Effects of the 3d transition metal doping on the structural,electronic, and magnetic properties of BeO nanotubesEffects of the 3d transition metal doping on the structural,electronic, and magnetic properties of BeO nanotubesEffects of the 3d transition metal doping on the structural,electronic, and magnetic properties of BeO nanotubes

First-principles calculations have been performed on the structural, electronic, and magnetic properties of seven 3d transition-metal （TM） impurities （V, Cr, Mn, Fe, Co, Ni, and Cu） doped armchair （5,5） and zigzag （8,0） beryllium oxide nanotubes （BeONTs）. The results show that there exists a structural distortion around the 3d TM impurities with respect to the pristine BeONTs. The magnetic moment increases for V- and Cr-doped BeONTs and reaches a maximum for Mn-doped BeONT, and then decreases for Fe-, Co-, Ni-, and Cu-doped BeONTs successively, consistent with the predicted trend of Hund＇s rule to maximize the magnetic moments of the doped TM ions. However, the values of the magnetic moments are smaller than the predicted values of Hund＇s rule due to the strong hybridization between the 2p orbitals of the near O and Be ions of BeONTs and the 3d orbitals of the TM ions. Furthermore, the V-, Co-, and Ni-doped （5,5） and （8,0） BeONTs with half-metal ferromagnetism and thus 100% spin polarization character are good candidates for spintronic applications.     

First-principles calculations of 5d atoms doped hexagonal-AlN sheets：Geometry,magnetic property and the influence of symmetry and symmetry-breaking on the electronic structure

The geometry, electronic structure and magnetic property of the hexagonal AlN(h-AlN) sheet doped by 5d atoms(Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au and Hg) are investigated by first-principles calculations based on the density functional theory. The influence of symmetry and symmetry-breaking is also studied. There are two types of local symmetries of the doped systems: C3v and D3h. The symmetry will deviate from exact C3v and D3h for some particular dopants after optimization. The total magnetic moments of the doped systems are 0μBfor Lu, Ta and Ir; 1μB for Hf, W, Pt and Hg; 2μB for Re and Au; and 3μB for Os and Al-vacancy. The total densities of state are presented, where impurity energy levels exist. The impurity energy levels and total magnetic moments can be explained by the splitting of 5d orbitals or molecular orbitals under different symmetries.     

Magnetic properties of AlN monolayer doped with group 1A or 2A nonmagnetic element: First-principles study

The electronic structure, magnetic properties, and mechanism of magnetization in two-dimensional(2D) aluminum nitride(AlN) monolayer doped with nonmagnetic elements of group 1A(Li, Na, K) or group 2A(Be, Mg, Ca) were systematically investigated using first-principles studies. Numerical results reveal that the total magnetic moments produced by group 1A and group 2A nonmagnetic doping are 2.0μB and 1.0μB per supercell, respectively. The local magnetic moments of the three N atoms around the doping atom are the primary moment contributors for all these doped AlN monolayers. The p orbital of the dopant atom contributes little to the total magnetic moment, but it influences adjacent atoms significantly, changing their density of states distribution, which results in hybridization among the p orbitals of the three closest N atoms, giving rise to magnetism. Moreover, the doped AlN monolayer, having half-metal characteristics,is a likely candidate for spintronic applications. When two group 1A or group 2A atoms are inserted, their moments are long-range ferromagnetically coupled. Remarkably, the energy of formation shows that, if the monolayer has been grown under N-rich conditions, substitution of a group 2A atom at an Al site is easier than substitution of a group 1A atom.     

Magnetic properties of several potential rocksalt half-metallic ferromagnets based on the first-principles calculations

Several rocksalt Sr₄X₃N (X=,O, S, Se, and Te) are predicted to be potential half-metallic ferromagnets free of transition-metal and rare-earth elements by performing the first-principles calculations. Then their magnetic properties, such as the half metallicity and the crystal-cell magnetic moments are investigated. The Sr₄X₃N possibly have higher Curie temperatures and have more stable half metallicity than the Sr₄X₃C. Their crystal-cell magnetic moments are all 1.00 μ_B. The crystal-cell magnetic moments and the half metallicity arise mainly from the N ions. The main mechanism is the strong covalent interaction leading to the sp² hybridized orbitals in the Sr₄X₃N. Then two Sr-5s and three N-2p electrons enter into three sp² hybridized orbitals. Among these five electrons, four electrons are paired and one is unpaired, so there are three spin-up electrons and two spin-down electrons in these sp² hybridized orbitals.     

Band-gap engineering of La_(1-x)Nd_xAlO_3(x = 0,0.25,0.50,0.75,1)perovskite using density functional theory:A modified Becke Johnson potential study

The structural,electronic,and magnetic properties of the Nd-doped Rare earth aluminate,La_(1-x)Nd_xAlO_3(x = 0%to 100%) alloys are studied using the full potential linearized augmented plane wave(FP-LAPW) method within the density functional theory.The effects of the Nd substitution in La AlO_3 are studied using the supercell calculations.The computed electronic structure with the modified Becke–Johnson(m BJ) potential based approximation indicates that the La_(1-x)Nd_xAlO_3 alloys may possess half-metallic(HM) behaviors when doped with Nd of a finite density of states at the Fermi level(E_F).The direct and indirect band gaps are studied each as a function of x which is the concentration of Nddoped La AlO_3.The calculated magnetic moments in the La_(1-x)Nd_xAlO_3 alloys are found to arise mainly from the Nd-4f state.A probable half-metallic nature is suggested for each of these systems with supportive integral magnetic moments and highly spin-polarized electronic structures in these doped systems at E_F.The observed decrease of the band gap with the increase in the concentration of Nd doping in La AlO_3 is a suitable technique for harnessing useful spintronic and magnetic devices.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.     

Structural,electronic and magnetic properties of the Mn-Ni(110) c(2×2) surface alloy

<正>Using first-principles total energy method,we study the structural,the electronic and the magnetic properties of the MnNi(110) c(2×2) surface alloy.Paramagnetic,ferromagnetic,and antiferromagnetic surfaces in the top layer and the second layer are considered.It turns out that the substitutional alloy in the outermost layer with ferromagnetic surface is the most stable in all cases.The buckling of the Mn-Ni(110) c(2×2) surface alloy in the top layer is as large as 0.26 A(1 A=0.1 nm) and the weak rippling is 0.038 A in the third layer,in excellent agreement with experimental results.It is proved that the magnetism of Mn can stabilize this surface alloy.Electronic structures show a large magnetic splitting for the Mn atom,which is slightly higher than that of Mn-Ni(100) c(2×2) surface alloy(3.41 eV) due to the higher magnetic moment.A large magnetic moment for the Mn atom is predicted to be 3.81μB.We suggest the ferromagnetic order of the Mn moments and the ferromagnetic coupling to the Ni substrate,which confirms the experimental results.The magnetism of Mn is identified as the driving force of the large buckling and the work-function change.The comparison with the other magnetic surface alloys is also presented and some trends are predicted.     

Strange magnetic moments of octet baryons under SU (3) breaking

Magnetic moments of octet baryons are parameterized to all orders of the flavor SU(3) breaking with the irreducible tensor technique in order to extract the contribution of each flavor quark to the magnetic moments of the octet baryons. The not-yet measured magnetic moment of ∑⁰ is predicted to be 0.649μ_N. Our parameterized forms for the magnetic moments are explicitly flavor-dependent, and hence each flavor component of the magnetic moments can be evaluated directly via the flavor projection operator. It is found that the strange magnetic moment of the nucleon is suppressed due to the small isoscalar anomalous magnetic moment of the nucleon. In particular, the strange magnetic form factor of the nucleon turns out to be positive, G_N^s(0)=0.428μ_N, which is consistent with recent data.     

Room Temperature Ferromagnetism and Optical Tunability in Cu Doped GaN Nanowires

GaN nanowires doped with 2at.% and 6at.% Cu ions are synthesized by chemical vapour deposition method. Structural and compositional analyses demonstrate that the as-grown nanowires are of single crystal wurtzite GaN structure. Magnetic characterizations reveal that the doped GaN nanowires exhibit room temperature ferromagnetism. The measured saturation magnetic moments are 0.37ug and 0.47ug per Cu atom at 300 K for Cu 2 at. % and 6 at. %, respectively. The photoluminescence spectra show that Cu dopant can tune the band gap of the GaN, which leads to a red shift of band-edge emission with increasing dopant concentration.     

Structural,electronic,and magnetic properties of vanadium atom-adsorbed MoSe_2 monolayer

Using the first-principles calculations, we study the structural, electronic, and magnetic properties of vanadium adsorbed MoSe_2 monolayer, and the magnetic couplings between the V adatoms at different adsorption concentrations. The calculations show that the V atom is chemically adsorbed on the MoSe_2 monolayer and prefers the location on the top of an Mo atom surrounded by three nearest-neighbor Se atoms. The interatomic electron transfer from the V to the nearestneighbor Se results in the polarized covalent bond with weak covalency, associated with the hybridizations of V with Se and Mo. The V adatom induces local impurity states in the middle of the band gap of pristine MoSe_2, and the peak of density of states right below the Fermi energy is associated with the V- dz~2 orbital. A single V adatom induces a magnetic moment of 5 μBthat mainly distributes on the V-3d and Mo-4d orbitals. The V adatom is in high-spin state, and its local magnetic moment is associated with the mid-gap impurity states that are mainly from the V-3d orbitals. In addition,the crystal field squashes a part of the V-4s electrons into the V-3d orbitals, which enhances the local magnetic moment.The magnetic ground states at different adsorption concentrations are calculated by generalized gradient approximations(GGA) and GGA+U with enhanced electron localization. In addition, the exchange integrals between the nearest-neighbor V adatoms at different adsorption concentrations are calculated by fitting the first-principle total energies of ferromagnetic(FM) and antiferromagnetic(AFM) states to the Heisenberg model. The calculations with GGA show that there is a transition from ferromagnetic to antiferromagnetic ground state with increasing the distance between the V adatoms. We propose an exchange mechanism based on the on-site exchange on Mo and the hybridization between Mo and V, to explain the strong ferromagnetic coupling at a short distance between the V adatoms. However, the ferromagnetic exchange mechanism is sensitive to both the increased inter-adatom distance at low concentration and the enhanced electron localization by GGA+U, which leads to antiferromagnetic ground state, where the antiferromagnetic superexchange is dominant.     

Structural, electronic and magnetic properties of the 3d transition metal-doped GaN nanotubes

We have performed first-principles calculations on the structural, electronic and magnetic properties of seven different 3d transition-metal (TM) impurity (V, Cr, Mn, Fe, Co, Ni and Cu) doped armchair (5,0) and zigzag (8,0) gallium nitride nanotubes (GaNNTs). The results show that there is distortion around 3d TM impurities with respect to the pristine GaNNTs for 3d TM-doped (5,5) and (8,0) GaNNTs. The change of total magnetic moment follows Hund’s rule for 3d TM-doped (5,5) and (8,0) GaNNTs, respectively. The total density of states (DOS) indicates that Cr-, Mn-, Fe- and Ni-doped (5,5) GaNNTs as well as Cr-, Mn-, Ni- and Cu-doped (8,0) GaNNTs are all half-metals with 100% spin polarization. The study suggests that such TM-doped nanotubes may be useful in spintronics and nanomagnets.     

Ab initio investigation of local magnetic structures around substitutional 3d transition metal impurities at cation sites in III-V and II-VI semiconductors

The local magnetic structures around substitutional 3d transition metal impurities at cation sites in zinc blende structures of III-V (GaN, GaAs) and II-VI (ZnTe) semiconductors are investigated by using a spin-polarized density functional theory. We find that Cr-, Co-, Cu-doped GaN, Cr-, Mn-doped GaAs and Cr-, Fe-, Ni-doped ZnTe are half metallic with 100% spin polarization. The magnetic moments due to these 3d transition metal (TM) ions are delocalized quite significantly on the surrounding ions of host semiconductors. These doped TM ions have long range interactions mediated through the induced magnetic moments in anions and cations of host semiconductors. For low impurity concentrations Mn in GaAs also has zero magnetic moment state due to Jahn-Teller structural distortions. Based upon half metallic character and delocalization of magnetic moments in the anions and cations of host semiconductors these above mentioned 3d TM-doped GaN, GaAs and ZnTe seem to be good candidates for spintronic applications.     

First principle study of the structural,electronic and magnetic properties of Fe,Co, Ni atomic nanochains encapsulated in single walled and double walled beryllium oxygen nanotubes

By using first-principles calculations within the density function theory, the structural, electronic and magnetic properties of transition metals TM (TM=Fe, Co and Ni) atomic chains wrapped in the single walled and double walled BeO nanotubes are investigated. It is found that all these TM chains @ BeONTs systems are ferromagnetic (FM) and a spin splitting between spin up and down is observed. The high magnetic moment and spin polarization of the TM @ BeONTs systems imply that it can be used as magnetic nanostructure and future applications in permanent magnetism, magnetic recording, and spintronics.     

过渡金属掺杂氧化锌团簇的物性研究

本文采用第一性原理密度泛函理论研究了过渡金属（TM）原子Cr和Fe单掺杂和双掺杂(ZnO)12团簇的结构和磁性质。我们考虑了替代掺杂和间隙掺杂。结果表明Cr 和 Fe间隙掺杂团簇结构最稳定。团簇磁矩主要来自TM原子3d态的贡献,4s 和4p 态也贡献了一小部分磁矩。由于轨道杂化,相邻的Zn和O原子上也产生少量自旋。最近邻TM原子间的磁性耦合,主要由两个TM原子之间的直接短程铁磁耦合和TM和O原子之间通过p-d杂化产生的反铁磁耦合这两种相互作用的竞争来决定。不同TM原子掺杂团簇的总磁矩与TM原子种类以及掺杂位置有关,说明在(ZnO)12团簇中掺杂不同TM原子在可调磁矩的磁性材料的领域有潜在应用价值。     

V掺杂ZnO团簇的结构和磁性质

本文采用第一性原理密度泛函理论系统的研究了V原子单掺杂和双掺杂(ZnO)_(12)团簇的结构和磁性质.我们考虑了三种掺杂方式:替代掺杂,外掺杂和内掺杂.单掺杂时,替代掺杂团簇是最稳定结构,而对于双掺杂,外掺杂团簇是最稳定结构.团簇磁矩主要来自V-3d态的贡献,4s和4p态也贡献了一小部分磁矩.由于轨道杂化,相邻的Zn和O原子上也产生少量自旋.V原子掺杂团簇的总磁矩与掺杂位置有关,说明V掺杂(ZnO)_(12)团簇在可调磁矩的磁性材料领域有潜在应用价值.     

V掺杂ZnO团簇的结构和磁性质

本文采用第一性原理密度泛函理论系统的研究了V原子单掺杂和双掺杂(ZnO)12团簇的结构和磁性质。我们考虑了三种掺杂方式：替代掺杂,外掺杂和内掺杂。单掺杂时,替代掺杂团簇是最稳定结构,而对于双掺杂,外掺杂团簇是最稳定结构。团簇磁矩主要来自V-3d态的贡献,4s和4p态也贡献了一小部分磁矩。由于轨道杂化,相邻的Zn和O原子上也产生少量自旋。V原子掺杂团簇的总磁矩与掺杂位置有关,说明V掺杂(ZnO)12团簇在可调磁矩的磁性材料领域有潜在应用价值。     

Electronic structures and magnetic properties of rare-earth-atom-doped BNNTs

Stable geometries, electronic structures, and magnetic properties of (8,0) and (4,4) single-walled BN nanotubes (BNNTs) doped with rare-earth (RE) atoms are investigated using the first-principles pseudopotential plane wave method with density functional theory (DFT). The results show that these RE atoms can be effectively doped in BNNTs with favorable energies. Because of the curvature effect, the values of binding energy for RE-atom–doped (4,4) BNNTs are larger than those of the same atoms on (8,0) BNNTs. Electron transfer between RE-5d, 6s, and B-2p, N-2p orbitals was also observed. Furthermore, electronic structures and magnetic properties of BNNTs can be modified by such doping. The results show that the adsorption of Ce, Pm, Sm, and Eu atoms can induce magnetization, while no magnetism is observed when BNNTs are doped with La. These results are useful for spintronics applications and for developing magnetic nanostructures.     

过渡金属TM(V,Cr,Mn)掺杂ZnS的电子结构和磁性

采用基于密度泛函理论(DFT)的第一性原理赝势平面波方法,对过渡金属V、Cr、Mn 掺杂ZnS的超晶胞体系进行了几何结构优化,计算了晶格常数、电子结构与磁学性质。研究结果表明：掺入V,Cr后,ZnS表现出明显的半金属性,而掺入Mn后,半金属性不明显;掺入过渡金属TM(V,Cr,Mn)后系统产生的磁矩主要有杂质的3d态电子贡献,且磁矩的大小与过渡金属的电子排布有关。     

Electronic and magnetic properties of V- and Cr-doped zinc-blende AlN

The electronic and magnetic properties of the zinc-blende aluminum nitride doped with V and Cr are studied using the density functional theory (DFT), namely the KKR-CPA-PBE method. Pure AlN is found to be a wide band gap semiconductor, and doping V and Cr single impurities generate ferromagnetic half-metallic behavior. Moreover, the values of the formation energy reveal that these compounds are stable systems for all dopant concentrations. A self-consistent energy minimization scheme determines the ferromagnetic state as the stable magnetic state for V- and Cr-doping AlN. A double exchange mechanism is identified as the mechanism responsible for magnetism in our systems. When increasing doping impurities, the total magnetic moments increase linearly and the Curie temperature T_C, calculated using the mean-field approximation, shows a significant change. The present findings reveal Cr- and V-doped zinc-blende AlN as potential candidates for high Curie temperature ferromagnetic materials.     

Spin-polarized calculations of electronic structures in ferromagnetic and antiferromagnetic Zn0.75TM0.25Se (TM=Cr,Fe, Co and Ni)

In this work, we aim to examine the spin-polarized electronic band structures, the local densities of states as well as the magnetism of Zn_1−xTM_xSe (TM=Cr, Fe, Co and Ni) diluted magnetic semiconductors in the ferromagnetic (FM) and antiferromagnetic (AFM) phases, and with 25% of TM. The calculations are performed by the developed full-potential augmented plane wave plus local orbitals method within the spin density functional theory. As exchange-correlation potential we used the generalized gradient approximation (GGA) form. We treated the ferromagnetic and antiferromagnetic phases and we found that all compounds are stable in the ferromagnetic structure. Structural properties are computed after total energy minimization. Our results show that the cohesive energies of Zn_0.75TM_0.25Se are greater than that of zinc blende ZnSe. We discuss the electronic structures, total and partial densities of states, local moments and the p–d exchange splitting. Furthermore, we found that p–d hybridization reduces the local magnetic moment of TM and produces small local magnetic moments on the nonmagnetic Zn and Se sites. We found also that in the AFM phase the TM local magnetic moments are smaller than in the FM phase; this is due to the greater interaction of the TM d-up and d-down orbitals.