| Excitonic Absorption of Semiconductor Nanorings under Terahertz Fields |
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| 作者姓名： | 张同意 赵卫 朱少岚 |
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| 作者单位： | [1]State Key Laboratory of Transient Optics and Photonics. Xi＇an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi＇an 710068 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 10390161 and 30370420. |
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| 摘 要： | The optical absorption of GaAs nanorings （NRs） under adc electric field and a terahertz （THz） ac electric field applied in the plane containing the NRs is investigated theoretically. The NRs may enclose some magnetic flux in the presence of a magnetic field perpendicular to the NRs plane. Numerical calculation shows that the excitonic effects are essential to correctly describe the optical absorption in NRs. The applied lateral THz electric field, as well as the dc field leads to reduction, broadening and splitting of the exciton peak. In contrast to the presence of a dc field, significant optical absorption peak arises below the zero-field bandgap in the presence ofa THz electric field at a certain frequency. The optical absorption spectrum depends evidently on the frequency and amplitude of the applied THz field and on the magnetic flux threading the NRs. This promises potential applications of NRs for magneto-optical and THz electro-optical sensing.
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| 关 键 词： | 半导体 激子吸收 电磁场 NRs 磁流量 |
| 收稿时间： | 2005-04-19 |
| 修稿时间： | 2005-04-19 |
Excitonic Absorption of Semiconductor Nanorings under Terahertz Fields |
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| Zhang TongYi;Zhao Wei;Zhu ShaoLan.Excitonic Absorption of Semiconductor Nanorings under Terahertz Fields[J].Chinese Physics Letters,2005,22(10):2643-2646. |
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| Authors: | Zhang TongYi;Zhao Wei;Zhu ShaoLan |
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