Fabrication of piezoelectric AlN thin film for FBARs

This paper focuses on the fabrication of film bulk acoustic-wave resonator (FBAR) comprising an aluminum nitride (AlN) piezoelectric thin film sandwiched between two metal electrodes and located on a silicon substrate with a low-stress silicon nitride (Si₃N₄) support membrane for high frequency wireless applications, and analyzes the optimization of the thin AlN film deposition parameters on Mo electrodes using the reactive RF magnetron sputter system. Several critical parameters of the sputtering process such as RF power and Ar/N₂ flow rate ratio were studied to clarify their effects on different electrodes characteristics of the AlN films. The experiment indicated that the process for Mo electrode was easier compared with that of the Pt/Ti or Au/Cr bi-layer electrode as it entailed only one photo resist and metal deposition step. Besides, Pt/Ti or Au/Cr electrodes reduced the resonance frequency due to their high mass density and low bulk acoustic velocity. Compared with the case of the Al bottom electrode, there is no evident amorphous layer between the Mo bottom electrode and the deposited AlN film. The characteristics of the FBAR devices depend not only upon the thickness and quality of the AlN film, but also upon the thickness of the top electrode and the materials used. The results indicate that decreasing the thickness of either the AlN film or the top electrode increases the resonance frequency. This suggests the potential of tuning the performance of the FBAR device by carefully controlling AlN film thickness. Besides, increasing either the thickness of the AlN film or higher RF power has improved a stronger c-axis orientation and tended to promote a narrower rocking curve full-width at half-maximum (FWHM), but increased both the grain size and the surface roughness. An FBAR device fabricated under optimal AlN deposition parameters has demonstrated the effective electromechanical coupling coefficient (k _eff²) and the quality factor (Q _{f x} ) are about 1.5% and 332, respectively.     

Fabrication and analysis of ZnO thin film bulk acoustic resonators

This study employs RF magnetron sputter technique to deposit high C-axis preferred orientation ZnO thin film on silicon substrate, which is then used as the piezoelectric thin film for a thin film bulk acoustic resonator (FBAR). Electrical properties of the FBAR component were investigated by sputtering a ZnO thin film on various bottom electrode materials, as well as varying sputter power, sputter pressure, substrate temperature, argon and oxygen flow rate ratio, so that structural parameters of each layer were changed. The experimental results show that when sputter power is 200 W, sputter pressure is 10 mTorr, substrate temperature is 300 °C, and argon to oxygen ratio is 4:6, the ZnO thin film has high C-axis preferred orientation. The FBAR component made in this experiment show that different bottom electrode materials have great impact on components. In the experiment, the Pt bottom electrode resonant frequency was clearly lower than the Mo bottom electrode resonant frequency, because Pt has higher mass density and lower acoustic wave rate. The component resonant frequency will decrease as ZnO thin film thickness increases; when top electrode thickness is higher, its resonant frequency also drops, due to top electrode mass loading effect and increased acoustic wave path. Therefore, ZnO thin film and top/bottom electrode thickness can be fine-tuned according to the required resonant frequency.     

Integrated polymers (PVCi/PMATRIFE) microring resonators for low power tunable filters

In this paper we present optical and thermo-optical characterization results of integrated filters based on micro-ring resonators fabricated with a couple of polymers “PVCI/PMATRIFE”. Their high index contrast (Δn～0.15 at the wavelength of 1550 nm) allows to make small size waveguides with cross sections of 1.5×1.5 μm². The study of the impact of different gaps on the extinction ratio and FWHM (full width at half maximum) of filters leads to a better design. First experiments of thermal tunability of the microring filter using a thermo-electric cooler (TEC) are also reported giving a 5 nm shift of the dropped wavelength for a temperature change of 40 K. The fabrication of gold electrodes on microrings is reported and the electrical power required for the tuning of the drop wavelength of 0.0055 nm/1 mW show that with an optimized electrode design the consumption will be low.     

FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO2/Si(1 0 0)

A simulation study of Rayleigh wave devices based on a stacked AlN/SiO₂/Si(1 0 0) device was carried out. Dispersion curves with respect to acoustic phase velocity, reflectivity and electromechanical coupling efficiency for tungsten W and aluminium Al electrodes and different layer thicknesses were quantified by 2D FEM COMSOL simulations. Simulated acoustic mode shapes are presented. The impact of these parameters on the observed Rayleigh wave modes was discussed. High coupling factors of 2% and high velocities up to 5000 m/s were obtained by optimizing the AlN/SiO₂ thickness ratio.     

Study of oxidation process of Cr/Cu/Cr thin film electrodes

Understanding the oxidation process of Cr/Cu/Cr laminated thin film electrode is important for developing new oxidation-resistant electrodes. By studying the evolution of crystal structure, morphology and electric resistivity of Cr/Cu/Cr thin films and electrodes that were post-annealed at different temperatures, the oxidation mechanism and process of Cr/Cu/Cr electrode were proposed. Copper is first oxidized into Cu₂O at low temperatures (<310 °C), and converts to CuO phase at higher temperatures. Two pathways for oxygen diffusion were identified: diffusion from the protective Cr layer, and diffusion from the sidewall of electrode, of which the latter one leads to total oxidation of copper interlayer at high temperatures (>310 °C). As a result, the passivation of Cu metal at electrode sidewalls is crucial in reducing oxidation of Cr/Cu/Cr electrodes or designing new copper-containing oxidation-resistant electrodes.     

Effects of Al and Ti/Cu on Synthesis of Type-IIa Diamond Crystals in Ni70Mn25Co5-C System at HPHT

High-quality type-Ⅱa gem diamond crystals are successfully synthesized in a NiToMn25Co5-C system by temperature gradient method （TGM） at about 5.5 GPa and 1560 K. Al and Ti/Cu are used as nitrogen getters respectively. While nitrogen getter Al or Ti/Cu is added into the synthesis system, some inclusions and caves tend to be introduced into the crystals. When Al is added into the solvent alloy, we would hardly gain high-quality type-Ⅱa diamond crystals with nitrogen concentration Nc 〈 1 ppm because of the reversible reaction of Al and N at high pressure and high temperature （HPHT）. Piowever, when Ti/Cu is added into the solvent alloy, high-quality type-Ⅱa diamond crystals with Nc 〈 1 ppm can be grown by decreasing the growth rate of diamonds.     

Material transport in Al-metallizations of power-loaded SAW structures

Material transport in Al/Ti-finger electrodes on LiNbO₃ substrates of power-loaded surface acoustic wave (SAW) structures were investigated under microscopic observation with respect to stress-induced material transport. Additionally, investigations were carried out before and after SAW loading during lifetime experiments. For the experiments, a special power SAW test structure was applied realizing travelling SAWs. The results show that the microstructure of the electrodes was damaged by void and hillock formation even at moderate input power. This changes the electrical and acoustical properties of the SAW structures irreversibly. The logarithmic time-to-failure (TTF) of damaged SAW structures depends linearly on loading time and rf power.     

Anodic oxidation of anthraquinone dye Alizarin Red S at Ti/BDD electrodes

The boron-doped diamond (BDD) thin-film electrode with high quality using industrially titanium plate (Ti/BDD) as substrate has been prepared and firstly used in the oxidation of anthraquinone dye Alizarin Red S (ARS) in wastewaters. The Ti/BDD electrodes are shown to have high concentration of sp³-bonded carbon and wide electrochemical window. The results of the cyclic voltammetries show that BDD has unique properties such as high anodic stability and the production of active intermediates at the high potential. The oxidation regions of ARS and water are significantly separated at the Ti/BDD electrode, and the peak current increases linearly with increasing ARS concentration. The bulk electrolysis shows that removal of chemical oxygen demand (COD) and color can be completely reached and the electrooxidation of ARS behaves as a mass-transfer-controlled process at the Ti/BDD electrode. It is demonstrated that the performances of the Ti/BDD electrode for anodic oxidation ARS have been significantly improved with respect to the traditional electrodes.     

Observation of deuteron D-state and compound nucleus effects in (d,p) reactions on 46Ti and 52Cr with a polarized deuteron beam

The cross section and the vector and tensor analyzing powers have been measured for ⁴⁶Ti(d, p)⁴⁷Ti at deuteron energies of 6 and 10 MeV and ⁵²Cr(d, p)⁵³Cr at 6 MeV. Transitions were observed to the states at E_x=0.159, 1.549 and 1.793 MeV in ⁴⁷Ti and the states at E_x=0.0, 0.564, 1.006 and 2.321 MeV in ⁵³Cr. In addition, the cross sections and vector analyzing powers for deuteron elastic scattering were measured for the same targets and deuteron energies and compared to optical model calculations. The choice of optical parameters for the DWBA analysis of the (d, p) reactions is discussed. Calculations made with the DWBA method show that the deuteron D-state must be included to reproduce even qualitatively the (d, p) tensor analyzing power measurements. The j-dependence of the tensor analyzing power T₂₂ is discussed. The validity of the local energy approximation (which was used to incorporate the deuteron D-state into the DWBA calculations) is evaluated by comparison to finite range calculations. The contribution of compound nucleus reactions to the measured cross sections and analyzing powers was investigated. In order to determine the compound cross section, the Ericson fluctuations in excitation functions of cross section and vector analyzing power were measured from 5 to 7 MeV on each target. The formulas used to calculate the polarization observables from the Hauser-Feshbach theory are presented.     

Bounds on the coupling parameters in field theoretical models of nuclear physics

Neutrons of energies within a 50 eV interval at 1970 eV have been selected from reactor neutrons by means of resonance scattering on a target of⁶³Cu and subsequently by the 1970 eV resonance of a⁸⁰Se target. Insertion of stationary filters and the technique of difference measurements with a resonance filter resulted in a high selectivity, which allowed the determination of cross sections for quasi-monoenergetic neutrons for the elements: H, C, O, F, Na, Mg, Al, Si, P, Cl, K, Ca, Sc, Ti, V, Mn, Co, Ni, Cu, Ga, Pb and Bi. The precision cross sections of Pb and H contribute to investigations of fundamental neutron interactions. The measured σ(Pb)=11.198±0.003 b was recently used to deriveα _n=(0.8±1)10^?3 fm³ for the electric polarizability of the neutron. The neutron-proton cross sectionσ(¹ H)=20.13±0.03 b and data at 143 keV, 〈1.3〉 MeV, 〈2.1〉 MeV and from the literature provide a refined set of the scattering parameters for the shape-independent effective-range approximation of the neutron-proton interaction.     

On the passive electrode signal in X-ray detectors based on superconducting tunnel junctions

X-ray detectors based on superconducting tunnel junctions with the multilayer electrode structure described by the formula Ti/Nb/Al, AlO _x /Al/Nb/NbN were studied. The main signal arose during X-ray absorption in the top electrode and had an energy resolution of ∼90 eV at the 5.9-keV line. The bottom passive Ti/Nb electrode provided rapid absorption of excess quasiparticles. The residual signal of the passive electrode was from 7 to 17% of the main signal amplitude. The dependences of the amplitude of this signal on the voltage and the absorbed X-ray energy were measured for detectors with different thicknesses of the top and bottom electrodes. The rate of quasiparticle trapping by the energy trap in the Ti/Nb bilayer was estimated. The main mechanisms of the formation of the passive electrode signal formation were considered and methods for its suppression were proposed.     

Improved yield in molecular electronic devices using amino-style molecules

Molecular electronic devices were fabricated with amino-style derivatives as redox-active components. These molecules are amphiphilic to allow monolayer formation by the Langmuir–Blodgett (LB) method, and this LB monolayer is inserted between two metal electrodes. On measuring the current–voltage (I–V) characteristics, it was found that the Al/amino style LB monolayer/Al devices show remarkable hysteresis and switching behavior, so that they can be used as memory devices at ambient conditions, when an aluminum oxide layer exists on the bottom electrode. From the results of I–V measurements, we acquired values of the switching voltage and some large on/off ratios in the case of the ASBC-18 molecule. Also, we improved the yield of the molecular electronic device by reducing the area of the device and by inserting a Ti protecting layer between the top metal electrode and the amino style LB monolayer.     

Triton-emission cross sections with 30 MeV d(Be) break-up neutrons

Triton-emission cross sections were measured for Al, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Nb, Mo, Ag, Ta, Tl, Pb and Bi with a 30 MeV d(Be) break-up neutron spectrum characterized by a multiple-foil activation technique. The accumulated tritium was separated by vacuum extraction and measured by low-level gas-phase β^? counting. The systematic trend in the cross sections is somewhat similar to that in the 53 MeV d(Be) break-up neutron spectrum; apart from some initial decrease as a function of Z, the cross section is almost constant over the entire range of Z = 22 to 83. The magnitudes of the cross sections lie between those with 14 MeV neutrons and 53 MeV d(Be) break-up neutrons. Hauser-Feshbach calculations show that the statistical model describes the triton-emission cross sections for nuclei in the (2s, ld) shell within a factor of 2; for the heavier nuclei, however, the calculated cross sections are much smaller than the experimental values.     

A study of π− charge-exchange reactions on nuclei at 48 GeV/c

The charge-exchange cross sections were measured for π^? on Li, C, Al and Cu nuclei at momentum 48 GeV/c. By comparing the data obtained for nuclei with those for hydrogen under the same conditions the effective numbers of protons are defined. The conclusion is made that η⁰ mesons are absorbed in nuclei weaker then π⁰. The total cross section of η⁰ interactions with the nucleon is determined to be σ_tot(η⁰ N) = 15 ± 5 mb in agre ement with the quark model.     

Ultrathin amorphous Ti–Al film used as a diffusion barrier for copper metallization

The viability of ultrathin amorphous Ti–Al film (～4 nm) as a diffusion barrier layer between Cu and Si for the application in Si-based ultra-large scale integration (ULSI) has been investigated. The Cu/Ti–Al/Si heterostructures are annealed in a high vacuum at various temperatures. There is no impurity peaks in the X-ray diffraction patterns for the samples up to annealing temperature of 800 ^°C, although the island-like grains were observed on the surface of the 800 ^°C annealed sample due to dewetting and agglomeration of the Cu film. No inter-reactions can be found from the images of transmission electron microscopy and Ti–Al is still amorphous after high-temperature annealing. These results indicate that Ti–Al film can effectively separate Cu from Si at high temperatures, and that the amorphous ultrathin Ti–Al film can be a very good barrier layer for Cu metallization.     

X-ray emission from 424-MeV/u C ions impacting on selected target

The K-shell x-rays of Ti, V, Fe, Co, Ni, Cu, and Zn induced by 424-MeV/u C~(6+) ion impact are measured. It is found that the K x-ray shifts to the high energy side and the intensity ratio of Kβ/Kα is larger than the atomic data, owing to the L-shell multiple-ionization. The x-ray production cross sections are deduced from the experimental counts and compared with the binary encounter approximation(BEA), plane wave approximation(PWBA) and energy-loss Coulomb-repulsion perturbed-stationary-state relativistic(ECPSSR) theoretical predictions. The BEA model with considering the multipleionization fluorescence yield is in better consistence with the experimental results. In addition, the cross section as a function of target atomic K-shell binding energy is presented.     

Elastic pd scattering at 5.55 GeV/c incident momentum

Based on 150 000 photographs taken at the ZGS with the 30 inch deuterium-filled chamber we present an analysis of the elastic $\text{p}$d scattering reaction. Due to unrecoreded small deuteron recoils we were only able to measure the elastic cross section in the four-momentum region |t| > 0.03 (GeV/c)². Extrapolation towards small |t| by two different methods gave us two compatible estimates of the total elastic cross section. The differential cross section was analyzed by means of the Glauber formalism both with and without the effects due to the D-wave part of the deuteron wave function. The differential cross sections of np at 5.4 GeV/c and $\text{pn}$ deduced from our data were compared and exhibit a crossover phenomenon.     

Tailoring resistive switching characteristics in WOx films using different metal electrodes

We have investigated the role of the metal/oxide junction interface on the resistive switching (RS) characteristics in WO_3+x films. The WO_x films are fabricated on Pt substrates by magnetron sputtering at room temperature. Top metal contact (Au or Al) is fabricated by using thermal evaporator. The thicknesses of WO_x films and top electrodes are 1 μm and 200 nm, respectively. It has been found that the bi-polar RS direction is dependent on the choice of top metal electrode, Au or Al. The sample with a Au top electrode shows clockwise (CW) RS mode whilst the sample with a Al top electrode shows counter-clockwise (CCW) RS mode. The on/off ratio is 10 times for Au/WO_x/Pt and 100 times for Al/WO_x/Pt. The bi-polar RS modes are modeled in terms of the difference in the electronegativity of the top and bottom electrodes.     

微型平面复合薄膜电爆炸开关的设计和研究

开关技术是影响爆炸箔起爆系统可靠作用、微型化、低能化、集成化的关键技术。电爆炸平面开关是利用强脉冲电流使触发极金属桥箔发生电爆炸,产生高温高压等离子体,使爆炸桥区两侧的电极导通。基于微加工技术,采用Al/CuO复合薄膜材料作为触发电极,设计制造了微型平面复合薄膜电爆炸开关。采用扫描电子显微镜、差示扫描量热法和光谱谱线测温研究了触发极Al/CuO复合薄膜的形貌、反应性和电爆炸等离子体温度,通过放电电流测试研究了开关性能。结果表明,在主回路电压2000 V时,开关输出电流峰值约为1938 A,上升时间390 ns,性能优于仅以铜薄膜为触发电极的电爆炸平面开关。     

Interaction of light with acoustic waves excited by an inphase multielement transducer in the 1.0–2.5 GHz range

Interaction between a weakly divergent optical beam and an acoustic wave generated in the range 1.0–2.5 GHz by an inphase multielement electroacoustic piezoelectric transducer is analyzed. A piezoelectric (Y + 36°)-cut LiNbO₃ plate is fixed on the surface of an X-cut LiNbO₃ acoustic duct with the help of metallic sublayers (Cr, Cu, In, Cu, or Cr). The inphase structure of the transducer is formed by the upper electrodes inter-connected by short conductors. The signal is applied through a coaxial Chebyshev transformer. The efficiencies of electroacoustic conversion and acoustooptic interaction are calculated as functions of frequency. The experimental setup, method, and results are described.