-orbit coupling is reduced to a pure gauge SU(2) field. In this case, the spin-orbit coupling can be removed by a gauge transformation in the form of a local SU(2) spin rotation. The resulting spin dynamics is exactly described in terms of two kinetic coefficients: the spin diffusion and electron mobility. After the inverse transformation, full diffusive and precessional spin density dynamics, including the anisotropic spin relaxation, formation of stable spin structures, and spin precession induced by a macroscopic current are restored. Explicit solutions of the spin evolution equations are found for the initially uniform spin density and for stable, nonuniform structures. Our analysis demonstrates a universal relation between the spin relaxation rate and spin-diffusion coefficient.     

Electron spin relaxation by spin-rotation interaction in benzoyl and other acyl type radicals

In various studies of the spin dynamics in radical pairs, benzoyl-type radicals have been one of the two paramagnetic pair species. Their electron spin relaxation has been assumed to be slow enough to be neglected in the data analysis. This assumption is checked by measuring the electron spin relaxation in a sequence of three acyl radicals (benzoyl, 2,4,6-trimethylbenzoyl and hexahydrobenzoyl) by time-resolved electron paramagnetic resonance spectroscopy. In contrast to the assumed slow relaxation, rather short spin-lattice relaxation times (100–400 ns) are found for benzoyl and 2,4,6-trimethylbenzoyl radicals from the decay of the integral initial electron polarization to thermal equilibrium at different temperatures and viscosities. The relaxation is induced by a spin-rotation coupling arising from two different types of radical movements: overall rotation of the whole radical and hindered internal rotation of the CO group. The predominant second contribution depends on the barrier of the internal rotation. The obtained results are well explained in the frame of Bull’s theory when using a modified rotational correlation time τ _J . The size of the spin-rotation coupling due to the internal CO group rotation in benzoyl radicals is estimated to be |C _α|=1510 MHz.     

Spin relaxation in nanowires by hyperfine coupling

Hyperfine interactions establish limits on spin dynamics and relaxation rates in ensembles of semiconductor quantum dots. It is the confinement of electrons which determines nonzero hyperfine coupling and leads to the spin relaxation. As a result, in nanowires one would expect the vanishing of this effect due to extended electron states. However, even for relatively clean wires, disorder plays a crucial role and makes electron localization sufficient to cause spin relaxation on the time scale of the order of 10 ns. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spin-orbit coupling, spin relaxation, and spin diffusion in organic solids

We develop a systematic approach of quantifying spin-orbit coupling (SOC) and a rigorous theory of carrier spin relaxation caused by the SOC in disordered organic solids. The SOC mixes up and down spin in the polaron states and can be characterized by an admixture parameter γ2. This mixing effects spin flips as polarons hop from one molecule to another. The spin relaxation time is τ(sf) = R2/(16γ2 D), and the spin diffusion length is L(s) = R/4|γ|, where R is the mean polaron hopping distance and D the carrier diffusion constant. The SOC in tris-(8-hydroxyquinoline) aluminum (Alq3) is particularly strong due to the orthogonal arrangement of the three ligands. The theory quantitatively explains the temperature-dependent spin diffusion in Alq3 from recent muon measurements.     

Collective state of electrons and impurities with a spin

The problem of states of an electron system interacting with impurities that have a spin of 1/2 is considered. It is shown that in the calculation of the energy of the system, the electron spin-flip processes and the formation of electron–hole–impurity flip spin (hole against the background of electrons with another spin projection) play the major role. Such complexes are accumulated in the system (a sort of Bose condensate of complexes is formed); this reduces the energy of the system, which is a linear function of the initial interaction of an electron with the impurity spin (in contrast, for example, to the result obtained in perturbation theory). The hole-type excitation and the spin excitation have a gap in the spectrum. Small parameters of the problem are the interaction of electrons with impurity spins and the number of impurities. The electron–electron interaction is not taken into account. Impurities are assumed to be distributed at random, and calculations are performed using the known averaging over the positions of impurities.     

<Superscript>29</Superscript>Si nuclear spin relaxation in microcrystals of plastically deformed Si: B samples

Single crystals and microcrystals Si: B enriched with ²⁹Si isotopes have been studied using nuclear magnetic resonance and electron paramagnetic resonance (EPR) in the temperature range from 300 to 800 K. It has been found that an increase in the temperature from 300 to 500 K leads to a change in the kinetics of the relaxation of the saturated nuclear spin system. At 300 K, the relaxation kinetics corresponds to direct electron–nuclear interaction with inhomogeneously distributed paramagnetic centers introduced by the plastic deformation of the crystals. At 500 K, the spin relaxation occurs through the nuclear spin diffusion and electron–nuclear interaction with an acceptor impurity. It has been revealed that the plastic deformation affects the EPR spectra at 9 K.     

Kondo screening in gapless magnetic alloys

The low-energy physics of a spin- Kondo impurity in a gapless host, in which the density of band states ρ₀(ε)=|ε|^r/(|ε|^r+β^r) vanishes at the Fermi level ε=0, is studied by the Bethe ansatz. It is shown that the growth of the parameter Γ_r=βg^−1/r (where g is an exchange coupling constant) drives the ground state of the system from the Kondo regime with a screened impurity spin to the Anderson regime, where the impurity spin is unscreened. However, in a weak magnetic field H, the impurity spin exceeds its free value, , due to a strong coupling to a band.     

Theory of spin noise in nanowires

We develop a theory of spin noise in semiconductor nanowires considered as prospective elements for spintronics. In these structures, spin-orbit coupling can be realized as a random function of a coordinate correlated on a spatial scale of the order of 10?nm. By analyzing different regimes of electron transport and spin dynamics, we demonstrate that the spin relaxation can be very slow, and the resulting noise power spectrum increases algebraically as the frequency goes to zero. This effect makes spin phenomena in nanowires best suitable for studies by rapidly developing spin-noise spectroscopy.     

Measurement of the spin-depairing interaction in Sn0.75Eu0.25Mo6S8

Mössbauer effect measurements of the ¹⁵¹ Eu resonance in the Chevrel phase superconductor Sn_0.75Eu_0.25Mo₆S₈ have been used to obtain the temperature dependence of the Eu paramagnetic relaxation rate. This consists of a temperature independent part arising from spin-spin interactions and a part linear in T due to the Korringa process. From the slope we obtain $\text{I}$ = 0.0033/Eu atom-spin, where $\text{I}$ is the exchange coupling between the rare-earth spin and the conduction electron spin, and N(E_F) is the local density of states. This value is roughly one order of magnetude lower than that measured in binary superconductors, and accounts for the very weak dependence of the transition temperature on magnetic impurity concentration.     

Electron spin dynamics in a self-assembled semiconductor quantum dot: the limit of low magnetic fields

Using the trion as an optical probe, we uncover novel electron spin dynamics in CdSe/ZnSe Stranski-Krastanov quantum dots. The longitudinal spin lifetime obeys an inverse power law associated with recharging processes in the dot ensemble. No hint at spin-orbit mediated spin relaxation is found. At very weak magnetic fields (< 50 mT), electron spin dynamics related to the hyperfine interaction with the lattice nuclei is uncovered. A strong Knight field gives rise to nuclear ordering and formation of dynamical polarization on a 100-micros time scale under continuous electron spin pumping. The associated spin transients are temperature robust and can be observed up to 100 K.     

Electrical control of spin relaxation in a quantum dot

We demonstrate electrical control of the spin relaxation time T1 between Zeeman-split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the orbital states of the dot using gate voltages we vary the relaxation rate W identical withT1(-1) by over an order of magnitude. The dependence of W on orbital confinement agrees with theoretical predictions, and from these data we extract the spin-orbit length. We also measure the dependence of W on the magnetic field and demonstrate that spin-orbit mediated coupling to phonons is the dominant relaxation mechanism down to 1 T, where T1 exceeds 1 s.     

Polarization and readout of coupled single spins in diamond

We study the coupling of a single nitrogen-vacancy center in diamond to a nearby single nitrogen defect at room temperature. The magnetic dipolar coupling leads to a splitting in the electron spin resonance frequency of the nitrogen-vacancy center, allowing readout of the state of a single nitrogen electron spin. At magnetic fields where the spin splitting of the two centers is the same, we observe a strong polarization of the nitrogen electron spin. The amount of polarization can be controlled by the optical excitation power. We combine the polarization and the readout in time-resolved pump-probe measurements to determine the spin relaxation time of a single nitrogen electron spin. Finally, we discuss indications for hyperfine-induced polarization of the nitrogen nuclear spin.     

Effect of quantum entanglement on Aharonov-Bohm oscillations, spin-polarized transport and current magnification effect

We present a simple model of transmission across a metallic mesoscopic ring. In one of its arm an electron interacts with a single magnetic impurity via an exchange coupling. We show that entanglement between electron and spin impurity states leads to reduction of Aharonov-Bohm oscillations in the transmission coefficient. The spin-conductance is asymmetric in the flux reversal as opposed to the two-probe electrical conductance which is symmetric. In the same model, in contradiction to the naive expectation of a current magnification effect, we observe enhancement as well as suppression of this effect depending on the system parameters. The limitations of this model to the general notion of dephasing or decoherence in quantum systems are pointed out.     

Goldstone-mode relaxation in a quantized Hall ferromagnet

We report on a study of the spin relaxation of a strongly correlated two-dimensional electron gas in the nu=2kappa+1 quantum Hall regime. As the initial state we consider a coherent deviation of the spin system from the B direction and investigate a breakdown of this Goldstone-mode (GM) state due to the spin-orbit coupling and smooth disorder. The relaxation is considered in terms of annihilation processes in the system of spin waves. The problem is solved at an arbitrary value of the deviation. We predict that the GM relaxation occurs nonexponentially with time.     

Antiresonance induced spin-polarized current generation

According to the one-dimensional antiresonance effect (Wang X R, Wang Y and Sun Z Z 2003 Phys. Rev. B 65 193402), we propose a possible spin-polarized current generation device. Our proposed model consists of one chain and an impurity coupling to the chain. The energy level of the impurity can be occupied by an electron with a specific spin, and the electron with such a spin is blocked because of the antiresonance effect. Based on this phenomenon our model can generate the spin-polarized current flowing through the chain due to different polarization rates. On the other hand, the device can also be used to measure the generated spin accumulation. Our model is feasible with today's technology.     

Transport and accumulation of spin anisotropy

We show that spin anisotropy can be transferred to an isotropic system by transport of a spin-quadrupole moment. We derive the quadrupole moment current and continuity equation and study a spin-valve structure consisting of two ferromagnets coupled to a quantum dot probing an impurity spin. The quadrupole backaction on their coupled spin results in spin torques and anisotropic spin relaxation which do not follow from standard spin-current considerations. We demonstrate the detection of the impurity spin by charge transport and its manipulation by electric fields.