利用韧致辐射诊断激光等离子体相互作用产生的超热电子

超短脉冲强激光与等离子体相互作用时产生的向靶内传输的超热电子在“快点火”方案中起着极其重要的作用.对于这部分向靶内传输的超热电子，韧致辐射方法是一种能有效、全面获得超热电子各方面信息的诊断方法.通过三维蒙特卡罗程序MCNP模拟了超热电子在靶材料中的输运以及它们在靶后方向产生的韧致辐射的性质，论证了韧致辐射诊断方法的可行性. 关键词： 超热电子 韧致辐射 诊断 MCNP程序     

利用轫致辐射谱回推超热电子温度

超短超强激光打靶产生的超热电子与固体靶相互作用时会产生轫致辐射X射线。利用蒙特卡罗方法,对电子在固体靶中传输产生的轫致辐射X射线进行了模拟。1 MeV电子束与固体靶作用产生的轫致辐射谱模拟结果表明,轫致辐射谱高能段斜率受靶厚度及靶材料的影响不明显。麦克斯韦分布的电子束及单能电子束与30 m铜靶作用的模拟结果显示,两种电子源产生的轫致辐射谱在电子束能量或温度较高时基本一致。给出了一种利用轫致辐射谱斜率反推超热电子温度的定标方法。模拟了不同温度下超热电子产生的轫致辐射光子的能量角分布及光子数角分布,结果显示辐射光子能量通量和光子数随着电子温度的提高越来越向前倾,并给出了另外一种由轫致辐射能量角分布反推超热电子温度的定标关系。     

拍瓦激光与铜靶作用产生光核中子的数值模拟研究

激光驱动中子源由于中子通量高、短脉冲等特点受到广泛关注。通过辐射流体动力学、粒子动力学和蒙特卡罗三种数值模拟程序的组合使用,对超短强激光与铜靶作用产生光核中子进行了全物理过程模拟。首先使用辐射流体动力学程序获得激光预脉冲产生的预等离子体密度分布,然后将预等离子体输入粒子动力学程序获得超短强激光主脉冲产生的超热电子信息,最后将超热电子输入蒙特卡罗程序得到光核中子。模拟获得了光核中子的产额、能谱和角分布信息,发现采用强度1022 W/cm2激光、直径和厚度均为4 cm的Cu圆柱靶,可以获得产额为1.2108/J的光核中子。     

激光-近临界等离子体高能高亮度X射线的产生

基于激光驱动超热电子产生的高品质X射线源是高能量密度实验中有效的诊断技术手段,对辐射源亮度、穿透性和时空分辨率等特性具有极高的要求。结合粒子模拟和蒙特卡罗模拟研究,首先利用近临界密度等离子体实现了激光自聚焦通道中的大电量高能电子加速,通过直接加速机制产生了电量超过600 nC、有效温度可达15 MeV的高能电子;以此为基础提高电子-光子能量转换率,有效优化了光子能量和产额,并通过一定的转换靶参数优化方案产生了微焦点(FWHM小于200 m)、高能、高亮度X射线,为高空间分辨(小于200 m)成像诊断提供了很好的途径,有望早日实现激光等离子体轫致辐射单脉冲瞬态照相的实际应用。     

超短超强激光与铜靶相互作用产生Kα源的蒙特卡罗模拟

超短超强激光打靶产生的超热电子，与固体靶相互作用时会产生Kα线辐射.由经典定标律给出了法线方向超热电子的温度.利用蒙特卡罗方法，对超热电子在固体靶中的传输进行了研究，模拟了不同靶厚度情况下Kα产额和角分布及不同电子温度下Kα光子的转化效率.计算结果与实验符合较好.结果表明：在一定电子温度下，随着靶厚度的增加Kα光子产额会达到饱和，并会使Kα光子发射的各向异性变得更加严重；存在最佳的电子温度，使Kα线转化效率最高. 关键词： 超短超强激光 超热电子 蒙特卡罗方法 Kα线')" href="#">Kα线     

对超热电子诱生的磁场分布的估算

利用简化模型估算了电荷分离场及由超热电子逃逸在等离子体表面产生的自生磁场的大小和空间分布.受电荷分离场的影响以及超热电子逃逸数的限制,超热电子产生的环形磁场主要分布于等离子体表面附近的焦斑半径内,仅当超热电子束流很强时(在1μm半径截面内达到10³A量级),环形磁场才可以达到10²T量级.一般情况下,由超热电子产生的磁场极小. 关键词： 磁场 超热电子     

超热电子角分布和能谱的实验研究

对超短超强脉冲激光与固体薄膜靶相互作用产生的超热电子的空间分布和能谱特性进行了研究. 结果表明，超热电子的角分布和能谱均表现出各向异性. 分析认为这主要与超热电子产生的机制有关. 能谱的各向异性解释了目前各研究小组在相同的激光功率密度下，得到的超热电子温度却有很大差别的现象. 关键词： 飞秒激光 等离子体 能谱 角分布 各向异性     

康普顿γ光源SLEGS对长寿命裂变产物126Sn的嬗变潜力

结合激光康普顿散射模拟程序4D-MCLCSS和Geant4软件包, 模拟上海激光电子γ源(SLEGS)的γ光产生及其对长寿命裂变产物¹²⁶Sn的光核嬗变过程, 研究嬗变率与嬗变靶几何参数的依赖关系, 并初步诊断基于SLEGS的光核嬗变产物分布, 获得¹²⁶Sn嬗变靶的最佳靶厚和半径分别为16cm和0.4cm, 对应的嬗变率为1.89×10⁶/s。研究结果表明:基于SLEGS的光核嬗变率比强激光驱动的轫致辐射法要高2倍, 而且升级潜力巨大。     

金属靶和绝缘靶对飞秒激光吸收的比较

利用脉宽为150fs、强度为8×10¹⁵W/cm²的P偏振飞秒激光研究了与 金属靶和绝缘靶 相互作用过程中的激光能量吸收、超热电子产额及超热电子能谱. 实验发现，由于绝缘靶电 导率小，因此其电荷分离势大于金属靶，从而导致绝缘靶比金属靶具有较小的激光能量吸收 、较少的超热电子发射和较高的超热电子温度. 关键词： 金属靶 绝缘靶 激光吸收 超热电子     

对超热电子诱生的磁场分布的估算

利用简化模型估算了电荷分离场及由超热电子逃逸在等离子体表面产生的自生磁场的大小和空间分布.受电荷分离场的影响以及超热电子逃逸数的限制,超热电子产生的环形磁场主要分布于等离子体表面附近的焦斑半径内,仅当超热电子束流很强时(在1μm半径截面内达到kA量级),环形磁场才可以达到10²T量级.一般情况下,由超热电子产生的磁场则极小 关键词： 磁场 超热电子     

激光功率密度对Al膜靶后表面快电子发射的影响

 报道了在20 TW皮秒激光器上完成的p偏振激光与等离子体相互作用过程中产生的快电子的角分布和能谱测量结果。实验得到：当激光功率密度小于10¹⁷ W/cm²时,电子发射没有明显定向性,在激光入射面内多峰发射;当激光功率密度大于10¹⁷ W/cm2,小于10¹⁸ W/cm²时,电子主要沿靶面法线方向发射;当激光功率密度达到相对论强度时,电子主要沿激光传播方向发射;激光功率密度未达到相对论强度时,靶后表面法线方向快电子能谱拟合平均温度符合共振吸收温度定标率;激光功率密度达相对论强度以上时,靶后表面法线方向快电子能谱拟合平均温度高于已有的温度定标率。     

飞秒激光-薄膜靶相互作用中超热电子产额和激光转化效率

 在激光能量130 mJ（靶面），脉宽60 fs，波长800 nm，对比度1∶10^-6，激光与靶法线成45°夹角，P偏振，靶面激光峰值功率密度约为7.0×10¹⁷ W·cm^-2，无预脉冲的条件下，采用电子谱仪与经γ标准源标定的LiF热释光探测器（TLD）相配合，测量了飞秒激光-薄膜靶相互作用中产生的超热电子能谱。根据所测的能谱，推算出超热电子的产额和激光能量转化为超热电子能量的效率，在靶法线方向分别为1.19×10¹⁰/sr和4.55%/sr，在激光反射方向分别为1.83×10⁹/sr和0.76%/sr。结果显示，不同方向的超热电子产额和激光转化效率有所不同，原因在于激光-等离子体相互作用产生的超热电子构成各向异性的分布。     

Manipulation of optical properties of Ag/Cu alloy nanowire arrays embedded in anodic alumina membranes

Arrays of Ag/Cu alloy nanowires embedded in anodic alumina membranes (AAMs) were synthesized by directly electrodepositing from a mixing electrolyte solution containing Ag⁺ and Cu²⁺ ions. Manipulations of optical properties of the resulting samples were successfully achieved by tuning the molar ratio of Ag⁺ and Cu²⁺ ions in the starting materials. When the ratio is less than 2:20, two surface plasma resonance (SPR) peaks corresponding to Ag and Cu appear, respectively. After annealing treatment, the SPR peak corresponding to Cu disappears, and that of Ag presents a red shift. Furthermore, this red shift can be up to 85 nm when the molar ratio of Ag⁺ and Cu²⁺ reduce to 1:20, which is attributed to the transferable electrons from Cu atoms.     

Ag-Cu离子注入玻璃后不同气氛退火的光吸收研究

采用MEVVA源（metal vapor vacuum arc ion source）引出的强束流脉冲Ag,Cu离子先后注入到SiO₂玻璃，x射线光电子能谱仪（XPS）分析显示Ag，Cu大多仍为金属态，有部分氧化态Cu存在.透射电镜观察分析和光学吸收谱都表明在衬底中形成了纳米合金颗粒.结合有效媒质理论，得到模拟的光学吸收谱，与实验结果基本符合，较好地验证了以上结论.样品退火后颗粒发生分解，分解的颗粒在氧化气氛下被氧化，且有部分向样品表面蒸发；在还原气氛下氧化态元素被还原并成核生长.故 关键词： 离子注入 纳米颗粒 退火 光学吸收率     

Fabrication and properties of ZnO:Cu and ZnO:Ag thin films

Thin films of ZnS and ZnO:Cu were grown by an original metal–organic chemical vapour deposition (MOCVD) method under atmospheric pressure onto glass substrates. Pulse photo-assisted rapid thermal annealing of ZnO:Cu films in ambient air and at the temperature of 700–800 C was used instead of the common long-duration annealing in a vacuum furnace. ZnO:Ag thin films were prepared by oxidation and Ag doping of ZnS films. At first a closed space sublimation technique was used for Ag doping of ZnO films. The oxidation and Ag doping were carried out by a new non-vacuum method at a temperature >500 C. Crystal quality and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL). It was found that the doped films have a higher degree of crystallinity than undoped films. The spectra of as-deposited ZnO:Cu films contained the bands typical for copper, i.e. the green band and the yellow band. After pulse annealing at high temperature the 410 and 435 nm photoluminescent peaks were observed. This allows changing of the emission colour from blue to white. Flat-top ZnO:Ag films were obtained with the surface roughness of 7 nm. These samples show a strong ultraviolet (UV) emission at room temperature. The 385 nm photoluminescent peak obtained is assigned to the exciton–exciton emission.     

Enhanced field emission and patterned emitter device fabrication of metal-tetracyanoquinodimethane nanowires array

Ag(TCNQ) and Cu(TCNQ) nanowires were synthesized via vapor-transport reaction method at a low temperature of 100 °C. Field emission properties of the as-obtained nanowires on ITO glass substrates were studied. The turn-on electric fields of Ag(TCNQ) and Cu(TCNQ) nanowires were 9.7 and 7.6 V/μm (with emission current of 10 μA/cm²), respectively. The turn-on electric fields of Ag(TCNQ) and Cu(TCNQ) nanowires decreased to 6 and 2.2 V/μm, and the emission current densities increased by two orders at a field of 8 V/μm with a homogeneous-like metal (e.g. Cu for Cu(TCNQ)) buffer layer to the substrate. The improved field emission is due to the better conduct in the nanowires/substrate interface and higher internal conductance of the nanowires. The patterned field emission cathode was then fabricated by localized growing M-TCNQ nanowires onto mask-deposited metal film buffer layer. The emission luminance was measured to be 810 cd/m² at a field of 8.5 V/μm.     

The synthesis of Ag/polypyrrole coaxial nanocables via ion adsorption method using different oxidants

Ag/polypyrrole (PPy) coaxial nanocables (NCs) were synthesized by an ion adsorption method. In this method, the pre-made Ag nanowires (NWs) were dispersed in the aqueous solution of copper acetate (Cu(Ac)₂), and the Cu²⁺ ions adsorbed onto the surface of Ag NWs can oxidize pyrrole monomers to polymerize into uniform PPy sheath outside Ag NWs after the Cu(Ac)₂-treated Ag NWs were re-dispersed in the aqueous solution of pyrrole. The morphology of NCs was characterized by transmission electron microscope (TEM) and scanning electron microscope (SEM). The relationship between the thickness of polymer sheath and the concentration of Cu(Ac)₂ was established. As Cu(Ac)₂ which served as the oxidant can also be replaced by AgNO₃ in this synthesis, the differences on the structure of polymer sheath caused by different oxidants were studied by surface-enhanced Raman scattering (SERS), high-resolution transmission electron microscope (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS). Comparing with the characterization results of Ag/PPy NCs synthesized using AgNO₃ as the oxidant which indicates the random arrangement of PPy chains at the interface between polymer sheath and Ag NWs, PPy chain oxidized by Cu²⁺ tends to show a relatively ordered conformation at the interface with the pyrrole rings identically taking the plane vertical to the surface of Ag NWs. In addition, although the main part of the polymer sheath was composed of PPy whatever kind of oxidant was used, the sheath of the NCs oxidized by Cu²⁺ is typical for the existence of Cu(I)–pyrrole coordinate structures with strong Cu(I)–N bond signal shown in XPS characterization.     

Grain Boundary Diffusion and Linear and Non-Linear Segregation of Ag in Cu

Ag grain boundary (GB) diffusion was measured in the Cu-0.2at%Ag alloy in a wide temperature range from 473 to 970 K. The direct measurements of Ag GB diffusivity D ^alloy _gb under conditions of the Harrison C regime revealed that D ^alloy _gb is almost identical to D ^pure _gb determined earlier for Ag diffusion in high-purity Cu (Divinski, Lohmann, and Herzig, 2001). The penetration profiles determined in the Harrison B regime showed a complex, multi-stage shape. This diffusion behavior can be rationalized assuming that besides GBs significantly covered by segregated Ag atoms, some fraction of GBs remains almost free from Ag atoms in the studied temperature interval. The total amount of pure GBs drastically decreases with decreasing temperature. This hypothesis was proven by measurements of Ag GB diffusion in Cu near 5 bicrystals, which allowed us to analyze in detail the non-linear segregation of Ag in Cu GBs.     

低相变温度垂直取向的CoPtCu/Ag纳米复合膜

采用磁控溅射(Ag/Cu/CoPt)_n多层膜先驱体结合真空退火的方法制备了一系列CoPtCu/Ag纳米复合薄膜，通过优化薄膜中Ag以及Cu的含量，成功制备出了低相变温度垂直取向的CoPtCu/Ag纳米复合膜，该膜在450℃退火即可发生相变，该温度比目前所报导的CoPtAg纳米复合膜的相变温度降低了150℃. 实验结果表明，薄膜中一定含量的Ag元素能够有效诱导薄膜的(001)取向，Cu元素的加入能有效降低薄膜的有序化温度. 对于特定组分为Co₄₀Pt₃₆Cu₈Ag₁₆的薄膜，经500℃退火后已经显示了明显的(001)取向，垂直于膜面方向上的矫顽力为5.0×10⁵A/m，并且薄膜中晶粒尺寸仅为4—5nm，为将来CoPt-L1₀有序相合金薄膜用于超高密度垂直磁记录介质打下了基础. 关键词： 磁记录材料 CoPt 纳米复合膜