Alumina template-assisted electrodeposition of Bi2Te2.7Se0.3 nanowire arrays

Bi₂Te_2.7Se_0.3 nanowire arrays have been fabricated by electrodeposition into the pores of an anodic aluminum oxide (AAO) template followed by annealing at 300 °C under Ar atmosphere. The as-prepared nanowires were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The nanowires are uniform single crystalline with diameter of ∼14 nm.     

Bi2Te3/Sb超晶格纳米线的外延生长和热电测量

通过脉冲电沉积,外延生长出小单元长度的Bi₂Te₃/Sb超晶格纳米线.借助哈曼方法,测量了超晶格纳米线阵列的热电性能,330 K时的ZT值可达0.15.研究了Bi₂Te₃/Sb超晶格纳米线阵列器件的制冷或者加热能力,发现器件的上下表面的最大温差可以达到6.6 K.     

Solvothermal preparation and characterization of nanocrystalline Bi2Te3 powder with different morphology

Bi₂Te₃-based alloys are currently best-known, technological important thermoelectric materials near room temperature. In this paper, nanocrystalline Bi₂Te₃ with different morphologies was synthesized by a solvothermal process based on the reaction between BiCl₃, Te, and KBH₄ in N,N-dimethylformamide at 100-180 °C. KBH₄ was used as a reducing agent. The products were characterized by X-ray diffraction and transmission electron microscopy (TEM). The particle morphologies and size are dependent on the reaction temperature and time. A possible formation mechanism is proposed.     

Electrodeposition of n-type Bi2Te3−ySey thermoelectric thin films on stainless steel and gold substrates

Thermoelectric films of n-Bi₂Te_3−ySe_y were prepared by potentiostatic electrodeposition technique onto stainless steel and gold substrates at room temperature. These films were used for morphological, compositional and structural analysis by environment scanning electron microscope (ESEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). The effect of different substrates on the structure and morphology of Bi₂Te_3−ySe_y films and relation between Se content in the electrodepositing solutions and in the films were also investigated. These studies revealed that Bi, Te and Se could be co-deposited to form Bi₂Te_3−ySe_y semiconductor compound in the solution containing Bi³⁺, HTeO₂⁺ and H₂SeO₃. The morphology and structure of the films are sensitive to the substrate material. The doped content of Se element in the Bi₂Te_3−ySe_y compound can be controlled by adjusting the Se⁴⁺ concentration in the electrodepositing solution. X-ray diffraction analysis indicates that the films prepared at −40 mV versus saturated calomel electrode (SCE) exhibit strong (1 1 0) orientation with rhombohedral structure.     

Electrochemical deposition of Bi2Te3-based thin films

The electrochemical reduction processes on stainless-steel substrates from an aqueous electrolyte composed of nitric acid, Bi³⁺, HTeO₂⁺, SbO⁺ and H₂SeO₃ systems were investigated using cyclic voltammetry. The thin films with a stoichiometry of Bi₂Te₃, Bi_0.5Sb_1.5Te₃ and Bi₂Te_2.7Se_0.3 have been prepared by electrochemical deposition at selected potentials. The structure, composition, and morphology of the films were studied by X-ray diffraction (XRD), environmental scanning electron microscopy (ESEM) and electron microprobe analysis (EMPA). The results showed that the films were single phase with the rhombohedral Bi₂Te₃ structure. The morphology and growth orientation of the films were dependent on the deposition potentials.     

Fabrication of flower-shaped Bi2O3 superstructure by a facile template-free process

A novel flower-shaped Bi₂O₃ superstructure has been successfully synthesized by calcination of the precursor, which was prepared via a citric acid assisted hydrothermal process. The precursor and Bi₂O₃ were characterized with respect to morphology, crystal structure and elemental chemical state by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It was shown that both the precursor and Bi₂O₃ flower-shaped superstructure were constructed of numerous nanosheets while the nanosheets consisted of a great deal of nanoparticles. Furthermore, key factors for the formation of the superstructures have been proposed; a mechanism for the growth of the superstructure has been presented based on the FESEM investigation of different growth stages.     

Preparation, structure and photo-catalytic performances of hybrid Bi2SiO5 modified Si nanowire arrays

Bi₂SiO₅ modified Si nanowire array films were fabricated as photo-catalysts via dip-coating Bi(NO₃)₃ on silver-assisted electroless wet chemical etching Si nanowires and subsequently annealing. The structures and morphologies of as-prepared samples are characterized by X-ray diffraction, Fourier transform infrared spectrum, scanning electron microscopy and transmission electron microscopy. The results of photocatalytic experiments indicated that the Bi₂SiO₅ modified Si nanowire arrays benefit the improvement for efficient electron-hole separation and photo-catalytic stability, thereby possessing superior photo-degradation performance. These hybrid nanowire arrays will be promising materials for photo-catalysts and degradation agents.     

Fabrication of bismuth telluride nanotubes via a simple solvothermal process

The unique Bi₂Te₃ tubes were obtained via a simple solvothermal reaction in the presence of ethylenediaminetetraacetic acid disodium salt. The product was characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Bi₂Te₃ nanosheets are vertically grown off the tube wall to form Bi₂Te₃ tubes. A possible formation mechanism is proposed.     

Facile synthesis of thiol-stabilized CdSexTe1−x nanocrystals

CdSe_xTe_1−x nanocrystals (x=0.25, 0.40, 0.50, 0.60 and 0.75) were synthesized using thioglycerol as a stabilizing agent. The composition of the CdSe_xTe_1−x nanocrystals was precisely controlled by tuning the precursor (Se/Te) ratio. The structural, morphological and optical properties of the nanocrystals were analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), diffused reflectance spectroscopy (DRS) and photoluminescence (PL) measurements. It is found that the Se/Te ratio significantly affects the properties of the resultant CdSe_xTe_1−x nanocrystals. XRD pattern of the CdSe_xTe_1−x nanocrystals revealed cubic, hexagonal and mixed phases depending on the ratio of Se:Te. Surface morphology of the CdSe_xTe_1−x nanocrystals showed nanoclusters of sizes ∼50 nm, with the adjacent cluster interlinking each other. DRS revealed the size dependence band gap energy prevailing in the CdSe_xTe_1−x nanocrystals from 1.52 to 2.66 eV due to the optical bowing effect. PL measurements exhibited band edge emission in the visible spectral region, and are red shifted with increase in Se concentration. The facile route employed in the present work to synthesis the CdSe_xTe_1−x nanocrystals in an aqueous medium is simple and controllable, and the strategy presented will be handy in preparing diverse semiconducting nanocrystals.     

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

The characteristics of Si-doped Sb₂Te₃ thin films were investigated using differential scanning calorimetry (DSC), four-point probe technique, X-ray diffraction (XRD) analysis and high resolution transmission electron microscopy (HRTEM). It is found that the as-deposited Sb₂Te₃ film in our study is partly crystallized. Silicon doping increases the crystallization temperature and resistivity of Sb₂Te₃ film significantly. XRD and HRTEM analyses indicated that some of the doped Si atoms substitute for Sb or Te in the lattice, while others exists at the grain boundaries in the form of amorphous phase, which may be responsible for grain size reduction and high crystalline resistivity of Si-doped specimens. Compared with the conventional Ge₂Sb₂Te₅ film, Si-doped Sb₂Te₃ films exhibit lower melting temperature and higher crystalline resistivity, which is beneficial to RESET current reduction of phase-change random access memory (PRAM). These results show the feasibility of Si-doped Sb₂Te₃ films in PRAM application.     

Infrared spectroscopy of Bi2Te2Se

The infrared reflection and transmission spectra of Bi₂Te₂Se single crystals grown by the modified Bridgeman method have been studied in the spectral range of 30–10000 cm^?1 at temperatures of 5–300 K. The bandgap and its temperature dependence, optical function spectra, and concentration of free charge carriers in Bi₂Te₂Se have been determined.     

Superconductivity and non-metallicity induced by doping the topological insulators Bi2Se3 and Bi2Te3

We show that by Ca doping the Bi₂Se₃ topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppresses the bulk conductivity. Non-metallic Bi₂Se₃ crystals are obtained. On the other hand, the Bi₂Se₃ topological insulator can also be induced to become a bulk superconductor, with T_c∼3.8 K, by copper intercalation in the van der Waals gaps between the Bi₂Se₃ layers. Likewise, an as-grown crystal of metallic Bi₂Te₃ can be turned into a non-metallic crystal by slight variation in the Te content. The Bi₂Te₃ topological insulator shows small amounts of superconductivity with T_c∼5.5 K when reacted with Pd to form materials of the type Pd_zBi₂Te₃.     

Thermoelectric performance of monolayer Bi2Te2Se of ultra low lattice thermal conductivity

The electronic structure and thermoelectric properties of monolayer Bi₂Te₂Se were studied by density functional theory and semi-classical Boltzmann transport equation. The band gap with TB-mBJ can be improved for monolayer Bi₂Te₂Se. Monolayer Bi₂Te₂Se have ultra-low thermal conductivity comparing with other well-known two-dimensional materials. The monolayer Bi₂Te₂Se can improve electrical conductivities. ZT increases with increasing temperature for monolayer Bi₂Te₂Se. Comparing to GGA, TB-mBJ has larger ZT value in p-type doping. Monolayer Bi₂Te₂Se have larger ZT comparing with other well-known two-dimensional materials. Our calculated results show that our calculation greatly underestimates ZT value, therefore, monolayer Bi₂Te₂Se should have a higher ZT value.     

Synthesis and magnetic properties of spinel CoFe2O4 nanowire arrays

Spinel CoFe₂O₄ nanowire arrays were synthesized in nanopores of anodic aluminum oxide (AAO) template using aqueous solution of cobalt and iron nitrates as precursor. The precursor was filled into the nanopores by vacuum impregnation. After heat treatment, it transformed to spinel CoFe₂O₄ nanowires. The structure, morphology and magnetic properties of the sample were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM). The results indicate that the nanowire arrays are compact. And the individual nanowires have a high aspect ratio, which are about 80 nm in diameter and 10 μm in length. The nanowires are polycrystalline spinel phase. Magnetic measurements indicate that the nanowire arrays are nearly magnetic isotropic. The reason is briefly discussed. Moreover, the temperature dependence of the coercive force of the nanowire arrays was studied.     

Effect of thermal annealing on microstructural properties of Ti/Ge2Sb2Te5/Ti thin films deposited on SiO2/Si substrates by a sputtering method

Ti/Ge₂Sb₂Te₅/Ti thin films deposited by a sputtering method on SiO₂/Si substrates were annealed at 400 °C in N₂ atmosphere and characterized by using transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) in order to investigate the inter-diffusion of the Ti/Ge₂Sb₂Te₅/Ti system due to annealing. The TEM and AES results showed that the interface between the Ti and the Ge₂Sb₂Te₅ layers was unstable and Ti atoms were incorporated into the Ge₂Sb₂Te₅ thin film upon annealing. The Te and Sb atoms of the Ge₂Sb₂Te₅ layer diffused into the Ti layer. The intermixing layers between the Ge₂Sb₂Te₅ layer and two Ti layers were formed. These results indicate that the microstructural properties of the Ti/Ge₂Sb₂Te₅/Ti systems can be degraded by the postgrowth thermal annealing.     

Density functional study of Bi2Te3 and Bi4Te6 molecules

Results of a density functional study for the molecules Bi₂Te₃ and Bi₄Te₆ are reported here. For Bi₂Te₃, calculations yield eight stable conformations. For Bi₄Te₆, eight stable isomers are identified. Equilibrium geometries, adiabatic ionisation potentials, atomisation energies, and vibrational bands are estimated. The lowest energy conformations in both cases are clusters of C_s symmetry with all Te atoms two-fold coordinated and all Bi atoms three-fold coordinated. The predicted low energy conformation for Bi₄Te₆ has alternating rows of Bi and Te atoms. This molecule seems a reasonable precursor to solid bismuth telluride, which has alternating Bi and Te layers.     

粗糙界面对Bi2Te3/PbTe超晶格热电优值影响的理论分析

以Bi₂Te₃/PbTe超晶格薄膜为例,分析电子在Bi₂Te₃量子阱中的输运过程,综合了薄膜的经典散射效应和理想量子效应,并以此混合效应为基础,在PbTe障碍层厚度一定时,模拟计算了两种混合效应中量子效应占不同比例时,Bi₂Te₃/PbTe超晶格热电优值的变化.在镜面反射占混合效应的0.3时,得到的热电优值与当前报道的量子阱超晶格的实验值接近. 关键词： 超晶格 粗糙界面 热电优值     

Synthesis of β-Ga2O3 nanowires through microwave plasma chemical vapor deposition

In this study, we demonstrate the large-scale synthesis of beta gallium oxide (β-Ga₂O₃) nanowires through microwave plasma chemical vapor deposition (MPCVD) of a Ga droplet in the H₂O and Ar atmosphere at 600 W. Unlike the commonly used MPCVD method, the H₂O, not mixture of gas, was employed to synthesize the nanowires. The ultra-long β-Ga₂O₃ nanowires with diameters of about 20-30 nm were several tens of micrometers long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The growth of β-Ga₂O₃ nanowires was controlled by vapor-solid (VS) crystal growth mechanism.     

Raman spectroscopic and photoluminescence study of single-crystalline SnO2 nanowires

Single-crystalline SnO₂ nanowires with sizes of 4-14 nm in diameter and 100-500 nm in length were produced in a molten salt approach by using hydrothermal synthesized precursor. Structural characters of the nanowires were examined by X-ray diffraction and high-resolution electron transmission microscopy. Raman, photoluminescence and X-ray photoelectron spectra of the samples were examined under heat treatments. Three new Raman modes at 691, 514 and 358 cm⁻¹ were recorded and assigned. The former two are attributed to activation of original Raman-forbidden A_2uLO mode and the third is attributed to defects in small-sized nanowires. A strong photoluminescence is observed at about 600 nm, the temperature effects is examined and the origin of the PL process is discussed via X-ray photoelectron spectra.     

Self-assembly of Sb2O3 nanowires into microspheres: Synthesis and characterization

Sb₂O₃ nanowires with diameters of ∼233 nm and microspheres assembled by these nanowires were successfully synthesized by a simple poly-(vinylpyrrolidone) (PVP) assisted hydrothermal method. The morphologies, nano/microstructures and optical properties of the as-grown nanowires and microspheres were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and UV-vis diffuse reflection spectrum. It has been found that the experimental parameters, such as mineralizers, played crucial roles in the morphological control of Sb₂O₃ nanowires. The possible growth mechanism of microspheres has been proposed.