InAs/GaAs量子点1.3 μm单光子发射特性

采用双层耦合量子点的分子束外延生长技术生长了InAs/GaAs量子点样品,把量子点的发光波长成功地拓展到1.3 μm.采用光刻的工艺制备了直径为3 μm的柱状微腔,提高了量子点荧光的提取效率.在低温5 K下,测量得到量子点激子的荧光寿命约为1 ns;单量子点荧光二阶关联函数为0.015,显示单量子点荧光具有非常好的单光子特性;利用迈克耳孙干涉装置测量得到单光子的相干时间为22 ps,对应的谱线半高全宽度为30 μeV,且荧光谱线的线型为非均匀展宽的高斯线型.     

Luminescence decay of broadband emission from CdS quantum dots

The stretched exponential photoluminescence decay of the energy-resolved broadband emission of purified and unpurified CdS quantum dots (QDs) made in reverse micelles is characterized as a function of photolysis time and thiol addition. Photolysis is found to proportionately increase both the lifetime and quantum yield of these QDs. This proportionality is consistent with a simple parallel channel model of the decay of the excited states. The ultimate QY of the purified sample is found to be as high as 24%, which is twice that previously reported for this preparation. At −70 °C both the QY and the lifetime increase by more than a factor of two, indicating that thermal quenching limits the QY at room temperature. Finally, the addition of alkanethiols is shown to red-shift and quench the emission while only modestly altering the lifetime. These thiolated QDs show an extremely large temperature dependence of QY, demonstrating stronger thermal quenching than the unfunctionalized QDs.     

Advances in photonic crystals with MEMS and with semiconductor quantum dots

We discuss photonic crystals (PCs) with a microelectromechanical system (MEMS) and semiconductor quantum dots (QDs) as novel classes of PC devices. Integration of MEMS structures into PC devices enables one to realize several kinds of functional devices, such as modulators, switches, and tunable filters for highly integrated photonic circuits. We describe the basic concept of MEMS-integrated PC devices and show numerical and experimental demonstrations of MEMS-integrated functional PC devices. On the other hand, QDs are promising candidates for active media in PC devices. Spontaneous emission control of QD emission in PC nanocavities is especially important for novel optoelectronic devices and quantum information devices. In PC nanocavities, the interaction between QD excitons and photons is enhanced dramatically. The control of spontaneous emission spectrum and the enhancement of the luminescence intensity of InAs QDs by PC nanocavities are demonstrated at telecommunication wavelengths. The Purcell effect for ensemble and single QDs in PC nanocavities are also discussed.     

Fluorescence resonance energy transfer in a non-conjugated system of CdSe quantum dots/zinc-phthalocyanine

Energy transfer between CdSe quantum dots (QDs) as donors and Zn phthalocyanine (Zn-Pc) molecules as acceptors was studied using steady-state photoluminescence and time-correlated single photon counting techniques. With the latter technique it is evaluated that the lifetime of Zn-Pc emission increases from 4 ns to ca. 30 ns on 460 nm excitation in the presence of the QDs. The concomitant decrease in the lifetime of the QDs emission (from 23.5 to 18.4 ns) indicates that the excitation of Zn-Pc occurs not only through reabsorption but also through fluorescence resonance energy transfer.     

Polarization Properties of Quantum-Dot-Based Single Photon Sources

Polarization properties of single photons emitted by optical pumping from a single quantum dot （ QD） are studied by using a four-level system model. The model is capable of explaining the polarization uncertainty observed in single photon emission experiments. It is found that the dependence of photon emission efficiency and polarization visibility on pump power are opposite in general cases. By employing QDs with small size and strong carrier confinement, the photon polarization visibility under high pump power can be improved. In addition, embedding a QD into a well designed microcavity is also found to be favourable, whereas the trade-off between high polarization visibility and multi-photon emission is noted.     

The Influence of Surface Trapping and Dark States on the Fluorescence Emission Efficiency and Lifetime of CdSe and CdSe/ZnS Quantum Dots

To investigate the influence of surface trapping and dark states on CdSe and CdSe/ZnS quantum dots (QDs), we studied the absorption, fluorescence intensity and lifetime by using one-and two-photon excitation, respectively. Experimental results show that both one- and two-photon fluorescence emission efficiencies of the QDs enhance greatly and the lifetime increase after capping CdSe with ZnS due to the effective surface passivation. The lifetime of one-photon fluorescence of CdSe and CdSe/ZnS QDs increase with increasing emission wavelength in a supralinear way, which is attributed to the energy transfer of dark excitons. On the contrary, the lifetime of two-photon fluorescence of bare and core-shell QDs decrease with increasing emission wavelength, and this indicates that the surface trapping is the dominant decay mechanism in this case.     

Single photon sources with single semiconductor quantum dots

In t.his contribution, we briefly recall the basic concepts of quantum optics and properties of semicon- ductor quantum clot. （QD） which a.re necessary to the nnderstanding of the physics of single-photon generation with single QDs. Firstly, we address the theory of quantmn emitter-cavity system, the fluorescence and optical properties of semiconductor QDs, and the photon statistics as well as opti- cal properties of the QDs. We then review the localizatioll of single semiconductor QDs in quantum confined optical microcavity systems to achieve their overall optical properties and perfornances in terms of strong coupling regime, elfieiency, directionality, and polarization control. Furthermore, we will discuss the recenl, progress on the fabrication of single photon sources, and various a.pproaehes for embedding single QDs into mieroca,vities or photonic crystal nanoeavities and show how to ex- tend the wavelength range. We focus in part;icular on new generations of electrically driven QD single photon source leading to high repetition rates, efficiencies at elevated temperature operation. Besides strong eoupling regime, and high collection new development;s of room temperature sin- gle photon emission in the strong coupling regime are reviewed. The generation of indistinguishable photons and remaining challenges for pract ical single-photon sources are also discussed.     

利用N型半导体纳米材料抑制单量子点的荧光闪烁特性

利用N型半导体纳米材料氧化铟锡(ITO)作为单CdSe/ZnS量子点的基质来抑制单量子点的荧光闪烁特性. 实验采用激光扫描共聚焦显微成像系统测量了单量子点荧光的亮、暗态持续时间的概率密度分布的指数截止的幂律特性, 并与直接吸附在SiO₂玻片上的单CdSe/ZnS量子点的荧光特性进行比较. 研究发现处于ITO中的单量子点比SiO₂玻片上的单量子点荧光亮态持续时间提高两个数量级, 掺杂于ITO中的单量子点的荧光寿命约减小为SiO₂玻片上的单量子点的荧光寿命的41%, 并且寿命分布宽度变小50%.     

Assessing Carrier Recombination Processes in Type‐II SiGe/Si(001) Quantum Dots

In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type‐II self‐assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with very homogeneous size distribution, onion‐shaped composition profile, and Si capping layer thicknesses varying from 0 to 1100 nm are utilized to assess the optical carrier‐recombination paths. By using high‐energy photons for PL excitation, electron‐hole pairs can be selectively generated either above or below the QD layer and, thus, clearly access two radiative carrier recombination channels. Fitting the charge carrier capture‐, loss‐ and recombination‐dynamics to PL time‐decay curves measured for different experimental configurations allows to obtain quantitative information of carrier capture‐, excitonic‐emission‐, and Auger‐recombination rates in this type‐II nano‐system.     

水热法快速制备荧光氧化石墨烯量子点及其在细胞成像中的应用

作为一种新型荧光纳米材料,氧化石墨烯量子点(GO QDs)凭借其良好的水溶性和生物相容性得到广泛的关注。以氧化石墨烯为原料,过氧化氢为氧化剂,一步水热法在90 min内快速制备氧化石墨烯量子点,实现了快速、高效及绿色制备氧化石墨烯量子点。所制备得到的氧化石墨烯量子点分布均匀,透射电镜(TEM)图片表明氧化石墨烯量子点粒径分布在2.25～5.25 nm,傅里叶红外光谱(FTIR)和X射线电子能谱(XPS)显示氧化石墨烯量子点表面含有大量的羟基、羧基、羰基等含氧功能团,表明氧化石墨烯量子点具有很好的水溶性。荧光发射光谱(PL)表明氧化石墨烯量子点具有激发波长依赖性。基于其独特的纳米结构,良好的光学性能和生物相容性,氧化石墨烯量子点可替代传统荧光纳米材料应用于细胞成像。