高频电压下交联聚乙烯电缆绝缘中电树枝生长的动力学模型

针对高压交联聚乙烯电缆绝缘试样,在1000—2000Hz 10kV峰值正弦电压下,采用计算机实时显微数字摄像技术进行了电树枝培养实验.基于半结晶绝缘材料中电树枝生长机理和电树枝结构的分形特征,提出了一个在高频范围定量预测电应力驱动下交联聚乙烯电缆绝缘中电树枝生长特性的动力学模型,获得了电树枝生长率方程和从电树枝生长到击穿过程的寿命公式.将该模型预测值与实验中获得的电树枝生长规律实验数据进行比较,其结果有较好的一致性,表明提出的模型化方法可以应用到交联聚乙烯电缆绝缘中电树枝老化规律的定量分析研究中. 关键词： 交联聚乙烯电缆绝缘 电树枝 施压频率 动力学模型     

Influence of antioxidants on electrical conduction in LDPE and XLPE

In order to study the effect of antioxidants on high-field electrical conduction of cross-linked polyethylene (XLPE), measurements were made of conduction currents flowing in XLPE specimens containing phenolic and sulfur-type antioxidants. Currents flowing in XLPE insulation containing these antioxidants were found to be less than those flowing in XLPE containing no antioxidants. The smallest detected current occurred in XLPE insulation containing the sulfur-type antioxidant dilauryl thiodipropionate, whereas larger currents were detected in XLPE containing phenolic antioxidants. It was also found that the magnitude of conduction current in XLPE samples containing the sulfur-type antioxidant depended on the concentration of the added antioxidant. The degree of measured crystallinity of XLPE was also found to be less than that of low-density polyethylene (LDPE), while the crystallinity was not found to be influenced by added antioxidants.     

发展在XLPE电缆绝缘内外侧的电树枝

以XLPE高压电力电缆内外侧绝缘中的电树枝特性为研究对象，通过分析电树枝引发与生长的统计实验规律和采用扫描电子显微镜分析发现，由于不同结晶状态的影响，电缆绝缘内外侧的电树枝特性存在很大的差异.引发于绝缘内侧电树枝引发时间短、生长速度快、电树枝形状具有多样性；起始于绝缘外侧的电树枝不仅引发时间长、生长速度极慢，而且电树枝形状(结构)比较单一.并对这两个位置电树枝的引发和生长机理进行了探讨. 关键词： 电树枝 结晶状态 统计规律 内侧和外侧绝缘层     

Numerical minimization of AC losses in coaxial coated conductor cables

Power cables are one of the most promising applications for the superconducting coated conductors. In the AC use, only small resistive loss is generated, but the removal of the dissipated heat from the cryostat is inefficient due to the large temperature difference. The aim of this work is to minimize the AC losses in a multilayer coaxial cable, in which the tapes form current carrying cylinders. The optimized parameters are the tape numbers and lay angles in these cylinders. This work shows how to cope with the mechanical constraints for the lay angles and discrete tape number in optimization. Three common types of coaxial cables are studied here to demonstrate the feasibility of optimization, in which the AC losses were computed with a circuit analysis model formulated here for arbitrary phase currents, number of phases, and layers. Because the current sharing is practically determined by the inductances of the layers, the optima were obtained much faster by neglecting the nonlinear resistances caused by the AC losses. In addition, the example calculations show that the optimal cable structure do not usually depend on the AC loss model for the individual tapes. On the other hand, depending on the cable type, the losses of the optimized cables may be sensitive to the lay angles, and therefore, we recommend to study the sensitivity for the new cable designs individually.     

交联聚乙烯电缆绝缘材料中电树枝的导电特性研究

利用光学显微观察、局部放电测量和共聚焦Raman光谱分析相结合的方法, 研究了交联聚乙烯(XLPE)电缆绝缘材料中两种典型电树枝的导电特性.尽管具有相似的培养条件, 两种电树枝却呈现出完全不同的形态,其中9 kV下典型电树枝为枝-松枝状, 11 kV下为枝状, 而且电树枝生长及局部放电规律呈现出明显的差异.枝-松枝状电树枝主干通道内存在无序石墨碳的沉积, 根据石墨碳G带与D带的相对强度,估算碳层厚度约为8 nm,树枝通道单位长度电阻小于 10 Ω· μm^-1,足以抑制电树枝内局部放电的发展,电树枝呈现出导电型电树枝特征. 枝状电树枝通道内观察到荧光背景,存在材料劣化的产物,但不存在无序石墨碳的聚集, 通道具有明显的非导电特性而不足以抑制电树枝内局部放电的连续作用. 最后提出了XLPE电缆绝缘材料中导电型和非导电型电树枝的单通道生长模型, 利用等效电路理论对XLPE电缆绝缘材料中两种不同导电特性电树枝的生长机理进行了探讨.     

Influence of hydrogenation on electrical conductivity of vanadium dioxide thin films

The influence of hydrogenation on electrical conductivity of vanadium dioxide thin films has been investigated. It has been shown using measurements of the electrical conductivity that the hydrogenation of vanadium dioxide thin films leads to a decrease in the temperature of the phase transition from the tetragonal phase (with “metallic” conductivity) to the semiconducting monoclinic phase. It has been found that, upon doping of vanadium dioxide with hydrogen, the electrical conductivity of the monoclinic phase can increase by several orders of magnitude. Nonetheless, the temperature dependence of the electrical conductivity of hydrogenated films exhibits a typical semiconducting behavior in the temperature range where the monoclinic phase is stable.     

Electrical conductivity of nitride carbon films with different nitrogen content

The electrical conductivity of nitride carbon (DLC: N) films has been studied. It is found that the electrical conductivity of the deposited films increases slowly with increasing nitrogen content, however, it decreases after the nitrogen content in the film reaches a certain value of 12.8 at%. Thermal treatment results show that the electrical conductivity of the lowly nitrogen doped DLC film increases rapidly, while that of the heavily doped film decreases after annealing at 300 °C for 30 min. Raman and XPS spectra results show that when the nitrogen content in the films reaches a certain value, there appears nonconductive phases. Therefore the electrical conductivity of the heavily doped films decreases. FTIR spectra analysis results show that the nitrogen atom as an impurity center undergoes an ‘activation’ process during the thermal treatment, which leads to the increase of the electrical conductivity. Therefore, the nitrogen in these two kinds of films has different effects on the electrical conductivity.     

Electrical conduction of SnBi4Se7

Polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compounds in the quasi-binary system SnSe-Bi₂Se₃ were characterized by measurements of temperature and field dependence of electrical conductivity. The current density–electric field characteristics were found to be non-linear, especially when the applied electric field exceeds a certain value which is dependent on the temperature T. Furthermore, the electrical conductivity can be enhanced by the applied electric field. The characteristic length a(T) seemed to be enhanced with increasing temperature. Electrical conductivity measurements elucidated the semiconducting behaviour of both compounds, especially when the temperature of measurement exceeds a certain value for SnBi₄Se₇, and hopping and band type conduction are dominant at low and high ranges of temperature, respectively. Below 200 K, the electrical conductivity of SnBi₄Se₇ decreases with increasing temperature. Meanwhile, additional scattering and hopping seemed to characterize the behaviour of SnBi₄Se₇ due to the Sn doping of Bi₂Se₃ resulting in additional states at the Fermi level. PACS 72.20.-i; 72.15.-v     

Effect of tellurium on electrical and structural properties of sintered silicon nitride ceramics

The effects of tellurium (Te) additives on electrical conductivity, dielectric constant and structural properties of sintered silicon nitride ceramics have been studied. Different amounts of Te (10% and 20%) were added as sintering additives to silicon nitride ceramic powders and sintering was performed. Microstructure and composition were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The electrical conductivity and dielectric constant (ε′) increase exponentially with temperature greater than 800 K. The electrical conductivity and dielectric constant increase but activation energy decreases from 0.72 to 0.33 eV with the increase of Te concentration. However, the conductivity increases five orders of magnitude at the concentration of 10% of Te in Si₃N₄. As the Te concentration increases the sintered silicon nitride ceramics become denser. These types of samples can be used as high temperature semiconducting materials.     

Lightning-induced currents in buried coaxial cables: A frequency-domain approach and its validation using rocket-triggered lightning

The aim of this paper is to present an experimental validation of a frequency-domain approach to the solution of the lightning electromagnetic field-to-buried cable coupling equations. The coupling to the inner conductor is evaluated using the concept of cable transfer impedance. The theoretical model and relevant computer code are tested using experimental data on lightning-induced currents in buried cables carried out in 2002 and 2003 at the International Center for Lightning Research & Testing (ICLRT) at Camp Blanding, Florida where currents induced by triggered lightning events were measured at the ends of a buried coaxial cable, both in the shield and in the inner cable conductors. Reasonably good agreement has been found between numerical simulations and recorded waveforms. In particular, the early-time response of the cable and the peak value of the induced currents were generally well reproduced by the simulations.     

Electrical properties of ZnO stabilized beta″-alumina

The electrical conductivity of ZnO doped (1?5 wt%) beta″-alumina ceramic samples has been measured by the complex admittance method. The smallest value of electrical resistivity was in the case of the samples doped with 3 wt% ZnO. The bulk conductivity dependence (in lnσT?1/T coordinates) is characterized by two slopes, with a bend occuring at about 250°C. The low temperature activation energy of bulk conductivity is not influenced by the doping level. The high temperature activation energy decreases with increasing ZnO content. The change in the slope of the Arrhenius plot of the beta-alumina bulk conductivity is in agreement with what should be expected from Wang's model.     

Semiconductor-metal transition in selenium under shock compression

Phase transitions in selenium are studied by time-resolved measurements of the electrical conductivity under shock compression at a pressure of up to 32 GPa. The pressure dependence of the electrical conductivity (σ(P)) has two portions: a sharp increase at P < 21 GPa and a plateau at P > 21 GPa. The experimental data and the temperature estimates indicate that, at P < 21 GPa, selenium is in the semiconductor state. The energy gap of semiconducting selenium decreases substantially under compression. At P > 21 GPa, the electrical conductivity saturates at ～10⁴ Ω^?1 cm^?1. Such a high value of the electrical conductivity shows the effective semiconductor-metal transition taking place in shock-compressed selenium. Experiments with samples having different initial densities demonstrate the effect of temperature on the phase transition. For example, powdered selenium experiences the transition at a lower shock pressure than solid selenium. Comparison of the temperature estimates with the phase diagram of selenium shows that powdered selenium metallizes in a shock wave as a result of melting. The most plausible mechanism behind the shock-induced semiconductor-metal transition in solid selenium is melting or the transition in the solid phase. Under shock compression, the metallic phase arises without a noticeable time delay. After relief, the metallic phase persists for a time, delaying the reverse transition.     

Nondissipative Orbital Currents in Finite Quantum Systems: A Comparative Study

The idea of nondissipative, persistent currents in mesoscopic metallic or semiconducting rings and cyclinders appears counterintuitive, because it contradicts our experience with currents in macroscopic metals. On the other hand such orbital currents are well known properties of atoms. A comparative study of nondissipative ring currents in different finite quantum systems is therefore of interest. In this paper the properties of atoms, mesoscopic metallic or semiconducting rings and cylinders and elongated molecules called carbon nanotubes are discussed and compared.     

空间屏打孔多层隔热材料热计算模型

分析了空间屏打孔多层隔热材料中导热和辐射的复合传热问题,在一定假设的基础上,根据反射屏能量平衡方程,建立了反射屏稳态温度计算模型和投射辐射数值分析模型。结合AD I法,对两个方程组进行迭代求解,得到材料屏间投射辐射热流和反射屏的温度。将文中模型的预测结果与文献中实验值进行比较,验证了模型在工程上应用的可行性。同时分析了当量导热系数、各种热流以及内部温度分布随层密度的变化规律,对材料的优化设计具有积极的指导意义。     

110kV冷绝缘高温超导电缆在故障电流下的温度计算与分析

研究了110kV冷绝缘高温超导电缆失超时,故障电流的分流情况,并以此为依据,建立了电缆在故障电流下失超时,温升与时间关系的计算模型;通过MATLAB对计算模型进行了求解,并对求解结果进行了分析;计算出了电缆在不同故障电流下,温度上升到不同值所需要的时间,进一步明确了故障电流的大小对电缆温升的影响。     

常压烧结和高压合成Nd2-xCexCuO4的结构特征与导电性质

 本文在常压高温和高压高温条件下合成出了Nd_2-xCe_xCuO₄（x=0~0.20）系列样品，对比研究了两种不同条件下合成产物的结构特征与室温至液氮温区的导电性质。测试分析结果表明，高温高压（1.7 GPa，800 ℃，10 min）合成的样品与常压高温（1 000 ℃，10 h）烧结的样品具有相同的四方结构，但晶格常数随掺杂量变化有所不同，高压合成产物的c轴随掺杂量基本不变，而常压烧结样品c轴随掺杂量增加呈下降趋势。两种条件合成的样品在液氮温区均呈现出不同程度的半导体特征，经过一次高温淬火后处理后，高压样品的导电性质明显优于常压样品。实验结果表明，高压可以降低固相反应的合成温度，缩短反应时间，特别是高压的还原作用有利于产物导电性质的改善。     

Characterization of chemically deposited ZnSe/SnO2/glass films: Influence of annealing in Ar atmosphere on physical properties

The Zinc Selenide (ZnSe) thin films have been deposited on SnO₂/glass substrates by a simple and inexpensive chemical bath deposition (CBD). The structural, optical and electrical properties of ZnSe films have been characterized by X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), optical absorption spectroscopy, and four point probe techniques, respectively. The films have been subjected to different annealing temperature in Argon (Ar) atmosphere. An increase in annealing temperature does not cause a complete phase transformation whereas it affects the crystallite size, dislocation density and strain. The optical band gap (E_g) of the as-deposited film is estimated to be 3.08 eV and decreases with increasing annealing temperature down to 2.43 eV at 773 K. The as-deposited and annealed films show typical semiconducting behaviour, dρ/dT > 0. Interestingly, the films annealed at 373 K, 473 K, and 573 K show two distinct temperature dependent regions of electrical resistivity; exponential region at high temperature, linear region at low temperature. The temperature at which the transition takes place from exponential to linear region strongly depends on the annealing temperature.     

Room temperature synthesis and characterization of CdO nanowires by chemical bath deposition (CBD) method

A chemical synthesis process for the fabrication of CdO nanowires is described. In the present work, transparent and conductive CdO films were synthesized on the glass substrate using chemical bath deposition (CBD) at room temperature. These films were annealed in air at 623 K and characterized for the structural, morphological, optical and electrical properties were studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical and electrical resistivity. The XRD analysis showed that the as-deposited amorphous can be converted in to polycrystalline after annealing. Annealed CdO nanowires are 60-65 nm in diameter and length ranges typically from 2.5 to 3 μm. The optical properties revealed the presence of direct and indirect band gaps with energies 2.42 and 2.04 eV, respectively. Electrical resistivity measurement showed semiconducting behavior and thermoemf measurement showed n-type electrical conductivity.     

Electrical tree initiation in silicone rubber under DC and polarity reversal voltages

With the fast development of high voltage DC (HVDC) cable, cable insulation under DC conditions has got more attention. In this paper, tests were conducted to study the electrical tree initiation in silicone rubber (SIR) under DC and polarity reversal voltages. It is found that electrical tree initiation has significant polarity effects under both DC and polarity reversal voltages. There are only single-branch-like trees and branch-like trees under DC and polarity reversal voltages. As for pre-stressing effects under polarity reversal, the pre-stressing voltage has positive effects to electrical tree initiation, while the pre-stressing time has little influence. Space charge distribution of SIR under high electric field was studied with flat plate pulsed electro-acoustic (PEA) system, and their characteristics were discussed to explain this phenomenon. Moreover, different treeing breakdown phenomenon is found under polarity reversal voltage which differs from that under DC voltage. The existence of fast charges and slow charges gives reasonable explanation to it. Special attention should be paid to the transient situation like polarity reversal which would result in irreversible effects more easily, and affect true length of life for HVDC cables.     

Hopping and tunneling transport over a wide temperature range in chemically synthesized doped and undoped polypyrrole

Polypyrrole was synthesized by the chemical oxidation method in the presence of phosphoric acid by varying oxidant to monomer molar ratio for the optimization of electrical conductivity. The conductivity in doped polypyrrole reached up to a maximum value of 9.18 S/cm. Granular morphology was observed in chemically synthesized polypyrrole. Neutralization of doped polypyrrole was done with aqueous ammonium hydroxide and three orders of reduced conductivity were obtained in neutral polypyrrole. Doped and undoped samples of polypyrrole were then electrically characterized over a wide temperature range of 10–300 K. The measured electrical conductivity rises with the increase in temperature and shows the semiconducting nature of the material. Strong and weak temperature dependence of conductivity was revealed by undoped and doped polypyrrole samples respectively. An effort has been made to explore the electrical transport in doped and undoped polypyrrole by charge transport models. The experimental data obeys Kivelson’s hopping model in temperature range of 60–300 K and fluctuation assisted tunneling was the dominant conduction mechanism below 60 K.