铁磁/反铁磁双层膜中交换偏置

铁磁 /反铁磁交换偏置在巨磁电阻器件中具有重要的应用 ,引起了物理学及材料学等领域内广大科学家的浓厚兴趣。本文首先阐述了交换偏置的基本性质 ;然后简述了交换偏置的实验研究方法 ;最后 ,着重介绍了几种主要的理论模型。     

外应力场下铁磁/反铁磁双层膜系统中的交换偏置

采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的交换各向异性.本模型中铁磁层具有单轴磁晶各向异性和立方磁晶各向异性，而反铁磁层仅具有单轴磁晶各向异性，但其厚度趋于半无穷.理论上解析地给出了系统的等效交换偏置和钉扎角(它显示了反铁磁层对铁磁层磁化的钉扎作用)与外应力场之间的关系.数值计算表明：系统的等效交换偏置与外磁场的方向有关，而与其大小无关；然而外应力场的大小和方向均对系统的等效交换偏置有影响，其根源在于外应力场的大小和方向都影响着钉扎角. 关键词： 铁磁/反铁磁双层膜 交换偏置 钉扎角 应力场     

铁磁/反铁磁双层膜系统中交换各向异性及其厚度依赖性

研究铁磁/反铁磁双层膜系统中交换偏置场和矫顽场的冷却磁场依赖性.结果表明,随着冷却磁场的增加,交换偏置场由负值向正值转变.在转变点附近,矫顽场有-个特别的增强,并达到最大值.结果同相关实验-致.研究铁磁层和反铁磁层厚度对交换偏置场和矫顽场的影响.发现,正负交换偏置场和矫顽场随着铁磁层厚度的增大而减小,但随反铁磁层厚度的变化关系复杂.在正交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场增强,矫顽场减弱;在负交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场减弱,矫顽场增强.     

热效应在电流驱动反铁磁/铁磁交换偏置场翻转中的显著作用

电流驱动的面内交换偏置场翻转具有无需外磁场辅助、抗磁场干扰以及强磁各向异性等优势,受到广泛关注.然而,在纳米级厚度薄膜系统中,反铁磁/铁磁异质结的阻塞温度较低,同时电流脉冲会产生大量的焦耳热,理论上电流热效应对于交换偏置场翻转有着显著作用,但是其作用机制缺乏相关研究和验证.我们制备了一系列反铁磁IrMn厚度不同的Pt/IrMn/Py异质结,系统性地研究了热效应在电流翻转交换偏置场中的作用机制.结果表明,在毫秒级电流脉冲下,焦耳热能够使得器件升温至阻塞温度以上,解除反铁磁/铁磁界面的交换耦合,同时电流产生的奥斯特场和自旋轨道矩能够翻转铁磁磁矩,在降温过程中完成交换偏置场的翻转.并且,在翻转过程中,反铁磁/铁磁异质结的各向异性磁阻曲线呈现与温度相关的两步磁化翻转现象,分析表明该现象起源于交换偏置耦合与铁磁直接交换作用之间的竞争关系.本文的研究结果厘清了热效应在电流驱动交换偏置场翻转过程中的重要作用,有助于推动基于电控交换偏置场的自旋电子器件发展.     

铁磁/反铁磁/铁磁三层膜系统中反铁磁自旋结构及其交换各向异性

研究铁磁/反铁磁/铁磁三层膜中界面存在二次以及双二次交换耦合下反铁磁磁矩转动及其交换各向异性.结果表明,其反铁磁膜中的磁矩转动存在可逆"恢复行为"、不可逆"连续倒转行为"以及不可逆"中断倒转行为"三种情形,三种情形的出现强烈地依赖于两界面处的线性耦合和双二次耦合.钉扎界面的交换耦合与旋转界面的交换耦合相互竞争,当钉扎界面耦合占主导时,反铁磁磁矩发生可逆"恢复行为",系统出现交换偏置.在旋转界面耦合占主导情形下,其线性耦合与双二次耦合也相互竞争,分别导致反铁磁磁矩发生不可逆"连续倒转行为"和不可逆"中断倒转行为",系统都不出现交换偏置,但矫顽场都得以增强.相关结论为实验上观测的磁滞能耗以及界面垂直耦合提供了可能的解释.     

铁磁/反铁磁双层膜系统中的磁畴动力学行为

比较了铁磁单层膜与铁磁/反铁磁双层膜结构中的磁畴演化行为, 发现由于反铁磁层膜对铁磁层膜的耦合作用使得系统的磁畴壁厚度、 磁畴壁等效质量、磁畴壁移动速度等发生了改变, 系统的矫顽场增强, 并出现了交换偏置场. 文章具体研究了反铁磁层耦合作用下其磁畴壁厚度、 等效质量以及磁畴壁移动速度等与反铁磁层的净磁化、 磁各向异性、界面耦合强度以及温度等的关系; 并研究了其对铁磁/反铁磁双层膜中的交换偏置场、矫顽场的影响. 进而 从磁畴结构的形成及其演化上揭示了铁磁/反铁磁双 层膜中出现交换偏置以及矫顽场增加的物理机制.     

铁磁/反铁磁双层膜系统中的交换偏置及矫顽场的温度特性

提出了一个讨论铁磁／反铁磁双层膜中的交换偏置及矫顽场温度特性的物理模型，该模型，假设铁磁层为具有单畴各向异性的单畴膜而反铁磁层由许多相互独立具有多晶各向异性的颗粒组成，其温度依赖性主要来源于系统态的热不稳定，包括反铁磁颗粒易轴取向的热涨落和相关磁学量的温度依赖性等。计算结果表明其交换偏置随温度的增加非线性地减少而其矫顽场在体阻截温度处达极大值，且其体阻截温度随反铁磁颗粒粒径的增加而增加。我们的计算结果和相关实验结果一致，通过本的讨论，我们建议通过铁磁膜耦合上大粒径硬反铁磁颗粒膜可获得高交换偏置、低矫顽场且近独立于温度的相关磁学器件。     

非磁性掺杂下的铁磁/反铁磁系统中的交换偏置和矫顽场

采用Monte Carlo方法,分别讨论了在铁磁/反铁磁双层膜和铁磁/反铁磁单层混合膜中,掺入非磁性物质后,掺杂浓度对交换偏置以及矫顽场的影响.计算结果表明:随着掺杂浓度的增大,双层膜和单层膜交换偏置都有先增大后减小的现象,而其矫顽场则先减小后增大.在相同掺杂浓度下,对随机掺杂和规则掺杂两种不同掺杂方式的结果比较发现:铁磁/反铁磁双层膜中,规则掺杂下产生的交换偏置和矫顽场都得到了增强;对于单层混合膜,随机掺杂下的交换偏置更强,规则掺杂下的矫顽场更大.研究发现对于双层膜规则掺杂可明显地导致其磁滞回线的不对称性,说明铁磁/反铁磁系统中磁滞回线的不对称性与界面自旋微结构密切相关.     

铁磁球/反铁磁纳米体系磁滞回线的Monte Carlo模拟

利用经典Heisenberg模型和Monte Carlo方法研究外磁场和反铁磁磁晶各向异性、交换相互作用对铁磁球均匀嵌入到反铁磁基体中的铁磁/反铁磁纳米体系磁滞回线的影响.模拟结果显示,外加反向最大磁场不同时,磁滞回线形状不同.当磁场正向增加时,体系的磁化强度会产生一个跃变,但跃变高度与反向场最大值无关.反铁磁磁晶各向异性越大,体系的交换偏置现象越明显,且磁化强度回到饱和值所需的外磁场越大.随着反铁磁基体交换相互作用的增大,在正向和负向磁场区域还可能出现新的磁滞现象.     

掺杂下铁磁/反铁磁双层膜中交换偏置的增强

采用了Monte-Carlo方法，讨论了反铁磁层中不同非磁性掺杂浓度下，铁磁/反铁磁双层膜中交换偏置的温度特性. 模拟结果显示：反铁磁层中非磁性掺杂能导致铁磁/反铁磁双层膜中交换偏置的增强. 同时，交换偏置随非磁性掺杂浓度的变化存在极大值，即同一温度下交换偏置随掺杂浓度的变化是非单调的. 并且，随着温度的升高交换偏置的最大值所对应的掺杂浓度向浓度低的方向移动. 它和Hong Jung-Il等人的实验结果完全一致. 究其原因在于反铁磁层相应的自旋排布、磁畴结构等随掺杂浓度的改变发生大的变化，当其正向磁畴和负向磁畴都形成连通的网络结构时，系统的交换偏置达最大. 比较了随机掺杂与规则掺杂的模拟结果. 模拟结果表明规则掺杂能够获得比随机掺杂更大的交换偏置，进一步表明了铁磁/反铁磁双层膜中交换偏置的特性与铁磁/反铁磁界面磁畴结构密切相关.     

Noise temperature distribution of superconducting hot electron bolometer mixers

We report on the investigation of optimal bias region of a wide-band superconducting hot electron bolometer(HEB)mixer in terms of noise temperature performance for multi-pixel heterodyne receiver application in the 5-meter Dome A Terahertz Explorer(DATE5) telescope. By evaluating the double sideband(DSB) receiver noise temperature(Trec) across a wide frequency range from 0.2 THz to 1.34 THz and with a large number of bias points, a broad optimal bias region has been observed, illustrating a good bias applicability for multipixel application since the performance of the HEB mixer is uniquely determined by each bias point. The noise temperature of the HEB mixer has been analyzed by calibrating the noise contribution of all RF components, whose transmissions have been measured by a time-domain spectroscopy. The corrected noise temperature distribution shows a frequency independence relation. The dependence of the optimal bias region on the bath temperature of the HEB mixer has also been investigated, the bath temperature has limited effect on the lowest receiver noise temperature until 7 K, however the optimal bias region deteriorates obviously with increasing bath temperature.     

Interface induced exchange bias effect in La0.67Sr0.33MnO3/SrIrO3 multilayer

Epitaxial superlattices of ferromagnetic/paramagnetic La_0.67Sr_0.33MnO₃/SrIrO₃ materials have been prepared on SrTiO₃ (100) substrate using pulse laser deposition technique. An unexpected onset of interface magnetic interaction has been observed around 40 K. Interestingly, magnetic exchange bias effect has been observed in both field cooled and zero field cooled magnetization loops, however, the shifting of loop is opposite in both measurements. Exchange bias field vanishes as temperature increases to interface magnetic ordering temperature. Moreover, exchange bias field is found to decrease with increasing cooling field. We believe that tuning of magnetic exchange at interface during field cooling induces this evolution in nature of exchange bias field.     

I–V characterization of a quantum well infrared photodetector with stepped and graded barriers

I–V characterization of an n-type quantum well infrared photodetector which consists of stepped and graded barriers has been done under dark at temperatures between 20–300 K. Different current transport mechanisms and transition between them have been observed at temperature around 47 K. Activation energies of the electrons at various bias voltages have been obtained from the temperature dependent I–V measurements. Activation energy at zero bias has been calculated by extrapolating the bias dependence of the activation energies. Ground state energies and barrier heights of the four different quantum wells have been calculated by using an iterative technique, which depends on experimentally obtained activation energy. Ground state energies also have been calculated with transfer matrix technique and compared with iteration results. Incorporating the effect of high electron density induced electron exchange interaction on ground state energies; more consistent results with theoretical transfer matrix calculations have been obtained.     

The exchange bias in MnPd/Co1−xFex bilayers

A systematic study of exchange bias in MnPd/Co and MnPd/Co_1−xFe_x bilayers has been carried out. Very large unidirectional anisotropy constant of 2.2 erg/cm² and the appearance of double-shifted loops, ascribed to the coexistence of positive and negative exchange bias, have been observed. The dependence of exchange bias, unidirectional anisotropy constant and coercivity on thickness, temperature, annealing regime and Fe content has been investigated and discussed.     

Organic film thickness influence on the bias stress instability in?sexithiophene field effect transistors

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 to 130 nm on Si/SiO₂ substrates. After the T6 film structural analysis by X-ray diffraction and the FET electrical investigation focused on carrier mobility evaluation, bias stress instability parameters have been estimated and discussed in the context of existing models. By increasing the film thickness, a clear correlation between the stress parameters and the structural properties of the organic layer has been highlighted. Conversely, the mobility values as a result are found to be almost thickness independent.     

Out-of-plane exchange bias and magnetic anisotropy in MnPd/Co multilayers

Magnetic and structural properties in [MnPd/Co]₁₀ multilayers deposited onto Si(1 1 1) substrates have been investigated. The dependences of anisotropy and exchange bias on the thicknesses of both MnPd and Co layers have been studied. In most of the samples, the out-of-plane magnetic anisotropy and both large out-of-plane and in-plane exchange biases have been observed at cryogenic temperature below the blocking temperature T_B≈240 K. With appropriate MnPd and Co thicknesses, we have obtained samples with a large out-of-plane exchange bias along with a large out-of-plane magnetic anisotropy. The origin of the out-of-plane magnetic anisotropy in the samples has been suggested to be due to the formation of CoPd interfacial alloys which have tensile in-plane strains, while the spin structure of the antiferromagnetic layer at the interface which is believed to be responsible for exchange bias may be the same as that of the bulk material. Also, the present study shows that the interplay between the out-of-plane magnetic anisotropy and exchange bias is evident in our multilayers and plays an important role in the out-of-plane exchange-bias mechanism.     

利用电光强度调制器频移特性实现可调延迟

针对光纤通信系统中数据同步处理时对脉冲可调延迟的要求,提出了一种可调延迟器的结构设计方案。对电光强度调制器(EOIM)的光频移特性进行了研究,基于EOIM对各级边带和强度的调制作用,利用EOIM对受激布里渊散射慢光装置中的泵浦光进行强度调节,从而实现延迟量可调。建立了可调延迟的数学模型,通过实验研究分别得出了在一定微波调制功率下EOIM调制深度和直流偏置电压随脉冲延迟量的变化关系。从实验结果中可以看出:在引起失真的主要因素为零的情况下,当直流偏置电压为半波电压的1/2时,脉冲相对群延迟随调制深度的增大逐渐减小;当调制深度为1.39时,脉冲相对群延迟随直流偏置电压的增大逐渐增大,延迟量最大可达到未调制情况下的1.106倍,实现了较大范围的延迟量调节。     

Magnetic anisotropy in IrMn/Co structures with an alternative sequence of deposition of antiferromagnetic and ferromagnetic layers

The preparation conditions and the magnitudes of the uniaxial and unidirectional magnetic anisotropies of IrMn/Co structures with an alternative sequence of deposition of antiferromagnetic and ferromagnetic layers upon heat treatment and cooling in an external magnetic field have been investigated. It has been revealed that the unidirectional anisotropy (exchange bias) arises in the structure with an antiferromagnetic layer deposited on a ferromagnetic layer (TS structure) at an annealing temperature of higher than 100°C. In structures with a ferromagnetic layer deposited on an antiferromagnetic layer (BS structure), the exchange bias does not arise in the annealing temperature range under investigation. The possible factors responsible for this effect and the ratio between the temperature of the appearance of the exchange bias and the Néel temperature have been discussed.     

垂直布洛赫线在畴段畴壁中的形成和消失

在不同的直流偏场下,对脉冲偏场作用后的磁泡膜中的磁畴观测结果表明:磁泡膨胀时的分枝生长往往伴随有大量垂直布洛赫线(以下称VBL)产生;它的正负与反向畴膨胀时所施加的直流偏场大小有确定关系;在幅度不太高的系列脉冲作用下畴端运动可使畴壁中形成大量VBL;足够强的脉冲偏场可使VBL消失。 关键词：