NMR study of monomethylammonium cation in (CH3NH3)5Bi2Cl11 ferroelectric polycrystal

Spin-lattice relaxation times T₁ and T_1ρ are determined for protons in three polycrystals (CH₃NH₃)₅Bi₂Cl₁₁, (CD₃NH₃)₅Bi₂Cl₁₁ and (CH₃ND₃)₅Bi₂Cl₁₁. The temperature dependencies of the relaxation times obtained for (CH₃NH₃)₅Bi₂Cl₁₁ and (CD₃NH₃)₅Bi₂Cl₁₁ are interpreted as a result of correlated motions of the three-proton groups of the monomethylammonium cation. The minimum of the T_1ρ relaxation time is explained as a result of the oscillations of the symmetry axis of the whole cation.     

Adsorption and reactions of CH2I2 on Ru(001) surface

The adsorption and dissociation of CH₂I₂ were studied at 110 K with the aim of generating CH₂ species on the Ru(001) surface. The methods used included X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), temperature programmed desorption (TPD), Auger electron spectroscopy (AES) and work function measurements. Adsorption of CH₂I₂ is characterized by a work function decrease (0.96 eV at monolayer), indicating that adsorbed CH₂I₂ has a positive outward dipole moment. Three adsorption states were distinguished: a multilayer (T_p=200 K), a weakly bonded state (T_p=220 K) and an irreversibly adsorbed state. A new feature is the formation of CH₃I, which desorbs with T_p=160 K. The adsorption of CH₂I₂ at 110 K is dissociative at submonolayer, but molecular at higher coverages. Dissociation of the monolayer to CH₂ and I proceeded at 198–230 K, as indicated by a shift in the I(3d_5/2) binding energy from 620.6 eV to 619.9 eV. A fraction of adsorbed CH₂ is self-hydrogenated into CH₄ (T_p=220 K), and another one is coupled to di-σ-bonded ethylene, which — instead of desorption — is converted to ethylidyne at 220–300 K. Illumination of the adsorbed CH₂I₂ initiated the dissociation of CH₂I₂ monolayer even at 110 K, and affected the reaction pathways of CH₂.     

Specific heat of the cubic high-Tc superconductor Ba0·6K0·4BiO3

We report magnetic susceptibility and specific heat measurements on polycrystalline samples of the 30 K superconductor Ba_0·6K_0·4BiO₃. Normal-state magnetization measurements indicate a Pauli-paramagnetic susceptibility of χ_pauli = 2.3 × 10⁻⁵ emu/mole, from which we infer a value for the density of states at the Fermi level of N(0) = 8.6 × 10 ²¹ev⁻¹cm.⁻³ Specific heat measurements performed between 1.6 K and 40 K indicate that considerable lattice softening occurs at low temperatures; the effective Debye temperature drops from 280 K at 35 K to 210 K at 4 K, implying that soft phonon modes are present in this compound. This result indicates that conventional phonon-mediated interactions may be responsible for the high transition temperature exhibited by Ba_0·6K_0·4BiO₃.     

Effect of Cu doping in MgB2 superconductor at various processing temperatures

The effects of Cu doping in MgB₂ superconductor has been studied at different processing temperatures. The polycrystalline samples of Mg_1−xCu_xB₂ with x = 0.05 were synthesized through the in-situ solid sate reaction method in argon atmosphere at different temperature range between 800–900 °C. The samples were characterized through X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and low temperature R–T measurement techniques for the phase verification, microstructure and superconducting transition temperature, respectively. The XRD patterns of Mg_1−xCu_xB₂ (x = 0.05) do not exhibit any impurity traces of MgB₄ or MgB₆ and they show the sharp transition in the samples prepared at 850 °C. The onset transition temperature of the prepared samples is around 39 K, which is almost the same as that for the pure MgB₂. This indicates that Cu doping in MgB₂ does not affect the transition temperature. The SEM micrograph of Mg_0.95Cu_0.05B₂ has shown that the sample is dense with grain size smaller than 1 μm.     

Structure and superconductivity of HgBa2CuO4+δ

We have used neutron powder diffraction to investigate the defect structure of HgBa₂CuO_4+δ. An interstitial oxygen defect in the Hg plane is the primary doping mechanism. A superconducting transition temperature, T_{c onset}, of 95 K is achieved when ≈0.06 oxygen atoms per formula unit are incorporated at this site by annealing the sample at 500°C in pure oxygen. Annealing in argon at 500°C lowers the oxygen content in this site to ≈0.01 and results in a T_c of 59 K. The neutron powder diffraction data give evidence for a second defect in the Hg plane which we conclude involves the substitution of copper for about 8% of the mercury and the incorporation of additional oxygen (≈0.1 atoms per formula unit), presumably bonded to the copper defects. In the present samples, the concentration of this defect does not vary with synthesis conditions and its contribution to doping is, therefore, unclear. The structure of the compound is the same at room temperature and superconducting temperatures.     

Longitudinal nuclear relaxation measurements in hcp H2

Measurements of T₁ in the hep phase of H₂, over the temperature range 2°–12°K and the ortho concentration range between 0.5 and 0.97 are presented. At temperatures below 10°K, the thermally activated self-diffusion is negligible and the mechanism for nuclear relaxation is that attributed by Moryia and Motizuki and by Harris to intramolecular dipolar interaction, modulated by intennolecular electric quadrupole-quadrupole (EQQ) interaction. The gaussian approximation for the correlation function was used by these authors to predict T₁. From the comparison between experiment and theory, we determine the EQQ parameter Γ/k_B to be 0.67°K. Above 10°K the effect of diffusion influences T₁, and the experimental results for an 88 per cent ortho H₂ sample up to the melting point suggest that the relaxation mechanisms resulting from EQQ interaction and diffusion are not independent of one another.     

Composite protonic solid electrolytes in the CsHSO4-SiO2 system

Transport, thermal and structural properties of the composite solid electrolytes (1 −x)CsHSO₄---xSiO₂ (where x = 0–0.8) were investigated. The composites were prepared by mechanical mixing of components followed by heating at temperatures near CsHSO₄ melting point (483 K). The dependence of low temperature phase conductivity on x has a maximum with a value 2.5 orders of magnitude higher than that of pure CsHSO₄ and conductivity is governed by protons. Heterogeneous doping is shown to change markedly the thermodynamic parameters of the ionic component. The phase transition temperature CsHSO₄ in the composites decreases from 414 to 350 K with the increase of the content of heterogeneous additive SiO₂ from 0 to 0.7. As x raises CsHSO₄ the amorphization takes place and the relative change of ionic conductivity at phase transition diminishes, the phase transition becomes diffusive and disappears for the 0.2CsHSO₄---0.8SiO₂ composite.     

Superconducting Nd1.85Ce0.15CuO4 films grown by the pulsed electron deposition technique

Nd_1.85Ce_0.15CuO_4−δ superconducting thin films were prepared on (1 0 0) SrTiO₃ substrates by pulsed electron deposition technique without reducing atmosphere. Oxygen content is finely controlled by high temperature vacuum annealing, and optimal superconductivity has been obtained. The deposition conditions of the film are discussed in details. Higher deposition temperature and lower gas pressure result in the loss of copper and the appearance of the foreign phase Ce_0.5Nd_0.5O_1.75. High quality Nd_1.85Ce_0.15CuO_4−δ epitaxial films are deposited at 840–870 °C in the mixed gas with a ratio of O₂:Ar = 1:3.     

The interaction of C2Cl4 with fe(110)

Quantitative adsorption studies, temperature programmed desorption (TPD) and Auger spectroscopy have been used to study the interaction of C₂Cl₄ with Fe(110) at 90 and 325 K. At 90 K, multilayer C₂Cl₄ adsorption occurs. The following desorption products are observed in the temperature range of 90–1050 K: C₂Cl₄ from the multilayer and the monolayer, FeCl₂, and a high mass iron chloride species with mass spectrometer cracking products FeCl⁺₂, FeCl⁺, and Fe⁺. Irreversible dissociative C₂Cl₄ adsorption occurs at 325 K and the only desorption product which is observed is the high mass iron chloride species. Auger spectroscopy shows that surface carbon from C₂Cl₄ starts to diffuse into the bulk of the crystal at ˜ 480 K while small coverages of chlorine remain on the surface of the crystal even after heating to 1050 K. Comparison of the behavior of C₂Cl₄ and CCl₄ on Fe(110) indicates that radical products (·CCl₃ and :CCl₂) observed to be produced from CCl₄ adsorption are not produced from C₂Cl₄ adsorption. This difference is probably due to the enhanced surface reactivity of the C=C bond in C₂Cl₄. A special reactivity of iron defect sites for C₂Cl₄ is observed through the production of associated FeCl₂ species which desorb via zero-order kinetics with an activation energy of 44.8 ± 8.5 kcal/mol, the sublimation enthalpy of FeCl₂.     

Reversible H2 passivation of Si ≡ Si3 interface defects in (1 1 1)Si/SiO2

K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 1]P_b centers (^*Si ≡ Si₃ defects with unpaired sp³ hybrid [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO₂ interface. This has been enabled by the perfectly reversible H₂ passivation of P_b, which affects the defect's spin state. Sequential hydrogenation at 253–353°C and degassing treatments in high vacuum at 743–835°C allowed to vary the P_b density in the range 5 × 10¹⁰ < [P_b] (1.14 ± 0.06) × 10¹³ cm^-2. With increasing [P_b] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO₂ interfaces, dry thermally grown at ≈920°C, naturally comprise a ^*Si ≡ Si₃ defect density — passivated or not — of 1.14 × 10¹³ cm^-2.     

Crystal and magnetic structure of the sulfur spinels Cu0.45Co0.55Cr2S4 - xSex

The magnetic and crystal structures of the metallic sulfospinels Cu_0.45Co_0.55Cr₂S_{4 - x}Se_x have been investigated for x = 0, 0.42 and 1.0 by neutron powder diffraction techniques. The data have been analyzed by the Rietveld method. All three compositions show ferrimagnetism at low temperatures with a chromium moment of (2.7±0.1)μ_B and a cobalt moment of (2.8±0.1)μ_B. The Curie temperature varies from 293 to 253 K.     

The effects of substrate temperature on the superconducting properties of Tl2Ca2Ba2Cu3O10 films sputter-deposited from stoichiometric oxide targets

The annealing characteristics and the superconducting properties of Tl₂Ca₂Ba₂Cu₃O₁₀ thin films sputter-deposited onto yttrium- stabilized ZrO₂ substrate at up to 500°C from two stoichiometric oxide targets are reported. The films deposited at 400–500°C were found to require a lower post-annealing temperature than the films deposited at lower temperatures to attain the highest T_c superconducting state, due to a more pronounced Ba diffusion toward the substrate as indicated by their secondary ion mass spectrometry depth profiles. The highest T_c achieved tends to degrade with increasing substrate temperatures, a zero resistance T_c of 121 and ≈90 K, respectively, being observed for the films deposited at -ambient temperature and at 500°C. The formation of the highest T_c phase (Tl₂Ca₂Ba₂Cu₃O₁₀) generally is associated with a sheet type of crystal growth morphology with smooth and aligned surfaces which can be obtained only from the films capable of sustaining prolonged annealing at 900°C. Annealing at lower temperatures (≈860°C) results in the formation of rod or sphere type of morphologies with rough and randomly oriented crystals and the lower T_c phases such as Tl₂Ca₁Ba₂Cu₂O₈.     

Ln1−xSrxCoO3(Ln = Sm, Dy) for the electrode of solid oxide fuel cells

The perovskite-type oxides were synthesized in the series of Ln_1−xSr_xCoO₃(Ln = Sm, Dy). The formation of solid solutions in Dy_{1 − x}Sr_xCoO₃ was limited, compared with that in Sm_{1 − x}Sr_xCoO₃. The electrical conductivities of the sintered samples were measured as a function of x in the temperature range 30 to 1000 °C. The highest conductivity of around 500 S/cm at 1000 °C was found in Sm_0.7Sr_0.3CoO₃. The reactivity of all the samples with YSZ was examined at 800–1000 °C for 96 h. The Sr-doped perovskite oxides were more reactive with YSZ and produced SrZrO₃ at 900 °C after 96 h. However, no reaction product between SmCoO₃ and YSZ was observed at 1000 °C for 96 h. The cathodic polarization of the oxide electrodes, sputtered on yttria stabilized zirconia (YSZ), was studied at 800–1000 °C in air. SmCoO₃ shows no degradation of the electrode performance at higher temperatures. The thermal expansion measurements on the sintered samples were carried out from room temperature to 1000 °C. Large thermal expansion coefficients were found in these samples.     

Densification and conductivity enhancement of Na4Zr2Si3O12-based solid electrolytes using TiO2 as a sintering aid

Densification of Na₄Zr₂Si₃O₁₂ (NZS) solid electrolytes was performed by dispersing TiO₂ (0.8–5.9 wt. %, corresponding to 5–30 mol %) in NZS powders prior to sintering at 1200°C. Increases in pellet density, from ca. 65 to 94% of the theoretical (X-ray density) value, and in electrical conductivity from 10⁻⁷ to 10⁻⁶ S/cm at 50°C were observed for small additions of TiO₂, which acts as a sintering aid. AC impedance spectroscopy reveals that the enhancement is not a bulk effect but instead is associated with a reduction in inter-granular constriction resistances within porous NZS ceramics. The presence of adsorbed water species in NZS powders prepared via a sol-gel route is found to have a dramatic effect on the conductivity enhancement.     

Studies of ionic conductivity and structural phase transitions of Na3H(SO4)2 crystal

The complex electrical impedance of Na₃H(SO₄)₂ along the b_m-axis has been measured from 25°C to 316°C in the frequency range 4 kHz–40 MHz. The temperature dependence of the electrical conductivity shows remarkable changes in the temperature range 160°C–260°C. The sample crystal becomes a fast ionic conductor above 260°C. The conduction mechanisms of proton and sodium ions in the different phases are analyzed in detail with respect to the structural features of the sample crystal.     

RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2

Ohmic contacts to p-type CuCrO₂ using Ni/Au/CrB₂/Ti/Au contact metallurgy are reported. The samples were annealed in the 200–700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of 2 × 10⁻⁵ Ω cm² was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB₂ diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.     

Phase transitions in the superionic protonic conductor CsHSeO4 investigated by Brillouin spectroscopy

A Brillouin investigation in CsHSeO₄ has been performed over the temperature range 20–165 °C which includes two phase transitions, in particular the transition to the superionic phase near T_s = 129 °C. We observed strong discontinuities for elastic constants C₁₁, C₂₂ and C₃₃ at T_s and a broadening of the Brillouin lines above T_s. The results are discussed on the basis of a linear coupling between strains and mobile protons.     

Physcio-chemical properties of the non-stoichiometric VS2 and V5S8 phases

Density, Laue back-reflection and powder X-ray measurements have confirmed a previous structural determination of the VS₂-phase. Measurements of the temperature dependence of the magnetic susceptibility and electrical resistivity of VS₂ in the temperature range 100–300°K give evidence that in this structure, as in V₅S₈, there are V atoms with both localized and delocalized d-electrons leading to a paramagnetic susceptibility containing a temperature-independent component and a component in which the permanent magnetic dipoles give rise to a Curie-Weiss behavior.     

Atomic layer deposition of Cr2O3 thin films: Effect of crystallization on growth and properties

Atomic layer deposition of Cr₂O₃ thin films from CrO₂Cl₂ and CH₃OH on amorphous SiO₂ and crystalline Si(1 0 0) and -Al₂O₃() substrates was investigated, and properties of the films were ascertained. Self-limited growth with a rate of 0.05–0.1 nm/cycle was obtained at substrate temperatures of 330–420 °C. In this temperature range epitaxial eskolaite was formed on the -Al₂O₃() substrates. The predominant crystallographic orientation in the epitaxial films depended, however, on the growth temperature and film thickness. Sufficiently thick films grown on the SiO₂ and Si(1 0 0) substrates contained also the eskolaite phase, but thinner films deposited at 330–375 °C on these substrates were amorphous. The growth rate data of films with different phase composition allowed a conclusion that the crystalline phase grew markedly faster than the amorphous phase did. The amorphous, polycrystalline and epitaxial films had densities of 4.9, 5.1 and 5.1–5.3 g/cm³, respectively.     

The magnetic structure of chalcogenid spinel CoRh2S4

Neutron diffraction study on CoRh₂S₄, having the unexpectedly high Néel temperature T_N, shows the layered antiferromagnetic structure. The magnetic moment is (3.0±0.8)μ_B/Co atom. The T_N is confirmed to be 418 K from the temperature dependence of the intensity of the (200) reflection.