透镜型量子点中类氢杂质基态能的计算

通过有效质量近似和变分法，研究了垂直磁场下透镜型量子点中类氢杂质基态能量，并与球型量子点进行了比较.研究表明：对于球型量子点，基态能仅与杂质的偏离距离有关，与垂直和水平偏离无关；而对于透镜型量子点，由于水平方向和垂直方向束缚势的非对称性，电子基态能不仅与杂质的偏离距离有关，还与杂质偏离方向有关. 关键词： 透镜型量子点 基态能 变分法     

GaAs基InAs量子点中类氢杂质的束缚能

在有效质量近似下,采用微扰法研究了InAs/GaAs量子点内类氢杂质基态及低激发态的束缚能.受限势采用抛物形势,在二维平面极坐标下,精确地求解了电子的薛定谔方程.数值计算结果表明,类氢杂质基态及低激发态的束缚能敏感地依赖于抛物形势的角频率,受类氢杂质的影响,谱线发生蓝移.这一结果对设计和制备量子点器件是有价值的.     

杂质对多电子方形量子点系统基态能的影响

根据密度泛函理论,用自洽迭代的方法求解二维方形量子点中有杂质时电子(N=1~12)的薛定谔方程,对绝对零度情况下处于基态电子的总能量进行了数值计算,并讨论了杂质对量子点中电子基态能量的影响,得出了方形量子点中多电子系统基态的一些性质.     

无限深势阱下杂质量子点的能级计算

在有效质量近似下,垂直方向采用无限深势阱限制势,在x-y平面上,量子点内采用抛物势近似,在量子点边界处采用与实际情况更接近的无限深势阱.在中心杂质电荷为ηe时,利用波函数近似,得到基态和低激发态的能级,与x-y平面均采用抛物势时得到的能级进行了比较.计算发现在量子点真实半径比较小时,电子的基态和低激发态受其影响很大,而相应的能级随量子点的半径逐步增大.在量子点半径大于5倍有效玻尔半径时,能级受其影响已经变得很弱.并且,随着磁场的变化,量子点半径对基态和第一激发态的能级差的影响也很大.最后我们计算了杂质电子的基态束缚能并讨论了声子对其影响.     

闪锌矿GaN量子点中类氢杂质态的束缚能

在有效质量近似下,用变分法研究了闪锌矿GaN/AlxGa1-xN单量子点中的类氢杂质态。结果表明量子点中的杂质位置和量子点结构参数（量子点高度H、半径R及Al含量x）对施主束缚能有很大的影响。当杂质位于量子点中心时,施主束缚能 有最大值。此外,施主束缚能 随着量子点高度H（半径 ）的增大而减小,随着量子点中Al含量x的增大而增大。     

抛物形量子点中弱耦合极化子的性质

采用线性组合算符和幺正变换方法研究了抛物形量子点中弱耦合极化子的基态能量和束缚能。计算结果表明,基态能量和束缚能随有效束缚强度增加而减小。随着有效束缚强度逐渐加大,最后逐渐趋于体结构极化子的基态能量。当有效束缚强度给定,基态能随电子-体纵光学声子耦合强度增加而减小。由于有效束缚强度与量子点受限强度平方根成反比,所以量子点受限越强,基态能和束缚能越大,电子-体纵光学声子耦合强度的变化对量子点的影响越小。当量子点受限变弱时,电子-体纵光学声子耦合强度变化对量子点的影响变大。所以在量子点弱受限区域,极化子对量子点的影响不容忽略。     

抛物量子点中弱耦合磁极化子的性质

应用线性组合算符和幺正变换方法研究了抛物量子点中磁极化子的基态性质。得出基态能和基态束缚能随有效束缚强度增大而减小,随回旋频率增大而增大。当有效柬缚强度给定,基态能量随电子-体纵光学声子耦合强度增加而减小。当有效束缚强度l0>0.3时,电子-体纵光学声子耦合强度的变化对量子点中弱耦合磁极化子的基态能量的影响变得显著。当有效束缚强度l0<0.3时,电子-体纵光学声子耦合强度的变化对基态能量影响很小。由于有效束缚强度与量子点受限强度的平方根成反比,所以量子点受限越强,基态能量、基态束缚能越大,电子一体纵光学声子耦合强度和磁场的变化对量子点的影响相对越小;当量子点受限变弱时,电子-声子耦合强度变化对量子点的影响变大,磁场对量子点的影响也变大,所以在量子点中,极化子对量子点的影响不容忽略。     

声子和杂质对三角束缚势量子点量子比特性质的影响

本文以含有类氢杂质的三角束缚势量子点为基础,应用Peker变分方法,电子与体纵光学声子强耦合的条件下得出了电子的基态和第一激发态的本征能量及基态和第一激发态的波函数,量子点中这样的二能级体系可作为一个量子比特。讨论了能量与库仑结合参数,耦合强度,受限长度以及极角的变化关系.     

声子和杂质对三角束缚势量子点量子比特性质的影响

本文以含有类氢杂质的三角束缚势量子点为基础,应用Pekar变分方法,电子与体纵光学声子强耦合的条件下得出了电子的基态和第一激发态的本征能量及基态和第一激发态的波函数,量子点中这样的二能级体系可作为一个量子比特.讨论了能量与库仑结合参数,耦合强度,受限长度以及极角的变化关系.     

尺寸分布对量子点激发态发光性质的影响

采用有效质量近似方法研究了量子点的激发态光致发光峰的展宽问题. 对尺寸不均匀分布下量子点各能级发光峰与平均尺寸量子点发光峰的能量偏差进行了计算，定性地描述了尺寸分布对量子点基态和激发态发光峰展宽的影响. 研究表明，量子点的高度、直径以及体积等不均匀分布使量子点具有不同的垂直、平面方向的量子束缚. 这两种量子限制的相互作用决定了量子点激发态发光峰的宽度相对于基态发光峰的大小. 在各种不同性质的尺寸分布下，量子点激发态发光峰的展宽有可能大于、等于或小于基态发光峰的展宽. 关键词： 量子点 尺寸分布 激发态     

半导体量子点中极化子的跃迁能量

研究了半导体量子点中极化子的激发态性质。采用Huybrechts线性组合算符和幺正变换方法,计算了量子点中极化子的振动频率、基态能量、第一激发态能量、由第一激发态向基态的跃迁能量和跃迁频率。分别讨论了电子-LO声子在强弱两种耦合情况下极化子的跃迁能量和跃迁频率。数值计算结果表明,跃迁能量ΔE和跃迁频率ω均随量子点有效受限长度l₀的增加而减少,且随电子-声子耦合强度α的增加而减少。     

Properties of Unsymmetrical Parabolic Confinement Potential Quantum Dot Qubit

On the condition of electric-LO phonon strong coupling in unsymmetrical parabolic confinement potential quantum dot （QD）, we obtain the eigenenergies of the ground state and the first-excited state, the eigenfunctions of the ground state, and the first-excited state by using variational method of Pekar type. This system in QD may be employed as a two-level quantum system-qubit. When the electron is in the superposition state of the ground state and the first-excited state, we obtain the time evolution of the electron density. The relations both the probability density of electron and the period of oscillation with the electron-LO-phonon coupling strength, the confinement strengths in the xy-plane and the z-direction are discussed.     

Properties of Unsymmetrical Parabolic Confinement Potential Quantum Dot Qubit

On the condition of electric-LO phonon strong coupling in unsymmetrical parabolic confinement potential quantum dot (QD), we obtain the eigenenergies of the ground state and the first-excited state, the eigenfunctions of the ground state, and the first-excited state by using variational method of Pekar type. This system in QD may be employed as a two-level quantum system-qubit. When the electron is in the superposition state of the ground state and the first-excited state, we obtain the time evolution of the electron density. The relations both the probability density of electron and the period of oscillation with the electron-LO-phonon coupling strength, the confinement strengths in the xy-plane and the z-direction are discussed.     

Polaron Effect of a Two Electron Parabolic Quantum Dot

Polaron induced double electron in a quantum dot is investigated using the exact diagonalization techniques and the compact density-matrix approach. The dependence of nonlinear optical processes on the incident photon energies and the polaronic effect are brought out. The linear, third order non-linear optical absorption coefficients and the refractive index changes of singlet and triplet states as a function of photon energy are obtained with and without the inclusion of polaronic effect. It is found that the geometrical confinement and the effect of polaron have great influence on the optical properties of dots.     

双电子平面量子点基态能量的计算

由于库仑作用,目前的研究还得不到双电子平面量子点基态波函数和基态能量的精确解析解.分别利用微扰法、精确对角化方法和变分法,计算双电子平面量子点的基态能量,与早期的无约束哈特利-福克研究结果比较,发现三参量的变分波函数是基态的极好表征.且能对多电子平面量子点的基态描述提供参考.     

Quantum Dot Heterostructures

Optical and Quantum Electronics -     

计及厚度下量子点量子比特的电磁场依赖性

在电子-体纵光学(Longitudinal optical,LO)声子强耦合条件下,采用LLP-Pekar型变分法推导出计及厚度下量子点中极化子的基态和第一激发态能量本征值和本征函数以及平均声子数的电磁场依赖性。在此基础上,以极化子的二能级结构为载体构造了量子点量子比特。数值计算结果表明:量子比特的振荡周期T_0随量子点厚度L的增加而增大,随磁场的回旋频率ωc、电场强度F和电声子耦合强度α的增加而减小。量子比特的概率密度︱Ψ(ρ,z,t)~2︱随电子横向坐标ρ的变化呈现"正态分布"并受到量子盘厚度L和有效半径R_0的强烈影响,随电子纵向坐标z、角坐标φ和时间t作周期性振荡变化。消相干时间τ随磁场的回旋频率ω_c、色散系数η和电子-声子耦合常数α的增加而增大,随电场强度F、量子点厚度L和有效半径R_0的增加而减小。量子点的厚度是量子点量子比特的一个重要参数,理论上可以通过设计不同的量子盘厚度并结合调节外加电磁场的强度,达到调控量子比特振荡周期、消相干时间大小的目的。     

Programmable Quantum Processor with Quantum Dot Qubits

The realization of controllable couplings between any two qubits and among any multiple qubits is the critical problem in building a programmable quantum processor(PQP). We present a design to implement these types of couplings in a double-dot molecule system, where all the qubits are connected directly with capacitors and the couplings between them are controlled via the voltage on the double-dot molecules. A general interaction Hamiltonian of n qubits is presented, from which we can derive the Hamiltonians for performing operations needed in building a PQP, such as gate operations between arbitrary two qubits and parallel coupling operations for multigroup qubits. The scheme is realizable with current technology.     

Influences of a Side-Coupled Triple Quantum Dot on Kondo Transport Through a Quantum Dot

Kondo transport properties through a Kondo-type quantum dot (QD) with a side-coupled triple-QD structure are systematically investigated by using the non-equilibrium Green's function method. We firstly derive the formulae of the current, the linear conductance, the transmission coefficient, and the local density of states. Then we carry out the analytical and numerical studies and some universal conductance properties are obtained. It is shown that the number of the conductance valleys is intrinsically determined by the side-coupled QDs and at most equal to the number of the QDs included in theside-coupled structure in the asymmetric limit. In the process of forming the conductance valleys, the side-coupled QD system plays the dominant role while the couplings between the Kondo-type QD and the side-coupled structure play the subsidiary and indispensable roles. To testify the validity of the universal conductance properties, another different kinds of side-coupled triple-QD structures are considered. It should be emphasized that these universal properties are applicable in understanding this kind of systems with arbitrary many-QD side structures.