Effect of electron irradiation on the structure and properties of the MgB2 superconductor

This paper reports on the results of an investigation into the effect of irradiation of the Bardeen-Cooper-Schriefer superconductor MgB₂ by electrons with a mean energy ē ～ 10 MeV at low doses (0 ≤ Φt ≤ ～5 × 10¹⁶ cm^?2) on the lattice parameters, the intensity and width of diffraction lines, the superconducting transition temperature T _c , and the temperature dependence of the resistivity ρ(T) in the normal state. The results of structural investigations have revealed regularities in the defect formation in the magnesium and boron sublattices of the MgB₂ compound as a function of the electron fluence. At the initial stage, irradiation leads to the formation of vacancies, originally in the magnesium sublattice and then in the boron sublattice. For fluences Φt ≥ ～1 × 10¹⁶ cm^?2, vacancies are formed in both sublattices. The evolution of the electrical and physical properties [T _c , ρ_{273 K}, residual resistivity ratio RRR = ρ_{273 K}/ρ_{50 K}, parameters of the dependence ρ(T)] under electron irradiation is in agreement with the regularities revealed in the formation of radiation-induced defects in the crystal lattice of the MgB₂ compound.     

Comment on the intensity and the temperature dependence of the nitrogen-broadened half-width of the P(6) line in the CO fundamental

The recent line-center absorption coefficient measurements on the P(6) line of the CO fundamental have been shown to be consistent with S_v(T) = 273(273/T)cm^-2atm^-1 and γ⁰(T) = 0.0652(300/T)^0.66 for the absolute intensity of the band and the nitrogen-broadened line width in the temperature range 300–800°K.     

Electrical resistivity and magnetoresistance of nonuniformly mechanically strained films (30 nm) of the La0.67Ca0.33MnO3 manganite

The structure, electrical resistivity, and magnetoresistance of predominantly oriented La_0.67Ca_0.33MnO₃(30 nm)/LaAlO₃ films are investigated after partial relaxation of biaxial mechanical stresses. The negative magnetoresistance MR of the films reaches a maximum at T = 235–240 K. The full width at half-maximum of the peak in the curve MR(T) for a film is five to six times greater than that for a manganite layer grown on a substrate with a small lattice mismatch. For T < 150 K, the temperature dependence of the electrical resistivity ρ of the films is fitted well by the relationship ρ = ρ₀ + ρ₁ (H)T ^4.5, where ρ₀ ≡ ρ(T = 4.2 K) and ρ₁(H) is a parameter that is independent of temperature but dependent on the magnetic field H. The parameter ρ₁(H = 0) for the La_0.67Ca_0.33MnO₃(30 nm)/LaAlO₃ films is several times larger than that for thin manganite layers only weakly strained by the substrate. The electrical resistivity ρ₁ decreases almost linear as the quantity μ₀ H increases in the field range 1–5 T.     

Galvanomagnetic properties of La0.7Sr0.3Mn0.9Cu0.1O3

La_0.7Sr_0.3Mn_0.9Cu_0.1O₃ ceramic samples have been obtained by the conventional method of the solid-phase reaction, and their resistivity ρ has been investigated in a temperature range from 50 to 300 K in magnetic fields B = 0–20 T. Dependences are typical of perovskite manganites with a maximum at T _max = 140–150 K and an increase in ρ near T _max with increasing external magnetic field B. It has been established that the behavior of resistivity is caused by the variable range hopping conduction mechanism ρ(T) = ρ₀(T)exp[(T ₀/T)^1/4], where ρ₀(T) ～ T ^25/4. The Mott variable range hopping conduction has been observed below the Curie temperature for La_0.7Sr_0.3Mn_0.9Cu_0.1O₃ samples (T _C ～ 300 K) in a temperature range from 300 to 200 K. The influence of Cu doping on the properties of La_0.7Sr_0.3MnO₃ samples is apparently caused by an additional distortion introduced into the crystal lattice of the material and by a weakening of the double-exchange mechanism.     

Effect of temperature and magnetic field on the evolution of a vortex structure of the granular YBa2Cu3O7 − δ high-temperature superconductor

The temperature dependences of the electrical resistivity ρ(T) _{H = const} have been measured in external magnetic fields H _ext (0 ≤ H _ext ≤ 1420 Oe) at temperatures ranging from 70 to 273 K for samples of the granular YBa₂Cu₃O_{7 ? δ} high-temperature superconductor (HTSC). Cooling of the samples to the minimum temperature T _min (70 K) has been performed in external magnetic fields (FC mode) and in the absence of a magnetic field (ZFC mode). Moreover, the dependences ρ(T) _{H = 0} for samples cooled in the FC mode have been measured in a zero field. The curves ρ(T)H = const have been converted into isotherms of the magnetore-sistance ρ(H _ext) _{T = const}. A comparative analysis of the specific features in the behavior of the curves ρ(H) _{T = const} for samples with different “magnetic prehistories” has made it possible to elucidate the nature and mechanisms of the influence of the particular scenario of the magnetic treatment of granular HTSCs on the behavior of their galvanomagnetic properties. The temperature dependences of the critical magnetic fields of superconducting grains (H _c1g , H _c2g ) and Josephson weak links (H _c2J ) have been determined, and the H-T phase diagrams of granular YBa₂Cu₃O_{7 ? δ} HTSCs have been recovered.     

Effect of lateral tensile stresses on the low-temperature electrical resistivity and magnetoresistance of La0.67Ca0.33MnO3 nanofilms

The thickness of the buffer layer of strontium titanate introduced between an La_0.67Ca_0.33MnO₃ manganite film and a (001)La_0.29Sr_0.71Al_0.65Ta_0.35O₃ substrate is varied (d ₁ = 7–70 nm) to influence effective misfit m in their lattice parameters. As m increases, electrical resistivity ρ of the film increases sharply and the maximum in the ρ(T) dependence shifts toward low temperatures. At T < 150 K, the temperature dependence of ρ of the manganite film obeys the relationship ρ = ρ₁ + ρ₂ T ^4.5, where parameter ρ₁ is independent of the temperature and magnetic field. Coefficient ρ₂ decreases with increasing magnetic field and increases with the misfit between the lattice parameters of the film and substrate, i.e., when the effective hole concentration in the manganite layer decreases.     

Measurements of intensities and nitrogen-broadened linewidths in the CO fundamental at low temperatures

Intensities and nitrogen-broadened half-widths of lines R(0), R(8) and R(16) in the fundamental band of ¹²C¹⁶O have been measured at 83°K, 100°K, 150°K, 200°K and 298°K. The intensities of several other lines in the P- and R-branches of the band have also been measured at 298°K. The absolute intensity derived from the line intensity data using the Herman-Wallis formula is S^°_v = 273 ± 10 cm^-2atm^-1 at S.T.P. A separate measurement employing the Wilson-Wells-Penner-Weber method has yielded S^°_v = 277 ± 4 cm^-2 atm^-1 at S.T.P. Both of these values are within 6 per cent of most of the previously published direct measurements of this parameter. The values for the line intensities reported earlier by other authors are lower by nearly 16 per cent.     

Variable-range hopping conduction in LaMnO<Subscript>3 + δ</Subscript>

The temperature dependence of the electrical resistivity ρ(T) for ceramic samples of LaMnO_{3 + δ} (δ = 0.100–0.154) are studied in the temperature range T = 15–350 K, in magnetic fields of 0–10 T, and under hydrostatic pressures P of up to 11 kbar. It is shown that, above the ferromagnet-paramagnet transition temperature of LaMnO_{3 + δ}, the dependence ρ(T) of this compound obeys the Shklovskii-Efros variable-range hopping conduction: ρ(T) = ρ₀(T)exp[(T ₀/T)^1/2], where ρ₀(T) = AT ^9/2 (A is a constant). The density of localized states g(?) near the Fermi level is found to have a Coulomb gap Δ and a rigid gap γ(T). The Coulomb gap Δ assumes values of 0.43, 0.46, and 0.48 eV, and the rigid gap satisfies the relationship γ(T) ≈ γ(T _v)(T/T _v)^1/2, where T _v is the temperature of the onset of variable-range hopping conduction and γ(T _v) = 0.13, 0.16, and 0.17 eV for δ = 0.100, 0.125, and 0.154, respectively. The carrier localization lengths a = 1.7, 1.4, and 1.2 Å are determined for the same values of δ. The effect of hydrostatic pressure on the variable-range hopping conduction in LaMnO_{3 + δ} with δ = 0.154 is analyzed, and the dependences Δ(P) and γ_v(P) are obtained.     

Current-conducting properties of paper consisting of multiwall carbon nanotubes

Electrical conductivity σ(T) of the paper consisting of multiwalled carbon nanotubes (MWCNTs) is studied in the temperature range 4.2-295 K, and its magnetoresistivity ρ(B) at various temperatures in magnetic fields up to 9 T is analyzed. The temperature dependence of the paper electrical conductivity σ(T) exhibits two-dimensional quantum corrections to the conductivity below 10 K. The dependences of negative magnetoresistivity ρ(B) measured at various temperatures are used to estimate the wavefunction phase breakdown length L _φ of conduction electrons and to obtain the temperature dependence L _φ = constT ^?p/2, where p ≈ 1/3. Similar dependences of electrical conductivity σ(T), magnetoresistivity ρ(B), and phase breakdown length L _φ(T) are detected for the initial MWCNTs used to prepare the paper.     

Magnetoresistance of La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films grown on a substrate with low lattice mismatch

The structure, electrical resistivity, and magnetoresistance of La_0.67Sr_0.33MnO₃ heteroepitaxial films (120-nm thick) practically unstrained by lattice mismatch with the substrate were studied. A strong maximum of negative magnetoresistance of ≈27% (for μ₀H = 4 T) was observed at T ≈360 K. While the magnetoresistance decreased monotonically in magnitude with decreasing temperature, it was still in excess of 2% at 150 K. For T < 250 K, the temperature dependence of the electrical resistivity ρ of La_0.67Sr_0.33MnO₃ films is fitted well by the relation ρ = ρ₀ + ρ ₁(H)T^2.3, where ρ₀ = 1.1×10^?4 Ω cm, ρ₁(H = 0) = 1.8×10^?9 Ω cm/K^2.3, and ρ₁(μ₀H = 4 T)/ρ₁(H = 0) ≈0.96. The temperature dependence of a parameter γ characterizing the extent to which the electrical resistivity of the ferromagnetic phase of La_0.67Sr_0.33MnO₃ films is suppressed by a magnetic field (μ ₀H = 5 T) was determined.     

Magnetoresistance in dilute p‐Si/SiGe in parallel and tilted magnetic fields

We report the results of an experimental study of the magnetoresistance ρ_xx and ρ_xy in two samples of p‐Si/SiGe with low carrier concentrations p = 8.2 × 10¹⁰ cm^‐2 and p = 2 × 10¹¹ cm^‐2. The research was performed in the temperature range of 0.3–2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two‐dimensional (2D) channel plane. The large in‐plane magnetoresistance can be explained by the influence of the in‐plane magnetic field on the orbital motion of the charge carriers in the quasi‐2D system. The measurements of ρ_xx and ρ_xy in the tilted magnetic field showed that the anomaly in ρ_xx, observed at filling factor ν = 3/2 is practically nonexistent in the conductivity σ_xx. The anomaly in σ_xx at ν = 2 might be explained by overlapping of the levels with different spins 0 ↑ and 1 ↓ when the tilt angle of the applied magnetic field is changed. The dependence of g‐factor g^*(Θ)/g^*(0⁰) on the tilt angle Θ was determined.     

Suppression of superconductivity in YNi2B2C at the atomic disordering

The behavior of the electrical resistivity ρ(T), the superconducting transition temperature T _c , and the upper critical field H _c2(T) of a polycrystalline sample of YNi₂B₂C irradiated by thermal neutrons with the subsequent high-temperature isochronous annealing in the temperature interval T _ann = 100–1000°C has been studied. It has been found that the irradiation of YNi₂B₂C with a fluence of 10¹⁹cm^?2 leads to the suppression of the superconductivity. The final disordered state is reversible; i.e., the initial ρ(T), T _c , and H _c2(T) values are almost completely recovered upon annealing at up to T _ann = 1000°C. The quadratic dependence ρ(T) = ρ₀ + a ₂ T ² is observed for the sample in the superconducting state (T _c = 5.5?14.5 K). The coefficient a ₂ (proportional to the square of the electron mass m*) hardly changes. The form of the dependence of T _c on ρ₀ can be interpreted as the suppression of the two superconducting gaps, Δ₁ and Δ₂ (Δ₁ ～ 2Δ₂). The degradation rate of Δ₁ is about three times higher than that of Δ₂. The dependences dH _c2/dT on ρ₀ and T _c may be described by the relations for a superconductor in the intermediate limit (the coherence length ζ₀ is on the order of the electron mean free path l _tr) under the assumption of a nearly constant electron density of states on the Fermi level N(E _F). The observed behavior of T _c obviously does not agree with the widespread opinion about the purely electron-phonon mechanism of superconductivity in the compounds of this type supposing the anomalous type of superconducting pairing.     

Temperature-dependent light scattering from magnetic excitons in TlCoF3

Raman spectra of antiferromagnetic thallium cobaltous fluoride have been obtained with 4579A argon ion laser excitation at temperatures from 4°K to T_N = 94 ± 2°K. The features observed consist of six Co²⁺ excitons ranging in energy from 325 to 1070 cm^-1, at two-magnon peak with low-temperature energy of 315 cm^-1, and a one-magnon feature whose 4°K energy is 37 cm^-1. The energy and linewidth of the one-magnon scattering has been measured from 4°K to about 0.8 T_N; it is found that the magnon becomes critically damped at about 0.8 T_N, in good agreement with our previous observations on RbCoF₃. The Co²⁺ excitons observed at 325, 380, 410, 730 (weak), 960, and 1070 cm^-1 agree in energy quite well with the KCoF₃ levels calculated by Buyers, Holden et al. as 340, 400, 467, 767, 967 and 1050 cm^-1.     

Quadrupole interaction in In0.95 Ag0.045 Ga0.005 alloy

The temperature dependence of the quadrupole interaction of¹¹¹Cd in the In_0.95 Ag_0.045 Ga_0.005 alloy is determined by the time differential perturbed angular correlation method from 77 to 422 K. The electric field gradients produced by the lattice are derived. The temperature dependence of the electric field gradient is found to follow theT ^3/2 law observed in In between 77 K and room temperature and to deviate from it at higher temperatures. The widths of the electric field gradient distribution are 0.1147(259), 0.0924(340), 0.4954(601) and 1.344(175) at 77, 298, 373 and 422 K, respectively. This illustrates that the alloy is well ordered at 77 and 298 K and that it becomes less ordered at 373 and 422 K.     

Shock-tube study of HCN self-broadening and broadening by argon for the P(10) line of the ν1 band at 3 μm

A tunable infrared diode laser was used to measure the fully resolved absorption line shape of the P(10) line in the ν₁ band (10°0–00°0) of HCN for shock-heated mixtures of HCN-Ar at temperatures of 1000, 1500 and 2000 K. The temperature dependence of the collision-broadening coefficients 2γ (cm^-1 atm^-1, FWHM) were inferred for both self-broadening and broadening by argon. For the assumed form 2γ = 2γ₀(T₀/T)ⁿ the exponent n was determined to be 0.63 ± 0.06 with 2γ₀ = 0.11 cm^-1atm^-1 and T₀ = 300 K for argon-broadening in the range 300 < T < 2000 K, and 1.2 ± 0.6 with 2γ₀ = 0.68 cm^-1atm^-1 and T₀ = 1000 K for self-broadening in the range 1000 < T < 2000 K.     

Magnetoresistance hysteresis of granular YBa2Cu3O7−δ high-temperature superconductor in weak magnetic fields

The variation of the transverse magnetoresistance of YBa₂Cu₃O_～6.95 high-temperature superconducting ceramic with external magnetic field intensity H _ext first increasing from zero to ～500 Oe (Δρ⁺ / ρ_{273 K}) and then decreasing from about 500 Oe to zero (Δρ^? / ρ_{273 K}) is studied for transport current densities varying from j/j _c ≈ 0.01 to ≈0.99 (where j _c is the critical current density in the absence of the magnetic field) at 77.3 K. It is found that the field dependence of the magnetoresistance of YBa₂Cu₃O_～6.95 high-temperature superconductor is characterized by pronounced hysteresis, the difference Δρ⁺ / ρ_{273 K} ? Δρ^? / ρ_{273 K} increasing with j/j _c. As j/j _c grows, the effective critical fields of Josephson weak links, H _c2J , and the lower critical fields of superconducting grains, H _c1A , decline. When field H _ext rises, the critical fields are lower than when H _ext diminishes: H _c2J ⁺ < H _c2J ^? and H _c1A ⁺ < H _c1A ^? .     

Adsorption and decomposition of methyl iso-cyanide on Pt(111)

CH₃NC adsorption and thermal decomposition on a Pt(111) surface has been studied by high resolution EEL and TD spectroscopies. At 90 K, CH₃NC adsorbs initially in a terminal-bonded configuration characterized by a blue-shifted iso-cyanide stretch at 2265-2240 cm^?1. At higher coverages this form co-exists with a second form characterized by an imine-like stretch at 1600–1770 cm^?1, increasing with coverage. This form is associated with bridge bonding to adjacent surface platinum atoms. Adsorption is irreversible and. except for multilayer desorption at 135 K, only reaction-limited H₂ (T_p = 440–460 K) andHCN (T_p = 420–610 K) desorption and. at high coverages, isomerization to CH₃CN (T_p = 430 K) was seen. EEL spectra recorded after heating the adsorbed layer indicated that at lower coverages, the molecular integrity of the adsorbed CH₃NC was completely lost before dehydrogenation occurred. On the other hand, at saturation structural changes in the adsorbed layer corresponded firstly to the onset of dehydrogenation and then. at higher temperatures, to HCN evolution. No spectroscopic evidence for an η²-bonding configuration was found either at low temperatures or during thermal decomposition. The terminal- and bridged-bonded configurations adopted by CH₃NC have been compared and contrasted with those found with the isoelectronic CO and the isomeric CH₃CN by reference to the chemically important frontier orbitals of these ligand molecules.     

Temperature dependence of Mn2+ EPR in Sn2P2S6 near the phase transition

The X-band EPR spectrum of Mn²⁺ in Sn₂P₂S₆ was studied in the temperature rangeT=223–363 K. At room temperature the spin-Hamiltonian constants areg=2.00±0.01,B ₂ ⁰ =(163±3)·10^?4 cm^?1,B ₂ ² =(159±3)·10^?4 cm^?1,A=?(75±1)·10^?4 cm^?1. The effect of the invariance in temperature of the resonance magnetic fields in the narrow temperature rangeT=337–340 K and the model of the paramagnetic centre are discussed. According to EPR data a phase transition occurs atT=337 K. This transition from the paraelectric phase to the ferroelectric one is accompanied by a dramatic change in value of the spin-Hamiltonian constantB ₂ ⁰ .     

1D-3D crossover in hopping conduction of carbynes

D.C. and A.C. conductivities of carbyne samples were studied over the temperature range 1.8–300 K at frequencies 10 MHz–1 GHz. It was established that a variation in the fraction of sp ² bonds in carbynes induces transition from one-to two-and then to three-dimensional conduction. In the one-dimensional hopping conduction regime, the resistivity of carbynes depends on temperature as ρ=ρ₀exp[(T ₀/T)^1/2], whereas Coulomb correlations are insignificant. The Hunt model of one-dimensional A.C. conductivity is experimentally confirmed.