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1.
A fiber-coupled laser-diode (LD) end-pumped Nd:GdVO 4 slab continuous-wave (CW) 912-nm laser and an LD bar end-pumped Nd:GdVO 4 slab CW 912-nm laser are both demonstrated in this paper. Using the fiber-coupled LD of end-pumped type, a highest CW 912-nm laser output power of 10.17 W is obtained with a high optical-to-optical conversion efficiency of 24.6% and a slope efficiency of 34.5%. The measured M2 factors of beam quality in x and y directions are 5.3 and 5.1, respectively. Besides, an LD bar of end-pumped type is used to realize CW 912-nm laser output, which has the advantages of compactness and low cost. When the pump power is 38.8 W, the output power is 8.87 W and the measured M2 factors of beam quality in x and y directions are 16 and 1.31, respectively. In order to improve the beam quality of the 912-nm laser at x direction, a new quasi-concentric laser resonator will be designed, and an LD bar end-pumped Nd:GdVO 4 slab high-power CW 912-nm TEM 00 laser will be realized in the future. 相似文献
2.
A comparative study of Nd:GdVO 4 and Nd:YVO 4 crystal lasers pumped by a fiber-coupled diode array has been conducted at the 4F 3/2- 4I 9/2 transitions wavelengths of 912 nm and 914 nm, as well as when intracavity frequency-doubled to 456 nm and 457 nm, respectively. At the fundamental wavelength of 912 nm and second harmonic wavelength of 456 nm, maximum output powers from the Nd:GdVO 4 crystal laser were 7.85 W and 4.6 W at a pump power of 29 W. All the results obtained from Nd:GdVO 4 were superior to those of Nd:YVO 4, indicating that Nd:GdVO 4 is a more efficient laser crystal than Nd:YVO 4 for laser operation on the 4F 3/2- 4I 9/2 transitions. 相似文献
3.
A diode-laser-array end-pumped efficient CW Nd:GdVO 4 laser at 1.06 μm has been developed. A low-order-mode output power of 14.3 W was obtained at the maximum available pump power
of 26 W, giving an optical conversion efficiency of 55% and an average slope efficiency of 62%. The laser output beam quality
factor at full pump power was determined to be M 2<1.8. It is also shown that only lightly doped Nd:GdVO 4 crystals are suitable for high-power end-pumped lasers.
Received: 4 May 1999 / Published online: 29 July 1999 相似文献
4.
LD-pumped actively Q-switched intracavity frequency-doubled Nd:GdVO 4/KTP red laser has been introduced. A maximum red average output power of 0.78 W at 671 nm was obtained at pulse-repetition frequency (PRF) of 15 kHz and the optical conversion efficiency was 6.5%. At the incident pump power of 12 W, the shortest laser pulse occurred at PRF of 15 kHz. Its full-width at half-maximum and the highest peak power were measured to be 35.8 ns and 3.38 kW. The largest single pulse energy of 56.3 μJ was achieved at PRF of 10 kHz. The influence factors on the Q-switched Nd:GdVO 4/KTP red laser have been discussed. 相似文献
5.
We report continuous-wave (CW) and passively Q-switched Nd :GdVO4 lasers on 4F3/2 → 4I13/2 transition directly pumped by an 880 nm diode laser. A widely investigated Nd :GdVO4 laser at about 1341 nm is operated with a maximum output power of 5.23 W and a slope efficiency of about 30.6%. Using an etalon for wavelength selection, we realize laser emission at about 1344 nm, for the first time to our knowledge, in a Nd :GdVO4 laser, with a maximum output power of 4.19 W and a slope efficiency of 20.1%. Moreover, we achieve simultaneous dual-wavelength lasing at 1341 and 1344 nm with a maximum output power of 2.27 W and a slope efficiency of 13.5%, respectively. Using V3+ :YAG as a saturable absorber, stable Q switching is obtained at about 1341 nm with a maximum average output power of 1.15 W. The pulse width is 52.8 ns at a repetition rate of 279.8 kHz. 相似文献
6.
We report on a compact 880-nm diode-directly-pumped passively mode-locked TEM 00 Nd:GdVO 4 laser at 1341 nm with a semiconductor saturable absorber mirror (SESAM) for the first time. Under the absorbed pump power
of 14.6 W, the maximum output power of 1.27 W was obtained at the repetition rate of 85.3 MHz with the pulse width of 45.3
ps, corresponding to an optical-optical efficiency of 8.8% and the slope efficiency of 33.3%, respectively. The beam quality
factor was measured to be M
2 = 1.18, indicating a TEM 00 mode. 相似文献
7.
A high-efficiency 1341 nm Nd:GdVO 4 laser in-band pumped at 912 nm is demonstrated for the first time. Using an all-solid-state Nd:GdVO 4 laser operating at 912 nm as pump source, 542 mW output was obtained with 1.14 W absorbed pump power. The slope efficiency
with respect to the absorbed pump power was 56.6%, and the fluctuation of the output power was better than 2.6% in the given
30 min. The beam quality factor M
2 is 1.15. 相似文献
8.
We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO 4 laser working at 1342 nm by using an uncoated V 3+:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO 4 crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO 4 crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO 4 crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO 4 laser can generate shorter pulse with higher peak power in comparison with a-cut one. 相似文献
9.
With a 10-W diode laser to pump Nd:GdVO 4 crystal in a folded cavity, we demonstrated Cr 4+:YAG passively Q-switched Nd:GdVO 4 lasers at 1.06 μm. The maximum average output power of 2.1 W and the highest peak power of 625 W were, respectively, obtained
when the initial transmissions of the Cr 4+:YAG crystals were 90% and 80%.
Received: 8 September 1999 / Revised version: 30 December 1999 / Published online: 8 March 2000 相似文献
10.
A diode-laser-array end-pumped acousto-optically Q-switched intracavity frequency-doubled Nd:GdVO 4/KTP green laser, formed with a three-mirror folded resonator, has been demonstrated. With 15 W of pump power incident upon
the Nd:GdVO 4 crystal, a maximum average green output power of 3.75 W was obtained at 50 kHz of pulse repetition frequency, giving an optical
conversion efficiency of 25%, whereas the effective intracavity frequency-doubling efficiency was determined to be 72%. At
the incident pump power of 12.8 W, the shortest laser pulse was achieved at a pulse repetition rate of 10 kHz, the resulting
pulse width, single pulse energy, and peak power were measured to be 35 ns, 108 μJ, and 3.1 kW, respectively.
Received: 18 May 2000 / Published online: 20 September 2000 相似文献
11.
Formed with a flat–flat resonator, a diode-laser-array end-pumped CW Nd:GdVO 4 laser at 1.06 μm, capable of generating 8.6 W of TEM 00 output power with optical conversion efficiency of 43% and slope efficiency of 48%, has been developed. The laser beam was nearly diffraction limited, with the beam quality factor measured to be M2=1.22. Under the conditions of multi-mode operation, the laser was able to produce 11.2 W of low-order transverse mode radiation ( M2<2) at the incident pump power of 22 W, giving an optical conversion efficiency of 51%, and a slope efficiency of 55%. 相似文献
12.
We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO 4 laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO 4 laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate. 相似文献
13.
A compact and efficient diode-pumped intracavity-frequency-doubled Nd:GdVO 4/KTP green laser is demonstrated with a flat–flat cavity design. With a 1.3 at. % Nd 3+-doped GdVO 4 crystal and pumped at the weak-absorption peak of 806 nm, the second-harmonic output power at 532 nm was measured to be 1.95 W
at an incident pump power of 8.4 W, corresponding to an optical conversion efficiency of 23.2%. The output characteristic
at the fundamental wavelength of 1.063 μm was investigated with two different pump wavelengths. More than 4.5-W output power
was generated when the laser was pumped at 806.2 nm.
Received: 26 July 2000 / Revised version: 18 September 2000 / Published online: 7 February 2001 相似文献
14.
A laser diode pumped actively Q-switched Nd:GdVO 4 self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency. 相似文献
15.
We investigate the output performance of the 1.06 μm 4F 3/2→ 4I 11/2 transition in Nd:GdVO 4 and Nd:YVO 4 thin-disk lasers under multi-pass pumping with diode lasers at 0.81 μm and at 0.88 μm, which corresponds to direct in-band pumping of the 4F 3/2 emitting level. The use of a pump module with 24 passes through the crystal allowed the realization of an in-band pumped Nd:GdVO 4 thin-disk laser with 14.9 W of continuous wave (cw) output power at 1.06 μm; the overall optical-to-optical efficiency was 0.50 and the slope efficiency with respect to the incident pump power was 0.52. Intracavity frequency-doubling of the Nd:GdVO 4 thin-disk laser with a LiB 3O 5 (LBO) nonlinear crystal yielded 9.1 W of cw output power in the green at 0.53 μm with an overall optical-to-optical efficiency of 0.31. 相似文献
16.
A compact high power diode-side-pumped Nd:GdVO 4 laser has been presented, which can generate an output power of 52 W at 1.063-μm for continuous-wave (CW) operation. The absorption characteristics of the Nd:GdVO 4 in different pump directions is measured, which were used to optimize the diode-side-pumped Nd:GdVO 4 laser head. The laser characteristics of both CW and Q-switched Nd:GdVO 4 and Nd:YAG in are compared and it was found that Nd:GdVO 4 may surpass Nd:YAG for high power laser application. 相似文献
17.
In this letter, a diode-pumped continuous-wave and passively Q-switched 1.06 μm laser with a novel composite YVO 4/Nd:GdVO 4 crystal was demonstrated for the first time. Theoretical calculations showed that the temperature distribution in YVO 4/Nd:GdVO 4 crystal was lower than that in GdVO 4/Nd:GdVO 4 and Nd:GdVO 4 crystals under the same conditions. After optimizing the mode matching degree, a CW output power of 5.6 W of YVO 4/Nd:GdVO 4 laser was obtained at the incident pump power of 12 W when the output coupler with transmission of 30% was employed. Using Cr 4 +:YAG crystals with initial transmission ( T0) of 80% and 90% as saturable absorbers, the pulsed YVO 4/Nd:GdVO 4 laser characteristics were investigated. At the incident pump power of 12 W, the maximum average output power of 2.76 W and the maximum repetition rate of 189 kHz was achieved when T0 = 90% Cr 4 +:YAG was used. The shortest pulse width was 28.1 ns when the initial transmission of the used Cr 4 +:YAG was 80%. 相似文献
18.
The polarised absorption and fluorescence spectra of Nd:Gd 0.8La 0.2VO 4 crystal are measured and compared to those of Nd:GdVO 4. CW laser properties of diode-pumped Nd:Gd 0.8La 0.2VO 4 crystal operating at fundamental wavelengths of 1.06 and 1.34 μm, as well as when intracavity frequency-doubled to 532 and 670 nm, have been studied. The maximum output powers at 1.06 μm, 1.34 μm, 532 nm and 670 nm are 1.18 W, 671 mW, 206 mW and 42 mW respectively, at a diode-launched pump power of 2.9 W. The threshold pump powers are 80, 267, 7 and 15 mW respectively. 相似文献
19.
We have demonstrated a passively Q-switched operation of Nd:GdVO 4 laser in which a GaAs crystal is used as the saturable absorber for the first time as far as we know. A maximum average output power of 1.64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion efficiency and peak power were 13.7% and 116.8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 μJ. 相似文献
20.
Passive mode locking of a solid-state Nd:GdVO 4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd 3+ doped Nd:GdVO 4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz. 相似文献
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