First-principles investigations on the mechanical,thermal,electronic,and optical properties of the defect perovskites Cs_2SnX_6(X= Cl,Br, I)

The mechanical properties, thermal properties, electronic structures, and optical properties of the defect perovskites Cs_2SnX_6(X = Cl, Br, I) were investigated by first-principles calculation using PBE and HSE06 hybrid functional. The optic band gaps based on HSE06 are 3.83 eV for Cs_2SnCl_6, 2.36 eV for Cs_2SnBr_6, and 0.92 eV for Cs_2SnI_6, which agree with the experimental results. The Cs_2SnCl_6, Cs_2SnBr_6, and Cs_2SnI_6 are mechanically stable and they are all anisotropic and ductile in nature. Electronic structures calculations show that the conduction band consists mainly of hybridization between the halogen p orbitals and Sn 5s orbitals, whereas the valence band is composed of the halogen p orbitals. Optic properties indicate that these three compounds exhibit good optical absorption in the ultraviolet region, and the absorption spectra red shift with the increase in the number of halogen atoms. The defect perovskites are good candidates for probing the lead-free and high power conversion efficiency of solar cells.     

Structural and electronic properties of H-passivated graphene

The atomic and electronic structures of graphane (hydrogen-passivated graphene) are theoretically investigated using the local density approximation (LDA) of the density functional theory (DFT) and the pseudopotential method. Our total energy calculations suggest that the chairlike configuration for graphane is more energetically stable than the boatlike and tablelike configurations by approximately 0.129 eV/cell and 0.655 eV/cell, respectively. Our calculations suggest that the LDA band gap of the chairlike structure is approximately 3.9 eV. The equilibrium geometry and the band structure of the chairlike conformer are investigated and compared with the available experimental and theoretical data. We further present total and partial charge density to reveal the orbital nature of the highest occupied and the lowest unoccupied states.     

γ石墨炔衍生物结构稳定性和电子结构的第一性原理研究

通过基于密度泛函理论的第一原理计算,系统研究了γ石墨炔衍生物的结构稳定性、原子构型和电子性质.γ石墨炔衍生物的结构是由碳六元环以及连接六元环间的碳链组成,碳链上的碳原子数为N=1—6.研究结果表明,碳链上碳原子数的奇偶性对γ石墨炔衍生物的结构稳定和相应的原子构型、电子结构性质具有很大的影响.其奇偶性规律为:当六元环间的碳原子数为奇数时,体系中的碳链均为双键排布,系统呈现金属性;当六元环间的碳原子数为偶数时,系统中的碳链形式为单、三键交替排列,体系为直接带隙的半导体.直接带隙的存在能够促进光电能的高效转换,预示着石墨炔在光电子器件中的应用优势.N=2,4,6的带隙分布在0.94—0.84 eV之间,带隙的大小与碳链上三键的数量和长度有关.研究表明,将碳原子链引入到石墨烯碳六元环之间,通过控制引入的碳原子个数可以调控其金属和半导体电子特性,为设计和制备基于碳原子的可调控s-p杂化的二维材料和纳米电子器件提供了理论依据.     

Diamond-like C2H nanolayer, diamane: Simulation of the structure and properties

We consider a new C₂H nanostructure based on bilayer graphene transformed under the covalent bond of hydrogen atoms adsorbed on its external surface, as well as compounds of carbon atoms located opposite each other in neighboring layers. They constitute a “film” of the 〈111〉 diamond with a thickness of less than 1 nm, which is called diamane. The energy characteristics and electron spectra of diamane, graphene, and diamond are calculated using the density functional theory and are compared with each other. The effective Young’s moduli and destruction thresholds of diamane and graphene membranes are determined by the molecular dynamics method. It is shown that C₂H diamane is more stable than CH graphane, its dielectric “gap” is narrower than the band gap of bulk diamond (by 0.8 eV) and graphane (by 0.3 eV), and is harder and more brittle than the latter.     

Tuning electronic and magnetic properties of AlN nanosheets with hydrogen and fluorine: First-principles prediction

We performed first-principles calculations to study the electronic structures and magnetic properties of the two-dimensional AlN nanosheet decorated with hydrogen and fluorine. The results show that the band gap of AlN nanosheet can be tuned significantly, and they can be a direct or an indirect semiconductor when decorated with H or F atoms on AlN surface. Spin-polarized calculations show that semi-decorated AlN sheets with H or F atoms can present a half-metal or p-type ferromagnetic (FM) semiconductor with Curie temperatures above room temperature. More interestingly, when AlN nanosheet co-decorated with H and F on each side, they show anisotropic semiconducting characters with a band gap of 1.02 eV. Our studies demonstrate that the decoration III-V group semiconductor nanosheets with foreign atoms might be an efficient route to tune the electronic and magnetic properties in low-dimensional materials.     

Edge-functionalization of blue phosphorene nanoribbons: Studied from first-principle methods

Through density functional theory calculations, the impact of edge functionalization with O, OH, and alternate termination of them (OHO) on the structural stabilities, electronic and magnetic properties of blue phosphorene nanoribbons (BPNR) are mainly investigated. The formation energies demonstrate that the O-termination on the BPNRs is the most stable, and OHO-termination is more stable than OH-termination, besides the ab initio dynamic simulation show that they are all thermal dynamically stable at room temperature. Both the ground structures of O- and OH-BPNRs are spin-polarized semiconductors, while OH-functionalized BPNRs are nonmagnetic semiconductors. As the ribbon width increasing, the band gaps of O-aBPNRs tend to 1.04 eV, but that of OH-aBPNRs tend to 1.97 eV, comparable with the band gap of single-layer blue phosphorene, since it is dominated by pz electrons of the inner P atoms. In contrast, the influence of OHO-termination on GNRs, SiNRs, and black PNRs are also studied. Our results demonstrate that OHO-terminated GNRs and SiNRs are not a simple summation of O- and OH-terminated GNRs and SiNRs, and they are nonmagnetic stable both with zigzag and armchair edges, presenting metallic properties. While the OHO-terminated black PNRs present similar electronic and magnetic properties with OHO-terminated blue PNRs, and both the OHO-terminated zigzag and armchair edges are spin-polarized stable. These results provide potential help in the fields of band gap engineering and the designing of phosphorus-based spin devices with control over spin in spintronics.     

表面氢化的双层氮化硼的结构和电子性质

采用第一性原理方法研究了表面氢化的双层氮化硼的结构和电子性质.考虑了表面氢化的双层BN可能存在的六种主要构型,计算结果表明:AB-BN和AA-BN两种构型最为稳定.进一步分析了氢化后的双层BN最稳定构型的能带和电子性质.AB-BN和AA-BN两种构型的原子薄片均为直接带隙半导体,GGA计算的带隙值分别为1.47 eV和1.32 eV.因为GGA通常严重低估带隙值,采用hybrid泛函计算得到带隙值分别为2.52eV和2.34 eV.在最稳定的AB-BN和AA-BN两种构型中,B-N键呈现共价键,而B-H和N-H则具有明显的离子键的特点.在双轴应变下氢化双层BN原子薄片可以被连续地调节带隙,当晶格常数被压缩约8%时,原子薄片由半导体性转变为金属性.     

Energetic and electronic structure of BC2N compounds

The stability and electronic structure of BC2N compounds are studied using first-principle calculations. The investigated structures have the topology of graphite layers with either carbon, nitrogen or boron atoms at each site. The calculations show that stabler structures are obtained by increasing the number of C-C and B-N bonds. On the other hand, less stable structures result from increasing the number of N-N and B-B bonds. The energy gap of the stablest compounds varies from 0.0 to 1.62 eV, depending on the distribution of B, C, and N atoms in the unit cell. The electronic properties of BC2N layered materials strongly depend on their atomic arrangements. The observed changes in energy gaps do not simply follow a symmetry-based argument proposed earlier.     

用第一性原理研究K空位对KDP晶体激光损伤的影响

 用基于密度泛函理论及超软赝势的第一性原理研究了KH­­­₂PO₄(KDP)晶体中K空位的电子结构、形成能及驰豫构型。讨论了K空位形成后电荷密度的重新分布、相应的电子态密度和能带结构等性质。计算得到中性K空位的形成能为6.5 eV, 远小于间隙K原子点缺陷形成能13.07 eV。K空位的存在使晶胞体积增大, 分别沿结晶学轴a方向增大近0.8%, b方向增大近0.87%, c方向增大近1.2%，同时使与之配位的8个氧原子发生较大位移，使这8个氧形成的空腔体积增大近3.2%。空腔体积的增大不仅促进了各种点缺陷的扩散迁移，而且有利于其它杂质原子的填隙。K原子迁移率的增大会引起离子电导率的增大，因而会降低KDP的激光损伤阈值，因此从这个方面讲，K空位的存在是不利的。但是如果能从实验上（如热退火）利用K空位所造成的扩散通道排出或改善缺陷结构，则可提高KDP晶体的光学质量。     

卤化硅烯结构、电子和光学性质的第一性原理研究

二维硅烯的商业用途通常受到其零带隙的抑制,限制了其在纳米电子和光电器件中的应用.利用基于密度泛函理论的第一性原理计算,单层硅烯的带隙通过卤原子的化学官能化被成功打开了,并综合分析了卤化对单层硅烯的结构,电子和光学性质的影响.研究结果表明卤化使结构变得扭曲,但保持了良好的稳定性.通过HSE06泛函,全功能化赋予硅烯1.390至2.123 eV的直接带隙.键合机理分析表明,卤原子与主体硅原子之间的键合主要是离子键.最后,光学性质计算表明,I-Si-I单层在光子频率为10.9 eV时达到最大光吸收,吸收值为122000 cm^-1,使其成为设计新型纳米电子和光电器件的有希望的候选材料.     

The importance of electron correlation in graphene and hydrogenated graphene

Local density approximation (LDA) and Green function effective Coulomb (GW) calculations are performed to investigate the effect of electronic correlations on the electronic properties of both graphene and graphane. The size of band gap in graphane increases from 3.7 eV in LDA to 4.9 eV in GW approximation. By calculating maximally localized Wannier wave functions, we evaluate the necessary integrals to get the Hubbard U and the exchange J interaction from first principles for both graphene and graphane. Our ab-initio estimates indicate that in the case of graphene, in addition to the hopping amplitude t ～ 2.8 eV giving rise to the Dirac nature of low lying excitations, the Hubbard U value of ～8.7 eV gives rise to a super-exchange strength of J _AFM ～ 3.5 eV. This value dominates over the direct (ferromagnetic) exchange value of J _FM ～ 1.6 eV. This brings substantial Mott-Heisenberg aspects into the problem of graphene. Moreover, similarly large values of the Hubbard and super-exchange strength in graphane suggests that the nature of gap in graphane has substantial Mott character.     

硅烯饱和吸附碱金属原子的第一性原理研究

基于密度泛函理论的第一性原理计算, 研究了硅烯饱和吸附碱金属元素原子的稳定性、微观几何结构和电子性质, 并与纯硅烯及其饱和氢化结构进行了对比分析. 研究发现复合物SiX(X=Li, Na, K, Rb)的形成能都是负的, 相对于纯硅烯来说可以稳定存在. Bader电荷分析表明, 电荷从碱金属原子转移至硅原子. 从成键方式来看, 硅烯与氢原子形成共价键, 而与碱金属原子之间形成的键主要是离子性成键, 但还存在部分共价关联成分. 能带计算表明, 锂原子饱和吸附在硅烯形成的复合物SiLi是直接带隙的半导体, 带隙大小为0.34 eV. 其他碱金属饱和吸附在硅烯上形成的复合物都表现为金属性.     

Theoretical investigations of half-metallic ferromagnetism in new Half-Heusler YCrSb and YMnSb alloys using first-principle calculations

Structural,electronic,and magnetic properties of new predicted half-Heusler YCrSb and YMnSb compounds within the ordered MgAgAs Clb-type structure are investigated by employing first-principal calculations based on density functional theory.Through the calculated total energies of three possible atomic placements,we find the most stable structures regarding YCrSb and YMnSb materials,where Y,Cr(Mn),and Sb atoms occupy the(0.5,0.5,0.5),(0.25,0.25,0.25),and(0,0,0) positions,respectively.Furthermore,structural properties are explored for the non-magnetic and ferromagnetic and anti-ferromagnetic states and it is found that both materials prefer ferromagnetic states.The electronic band structure shows that YCrSb has a direct band gap of 0.78 eV while YMnSb has an indirect band gap of 0.40 eV in the majority spin channel.Our findings show that YCrSb and YMnSb materials exhibit half-metallic characteristics at their optimized lattice constants of 6.67  and 6.56 ,respectively.The half-metallicities associated with YCrSb and YMnSb are found to be robust under large in-plane strains which make them potential contenders for spintronic applications.     

First-principle study of nanostructures of functionalized graphene

We present first-principle calculations of 2D nanostructures of graphene functionalized with hydrogen and fluorine, respectively, in chair conformation. The partial density of states, band structure, binding energy and transverse displacement of C atoms due to functionalization (buckling) have been calculated within the framework of density functional theory as implemented in the SIESTA code. The variation in band gap and binding energy per add atom have been plotted against the number of add atoms, as the number of add atoms are incremented one by one. In all, 37 nanostructures with 18C atoms, 3 × 3 × 1 (i.e., the unit cell is repeated three times along x-axis and three times along y-axis) supercell, have been studied. The variation in C–C, C–H and C–F bond lengths and transverse displacement of C atoms (due to increase in add atoms) have been tabulated. A large amount of buckling is observed in the carbon lattice, 0.0053–0.7487 Å, due to hydrogenation and 0.0002–0.5379 Å, due to fluorination. As the number of add atoms (hydrogen or fluorine) is increased, a variation in the band gap is observed around the Fermi energy, resulting in change in behaviour of nanostructure from conductor to semiconductor/insulator. The binding energy per add atom increases with the increase in the number of add atoms. The nanostructures with 18C+18H and 18C+18F have maximum band gap of 4.98 eV and 3.64 eV, respectively, and binding energy per add atom –3.7562 eV and –3.3507 eV, respectively. Thus, these nanostructures are stable and are wide band-gap semiconductors, whereas the nanostructures with 18C+2H, 18C+4H, 18C+4F, 18C+8F, 18C+10F and 18C+10H atoms are small band-gap semiconductors with the band gap lying between 0.14 eV and 1.72 eV. Fluorine being more electronegative than hydrogen, the impact of electronegativity on band gap, binding energy and bond length is visible. It is also clear that it is possible to tune the electronic properties of functionalized graphene, which makes it a suitable material in microelectronics.     

Electronic and optical properties of Ho-doped BYF crystal

First-principles methods have been applied to explore the electronic and optical properties of BYF single crystals heavily doped with the Ho³⁺ ion (16.33 and 30.36 mol%). The electronic properties calculations manifest that the top of the valence band is dominated by 2p-orbitals of the F atoms and 4f-orbitals of the Ho atoms. The new defect states are dominated by 4f-orbitals of the Ho atoms which exist in the forbidden band. The principal absorptionat around 5.13 eV (241.7 nm) and 5.75 eV (215.7 nm) occurs in ultra-violet range owing to the electronic transitions from the occupied 2p-orbitalsof the F atoms as well as 4f-orbitals of the Ho atoms to empty 4f-orbitals of neighboring Ho atoms. Moreover, the influence of crystal field will split the energy levels of rare earth ions and easily release the parity forbidden condition of free rare earth ions resulting in f-f transition. Therefore, there may be a 2 μm luminescence in the Ho-doped BYF crystal.     

A new stable polycrystalline Be2C monolayer: A direct semiconductor with hexa-coordinate carbons

In this paper, by means of the first principles calculations based on density functional theory, a new polycrystalline two-dimensional Be₂C namely Be₂C-III monolayer with orthorhombic atomic configuration is predicted. In this proposed monolayer, Be and C atoms are buckled in four different planes, in which each carbon atom binds to six beryllium atoms, while each beryllium atom is shared by three carbon and its three neighboring beryllium in a quasi-planar structure. First principles calculations confirmed that the new Be₂C-III monolayer is energetically, kinetically, and thermally stable. Through electronic properties investigations, it is found that the proposed monolayer is a direct semiconductor with a medium band gap of 1.75 (2.54 eV) calculated by PBE (HSE06) level of theory which can be effectively modulated by biaxial external strains. As a direct band gap semiconductor with high stabilities this new Be₂C monolayer is a promising candidate for application in electronics and optoelectronics devices.     

CX2(X=F, Cl, Br)与CH3CHO中C－C键插入和环加成的理论模拟

采用密度泛函[DFT]和自然键轨道理论[NBO]及高级电子耦合簇[CCSD(T)]和电子密度拓扑分析[AIM]方法, 研究了单重态二卤卡宾CX2(X=F, Cl, Br)与乙醛CH3CHO 中C—C键的插入反应及其环加成的反应机理. 在B3LYP/6-31G(d)水平上优化了各驻点构型, 用频率分析和内禀反应坐标法(IRC)对过渡态进行了验证, 计算了各物种的CCSD(T)/6-31G(d, p)单点能量. 用经Wigner校正的Eyring过渡态理论分别计算了1大气压下主反应通道的热力学与动力学性质, 并对反应通道中构型进行了自然键轨道及电子密度拓扑分析. 结果表明, CF2与CH3CHO反应的主产物是P2F[CH3CF2CHO: 插入CH3CHO中C-C键, 反应I(2)], 而CCl2及CBr2与CH3CHO反应的主产物是P1Cl[Cl2COCHCH3: 成环反应II(1)]及P1Br[Br2COCHCH3: 成环反应III(1)], 1大气压下, 反应I(2)和II(1)及III(1)进行的适宜温度范围分别为400~1300K和400~1000K.     

Au-Sn金属间化合物的第一性原理研究

采用基于密度泛函理论的第一性原理平面波赝势法,计算研究了Au-Sn二元系金属间化合物的生成焓、结合能、电子结构、弹性性质和结构稳定性. 计算结果表明：Au₅Sn合金的生成焓最小,说明Au₅Sn较容易生成,但Au₅Sn在热力学和力学上是不稳定的;AuSn₂和AuSn₄的键合作用较强,弹性模量、剪切模量均大于AuSn和Au₅Sn;从电子结构的角度,AuSn₂和AuSn₄ 的成键主要来自于Au原子d 轨道与Sn原子p轨道的杂化;而AuSn以Sn–Sn键的相互作用为主,Au₅Sn相中Au 的占比较大,导致Au–Au共价键发挥作用,抑制了Sn导带p电子的成键. 关键词： 电子结构 弹性性质 第一性原理 Au-Sn金属间化合物     

First principles study on the electronic structure and effect of vanadium doping of BN nanowires

The electronic structure and effect of vanadium doping of BN nanowires are studied by first principles calculations. For the pure nanowires, it can be found that B atoms move inwards whereas N atoms move outwards, and BN nanowires have a constant band gap about 4.08 eV with larger diameter. The above-mentioned features are in agreement with those of BN nanotubes. We also find that the pure nanowires become more and more stable with increasing diameter. For V-doped BN nanowires, the V atoms move outwards, and the total energies of pair V-doped BN nanowires indicate that the ferromagnetic ground state, and the electronic structures show half-metallicity. The majority of total spin magnetic moments originate from V atoms, and B atoms which near dopant have a little contribution, while N atoms provide a little reverse magnetic moment. This study may be useful in spintronics and nanomagnets.     

卤素驱动石墨二炔带隙的打开以实现光催化全解水

本文通过杂化密度泛函理论研究了卤素(F、Cl和Br)功能化的石墨二炔的能带结构. 结果表明修饰的石墨二炔的带隙能随着卤素原子对的增加而增加;同时,价带顶的位置受卤素原子电负性大小的影响：当石墨二炔表面的卤素原子数目相同时,卤素原子的电负性越大,改性后石墨二炔的价带顶的位置越深. 另外,计算结果表明石墨二炔的带隙可以通过不同卤素原子的适当混合修饰来有效调节,不同卤素原子混合修饰的石墨二炔的价带底和导带顶跨越了水的氧化还原电位. 通过热力学分析进一步证明,不同卤素原子混合修饰的石墨二炔比单一卤素修饰的石墨二炔表现出更好的光催化水全解反应活性. 这项工作对于如何设计更高效的全解水光催化剂提供了洞见.