共查询到20条相似文献,搜索用时 213 毫秒
1.
The sliced orthogonal nonlinear generalized (SONG) decomposition and correlation have been demonstrated to be powerful tools in digital image processing and promising for nonlinear optical information processing. In this paper, we propose an optical phase-only filtering system based on SONG decomposition (PBS), in which the phase-only filtering of the target and the input scene binary slices are performed separately by pairs and then added together. We numerically show that the PBS has extremely high and sharp output correlation peak compared with other optical correlators. Furthermore, such a SONG decomposition based phase-only filtering naturally inherits the nature of SONG decomposition, which has strong robustness to additive Gaussian noise and substitutive noise, and also the high light efficiency of phase-only filtering. We demonstrate that the PBS may serve as an optimized optical correlation scheme, which is promising in nonlinear optical pattern recognition. 相似文献
2.
基于惠更斯菲涅尔广义衍射积分,对变量为径向平方的贝塞耳函数调制的高斯光束(QBG光束)通过有圆孔光阑限制的一阶ABCD光学系统的传输进行了研究.采用将圆域函数可表示为复高斯函数叠加的方法,推导出了普适的场分布解析公式,以QBG光束通过有圆孔光阑限制的薄透镜系统为例进行了分析与讨论,数值计算结果证明了本文所用方法的优点,所得结果与直接用广义衍射积分公式进行复杂的数值计算结果完全一致
关键词:
QBG光束
光阑
ABCD光学系统
传输特性 相似文献
3.
运用密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA),对替代式掺杂钒(V)的闪锌矿(ZnS)的超晶胞电子结构进行了计算。研究了ZnS掺杂的光学性质及其电子结构,通过分析发现,光吸收的计算结果与运用配位场理论得到的计算结果以及实验数据符合较好;同时还对引入杂质前后电子结构的异同以及价键的一些性质进行了对比分析:因为杂质V的引入,态密度出现了几个新的峰,并且本体能带向低能方向偏移了大约2.5 eV,V所带正电荷为0.28,比任何一类Zn原子都要小,S—V键的共价性最强、键长最短。 相似文献
4.
推导了描述稳态运行,具有腔内光放大的环形腔单共振光参量振荡器(ICOASRO)的功率特性的高斯光束理论.在这种结构的单共振光参量振荡器(SRO)中,适当地选择光放大器的参数,可以很大程度地降低单共振光参量振荡器的抽运阈值.在平均场近似下无二阶非线性交叉耦合作用的具有腔内光放大的环形腔单共振光参量振荡器的工作范围分成四个工作区域,且存在最小的单共振光参量振荡器的抽运阈值.文中的分析考虑了作为光放大器的激光增益介质的端面抽运特性,考虑了一般化单共振光参量振荡器的特性.
关键词:
单共振光参量振荡器
光放大
阈值 相似文献
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根据新近发展起来的迭代特征函数展开方法(IEEM),提供了一个分析任意非线性平板介质波导中TE波和TM波传播特性的途径。和有限元分析的结果比较,证明该方法在处理此类非线性问题时是非常有效的,而且很容易被推广到各种几何形状的非线性介质波导的分析中去。 相似文献
8.
色散缓变光纤中飞秒孤子压缩与稳定传输 总被引:4,自引:1,他引:3
运用数值方法研究了色散缓变光纤中飞秒基本孤子的传输特性,发现基本孤子脉冲不仅能被压缩,而且压缩光脉冲能保持脉宽不变转输即稳定传。光脉冲压缩过程中,发现三阶色散效应有较大的影响。适当地选取色散缓变光纤结构参数可能获得高质量的超短压缩光脉冲。对压缩光脉冲稳定伟机理探索表明,光纤二阶色散纵向变化率,三阶色散与喇曼自散射效应共同作用导致压缩光脉冲稳定传输。 相似文献
9.
Abstract In this article, light reflection spectrums for different one-dimensional multi-layer structures are obtained. Optical reflectivities for periodic, superperiodic, and quasiperiodic structures have been calculated using the transfer matrix method. PBGs of each structure have been obtained using the optical reflectivity pattern. From a comparison of reflectivity and standard dense wavelength division multiplexing grids, it is demonstrated that narrow and dense band filters can be built from generalized Fibonacci quasiperiodic structures. Reflectivity of these structures contains bands that meet the ITU-T dense wavelength division multiplexing standard. Reflectivity of other multi-layer structures has poor or less potential to be used in dense wavelength division multiplexing systems. 相似文献
10.
A bi-directional fiber ring laser with a semiconductor optical amplifier has been developed in which a frequency difference between the counter-propagating oscillations is controlled by an introduced birefringent medium. With the material which causes the retardation change by a physical phenomenon to be measured, the laser in this study is applicable to a novel fiber sensor of which the sensing signal is obtained in a frequency domain. 相似文献
11.
A first-principles study has been performed to calculate the electronic and optical properties of the SbxSn1xO system.The simulations are based upon the method of generalized gradient approximations with the Perdew-Burke-Ernzerhof form in the framework of density functional theory.The supercell structure shows a trend from expanding to shrinking with the increasing Sb concentration.The increasing Sb concentration induces the band gap narrowing.Optical transition has shifted to the low energy range with increasing Sb concentration.Other important optical constants such as the dielectric function,reflectivity,refractive index,and electron energy loss function for Sb-doped SnO2 are discussed.The optical absorption edge of SnO2 doped with Sb also shows a redshift. 相似文献
12.
The applicability of Kramers-Kronig (K-K) relation under nearly sharp resonant transition regime in narrow-gap semiconductors
has been established and consequently, a generalized dispersion relation for nonlinear optical susceptibility of a dielectric
is derived. This relation can be employed in the study of nonlinear optical processes in solids as well as in plasmas over
a wide frequency spectrum. 相似文献
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14.
基于密度泛函理论,采用广义梯度近似方法,计算了Al,Mg掺杂的闪锌矿型GaN的电子结构和光学性质,分析了其电子态分布与结构的关系,给出了掺杂前后GaN体系的介电函数和复折射率函数.计算结果表明掺有Mg的GaN晶体空穴浓度增大,会明显提高材料的电导率,而Al掺杂GaN晶体的载流子浓度不变,只是光学带隙变宽;通过分析掺杂前后GaN晶体的介电函数和复折射率函数,解释了体系的发光机理,为GaN材料光电性能的进一步开发与应用提供了理论依据.通过比较可知,所得出的计算结果与现有文献符合得很好.
关键词:
GaN晶体
电子结构
光学性质
掺杂 相似文献
15.
The entropy in the background of the brane-world black hole with tidal charge has been studied by using the generalized uncertainty principles. Comparing with the four-dimensional black holes, this TeV-size black hole, which contains information of the extra dimension, may increase the Bekenstein–Hawking entropy. We also show that the entropy has a negative logarithmic correction once the generalized uncertainty principles are taken into account. 相似文献
16.
Based on the beam model for the flattened multi-Gaussian beams (FMGBs) with an axial shadow and partially coherent theory, the expression for cross-spectral density of partially coherent FMGBs with an axial shadow has been given, and the analytical expression for the spectral intensity of partially coherent FMGBs with an axial shadow passing through paraxial ABCD optical systems has been derived. The spectral shift of partially coherent FMGBs with an axial shadow focused by a thin lens has been analyzed quantitatively. The effects of the beam profile, spatial coherence parameter and the system parameters on the relative spectral shift have been discussed in detail. Our results show that the spectral intensity and the spectral shift of partially coherent FMGBs with an axial shadow passing through paraxial ABCD optical systems depend on the source spectral density, the generalized Fresnel number of the system, the transverse coordinate, the spatially coherence parameter, as well as the beam orders. 相似文献
17.
We calculate the entanglement of a generalized elliptical vortex formed by quantized radiation field, using Wigner quasiprobability distribution function for such states. We find a critical squeezing parameter above which the entanglement is less for higher vorticity, which is counter intuitive. 相似文献
18.
Direct laser writing has become a versatile and routine tool for the mask‐free fabrication of polymer structures with lateral linewidths down to less than 100 nm. In contrast to its planar counterpart, electron‐beam lithography, direct laser writing also allows for the making of three‐dimensional structures. However, its spatial resolution has been restricted by diffraction. Clearly, linewidths and resolutions on the scale of few tens of nanometers and below are highly desirable for various applications in nanotechnology. In visible‐light far‐field fluorescence microscopy, the concept of stimulated emission depletion (STED) introduced in 1994 has led to spectacular record resolutions down to 5.6 nm in 2009. This review addresses approaches aiming at translating this success in optical microscopy to optical lithography. After explaining basic principles and limitations, possible depletion mechanisms and recent lithography experiments by various groups are summarized. Today, Abbe's diffraction barrier as well as the generalized two‐photon Sparrow criterion have been broken in far‐field optical lithography. For further future progress in resolution, the development of novel tailored photoresists in combination with attractive laser sources is of utmost importance. 相似文献
19.
采用基于密度泛函理论(DFT)框架下广义梯度近似(GGA)的PBE平面波超软赝势方法,计算了本征ZnO,Al掺杂ZnO(ZnAlO)和Ga掺杂ZnO(ZnGaO)的能带结构、态密度、复介电函数和复电导率. 其中Al或Ga是以替位杂质的形式进入ZnO晶格. 计算结果表明纤锌矿型ZnO,ZnAlO和ZnGaO都是直接带隙半导体材料,掺杂后ZnO的带隙变小,且ZnAlO的带隙略大于ZnGaO. 掺杂后ZnO的电子结构发生变化,费米能级由本征态时位于价带顶上移进入导带,ZnO表现为n型掺杂半导体材料,掺杂后在导带底出现大量由掺杂原子贡献的自由载流子—电子,明显提高了电导率和介电函数,改善了ZnO的导电性能,并且ZnAlO的导电性能要略好于ZnGaO. 相似文献
20.
采用基于密度泛函理论(DFT)框架下广义梯度近似(GGA)的PBE平面波超软赝势方法,计算了本征ZnO,Al掺杂ZnO(ZnAlO)和Ga掺杂ZnO(ZnGaO)的能带结构、态密度、复介电函数和复电导率. 其中Al或Ga是以替位杂质的形式进入ZnO晶格. 计算结果表明纤锌矿型ZnO,ZnAlO和ZnGaO都是直接带隙半导体材料,掺杂后ZnO的带隙变小,且ZnAlO的带隙略大于ZnGaO. 掺杂后ZnO的电子结构发生变化,费米能级由本征态时位于价带顶上移进入导带,ZnO表现为n型掺杂半导体材料,掺杂后在导带底出现大量由掺杂原子贡献的自由载流子—电子,明显提高了电导率和介电函数,改善了ZnO的导电性能,并且ZnAlO的导电性能要略好于ZnGaO. 相似文献