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Superconducting Nd1.85Ce0.15CuO4 films grown by the pulsed electron deposition technique |
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| Authors: | YF Guo LM Chen M Lei X Guo PG Li WH Tang |
| Institution: | aNational Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China bDepartment of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018, China |
| Abstract: | Nd1.85Ce0.15CuO4?δ superconducting thin films were prepared on (1 0 0) SrTiO3 substrates by pulsed electron deposition technique without reducing atmosphere. Oxygen content is finely controlled by high temperature vacuum annealing, and optimal superconductivity has been obtained. The deposition conditions of the film are discussed in details. Higher deposition temperature and lower gas pressure result in the loss of copper and the appearance of the foreign phase Ce0.5Nd0.5O1.75. High quality Nd1.85Ce0.15CuO4?δ epitaxial films are deposited at 840–870 °C in the mixed gas with a ratio of O2:Ar = 1:3. |
| Keywords: | Pulsed electron deposition technique Electron-doped Nd1 85Ce0 15CuO4 film |
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