Dependence of electronic and optical properties of multilayer SiC and GeC on stacking sequence and external electric field

The electronic and optical properties of different stacked multilayer SiC and GeC are investigated with and without external electric field (EEF). The band gaps of multilayer SiC and GeC are found smaller than that of monolayer SiC and GeC due to the interlayer coupling effect. When EEF is applied, the direct band gaps (ΔK–M) of multilayer SiC and direct band gaps (ΔK–K) of multilayer GeC all turn to indirect band gaps (ΔK–G) as the band at the G point drops dramatically toward zero. The imaginary part ε₂(ω)s of multilayer SiC and GeC show that new absorption peaks between 2–5 eV appear when the polarized direction is perpendicular to the layer plane, and new absorption peaks in infrared region appear as the EEF is higher than a certain point when the polarized direction is parallel to the layer plane. Our calculations reveal that different stacking sequences and EEF can provide a wide tunable band structures and optical properties for multilayer SiC and GeC.     

Structural,electronic and optical properties of Ca3Bi2: First-principles investigation

In this work by applying first principles calculations structural, electronic and optical properties of Ca₃Bi₂ compound in hexagonal and cubic phases are studied within the framework of the density functional theory using the full potential linearized augmented plane wave (FP-LAPW) approach. According to our study band gap for Ca₃Bi₂ in hexagonal phase are 0.47, 0.96 and 1?eV within the PBE-GGA, EV-GGA and mBJ-GGA, respectively. The corresponding values for cubic phase are 1.24, 2.08 and 2.14?eV, respectively. The effects of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths and anti-symmetry gap are investigated. It is found that the hydrostatic pressure increases the band widths of all bands below the Fermi energy while it decreases the band gap and the anti-symmetry gap. In our calculations, the dielectric tensor is derived within the random phase approximation (RPA). The first absorption peak in imaginary part of dielectric function for both phases is located in the energy range 2.0–2.5?eV which are beneficial to practical applications in optoelectronic devices in the visible spectral range. For instance, hexagonal phase of Ca₃Bi₂ with a band gap around 1?eV can be applied for photovoltaic application and cubic phase with a band gap of 2?eV can be used for water splitting application. Moreover, we found the optical spectra of hexagonal phase are anisotropic along E||x and E||z.     

FeS2(pyrite)电子结构与光学性质的密度泛函计算

采用局域密度近似的自洽密度泛函理论计算了FeS2的电子结构与光学性质。费米能级附近区域的能带与态密度计算表明价带极大值在X（100）点和导带极小值在G（000）点，直接带隙和音接带隙分别为0.74eV、0.6eV。并用电子结构信息精确计算了介质极化矩阵元，从而给出了FeS2的介电函数虚部及相关光学参量，理论结果与实验符合甚佳。     

First-principle study of the structural,electronic,and optical properties of SiC nanowires

We preform first-principle calculations for the geometric, electronic structures and optical properties of SiC nanowires(NWs). The dielectric functions dominated by electronic interband transitions are investigated in terms of the calculated optical response functions. The calculated results reveal that the SiC NW is an indirect band-gap semiconductor material except at a minimum SiC NW(n = 12) diameter, showing that the NW(n = 12) is metallic. Charge density indicates that the Si–C bond of SiC NW has mixed ionic and covalent characteristics: the covalent character is stronger than the ionic character, and shows strong s–p hybrid orbit characteristics. Moreover, the band gap increases as the SiC NW diameter increases. This shows a significant quantum size and surface effect. The optical properties indicate that the obvious dielectric absorption peaks shift towards the high energy, and that there is a blue shift phenomenon in the ultraviolet region. These results show that SiC NW is a promising optoelectronic material for the potential applications in ultraviolet photoelectron devices.     

Ultraviolet to far infrared optical properties of the one-dimensional conductor K2Pt(CN)4Br0·3. 3H2O

An experimental study of the optical properties of single crystals of the quasi-one-dimensional conductor K₂Pt(CN)₄Br_0·3, 3H₂O in the spectral range from 45,000 to 10 cm^?1 is presented.For light polarized perpendicular to the highly conducting direction the material behaves as a transparent dielectric, as evidenced by reflection and transmission spectra. The reflection spectrum measured with polarization parallel to the chain direction (E∥Z) shows, in addition to the previously reported ‘metal-like’ optical reflectance and plasma edge in the visible, deviations from free carrier type reflectance in the i.r. This was expected because the conductivity is thermally activated at low temperatures. The optical constants for E∥Z polarization have been determined by Kramers-Kronig analysis of the reflection spectrum and, at a few discrete wavelengths, from measurements of polarized reflectance under oblique incidence. The results are qualitatively consistent with various models of the electronic structure but do not distinguish between them.     

Multiple-quantum vector field imaging by magnetic resonance

We introduce a method for non-invasively mapping fiber orientation in materials and biological tissues using intermolecular multiple-quantum coherences. The nuclear magnetic dipole field of water molecules is configured by a CRAZED sequence to encode spatial distributions of material heterogeneities. At any given point r in space, we obtain the spherical coordinates of fiber orientation (theta,phi) with respect to the external field by comparing three signals ||G(X)||, ||(Y)||, and ||G(Z)|| (modulus), acquired with linear gradients applied along the X, Y, and Z axes, respectively. For homogeneous isotropic materials, a subtraction ||G(Z)|| - ||G(X)|| - ||G(Y)|| gives zero. With anisotropic materials, we find an empirical relationship relating ||G(Z)|| - ||G(X)|| - ||G(Y)||/(||G(X)|| + ||G(Y)|| + ||G(Z)||) to the polar angle theta, while ||G(X|| - ||G(Y)||/(||G(X)|| + ||G(Y)|| + ||G(Z)||) is related to the azimuthal angle phi. Experiments in structured media confirm the structural sensitivity. This technique can probe length scales not accessible by conventional MRI and diffusion tensor imaging.     

应变对两层半氢化氮化镓薄膜电磁学性质的调控机理研究

采用基于密度泛函理论的第一性原理模拟计算,研究了在应变作用下两层半氢化氮化镓纳米薄膜的电学和磁学性质.没有表面修饰的两层氮化镓纳米薄膜的原子结构为类石墨结构,并具有间接能隙.然而,当两层氮化镓纳米薄膜的一侧表面镓原子被氢化时,该纳米薄膜却依然保持纤锌矿结构,并且展示出铁磁性半导体特性.在应变作用下,两层半氢化氮化镓纳米薄膜的能隙可进行有效调控,并且它将会由半导体性质可转变为半金属性质或金属性质.这主要是由于应变对表面氮原子的键间交互影响和p-p轨道直接交互影响之间协调作用的结果.该研究成果为实现低维半导体纳米材料的多样化提供了有效的调控手段,为其应用于新型电子纳米器件和自旋电子器件提供重要的理论指导.     

Magnetic properties of the semifluorinated and semihydrogenated 2D sheets of group-IV and III-V binary compounds

By performing first-principles calculations, the intriguing electronic and magnetic properties of the semidecorated sheets of group-IV and III-V binary compounds are investigated. Our results indicate that the semifluorinated and semihydrogenated ab (ab = SiC, GeC, SnC, BN, AlN, and GaN) sheets exhibit diverse electronic and magnetic properties. Accordingly, the electronic and magnetic properties of the semidecorated sheets can be precisely modulated by controlling the adsorbed atoms on the a sites. Further, the preference of ferromagnetic or antiferromagnetic coupling can be attributed to the combined effects of both through-bond spin polarization and p-p direct interaction for the semidecorated ab sheets.     

Electronic and optical properties of van der Waals vertical heterostructures based on two-dimensional transition metal dichalcogenides: First-principles calculations

Four vertical heterostructures based on two-dimensional transition-metal dichalcogenides (TMDs) – MoS₂/GeC, MoSe₂/GeC, WS₂/GeC, and WSe₂/GeC, were studied by density functional theory calculations to investigate their structure, electronic characteristics, principle of photogenerated electron–hole separation, and optical-absorption capability. The optimized heterostructures were formed by van der Waals (vdW) forces and without covalent bonding. Their most stable geometric configurations and band structures display type-II band alignment, which allows them to spontaneously separate photogenerated electrons and holes. The charge difference and built-in electric field across the interface of these vdW heterostructures also contribute to preventing the photogenerated electron–hole recombination. Finally, the high optical absorption of the four TMD-based vdW heterostructures in the visible and near-infrared regions indicates their suitability for photocatalytic, photovoltaic, and optical devices.     

First-principles study on the electronic transport properties of M/SiC Schottky junctions (M=Ag,Au and Pd)

In this work, we investigate the electronic transport properties of M/SiC Schottky junctions (M=Ag, Au and Pd). The results show that the band structures of hydrogenated zigzag SiC nanoribbons (ZSiCNRs) and hydrogenated armchair SiC nanoribbons (ASiCNRs) are almost unaffected by their width changes. When the hydrogenated 7-ASiCNR is directly connected to the Ag, Au and Pd electrode, the transmission spectra of three metal-semiconductor junctions show that the Fermi level of metal is pinned to a fixed position in the semiconductor band gap of hydrogenated 7-ASiCNR. The nearly same rectifying current-voltage characteristics are found in three metal-semiconductor junctions. The average rectification ratios of three M/SiC Schottky junctions are all in the neighborhood of 10⁶. In other word, the M/SiC Schottky junction has remarkable application prospect as the candidate for Schottky Diode.     

Comparative study of structural,electronic, optical and thermoelectric properties of GaS bulk and monolayer

The structural, electronic, optical properties of GaS in bulk and monolayer forms have been studied by means of full-potential linearised augmented plane wave calculations within framework of the density functional theory. Generalised gradient approximation and Tran–Blaha modified Becke–Johnson exchange potential (mBJ) were employed for the treatment of exchange-correlation effect in calculations. Our calculated lattice parameters are in good agreement with previous theoretical results and available experimental data. The negative formation enthalpy and cohesive energy indicate that both bulk and monolayer GaS can be synthesised and stabilised experimentally. Our electronic results show that the band gap of GaS monolayer is higher than that of bulk counterpart and strong hybridisation between electronic states of constituent atoms is observed in both cases. The optical properties such as reflectivity, absorption coefficient, refractive index and optical conductivity were derived from calculated complex dielectric function for wide energy range up to 35?eV. Finally, the thermoelectric properties of GaS bulk and monolayer also were calculated using semi-classical Boltzmann theory within the constant relaxation time approximation for investigating their applicability in thermoelectric devices.     

First-principles study of monolayer and bilayer honeycomb structures of group-IV elements and their binary compounds

By using first-principles pseudopotential method, we investigate the structural, vibrational, and electronic properties of monolayer and bilayer honeycomb structures of group-IV elements and their binary compounds. It is found that the honeycomb structures of Si, Ge, and SiGe are buckled for stabilization, while those of binary compounds SiC and GeC containing the first row elements C are planar similar to a graphene sheet. The phonon dispersion relations and electronic band structures are very sensitive to the number of layers, the stacking order, and whether the layers are planar or buckled.     

Far-infrared optical excitations in multiferroic TbMnO<Subscript>3</Subscript>

We provide a detailed study of the reflectivity of multiferroic TbMnO₃ for wave numbers from 40 cm^-1 to 1000 cm^-1 and temperatures 5 K < T < 300 K. Excitations are studied for polarization directions E || a, the polarization where electromagnons are observed, and for E || c, the direction of the spontaneous polarization in this material. The temperature dependencies of eigenfrequencies, damping constants and polar strengths of all modes are studied and analyzed. For E || a and below the spiral ordering temperature of about 27 K we observe a transfer of optical weight from phonon excitations to electromagnons, which mainly involves low-frequency phonons. For E || c an unusual increase of the total polar strength and hence of the dielectric constant is observed indicating significant transfer of dynamic charge probably within manganese-oxygen bonds on decreasing temperatures.     

First-principles study of structural,electronic and optical properties of orthorhombic SrZrO3

We have investigated the structural parameters, electronic structure and optical properties of orthorhombic SrZrO₃ using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT). Our calculated structural parameters are in good agreement with the previous theoretical and experimental data. Band structure, density of states and chemical bonding have been systematically studied. Furthermore, the complex dielectric function, refractive index, extinction coefficient, optical reflectivity, absorption coefficient, loss function and optical conductivity are calculated, which show an optical anisotropy in the components of polarization directions (100), (010) and (001).     

Structural, electronic and optical properties of SrCl2 under hydrostatic stress

The results of first-principles theoretical study of the structural, electronic and optical properties of SrCl₂ in its cubic structure, have been performed using the full-potential linear augmented plane-wave method plus local orbitals (FP-APW+lo) as implemented in the WIEN2k code. In this approach both the local density approximation (LDA) and the generalized gradient approximation (GGA) are used for the exchange-correlation (XC) potential. Also we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for band structure calculations. We performed these calculations with and without spin-orbit interactions. Including spin-orbit coupling cause to lifts the triple degeneracy at Γ point and a double degeneracy at X point. Results are given for structural properties. The pressure dependence of elastic constants and band gaps are investigated. The dielectric function, reflectivity spectra and refractive index are calculated up to 30 eV. Also we calculated the pressure and volume dependence of the static optical dielectric constant.     

Common electronic band gaps and similar optical properties of ZnO nanotubes

Electronic and optical properties of single-walled zinc oxide （ZnO） nanotubes are investigated from the firstprinciples calculations. Electronic structure calculations show that ZnO nanotubes are all direct band gap semiconducting nanotubes and the band gaps are relatively insensitive to the diameter and chirality of tubes. The origin of the common electronic band gaps of ZnO nanotubes is explained in terms of band-folding from the two-dimensional band structure of graphite-like sheet. Moreover, the optical properties such as dielectric function and energy loss function spectra of different ZnO nanotubes are very similar, relatively independent of diameter and chirality of tubes. The calculated dielectric function and loss function spectra show a moderate optical anisotropy with respect to light polarization.     

Structural,electronic, optical and thermodynamic investigations of NaXF3 (X = Ca and Sr): First-principles calculations

The structural, electronic and optical properties for fluoro-perovskite NaXF₃ (X?=?Ca and Sr) compounds have calculated by WIEN2k code based on full potential linearized augmented plane wave (FP-LAPW) approach within density functional theory (DFT). To perform the total energy calculations, exchange-correlation energy/potential functional has been utilized into generalized gradient approximation (GGA) and local density approximation (LDA). Our evaluated results like equilibrium lattice constants, bulk moduli, and their pressure derivatives are in agreement with the available data. The electronic band structure calculation has revealed an indirect band-gap nature of NaCaF₃, while NaSrF₃ has direct band gap. Total and partial densities of states confirm the degree of localized electrons in different bands. The optical transitions in NaCaF₃ and NaSrF₃ compounds were identified by assigning corresponding peaks obtained from the dispersion relation for the imaginary part of the dielectric function. The thermodynamic properties were calculated using quasi-harmonic Debye model to account lattice vibrations. In addition, the influence of temperature and pressure effects was analyzed on bulk modulus, lattice constant, heat capacities and Debye temperature.     

第一性原理研究Be-S共掺杂AlN纳米片的电子结构和光学性质

基于密度泛函理论体系下广义梯度近似(GGA),利用第一性原理方法计算了Be替代Al、S替代N和Be-S共掺杂对氮化铝纳米片的电子结构和光学性质的影响.计算结果表明,掺杂改变了氮化铝纳米片的带隙,但仍显示半导体特性. Be掺杂类型对氮化铝纳米片的晶体结构影响不大,而S掺杂和Be-S共掺杂都使得氮化铝纳米片有不同程度的弯曲.同时Be-S共掺杂中S原子起到激活受主杂质Be原子的作用,使得受主能级向低能方向移动.共掺杂比单掺杂具有更高的受主原子浓度,并减小局域化程度.光学性质也发生较大改变:S原子掺杂氮化铝纳米片的介电函数虚部出现第二介电峰,Be掺杂和Be-S共掺杂使得损失谱的能量区间有所展宽,峰值降低并向高能区移动.     

Theoretical investigations on the structural, lattice dynamical and thermodynamic properties of XC (X=Si, Ge, Sn)

First-principles calculations, which is based on the plane-wave pseudopotential approach to the density functional perturbation theory within the local density approximation, have been performed to investigate the structural, lattice dynamical, and thermodynamic properties of SiC, GeC, and SnC. The results of ground state parameters, phase transition pressure and phonon dispersion are compared and agree well with the experimental and theoretical data in the previous literature. The obtained phonon frequencies at the zone-center are analyzed. We also used the phonon density of states and quasiharmonic approximation to calculate and predict some thermodynamic properties such as entropy, heat capacity, internal energy, and phonon free energy of SiC, GeC, and SnC in B3 phase.     

斜钨矿结构钨酸铅晶体电子结构和光学的偏振性质研究

利用完全势缀加平面波局域密度泛函近似,计算了完整的白钨矿结构和斜钨矿结构的钨酸铅（PbWO4）晶体的电子结构;模拟计算了复数折射率、介电函数及吸收光谱的偏振特性。分析了各个吸收光谱的峰值所对应的可能的电子跃迁以及钨酸铅晶体的偏振特性。钨酸铅晶体的光学性质的各向异性反映了钨酸铅晶体的品格结构的各向异性。计算结果表明：斜钨矿结构的钨酸铅晶体的光学性质与白钨矿结构的钨酸铅的光学性质之间存在明显的差异。这说明钨酸铅晶体是一种结构敏感的晶体;计算结果为研究钨酸铅晶体的光学性质与晶体结构之间的关系提供理论基础。