Natural electron oscillations in granular indium films deposited on rough surfaces of NaCl and KCl single crystals

Two plasma resonance bands were simultaneously observed in granular indium films deposited on rough surfaces of NaCl and KCl single crystals; one of them is caused by a combined action of the light-wave field and of the field created by the dipole grains, and the other, by the light-wave field alone with the frequency of natural electron oscillations ω₀ in the grains. The indium plasma frequency, calculated from the measured frequencies ω₀ and known dielectric constants of NaCl and KCl, agrees well with the known plasma frequency of bulk indium. An anisotropy in the plasma resonance band of granular indium films deposited on a rough NaCl surface was found and interpreted.     

Natural electron oscillations in granular aluminum films deposited on rough surfaces of NaCl and KCl single crystals

Granular aluminum films deposited on rough surfaces of NaCl and KCl single crystals form a two-layer coating. In the lower layer, a low-frequency band of plasma resonance is excited due to the joint action of a light-wave field and a field induced by granules-dipoles. In a small amount of granules of the upper layer isolated from each other, a high-frequency band with a frequency ω₀ of natural electron oscillations in the granules is excited. Using the measured frequencies ω₀ and the known dielectric constants of NaCl and KCl, a plasma frequency of aluminum is calculated that agrees well with the known plasma frequency of solid samples. Kharkov State University, 4 Svoboda Sq., Kharkov, 310077, Ukraine. Translated from Zhurnal Prikladnoid Spektroskopii, Vol. 66, No. 6, pp. 853–856, November–December, 1999.     

Plasma resonance in granular gallium films deposited on rough NACl and KCl single-crystal surfaces

Granular gallium films deposited in high vacuum on the rough surfaces of NaCl and KCl single crystals maintained at 400°C consist of two layers, in which two resonance bands are excited simultaneously. In isolated grains of the upper layer, a band at the normal electron oscillation frequency ω₀ is excited. As a result of supercooling, the grains are in the liquid state. The gallium plasma frequency calculated from the measured ω₀ and dielectric constants of NaCl and KCl coincides with that obtained by other authors by metallooptic methods. In gallium deposited on room-temperature substrates, only one resonance band is excited, with the interband absorption band superposed on its low-frequency edge.     

低温氮化硅薄膜的介电性能研究

研究了微波电子回旋共振等离子体化学汽相沉积低温氮化硅薄膜在5—10⁶Hz频率范围内的介电性能．由于低温氮化硅薄膜为具有分形结构的纳米非晶薄膜，致使氮化硅薄膜的介电谱、损耗谱在低频区和高频区具有两种不同的分布规律．在低频区介电谱具有ε′∝ω^n－1₁的关系，ｎ₁在0.82—0.88之间，是电子跳跃导电的结果；在高频区介电谱具有ε′∝ω^n-1₂的关系，n₂在0 关键词：     

Estimation of the influence of ionic dielectricity on the dynamic superconducting order parameter

We consider the influence of an ω-dependent ionic dielectric constant ?(ω) on the properties of a superconductor. Assuming that the pairing interaction is proportional to ?² we have solved the Eliashberg equations for this case, both for imaginary and real frequencies. The interaction potential depends on a coupling constant λ and on a longitudinal phonon frequency Ω. The dielectric constant is assumed to be independent of wavevector q, and to depend on frequency through the expression: ?(ω) = (ω² - ω²_long)/(ω² - ω²_trans), where ω_long, ω_trans are the frequencies of optical phonons of the dielectric. We find that along the imaginary frequency axis (but not for real frequencies) the weighted phonon propagator can be modeled by an appropriate choice of a cutoff frequency and an effective coupling constant. The influence of ?(ω) on T_c, the gap δ(ω), and the renormalization function Z(ω) are studied and it is found that these quantities increase significantly with the dielectric constant.     

在高频区存在巨带隙的长方晶格二维光子晶体

本文利用降低光子晶体的对称性来提高绝对禁带宽度, 提出两种长方结构长方介质柱二维光子晶体, 用快速平面波展开法研究其高频区的带结构.经参数优化发现, 长方晶格包含一套介质柱时, 最大绝对禁带宽度Δω为0.1265ωe（ωe=2πc/a, a为晶格常数, c为光速）, 绝对禁带中心频率ωmid为1.9256ωe, Δω/ωmid=6.6%; 当长方晶格包含两套介质柱时, 最大绝对禁带宽度为0.203ωe, 绝对禁带中心频率为1.8597ωe, Δω/ωmid=10.9%.     

Dielectric response enhancement in the current carrying CDW state

The dc electric field dependence of the low frequency dielectric constant was investigated in the linear chain compound orthorhombic TaS₃. While the dielectric constant is barely effected by an applied dc field below the threshold field of the nonlinear conduction, in the current carrying state a large enhancement is observed. Inductive response at the narrow band noise frequency was also detected.     

INFLUENCES OF NONLINEAR INTERACTIONS ON POLARITONS

In this paper, we have analysed theoretically the polarization and dielectric constant generated by the nonlinear interactions between ions in ionic crystals. The spectrum of polaritons (coupling modes of photons and optical phonons) under nonlinear interactions has been developed. A new branch of dispersion relations has emerged in the original frequency gap between ω_TO and ω_LO.     

Adiabatic electron transfer in polar media

The rate of electron transfer in polar media is calculated in the framework of the transition state theory. It is shown that this theory is valid if k _B T > (hω₀/2π), where ω₀ is the frequency of a particle motion at the barrier top. The pre-exponential factor of the rate constant is found to be dependent on the reaction heat, dielectric loss spectrum, ?(ω), and the nondiagonal matrix element, Г. The rate constant of charge transfer in water, with allowance for the resonance absorbtion region, is determined. The influence of the motion of the water complexes on the rate constant is considered and it is shown that the pre-exponential factor depends not only on the frequency of the complex vibrations, but also on its reorganization energy. The maximum value of the complex reorganization energy is calculated under the conditions where the theory is valid. In the particular case of the Debye dielectric loss spectrum the multidimensional activated complex theory is shown to be equivalent to the stochastic Alexandrov-Zusman's model and the Kramers' theory (the case of large viscosity). It is pointed out that the transition state theory allows the inertial degrees of freedom to be taken into account for a real dielectric loss spectrum, ?(ω).     

Parametrische Anregung von elektrostatischen Oberflächenwellen in einer inhomogenen Plasmaschicht durch ein amplituden-moduliertes UHF-Pumpfeld

Parametric resonance phenomena are investigated in a plasma layer with thickness d and thin inhomogeneous boundary regions. The modulated UHF electric field is parallel to the plasma layer. We consider both strong and low modulation of the field amplitude and suppose, that the carrier frequency ω₀ of the pump wave is much larger than the Langmuir frequency ω_Le. We find the region for the modulation frequency ω, in which the parametric growing of the asymmetric and symmetric surface waves occurs. The maximum growth rates of these waves, the direction of their propagation and the threshold value of the modulation depth α of the UHF pump field are calculation.     

The size effect of Ba0.6Sr0.4TiO3 thin films on the ferroelectric properties

Barium strontium titanate (BST) thin films were prepared by RF magnetron sputtering. The dielectric constant-voltage curves and the hysteresis loops of BST thin films with different grain sizes and film thicknesses were investigated. When the grain size increases from 12 nm to 35 nm, remarkable increases in dielectric constant and tunability were observed. Above 12 nm, the BST films exhibited size effects, i.e. a decrease in maximal polarization (P_m) and an increase in coercive electric field (E_c) with reduction in grain size. In our investigation, the dielectric constant, tunability and maximal polarization increased as the film thickness increased. Furthermore, the size dependence of the dielectric constant and tunability of Ba_0.6Sr_0.4TiO₃ thin films is determined by that of the maximal polarization and the coercive electric field.     

The Effect of Uniaxial Pressures on the Infrared Spectra of LiNH<Subscript>4</Subscript>SO<Subscript>4</Subscript> Crystals

The infrared reflection spectra of mechanically free and uniaxially compressed LiNH₄SO₄ crystals are studied for the first time in the spectral range of 800–1700 сm^–1 along three crystallophysical directions. The Kramers–Kronig dispersion relations are used to determine the dispersion and baric dependences of refractive index n and the real ε₁ and imaginary ε₂ parts of the dielectric constant and to calculate the frequencies of longitudinal ω_LO and transverse ω_ТO vibrations, decay constant γ, and oscillator strength f of mechanically free and compressed LiNH₄SO₄ crystals. The considerable changes observed in the main reflection bands are explained by the effect of uniaxial pressures on the NH₄ and SO₄ tetrahedra.     

掺杂半导体/金属膜系的光谱透射反射特性

提出了以改变半导体薄膜的掺杂浓度来调节它的等离子体频率ω_p,使它的高透射区移至可见光带.选择本征吸收频率在近紫外区的金属与之构成最佳的D/M光谱透射-反射膜系,同时结合掺杂半导体膜与金属膜的最佳厚度组合以形成较理想的透明隔热复合膜. 关键词：     

Parametric Excitation of Plasma instabilities by two Monochromatic Pump waves

The dispersion characteristics of a plasma in a pump field ??(t) = ?? sub ω₀t + ??₁ sin ω₁t are considered. Firstly we assume, that the second wave is weak (|??₁| ? |??₀|) and the frequency ω₁ is near sω₀(ω₁ = sω₀ + Ω,Ω ? ω₀). We obtain the dispersion equation, describing the parametric coupling of the waves driven by the strong field ??₀ sin ω₀t under the resonance condition ω₀ ≈ ω_Le/P and derive the expressions for the growth rates (ω_Le is the electron LANGMUIR frequency; s, p are integers). In the second part it is shown, that a strong field ??₁ with a frequency ω₁ much larger than ω _Le(ω _Le ≈ pω₀) stabilizes the plasma; the growth rates are reduced and the frequency region of the parametric instability is contracted.     

Study of relaxor-like behaviour of laser ablated (Pb, La)Tio3 thin films

Lanthanum modified lead titanate (PLT) thin films are one of the potential candidates for the pyroelectric and memory applications due to their excellent dielectric, pyroelectric and ferroelectric properties. PLT thin films with 25 at.% of La were deposited on platinum coated Si substrates by the laser ablation technique. The phase transition studies were done in the temperature range of −40 to 150 °C as a function of frequency and ac field. A diffused phase transition with the shifting of the maximum dielectric permittivity (?_max) to higher temperatures with the increase of frequency and dielectric dispersion with frequency at the lower temperatures were observed. The variation of the temperature corresponding to maximum dielectric constant T_m, with frequency follows the Vogel-Fulcher relation, which is the characteristic of the relaxor-like behavior of the material. With the increase of ac drive, the T_max was shifted to lower value.     

Magneto-optical Faraday effects in dispersive properties for three-dimensional magnetized plasma photonic crystals

The dispersive properties of three-dimensional magnetized plasma photonic crystals composed of homogeneous magnetized plasma spheres immersed in isotropic dielectric host with face-centered-cubic lattices are theoretically studied based on plane wave expansion method, as the magneto-optical Faraday effects of magnetized plasma are considered. The equations for calculating the band structures are theoretically deduced. The photonic band gap and a flatbands region can be obtained. The influences of host dielectric constant, plasma collision frequency, filling factor, external magnetic field and plasma frequency on the dispersive properties are investigated in detail, respectively, and some corresponding physical explanations are also given. The numerical results show that the photonic band gap can be manipulated by the plasma frequency, filling factor, external magnetic field and host dielectric constant, respectively. However, the plasma collision frequency has no effects on photonic band gap. The location of flatbands region cannot be tuned by any parameters except for the plasma frequency and external magnetic field.     

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

La-doped HfO₂ gate dielectric thin films have been deposited on Si substrates using La(acac)₃ and Hf(acac)₄ (acac = 2,4-pentanedionate) mixing sources by low-pressure metal-organic chemical vapor deposition (MOCVD). The structure, thermal stability, and electrical properties of La-doped HfO₂ films have been investigated. Inductive coupled plasma analyses confirm that the La content ranging from 1 to 5 mol% is involved in the films. The films show smaller roughness of ∼0.5 nm and improved thermal stability up to 750 °C. The La-doped HfO₂ films on Pt-coated Si and fused quartz substrates have an intrinsic dielectric constant of ∼28 at 1 MHz and a band gap of 5.6 eV, respectively. X-ray photoelectron spectroscopy analyses reveal that the interfacial layer is Hf-based silicate. The reliable value of equivalent oxide thickness (EOT) around 1.2 nm has been obtained, but with a large leakage current density of 3 A/cm² at V_g = 1V + V_fb. MOCVD-derived La-doped HfO₂ is demonstrated to be a potential high-k gate dielectric film for next generation metal oxide semiconductor field effect transistor applications.     

Highly frequency-, temperature-, and bias-stable dielectric properties of 500 °C processed Bi2SiO5 thin films with low dielectric loss

Excellent dielectric frequency, bias, and temperature stability of bismuth silicate (Bi₂SiO₅, BSO) thin films with a low dielectric loss has been obtained in this study. The thin films were prepared on Pt/Ti/SiO₂/Si substrates by a chemical solution deposition method at a relatively low annealing temperature of 500 °C. The BSO films have a preferred growth along (200) orientation with dense fine-grained surface morphology. The dielectric constant and dielectric loss of the thin film annealed at 500 °C are 57 and 0.01, respectively, at 100 kHz, with little change between 1 kHz and 100 kHz and in the bias electric field range between −250 kV/cm and 250 kV/cm, indicating that the thin film exhibits a low dielectric loss as well as excellent frequency and bias field stability. The dielectric-temperature measurements confirmed that the BSO thin film annealed at 500 °C also has good temperature stability between 150 K and 450 K. Our results suggest that the BSO thin films have potential applications in the next-generation integrated capacitors.     

Effect of process parameters and post-deposition annealing on the microwave dielectric and optical properties of pulsed laser deposited Bi<Subscript>1.5</Subscript>Zn<Subscript>1.0</Subscript>Nb<Subscript>1.5</Subscript>O<Subscript>7</Subscript> thin films

Bismuth Zinc niobate (Bi_1.5Zn_1.0Nb_1.5O₇) thin films were deposited by pulsed laser deposition (PLD) method on fused silica substrates at different oxygen pressures. The structural, microwave dielectric and optical properties of these thin films were systematically studied for both the as-deposited and the annealed films at 600°C. The as-deposited films were all amorphous in nature but crystallized on annealing at 600°C in air. The surface morphology as studied by atomic force microscopy (AFM) reveals ultra-fine grains in the case of as-deposited thin films and cluster grain morphology on annealing. The as-deposited films exhibit refractive index in the range of 2.36–2.53 (at a wavelength of 750 nm) with an optical absorption edge value of 3.30–3.52 eV and a maximum dielectric constant of 11 at 12.15 GHz. On annealing the films at 600°C they crystallize to the cubic pyrochlore structure accompanied by an increase in band gap, refractive index and microwave dielectric constant.     

Dielectric anomaly in Li-doped zinc oxide thin films grown by sol–gel route

Sol–gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn_1-xLi_xO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400–500 °C. Ferroelectricity in Zn_0.85Li_0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C–V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (P_s) and coercive field were 0.15 μC/cm² and 20 kV/cm, respectively, confirming the presence of ferroelectricity. PACS 77.22Ch; 77.22Ej; 77.80Bh