Chemically active substitutional nitrogen impurity in carbon nanotubes

We investigate the nitrogen substitutional impurity in semiconducting zigzag and metallic armchair single-wall carbon nanotubes using ab initio density functional theory. At low concentrations (less than 1 at. %), the defect state in a semiconducting tube becomes spatially localized and develops a flat energy level in the band gap. Such a localized state makes the impurity site chemically and electronically active. We find that if two neighboring tubes have their impurities facing one another, an intertube covalent bond forms. This finding opens an intriguing possibility for tunnel junctions, as well as the functionalization of suitably doped carbon nanotubes by selectively forming chemical bonds with ligands at the impurity site. If the intertube bond density is high enough, a highly packed bundle of interlinked single-wall nanotubes can form.     

曲率效应对超小碳纳米管电子性质的影响

在考虑曲率效应的情况下,在螺旋坐标系下解析地推导了非手性的碳纳米管(SWNTs)(包括扶手椅型和锯齿型)的能量色散关系,并分析了曲率效应对超小扶手椅型SWNTs的能带、能隙和导电能力及其对超小锯齿型SWNTs(包括扶手椅型和锯齿型)的能隙的影响.     

Doping effects on metallic and semiconductor single-wall carbon nanotubes

In this paper we investigate nitrogen- and boron-doped zigzag and armchair single-wall carbon nanotubes (SWNTs) with theoretical models based on the density functional theory. We take into account nitrogen and boron doping for two isomers in which substitutive atoms are on opposite sides of the tube, but only in one isomer the impurity sites are symmetrical with respect to the diameter. The band structures show a strong hybridization with impurity orbitals that change the original band structure. Although the two isomers of armchair SWNT exhibit the same formation energy, their band structures are different. Indeed asymmetrical isomers are gapless and exhibit a crossing of valence and conduction bands at k?=?π/c, leading to metallic SWNTs. Band structures of symmetrical isomers, on the other hand, exhibit an energy gap of 0.4?eV between completely filled valence and empty conduction bands. We use density of charge in order to understand this difference. In zigzag SWNT an impurity band is introduced in the energy gap and for N doping this band is just partially occupied in such a way that the electronic behaviour is reversed from semiconductor to metallic. Whereas for a given isomer armchair SWNT shows similar behaviours of N- and B-doped structures, B-doped zigzag SWNTs present different band structure and occupation compared to the N-doped case.     

管长和管径对单壁碳纳米管电导的影响

基于紧束缚模型，发展转移矩阵方法研究了单壁碳纳米管的导电性质.研究表明，由于卷曲效应，锯齿型(3k,0)管(k为整数)出现窄的电导沟，其大小与能隙一致.在费米能附近，电子输运不仅与管径和管长紧密相关，而且电子在不同能量下可能出现弹道的、扩散的和经典的三种不同输运特征. 关键词： 碳纳米管 转移矩阵 电导     

单壁纳米管的弹性性质

基于第一性原理计算了一系列单壁碳纳米管(椅型、锯齿型)和氮化硼锯齿型纳米管的杨氏模量.用实际的数值结果显示了杨氏模量与纳米管管径之间的依赖关系.还讨论了各类纳米管卷曲形变能以及平衡基矢长度a随管型的变化. 关键词： 单壁纳米管 平衡基矢长度 杨氏模量 形变能     

Peierls相变与磁场中碳纳米管的场发射

应用紧束缚模型和WKB方法研究碳纳米管的out-of-plane型Peierls相变,及其对碳纳米管的场发射的影响.结果发现Peierls相变会在室温出现,并使碳纳米管费米面附近出现能隙,导致碳纳米管发生金属—半导体转变,从而抑制碳纳米管的场发射.磁场也会抑制Peierls形变,Peierls相变和磁场相互竞争影响碳纳米管的能带结构,从而影响碳纳米管的场发射. 关键词： 场发射 碳纳米管 Peierls相变     

Excitons in optical spectra of boron-nitride (BN) nanotubes

Exciton effects are studied in single-wall boron-nitride nanotubes. The Coulomb interaction dependence of the band gap, the optical gap, and the binding energy of excitons are discussed. The optical gap of the (5,0) nanotube is about 6 eV at the on-site interaction U=2t with the hopping integral t=1.1 eV. The binding energy of the exciton is 0.50 eV for these parameters. This energy agrees well with that of other theoretical investigations. We find that the energy gap and the binding energy are almost independent of the geometries of nanotubes. This novel property is in contrast with that of the carbon nanotubes, which show metallic and semiconducting properties depending on the chiralities.     

单空位缺陷对石墨纳米带电子结构和输运性质的影响

基于第一性原理电子结构和输运性质计算,研究了单空位缺陷对单层石墨纳米带(包括zigzag型和armchair型带)电子性质的影响.研究发现,单空位缺陷使石墨纳米带在费米面上出现一平直的缺陷态能带;单空位缺陷的引入使zigzag型半导体性的石墨纳米带变为金属性,这在能带工程中有重要的应用价值;奇数宽度的armchair型石墨纳米带表现出金属特性,有着很好的导电性能,同时,偶数宽度的armchair型石墨带虽有金属性的能带结构,但却有类似半导体的伏安特性;单空位缺陷使得奇数宽度的armchair石墨纳米带导电 关键词： 石墨纳米带 单空位缺陷 电子结构 输运性质     

Influencing range of vacancy defects in zigzag single-walled carbon nanotubes

The influencing range of a vacancy defect in a zigzag single-walled nanotube is characterized with both structural deformation and variation in bandstructure. This paper proposes a microscopic explanation to relate the structural deformation to the bandstructure variation. With an increasing defect density, the nanotubes become oblate and the energy gap between the deep localized gap state and the conducting band minimum state decreases. Theoretical results shed some light on the local energy gap engineering via vacancy density for future potential applications.     

Reentrant semiconducting behavior of zigzag carbon nanotubes at substitutional doping by oxygen dimers

The electronic structures of carbon nanotubes doped with oxygen dimers are studied using the ab initio pseudopotential density functional method. The fundamental energy gap of zigzag semiconducting nanotubes exhibits a strong dependence on both the concentration and configuration of oxygen-dimer defects that substitute for carbon atoms in the tubes and on the tube chiral index. For a certain type of zigzag nanotube when doped with oxygen dimers, the energy gap is closed and the tube becomes semimetallic. At higher oxygen-dimer concentrations the gap reopens, and the tube exhibits semiconducting behavior again. The change of the band gap of the zigzag tube is understood in terms of their response to the strains caused by the dimer substitutional doping.     

Phonon softening in metallic nanotubes by a Peierls-like mechanism

The radial dependency of the vibrational frequencies of single-wall carbon nanotubes in the G band (1500-1600 cm(-1)) is studied by density functional theory. In metallic nanotubes, a mode with A1 symmetry is found to be significantly softer than the corresponding mode in insulating tubes or graphite. The mechanism that leads to the mode softening is explored. It is reminiscent of the driving force inducing Peierls distortions. At ambient temperature, the energy gained by opening the gap is, however, not sufficient for a static lattice distortion. Instead the corresponding vibrational frequency is lowered.     

Effective Masses for Zigzag Nanotubes in Magnetic Fields

We consider the Schrödinger operator with a periodic potential on quasi-1D models of zigzag single-wall carbon nanotubes in magnetic field. The spectrum of this operator consists of an absolutely continuous part (intervals separated by gaps) plus an infinite number of eigenvalues with infinite multiplicity. We obtain identities and a priori estimates in terms of effective masses and gap lengths.     

Optical transitions in single-wall boron nitride nanotubes

Optical transitions in single-wall boron nitride nanotubes are investigated by means of optical absorption spectroscopy. Three absorption lines are observed. Two of them (at 4.45 and 5.5 eV) result from the quantification involved by the rolling up of the hexagonal boron nitride (h-BN) sheet. The nature of these lines is discussed, and two interpretations are proposed. A comparison with single-wall carbon nanotubes leads one to interpret these lines as transitions between pairs of van Hove singularities in the one-dimensional density of states of boron nitride single-wall nanotubes. But the confinement energy due to the rolling up of the h-BN sheet cannot explain a gap width of the boron nitride nanotubes below the h-BN gap. The low energy line is then attributed to the existence of a Frenkel exciton with a binding energy in the 1 eV range.     

Transition from a Tomonaga-Luttinger liquid to a fermi liquid in potassium-intercalated bundles of single-wall carbon nanotubes

We report on the first direct observation of a transition from a Tomonaga-Luttinger liquid to a Fermi-liquid behavior in potassium-intercalated mats of single-wall carbon nanotubes. Using high resolution photoemission spectroscopy, an analysis of the spectral shape near the Fermi level reveals a Tomonaga-Luttinger liquid power law scaling in the density of states for the pristine sample and for low dopant concentration. As soon as the doping is high enough to achieve a filling of the conduction bands of the semiconducting tubes, a distinct transition to metallic single-wall carbon nanotube bundles with the scaling behavior of a normal Fermi liquid occurs.     

Width dependent structural and electrical properties of zigzag ZnTe nanoribbons

We carry out density functional theory based investigation to understand the structural and electrical properties such as atomic structure, edge energy, band gap, and work function of zigzag ZnTe nanoribbons. It is found that the zigzag nanoribbons may be stabilized by passivating the edge atoms with Hydrogen, Oxygen or Fluorine atoms. Our study reflects that zigzag ZnTe nanoribbons with smaller width behave like semiconductor. However, they exhibit a transition from semiconducting phase to a metallic phase as width increases. A wide variation of band gap is obtained with respect to the choice of edge passivating elements. Work functions of all the nanoribbons are also estimated in order to assess the utility of these nanoribbons in various field emission devices.     

单壁碳纳米管能带及其电子特性研究

从能带理论出发,采用电子紧束缚能量色散关系,推导锯齿,扶手椅和手性单壁碳纳米管(SWCNT)的电子能带结构表达式,指出单壁碳纳米管或为金属或为半导体的判据。结果表示:单壁碳纳米管的电子结构与其几何结构密切相关,如扶手椅型单壁碳纳米管是金属性的,而对其它类型的单壁碳纳米管是与碳纳米管的手性指数有关,只有手性指数n和m的差别等于3的倍数时,单壁碳纳米管是金属性的,否则会显出有带隙的半导体特性。这意味着单壁碳纳米管是由特殊的电子传输和光学性质,在纳米电子学领域具有巨大的潜在应用价值。     

Low-energy electronic properties of pairs of identical carbon nanotubes

The tight-binding model is employed to study the low-energy electronic properties of aligned pairs of identical single-wall carbon nanotubes with the intertube interactions. The rotational symmetry about the tube axes is totally broken, and the intertube interactions hybridize the atomic states on each tube to create new sub-bands. Sub-band spacing, sub-band curvature, band-edge states, and energy gaps are sensitive to stacking types and are also dependent on the radius and the chirality of the tubes. The systems could be metal, semimetal, or semiconductor depending on their stacking types. In particular, an armchair pair keeps the band structures linear like a single tube if the pair has a glide symmetry with respect to the plane between its constituent tubes. Breaking this symmetry makes the pair semimetallic or semiconducting. However, there are no such properties for chiral and zigzag pairs. The variations in electronic structures of these pairs are more complicated and more sensitive to the tube radii. Instead of being like a rope or a large bundle, the stacking-type dependent behavior is more similar to commensurate double-wall carbon nanotubes.     

Carbon nanotubes as building blocks of quantum dots

Quantum dots have been fabricated with single-wall carbon nanotubes (SWCNTs), and their transport properties have been measured at low temperatures. The single-electron transport measurements revealed the artificial atom characteristics with a shell structure and the Zeeman splitting of single particle states. They have been observed with the metallic SWCNT that includes many electrons, in striking contrast to the case of semiconductor artificial atoms that have a few electrons. The unique features in the SWCNT artificial atom are discussed in terms of the energy scales associated with the quantum dot.     

锯齿型碳纳米管的结构衍生及电子特性

利用密度泛函理论研究锯齿型单、双壁碳纳米管从核到管状团簇直至纳米管的逐层结构衍生.研究结果表明五边形结构在管状团簇生长中发挥关键作用.此外,基于管状团簇的研究,运用周期性边界条件得到锯齿型单、双壁碳纳米管,并通过计算能带和态密度研究其电子特性.对单壁(n,0)和双壁(n,0)@(2n,0)碳纳米管,当n=3q(q为整数)时,具有金属或窄带隙半导体特性;n?=3q时,具有较宽带隙半导体特性,且带隙随管径的增加而减小.然而,小管径碳纳米管受曲率效应的明显影响,n?=3q的(4,0),(4,0)@(8,0)和(5,0)@(10,0)均呈现金属性;n=3q的(6,0)@(12,0)则表现出明显的半导体特性.     

Effects of various defects on the electronic properties of single-walled carbon nanotubes: A first principle study

The geometries,formationenergies and electronic band structures of （8, 0） and （14, 0） singlewailed carbon nanotubes （SWCNTs） with various defects, inehlding vaeaney, Stone-Wales defect, and octagon pentagon pair defect, have been investigated within the framework of the density- huictional theory （DFT）, and the influence of the concentration within the same style of deflect on the physical and chenfical properties of SWCNTs is also studied. The results suggest that the existeilcc of vacancy and octagon-pentagon pair deflect both reduce the band gap, whereas the SW- defect induces a band gap opening in CNTs. More int, erestingly, the band gaps of （8, 0） and （14, 0） SWCNTs eonfigurations with two octagon pentagon pair defect presents 0.517 eV and 0.163/eV, which arc a little smaller than the perfectt CNTs. Furthermore, with the concentration of defects increasing, there is a decreasing of band ga.p making the two types of SWCNTs change from a semiconductor to a metallic conductor.