Al(111)/Al_3Li(111)的界面性质

运用基于第一性原理的平面波贋势法,计算研究了Al (111)/Al_3Li (111)的界面性质.结果表明:Al (111)/Al_3Li (111)的界面具有三种原子配位关系结构,其中界面处仍保持与基体Al一致的三明治堆垛构型的界面稳定性最好.计算表明,该结构界面最薄弱层,位于Al_3Li (111)内,其分离功最小(约1.53 J/m~2),强度最弱,而基体Al和Al_3Li内部的强度随着到界面距离的增大而逐渐增强.     

锰原子的二步多光子与三步三光子共振电离研究

激光共振电离技术是痕量分析中的重要手段之一。文章以速率方程理论为基础,对锰原子的激光共振电离过程进行了分析,讨论了电离过程中各级激发光功率密度及激光作用时间对电离效率的影响;提出了根据所要求的电离效率和激光作用时间计算所需要的各激发光或电离激光的功率密度的方法;得到了饱和激发或饱和电离的规律及阈值条件。研究发现,在激光作用时间为10 ns时,锰原子饱和电离的激光强度阈值基本都在108 W·cm-2的量级,只有“1+1”双色双共振低三个量级;而“1+1”和“1+1+1”饱和激发的激光强度阈值则在102～103 W·cm-2量级;并且随着激光作用时间的增加,各过程的饱和激发和饱和电离的激光强度阈值将单调减少。     

Two-photon photoemission from Ni (1 1 0) and (1 1 1) surfaces

Photoemission was observed when the samples were irradiated with photons in the energy range from 2.5 to 3.3 eV from a tunable dye laser with an intensity of 10⁸Wcm^?2. The emission shows a quadratic intensity dependence. The variation with angle of incidence and polarization is different for the two surfaces. The result obtained from the (1 1 0) surface is discussed with help of the band structure as a two-photon surface photoelectric effect.     

Structure of the laser annealed Si(1 1 1)-(1 × 1) surface

LEED analysis of the laser annealed Si(1 1 1)-(1 × 1) surface shows that a model with a graphite-like top double layer of atoms with a spacing of 2.95±0.02 Å from the second double layer describes the LEED data as well as the Zehner model, but involves large displacements of the atoms normal to the surface as required by ion scattering results. It is suggested that this model provides a natural interpretation of the low energy He atom scattering data for the Si(1 1 1)-(7 × 7) surface.     

Schottky barriers on diamond (1 1 1)

We have measured Schottky barrier heights Ø_B = 1.3 eV for Au and Ø_B = 1.5 eV for Al on (p-type) diamond(1 1 1)?(1 × 1) using photoelectron spectroscopy with synchroton radiation. These barrier heights yield a barrier index of S = 0.2, which is closer to the values for Si and Ge (S ～ 0.1) than to the value S = 0.4 calculated for jellium on an ideal diamond(1 1 1) surface. After reacting Al with the diamond surface by annealing to 800° C, we find that Ø_B decreases by 0.24 to 1.25 eV.     

Comparing the band structure of Ag(1 1 1) monolayers on Ni(1 1 1) and Ni (0 0 1)

Ag(1 1 1) monolayers prepared on two substrates, Ni(1 1 1) and Ni(0 0 1), were studied with angle-resolved photoemission; their two-dimensional band dispersions were found to be identical within experimental uncertainties. Comparing the present results with those for Ag/Cu(0 0 1), the major difference is just a shift of 0.32 eV in all the binding energies. Thus the band topology of Ag overlayers in these systems is quite insensitive to the electronic and atomic structures of the substrates.     

Hanle lifetime measurements of SrI 1P1 and CaI 1P1 levels excited by a neutral beam of 1 1S0 helium atoms

A 0.8 keV He(1 ¹S₀) beam was used to coherently excite the ¹P₁ levels of Sr and Ca targets. The coherence appears as an alignment of the excited state with respect to the beam axis. We report here the results of a Hanle measurement, or a zero-field level-crossing experiment, performed on these coherently excited levels. The radiative lifetimes of the SrI ¹P₁ and CaI ¹P₁ levels were measured to be 4.7 ns and 5.3 ns, respectively. These values are in good agreement with conventional Hanle measurements.     

InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.     

Precise semiconductor nanotubes and nanoshells fabricated on (1 1 0) and (1 1 1) Si and GaAs

In our previous works, we showed that ultrathin epitaxial heterofilms (down to two monolayers for the case of InGaAs/GaAs) can be controllably detatched from substrates and rolled, under the action of internal stresses, into various cylindrical micro- and nanoshells (tubes, scrolls, rings, spirals, etc.). The present review outlines the cornerstone stages in the development of this fabrication technology for semiconductor and metal nanoobjects, including: (1) directional rolling of films yielding 3D micro- and nanoshells of various shapes; (2) assembling of micro- and nanoshells in more complex architectures; (3) super-critical drying of nanoshells, and (4) formation of nanoshells whose sizes can be precisely controlled in three dimensions.With this technology new possibilities that open up for the use of strained films, selectively, grown on uncommonly used (1 1 0) and (1 1 1) surfaces, are presented. The role of mechanical anisotropy in the formation of the 3D nanoshells and the electrical and mechanical properties of formed nanotubes are discussed.     

Relativistic one-step photoemission calculations for Pt(1 1 1)

A fully relativistic one-step theory of photoemission has been applied to normal emission from Pt(1 1 1) induced by circularly polarized ultraviolet radiation. The calculated spin polarization and intensity spectra are in quantitative agreement with experimental data. Individual features are identified as bulk interband transitions and one-dimensional density of state involving initial states of specified symmetries.     

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此处所介绍的厅堂声学计算机模型计算了房间和多功能厅的声学响应。这个模型是以房厅的三维表示为基础的。每个墙面都赋予一个吸声系数,并且分成更小的单元。首先计算了单元间影响系数所组成的矩阵。对于给定的声源,可以计算每个单元收到的能量,并由此定出房厅内任一点的声级,这样又能够算出     

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本文研究了磁场中耦合量子线的三阶非线性光学吸收率,并且利用密度矩阵算符理论导出了三阶非线性光学吸收率的解析表达式.最后,以GaAs/Al     

Beryllium overlayers on Mo(1 1 2) and Mo(0 1 1) surfaces

Low-energy electron diffraction, Auger electron spectroscopy and contact potential difference methods have been used to study formation of Be overlayers on the Mo(1 1 2) and (0 1 1) surfaces in the temperature range from T = 78 K up to the beginning of Be desorption. At a coverage θ = 1, where θ is defined as the ratio between concentrations of adatoms and surface substrate atoms, overlayers were found to be pseudomorphic on both the substrates. Various types of close-packed Be structures were observed at θ > 1. Annealing of the Mo samples covered with Be caused not only overlayer ordering, but also a partial solution of Be in the near-surface layer of Mo and creation of a surface alloy. It is inferred that the work function changes, positive on Mo(1 1 2) up to 0.4 eV and negative on Mo(0 1 1) down to ? 0.6 eV, are caused mainly by changes in surface roughness while the contribution of polarization of the BeMo adsorption bond seems to be only minor.     

A SOLVABLE 1+1-DIMENSIONAL U(1) GAUGE THEORY

A 1+1-dimensional U(1+1) gauge theory is proposed and the exact solution of its spectrum and corresponding energy eigenstates is found.     

Growth of epitaxial thin Pd(1 1 1) films on Pt(1 1 1) and oxygen-terminated FeO(1 1 1) surfaces

Thin Pd films (1-10 monolayers, ML) were deposited at 35 K on a Pt(1 1 1) single crystal and on an oxygen-terminated FeO(1 1 1) monolayer supported on Pt(1 1 1). Low energy electron diffraction, Auger electron spectroscopy, and Kr and CO temperature programmed desorption techniques were used to investigate the annealing induced changes in the film surface morphology. For growth on Pt(1 1 1), the films order upon annealing to 500 K and form epitaxial Pd(1 1 1). Further annealing above 900 K results in Pd diffusion into the Pt(1 1 1) bulk and Pt-Pd alloy formation. Chemisorption of CO shows that even the first ordered monolayer of Pd on Pt(1 1 1) has adsorption properties identical to bulk Pd(1 1 1). Similar experiments conducted on FeO(1 1 1) indicate that 500 K annealing of a 10 ML thick Pd deposit also yields ordered Pd(1 1 1). In contrast, annealing of 1 and 3 ML thick Pd films did not result in formation of continuous Pd(1 1 1). We speculate that for these thinner films Pd diffuses underneath the FeO(1 1 1).     

Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces: A photoemission study

Based on UPS and XPS investigations, it is concluded that a monohydride phase forms at first on the Si(1 1 1)7 × 7 surface. Upon further hydrogen dosing at room temperature, a dihydride phase develops and superposes to the previously formed monohydride phase. The dihydride phase desorbs completely around 250°C and the monohydride phase at about 550°C. A pure dihydride phase obtained by H adsorption cannot be observed on a silicon surface. Silane or disilane adsorption at room temperature exhibits the characteristic features of the dihydride phase without the associated monohydride phase. The obtained phase desorbs at the same temperature as the H induced dihydride phase. That is to our mind the only possibility to obtain a pure dihydride phase.

For germanium in careful conditions we observe only a monohydride phase which desorbs at 150°C. For high hydrogen exposures, we obtain a new phase but XPS measurements indicate oxygen contamination. This place desorbs at 225°C and allows clear distinction between H adsorption and contamination. It is concluded that Ge and Si surfaces have different reactivities for hydrogen adsorption. These conclusions are extended to all Ge and Si surfaces either crystallized or amorphous.