Strong-coupling theory of two dimensional large bipolarons in elliptical quantum dots

In the limit of strong electron-phonon coupling, we analyze the stability of two dimensional bipolarons in a two-axis elliptic potential well of harmonic boundaries. The confined two-polaron wavefunction adopted here makes the electrons to form either a bipolaronic bound state or go into a composite state of two separated polarons bounded inside the same potential well. The methodology involves the mean polaron-polaron separation treated as an adjustable parameter to be determined variationally. By tuning the barrier slopes of the confining potential we obtain an explicit tracking of the criterion for bipolaron stability encompassing the particular cases of a two dimensional circular dot or a planar strip-like quantum well wire. We observe that, while an increased degree of confinement enhances bipolaronic stability, the effect of anisotropy is to inhibit bipolaron formation. Received 30 July 2001 and Received in final form 28 January 2002     

抛物量子点中弱耦合磁极化子的性质

应用线性组合算符和幺正变换方法研究了抛物量子点中磁极化子的基态性质。得出基态能和基态束缚能随有效束缚强度增大而减小,随回旋频率增大而增大。当有效柬缚强度给定,基态能量随电子-体纵光学声子耦合强度增加而减小。当有效束缚强度l0>0.3时,电子-体纵光学声子耦合强度的变化对量子点中弱耦合磁极化子的基态能量的影响变得显著。当有效束缚强度l0<0.3时,电子-体纵光学声子耦合强度的变化对基态能量影响很小。由于有效束缚强度与量子点受限强度的平方根成反比,所以量子点受限越强,基态能量、基态束缚能越大,电子一体纵光学声子耦合强度和磁场的变化对量子点的影响相对越小;当量子点受限变弱时,电子-声子耦合强度变化对量子点的影响变大,磁场对量子点的影响也变大,所以在量子点中,极化子对量子点的影响不容忽略。     

Electron cotunneling in a semiconductor quantum dot

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed.     

Charge-state conditional operation of a spin qubit

We report coherent operation of a singlet-triplet qubit controlled by the spatial arrangement of two confined electrons in an adjacent double quantum dot that is electrostatically coupled to the qubit. This four-dot system is the specific device geometry needed for two-qubit operations of a two-electron spin qubit. We extract the strength of the capacitive coupling between qubit and adjacent double quantum dot and show that the present geometry allows fast conditional gate operation, opening pathways toward implementation of a universal set of gates for singlet-triplet spin qubits.     

The ground state description of the Fröhlich polaron in a symmetric quantum dot within the framework of LLP-H approach

Within the framework of LLP-H method we have derived an analytical expression for the polaronic correction to the ground state energy and the effective mass of an electron confined in a symmetric quantum dot potential in polar semiconductor in both two and three dimensions. We have also calculated the number of phonons in the cloud of this bound polaron. We observe that polaronic correction is more pronounced in two dimension than that in three dimensional one and increases with the decrease in size of the quantum dot.     

库仑场对抛物量子点中强耦合极化子性质的影响

采用线性组合算符和幺正变换方法研究了在库仑场束缚下抛物量子点中强耦合束缚极化子的振动频率和基态能量。并对其进行了数值计算,结果表明:强耦合束缚极化子的振动频率和基态能量随量子点的有效受限长度的增加而减小,随电子-LO声子耦合强度的增加而增加,束缚极化子的基态能量随库仑势的增加而减小。     

抛物量子点中强耦合束缚极化子的性质

采用Pekar类型的变分方法研究了抛物量子点中强耦合束缚极化子的基态和激发态的性质。计算了束缚极化子的基态和激发态的能量、光学声子平均数。讨论了量子点的有效束缚强度和库仑束缚势对基态能量、激发态能量以及光学声子平均数的影响。数值计算结果表明:量子点中强耦合束缚极化子的基态和激发态能量及光学声子平均数均随量子点的有效束缚强度的增加而减小,基态、激发态能量随库仑束缚势的增加而减小,光学声子平均数随库仑束缚势的增加而增大。     

抛物量子点中弱耦合束缚极化子的相互作用能

研究了抛物量子点中弱耦合束缚极化子的性质,采用改进的线性组合算符和幺正变换方法导出了束缚极化子的振动频率、有效质量和相互作用能。讨论了量子点的有效受限长度、电子LO声子耦合强度和库仑场对抛物量子点中弱耦合极化子的振动频率、有效质量和相互作用能的影响。数值计算结果表明:弱耦合束缚极化子的振动频率和相互作用能随有效受限长度的减少而急剧增大,振动频率随库仑势以及电子LO声子耦合强度的增加而增加,而相互作用能随库仑势以及电子LO声子耦合强度的增加而减小。有效质量仅与电子LO声子耦合强度有关。     

A Negative Donor Center Trapped by a Spherical Quantum Dot

The properties of the low-lying states of a negative donor center trapped by a spherical quantum dot, which is subjected to a parabolic potential confinement, are investigated in the absence of magnetic field. The calculations have been performed by means of the exact diagonalization of the Hamiltonian matrix within the effective-mass approximation. We find that there is only one bound state the D^- center in a spherical parabolic quantum dot in the absence of magnetic field. The binding energy of the ground state is obtained as a function of the dot size. Moreover, the critical confined potential radius value at which the negative donor center changes from unbound to bound is obtained.     

Effect of the Electron—Phonon Coupling on Barrier D^— Quantum Dots in Magnetic Fields

The influence of the electron-phonon coupling of the energy of low-lying states of the barrier D^- center,which consists of a positive ion located on the z-azis at a distance from the two-dimensional quantum dot plane and two electrons in the dot plane bound by the ion,is investigated at arbitrary strength of maguetic field by mading use of the method of few-body physics.Discontinuous ground-state energy transitions induced by the magnetic field are reported.The dependence of the binding energy of the D^- ground state on the quantum dot radius is obtained.A considerable enhancement of the binding is found for the D^- ground state,which results from the confinement of electrons and electron-phonon coupling.     

Stark Effect of Polarons in Parabolic Quantum Wells

We report the study of Stark effect of polarons in infinite parabolic quantum wells under an electric field, taking into account the effects of interaction with bulk LO-phonons. The electron-phonon interaction and the.effective mass in the plane perpendicular to the growth direction for excited states of free polarons have been calculated as functions of the degree of confinement. The general behavior of the excited states is found to be in agreement with previous works on the ground state. It is shown that in the limit of strong confinement the differences in electron-phonon interaction and effective mass between the ground state and excited states vanish. Although the applied electric field has no effect on the electronphonon interaction or the effective mass of a free polaron system, our numerical results for an AlGaAs parabolic quantum well have demonstrated its significance in determining the coupling of electrons with bulk LO-phonons of bound polaron systems.     

Prediction of an excitonic ground state in InAs/InSb quantum dots

Using atomistic pseudopotential and configuration-interaction many-body calculations, we predict an excitonic ground state in the InAs/InSb quantum-dot system. For large dots, the conduction band minimum of the InAs dot lies below the valence band maximum of the InSb matrix. Due to quantum confinement, at a critical size calculated here for various shapes, the gap E(g) between InAs conduction states and InSb valence states vanishes. Strong electron-hole correlation effects are induced by the spatial proximity of the electron and hole wave functions, and by the lack of strong (exciton unbinding) screening, afforded by the existence of discrete 0D confined energy levels. These correlation effects overcome E(g), leading to the formation of a biexcitonic ground state (two electrons in InAs and two holes in InSb) being energetically more favorable (by approximately 15 meV) than the dot without excitons.     

纤锌矿In_(0.19)Ga_(0.81)N/GaN量子阱中光学声子和内建电场对束缚极化子结合能的影响

用改进的Lee-Low-Pines变分方法研究纤锌矿In0.19Ga0.81N/GaN量子阱结构中束缚极化子能量和结合能等问题,给出基态结合能、不同支长波光学声子对能量和结合能的贡献随阱宽和杂质中心位置变化的数值结果.在数值计算中包括了该体系中声子频率的各向异性和内建电场对能量和结合能的影响、以及电子和杂质中心与长波光学声子的相互作用.研究结果表明,In0.19Ga0.81N/GaN量子阱材料中光学声子和内建电场对束缚极化子能量和结合能的贡献很大,它们都引起能量和结合能降低.结合能随着阱宽的增大而单调减小,窄阱中减小的速度快,而宽阱中减小的速度慢.不同支声子对能量和结合能的贡献随着阱宽的变化规律不同.没有内建电场时,窄阱中,定域声子贡献小于界面和半空间声子贡献,而宽阱中,定域声子贡献大于界面和半空间声子贡献.有内建电场时,定域声子贡献变小,而界面和半空间声子贡献变大,声子总贡献也有明显变化.在In0.19Ga0.81N/GaN量子阱中,光学声子对束缚极化子能量和结合能的贡献比GaAs/Al0.19Ga0.81As量子阱中的相应贡献(约3.2—1.8和1.6—0.3 meV)约大一个数量级.阱宽(d=8 nm)不变时,在In0.19Ga0.81N/GaN量子阱中结合能随着杂质中心位置Z0的变大而减小,并减小的速度变快.随着Z0的增大,界面和半空间光学声子对结合能的贡献缓慢减小,而定域光学声子的贡献缓慢增大.     

抛物量子点中弱耦合磁极化子的振动频率和相互作用能

采用改进的线性组合算符和幺正变换方法研究磁场中抛物量子点弱耦合磁极化子的性质,导出抛物量子点中磁极化子的振动频率和相互作用能与磁场、受限强度和电子声子耦合强度的关系.对GaAs晶体进行数值计算,结果表明,量子点受限强度越大,量子点弱耦合磁极化子的振动频率和相互作用能越大.     

库仑场对非对称量子点中强耦合极化子声子平均数的影响

采用线性组合算符和幺正变换方法研究库仑场对非对称量子点中强耦合极化子振动频率和声子平均数的影响。导出量子点中强耦合束缚极化子振动频率和声子平均数随量子点的横向和纵向有效受限长度,库仑束缚势和电子-声子耦合强度的变化关系。数值计算结果表明:非对称量子点中强耦合束缚极化子的振动频率和声子平均数随量子点的横向和纵向有效受限长度的减小而迅速增大。随库仑束缚势和电子-声子耦合强度的增加而增大。     

量子线中强耦合极化子的温度效应

采用Tokuda改进的线性组合算符法和有效质量下的变分法,研究在抛物势作用下,同时考虑电子与LO声子相互作用时,温度对量子线中强耦合极化子特性的影响。对RbCl晶体所作的数值计算结果表明,量子线中强耦合极化子的基态能量、平均数和光学声子平均数均随温度的升高而增加。     

Intersublevel transitions in self-assembled quantum dots

Intersublevel transitions in semiconductor quantum dots are transitions of a charge carrier between quantum dot confined states. In InAs/GaAs self-assembled quantum dots, optically active intersublevel transitions occur in the mid-infrared spectral range. These transitions can provide a new insight on the physics of semiconductor quantum dots and offer new opportunities to develop mid-infrared devices. A key feature characterizing intersublevel transitions is the coupling of the confined carriers to phonons. We show that the effect of the strong coupling regime for the electron–optical phonon interaction and the formation of mixed electron–phonon quasi-particles called polarons drastically affect and control the dynamical properties of quantum dots. The engineering of quantum dot relaxation rates through phonon coupling opens the route to the realization of new devices like mid-infrared polaron lasers. We finally show that the measurement of intersublevel absorption is not limited to quantum dot ensembles and that the intersublevel ultrasmall absorption of a single quantum dot can be measured with a nanometer scale resolution by using phonon emission as a signature of the absorption. To cite this article: P. Boucaud et al., C. R. Physique 9 (2008).     

束缚磁极化子的性质

采用线性组合算符和幺正变换方法分别导出弱、强耦合情形下束缚磁极化子的振动频率和基态能量.结果表明库仑场的存在使得磁极化子的基态能量的绝对值变小.     

Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots

We explore the Coulomb binding of electrons to holes confined to type-II GaSb self-assembled quantum dots. We demonstrate that at low laser power electrons are more weakly bound to holes trapped by the dots than to holes in the wetting layer. On the other hand, at high laser power the hydrogenic binding energy of dot excitons increases by more than a factor of two, and so exceeds that of wetting layer excitons. We attribute this to the strong binding of ‘core’ electrons to dots that are highly charged with holes by optical pumping.     

Properties of nonadiabatic quantum fluctuations of the strongly coupled electron-phonon systems

A new variational-ansatz of states of electrons and phonons was proposed on the basis of the Holstein model in strongly coupled electron-phonon systems for studying the influence of nonadiabatic phonon fluctuation, arising from the motion and density fluctuation of electrons, on the properties of ground state, uncertainty relation, stability of polarons, charge density wave (CDW) and phonon staggered ordering. The new ansatz represents the correlation among the displacement and squeezing states of phonons and polaron’s state of electrons as well as the squeezing-antisqueezing effect. The correlation and squeezing-antisqueezing effect result in the decrease of ground state energy, enhancement of stability of the systems, increase of binding energy of the polarons, weakening of the growing speed of polaron narrowing of the electron band, increase of the charge density wave order and suppression of the increased tendency of anomalous quantum fluctuation of the phonons in such a case, when compared with the uncorrelated case in the systems. The results obtained show that the ground state determined by the new state ansatz is most stable, thus the new ansatz describing the properties of the coupled electron phonon systems is very relevant and available, especially in strongly coupled and largely squeezed cases. Supported by the National “973” Project of China (Grant No. 2007CB6103)