第一性原理研究half-Heusler合金VLiBi和CrLiBi的半金属铁磁性

构建只含有一种过渡金属元素的half-Heusler合金VLiBi和CrLiBi.采用第一性原理的全势能线性缀加平面波方法计算half-Heusler合金VLiBi和CrLiBi的电子结构.计算结果表明,VLiBi和CrLiBi是半金属性铁磁体,它们的半金属隙分别是0.25 eV和0.46 eV,晶胞总磁矩分别为3.00 μ_B和4.00 μ_B.磁性计算结果显示,晶胞总磁矩主要来源于V和Cr的原子磁矩,Li和Bi的原子磁矩较弱,而且Bi的原子磁矩为负值.利用平均场近似方法计算合金的居里温度T_C,VLiBi和CrLiBi的居里温度（T_C）的估算值分别为1401 K和1551 K.使晶格常数在±10%的范围内变化,分别计算VLiBi和CrLiBi的电子结构.计算研究表明,晶格常数在-5.6%–10%和-6.9%–10%的范围内变化时VLiBi和CrLiBi仍具有半金属性,并且晶胞总磁矩稳定于3.00 μ_B和4.00 μ_B.采用局域密度近似（LDA）+U（电子库仑相互作用项）的方法计算VLiBi和CrLiBi的电子结构,当U的取值增大到5 eV时VLiBi和CrLiBi仍保持半金属性.此外,采用考虑自旋-轨道耦合（spin-orbit coupling,SOC）效应的广义梯度近似（GGA）+SOC方法计算VLiBi和CrLiBi的电子结构,计算结果显示有微弱的自旋向下能带穿过费米能级,此时VLiBi和CrLiBi在费米面处的自旋极化率分别为98.8%和94.3%,它们的晶胞总磁矩分别为3.03 μ_B和4.04 μ_B.VLiBi的半金属性几乎不受SOC效应的影响,而CrLiBi在费米面处仍有较高的自旋极化率.     

第一原理研究Mn掺杂LiNbO3晶体的磁性和光吸收性质

采用基于密度泛函理论和局域密度近似的第一性原理分析了Mn掺杂LiNbO₃晶体的结构, 磁性, 电子特性和光吸收特性. 文中计算了Mn占据Li位和Nb位体系的形成焓, 对应的形成焓分别为-8.340 eV/atom和-8.0062 eV/atom, 也就意味着Mn 原子优先占据Li位. 这也就意味着Mn原子占据Li位的掺杂LiNbO₃晶体结构更稳定. 磁性分析的结果显示, 其对应磁矩也比占据Nb位的高. 进一步分析磁性的来源, 自旋态密度结果显示: Mn掺杂LiNbO₃晶体的磁性主要源于掺杂原子Mn, Mn原子携带的磁矩高达 4.3 μ_B, 显示出高自旋结构. 由于Mn-3d与近邻O-2p及次近邻Nb-4d 轨道的杂化作用, 计算表明: 诱导近邻O原子及次近邻Nb原子产生的磁矩对总磁矩的贡献较小. 通过光学吸收谱的分析, 得出在可见光区Li位被Mn原子替代以后显示出更好的光吸收响应相比于Nb位. 本文还分析了O空位对于LiNbO₃晶体磁性与电子性质的影响, 结果显示O空位的存在可以增加Mn掺杂LiNbO₃体系的磁性.     

Pr2(Fe0.8Co0.2)14B磁结构的中子衍射研究

本文报道用中子衍射测定的含硼稀土过渡族金属间化合物Pr₂(Fe_0.8Co_0.2)₁₄B的晶体结构与磁结构。将中子三轴谱仪用作二轴粉末衍射仪,在室温测该化合物粉末样品的中子衍射强度,用轮廓精化法弥合衍射数据。该化合物属Nd₂Fe₁₄B类四方结构,α=8.8110?,c=12.2307?。设Pr,Fe和Co原子磁矩间为铁磁耦合,同一晶位的Fe,Co原子磁矩相等,存在沿c轴的易磁化 关键词：     

Ti Impurity Effect on the Optical Coefficients in 2D Cu_2Si: A DFT Study

The electronic and optical properties of 2D Cu_2Si and Cu_2Si:Ti are investigated based on the density functional theory(DFT) using the FP-LAPW method and GGA approximation. The 2D Cu_2Si has metallic and non magnetic properties, whereas adding Ti impurity to its structure changes the electronic behavior to the half-metallic with 3.256μB magnetic moment. The optical transition is not occurred in the infrared and visible area for the 2D Cu_2Si in x-direction and by adding Ti atom, the real part of dielectric function in the x-direction, Re(ε(ω))_x is reached to a Dirac peak at this energy range. Moreover, the absorption gap tends to zero in x-direction of the 2D Cu_2Si:Ti.     

Structural,electronic,optical,and magnetic properties of Co-doped Cu_2O

We investigate the magnetic properties of Co-doped Cu_2O. We studied first the electronic and structural properties of Cu_2O using the optimization of the lattice constant which is 4.18 . The calculated gap is found between 0.825 eV and1.5 eV, these values are in good agreement with the experimental results. The Co atoms are inserted in Cu_2O by means of the density functional theory(DFT) using LSDA, LSDA +U, and LSDA + MBJ approximations in the WIEN2 k code, based on the supercell model by setting up 12, 24, and 48 atoms in(1×1 × 2),(1 × 2 × 2), and(2 × 2×2) supercells respectively with one or two copper atoms being replaced by cobalt atoms. The energy difference between the ferromagnetic and antiferromagnetic coupling of the spins located on the substitute Co has been calculated in order to obtain better insight into the magnetic exchange coupling for this particular compound. The studied compound exhibits stable integer magnetic moments of 2 μBand 4 μBwhen it is doped with 2 atoms of Co. Optical properties have also been worked out. The results obtained in this study demonstrate the importance of the magnetic effect in Cu_2O.     

ab initio Study of Electronic Structure and Magnetic Properties of a Novel Two-Dimensional Copper(II)-Radical Complex [Cu(NTTmPy)2(N3)2]n

The full-potential linearized augmented plane wave (FPLAPW) method with the generalized gradient approximations (GGA) is applied to study the compound [Cu(NTTmPy)₂(N₃)₂]_n (NITmPy=2-(3'-Pyridy1)-4, 4, 5, 5-tetramethylimidazolin-1-oxy1-3-oxide). The total density of states (DOS) and the partial density of states (pDOS) are calculated to explain the electronic and the magnetic properties of [Cu(NTTmPy)₂(N₃)₂]_n. It is found that [Cu(NTTmPy)₂(N₃)₂]_n is stable in the ferromagnetic state and the magnetic moment of the molecule mainly comes from the Cu atoms (0.518 μ_B) with partial contribution from N, O atoms of nitronyl nitroxide radicals. There exist orbital hybridization between 3d orbital of Cu and p orbitals of N(1) (from pyridyl rings of the NITmPy ligands) and N(4) (from azido group) and the weak direct exchange interactions between Cu and O atoms of nitronyl nitroxides. In addition, the bridging carbon atom (C(6)) carries a significant negative spin density (-0.019μ_B). The sign alternation of the magnetic moment along the pyridyl ring is obtained, which agrees with experiments.     

Structures,stabilities,and magnetic properties of the Fe_nAu(n=1-12) clusters

The configurations,stabilities,electronic,and magnetic properties of Fe_nAu(n = 1–12) clusters are investigated systematically by using the relativistic all-electron density functional theory with the generalized gradient approximation.The substitutional effects of Au in Fe_(n+1)(n = 1,2,4,5,10–12) clusters are found in optimized structures which keep the similar frameworks with the most stable Fe_(n+1)clusters.And the growth way for Fe_nAu(n = 6–9) clusters is that the Au atom occupies a peripheral position of Fen cluster.The peaks appear respectively at n = 6 and 9 for Fen Au clusters and at n = 5 and 10 for Fe_(n+1)clusters based on the size dependence of second-order difference of energy,implying that these clusters possess relatively high stabilities.The analysis of atomic net charge Q indicates that the charge always transfers from Fe to Au atom which causes the Au atom to be nearly non-magnetic,and the doped Au atom has little effect on the average magnetic moment of Fe atoms in Fen Au cluster.Finally,the total magnetic moment is reduced by 3 μB for each of Fen Au clusters except n = 3,11,and 12 compared with for corresponding pure Fe_(n+1) clusters.     

Ga空位对GaN:Gd体系磁性影响的第一性原理研究

采用基于密度泛函理论的第一性原理结合投影缀加平面波的方法,研究了GaN中Ga被稀土元素Gd替代以及与邻近N或Ga空位组成的缺陷复合体的晶格常数、磁矩、形成能以及电子结构等性质.结果发现,Gd掺杂GaN后禁带宽度变窄,由直接带隙半导体转为间接带隙半导体;单个Gd原子掺杂给体系引入大约7μB的磁矩;在Gd与Ga或N空位形成的缺陷复合体系中,N空位对引入磁矩贡献很小,大约0.1μB,Ga空位能引入约2μB的磁矩.随着Ga空位的增多,体系总磁矩增加,但增加量与Ga空位的位置分布密切相关.当Ga空位分布较为稀疏时,Gd单原子磁矩受影响较小,但当Ga空位距离较近且倾向于形成团簇时,Gd单原子磁矩明显增加,而且这种情况下空位形成能也最小.     

Strain-induced magnetism in ReS_2 monolayer with defects

We investigate the effects of strain on the electronic and magnetic properties of ReS_2 monolayer with sulfur vacancies using density functional theory.Unstrained ReS_2 monolayer with monosulfur vacancy(V_s) and disulfur vacancy(V_(2S))both are nonmagnetic.However,as strain increases to 8%,V_S-doped ReS_2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment.In particular,for V_(2S)-doped ReS_2 monolayer,the system becomes a magnetic semiconductor under 6%strain,in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other,and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60μb under 7%strain.Our results imply that the strain-manipulated ReS_2 monolayer with V_S and V_(2S) can be a possible candidate for new spintronic applications.     

Neutron diffraction study of magnetic ordering in ErMn2Si2, ErMn2Ge2 and ErFe2Si2

Neutron diffraction study of polycrystalline compounds ErMn₂Si₂, ErMn₂Ge₂ and ErFe₂Si₂ was performed in the temperature range between 1.8 and 293 K. All compounds have tetragonal, ThCr₂Si₂-type crystal structure. The antiferromagnetic collinear structure of ErMn₂Si₂ and ErMn₂Ge₂ at both RT and LNT, consists of a sequence + - + - of ferromagnetic layers of Mn atoms. The magnetic moment of an Mn atom (≈2μ_B) is parallel to the c-axist. At low temperatures (LHT and lower), the ferromagnetic ordering within the Er sublattice is observed. The magnetic moment (μ_Er ≈ 9μ_B) is perpendicular to the c-axis. From the temperature dependence of the intensities of the magnetic peaks, the following values for the Curie temperatures were obtained: (10±5) K for ErMn₂Si₂ and (8.5±3) K for ErMn₂Ge₂. For ErFe₂Si₂ a collinear antiferromagnetic structure of the + - - + type was found, the magnetic unit cell consisting of the chemical one, doubled along the c-axis.     

Magnetic properties and magnetocaloric effect of the Cr-based spinel sulfides Co_(1-x)Cu_xCr_2S_4

Crystallographic structure, magnetic properties, and magnetic entropy change of the Cr-based spinel sulfides Co_(1-x)Cu_xCr_2S_4(x = 0–0.8) have been investigated. All these compounds crystallize into the cubic spinel structure, the Cu substitution shrinks linearly the lattice constant at a ratio of 0.0223 per Cu atom in the unit cell, and enhances linearly the Curie temperature and the spontaneous magnetization at the rates of 18K and 0.33 μB/f.u. per Cu atom in the unit cell,respectively. All these compounds show a typical behavior of second order magnetic transition, and a room temperature magnetic entropy change of 2.57 J/kg·K is achieved for Co_(0.4)Cu_(0.6)Cr_2S_4.     

氧、硫掺杂六方氮化硼单层的第一性原理计算

采用基于密度泛函理论和投影缀加平面波的第一性原理计算方法, 研究了六方氮化硼单层(h-BN)中的氮原子缺陷(V_N)、氧原子取代氮原子(O_N)和硫原子取代氮原子(S_N)时的几何结构、磁性性质和电子结构.研究发现, V_N和O_N体系形变较小, 而S_N体系形变较大; h-BN本身无磁矩, 但具有N缺陷或者掺杂后总磁矩都是1 μ_B; 同时给出了态密度和能带结构.利用掺杂体系的局域对称性和分子轨道理论解释了相关结果, 尤其是杂质能级和磁矩的产生. 关键词： 六方BN单层 第一性原理计算 密度泛函理论 分子轨道理论     

MoSi2薄膜电子性质的第一性原理研究

采用第一性原理计算方法, 研究了四方MoSi₂薄膜的电子性质. 计算结果表明, 各种厚度的薄膜都是金属性的, 并且随着厚度的增加, 其态密度与能带结构都逐渐趋近于MoSi₂块体的特性. 通过对MoSi₂薄膜磁性的分析, 发现三个原子层厚的薄膜具有磁性, 其原胞净磁矩为0.33 μ_B; 而当薄膜的厚度大于三个原子层时, 薄膜不具有磁性. 此外, 进一步对单侧加氢饱和以及双侧加氢饱和结构下三原子层MoSi₂薄膜的电子性质进行了研究, 发现单侧加氢饱和的三原子层MoSi₂薄膜具有磁性, 其原胞净磁矩为0.26 μ_B, 而双侧加氢饱和三原子层MoSi₂薄膜是非磁性的. 双侧未饱和与单侧加氢饱和的三原子层MoSi₂薄膜的自旋极化率分别为30%和33%. 这些研究结果表明, 三原子层厚的MoSi₂ 超薄薄膜在悬空或者生长于基底之上时具有金属磁性, 预示着它在纳米电子学和自旋电子学器件等方面都有潜在的应用前景.     

Electronic structures and magnetic properties of Zn-and Cd-doped AlN nanosheets:A first-principles study

In this paper, the magnetic properties, electronic structures and the stabilities of Zn/Cd incorporated two-dimensional Al N nanosheets are investigated by the first-principles method. Numerical results indicate that Zn and Cd substituting Al atom in Al N nanosheets introduce some holes into the 2p orbitals of the N atoms, and the holes mainly come from spindown 2p orbitals of the N atoms. The magnetic moment of 1.0 μBis produced by Zn/Cd doping Al N nanosheets, and the main component of the magnetic moment of the system is contributed by the partially filled 2p states of the N atoms around the dopant. In particular, when Zn/Cd substituting Al atoms, the magnetic coupling is found to be ferromagnetic. We attribute the hole-mediated p–d interaction to the created ferromagnetic coupling. More importantly, the result of formation energy indicates that Al atom is more inclined to be replaced by Zn atom rather than Cd. This finding is beneficial to developing the spin electronic devices.     

Electronic Structure and Magnetic Properties of Cr-Doped AlN

To understand the electronic and magnetic properties, we have studied Cr-doped zinc-blende AlN system in detail by applying a first-principle plane wave pseudopotential method based on the density functional theory within the local spin density approximation. The analyses of the band structures, density of states, exchange interactions, and magnetic moments show that Al1-xCrxN alloys may exhibit a half-metallic ferromagnetism character, that Cr in the diluted doping limit forms near-midgap deep levels, and that the total magnetization of the cell is 3μB per Cr atom, which does not change with Cr concentration. Moreover, we have succeeded in predicting that Al1-xCrzN alloys in x = 0.0625 has a very high Curie temperature, and lind that ferromagnetic exchange interaction between magnetic dopants is short-ranged.     

First-principles calculations of 5d atoms doped hexagonal-AlN sheets：Geometry,magnetic property and the influence of symmetry and symmetry-breaking on the electronic structure

The geometry, electronic structure and magnetic property of the hexagonal AlN(h-AlN) sheet doped by 5d atoms(Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au and Hg) are investigated by first-principles calculations based on the density functional theory. The influence of symmetry and symmetry-breaking is also studied. There are two types of local symmetries of the doped systems: C3v and D3h. The symmetry will deviate from exact C3v and D3h for some particular dopants after optimization. The total magnetic moments of the doped systems are 0μBfor Lu, Ta and Ir; 1μB for Hf, W, Pt and Hg; 2μB for Re and Au; and 3μB for Os and Al-vacancy. The total densities of state are presented, where impurity energy levels exist. The impurity energy levels and total magnetic moments can be explained by the splitting of 5d orbitals or molecular orbitals under different symmetries.     

FORMATION AND MAGNETIC PROPERTIES OF NEW COMPOUNDS R3Fe29-xCrx(R=Y,Ce,Nd,Sm,Gd,Tb,and Dy)

A systematic investigation of structure and magnetic properties of the new R₃Fe_29-xCr_x compounds(R=Y,Ce,Nd,Sm,Gd, Tb,and Dy)has been performed. The Curie temperature of R₃Fe_29-xCr_x increased with increasing atomic number fromR=Ce to Gd and de creased from Gd to Dy. The saturation magnetization of R₃Fe_29-xCr_x at 4.2 K decreased gradually with increasing atomic number from R=Y to Dy,except for Ce. The spin reorientations of the easy magnetization d irection were observed at around 230 K for Nd₃Fe_24.5Cr_4.5 and 180 K for Tb₃Fe_28.0Cr_1.0,and the magnetohistory effects were obser ved for Nd₃Fe_24.5Cr_4.5 and Sm₃Fe_24.0Cr_5.0 in a low field of about 0.04 T. First order magnetization process occurs in magnetic field of around 2.3 T at room temperature for Tb₃Fe_28.0Cr_1.0. The saturation magnetization of Y₃Fe_27.2Cr_1.8 at 4.2 K is 52.2μ_B/f.u., which corresponds to an average magnetic moment of 1.92μ_B per each Fe atom.     

Structural,electronic,and magnetic behaviors of 5d transition metal atom substituted divacancy graphene:A first-principles study

Structural, electronic, and magnetic behaviors of 5d transition metal(TM) atom substituted divacancy(DV) graphene are investigated using first-principles calculations. Different 5d TM atoms(Hf, Ta, W, Re, Os, Ir, and Pt) are embedded in graphene, these impurity atoms replace 2 carbon atoms in the graphene sheet. It is revealed that the charge transfer occurs from 5d TM atoms to the graphene layer. Hf, Ta, and W substituted graphene structures exhibit a finite band gap at high symmetric K-point in their spin up and spin down channels with 0.783 μB, 1.65 μB, and 1.78 μB magnetic moments,respectively. Ir and Pt substituted graphene structures display indirect band gap semiconductor behavior. Interestingly, Os substituted graphene shows direct band gap semiconductor behavior having a band gap of approximately 0.4 e V in their spin up channel with 1.5 μB magnetic moment. Through density of states(DOS) analysis, we can predict that d orbitals of 5d TM atoms could be responsible for introducing ferromagnetism in the graphene layer. We believe that our obtained results provide a new route for potential applications of dilute magnetic semiconductors and half-metals in spintronic devices by employing 5d transition metal atom-doped graphene complexes.     

Tight-binding study of ammonia and hydrogen adsorption on magnetic cobalt systems

The semi-empirical self-consistent tight-binding model of ammonia and hydrogen adsorption at Co(0001) and small Co clusters is used to study the chemisorption role in surface magnetism. The adsorbate choice has been suggested by recent experiments. At the Co(0001) surface the atomic magnetization is predicted to diminish locally by 0.26 μ_B due to an isolated hydrogen atom adsorption; for Co₁₃ clusters the change is somewhat smaller but less localized. At H(1×1)–Co(0001) the magnetization of surface Co atoms drops to 0.88 μ_B. The hydrogen magnetic moment is very small and couples antiferromagnetically to Co. Ammonia adsorption is found to reduce the Co atom magnetization locally by 0.1 μ_B or less. We discuss the possibility of adsorbate–metal antiferromagnetic coupling in more detail.     

The electronic structure and properties of the C15 compounds CeAl2, LaAl2 and YAl2

Results of self-consistent band calculations are reported for the C15 structured XAl₂ materials (X = Y, La, and Ce) using the local spin density functional formalism for assumed ferromagnetic and antiferromagnetic states as well as the paramagnetic state. The X-atoms are found to be the dominant factor is determining the electronic structure near the Fermi energy and this is enhanced by the presence of f-bands close to (LaAl₂) or at (CeAl₂) the Fermi energy. In paramagnetic CeAl₂, the f-bands are about 1 eV wide and, although principally above the Fermi energy, extend down to accomodate the additional electron compared to LaAl₂. The ferromagnetic state is found not to be stable. By contrast, the antiferromagnetic state is found to be stable with a magnetic moment of 0.88μ_B per Ce atom in very good agreement with the maximum moment, 0.89μ_B found in the neutron measurements of Barbara et al. A significant narrowing of the f-bandwidth is observed in the antiferromagnetic state. The antiferromagnetic spin density ordering appears to be related to nesting features in this underlying Fermi surface in LaAl₂ (i.e., no 4f electron) rather than that of CeAl₂.