Transport and magnetic properties of multiwall carbon nanotubes before and after bromination

Bulk samples of oriented carbon nanotubes were prepared by electric arc evaporation of graphite in a helium environment. The temperature dependence of the conductivity σ(T), as well as the temperature and field dependences of the magnetic susceptibility χ(T, B) and magnetoresistance ρ(B, T), was measured for both the pristine and brominated samples. The pristine samples exhibit an anisotropy in the conductivity σ_∥(T)/σ_⊥>50, which disappears in the brominated samples. The χ(T, B) data were used to estimate the carrier concentration n ₀ in the samples: n _0ini ～3×10¹⁰ cm^?2 for the pristine sample, and n _0Br～10¹¹ cm^\t—2 for the brominated sample. Estimation of the total carrier concentration n=n _e+n _p from the data on ρ(B, T) yields n _ini=4×10¹⁷ cm^?3 (or 1.3×10¹⁰ cm^?2) and n _Br=2×10¹⁸ cm^?3 (or 6.7×10¹⁰ cm^?2). These estimates are in good agreement with one another and indicate an approximately fourfold increase in carrier concentration in samples after bromination.     

Thermal conductivity of high-porosity biocarbon precursors of white pine wood

This paper reports on measurements of the thermal conductivity κ and the electrical conductivity σ of high-porosity (cellular pores) biocarbon precursors of white pine tree wood in the temperature range 5–300 K, which were prepared by pyrolysis of the wood at carbonization temperatures (T _carb) of 1000 and 2400°C. The x-ray structural analysis has permitted the determination of the sizes of the nanocrystallites contained in the carbon framework of the biocarbon precursors. The sizes of the nanocrystallites revealed in the samples prepared at T _carb = 1000 and 2400°C are within the ranges 12–35 and 25–70 Å, respectively. The dependences κ(T) and σ(T) are obtained for samples cut along the tree growth direction. As follows from σ(T) measurements, the biocarbon precursors studied are semiconducting. The values of κ and σ increase with increasing carbonization temperature of the samples. Thermal conductivity measurements have revealed that samples of both types exhibit a temperature dependence of the phonon thermal conductivity κ_ph, which is not typical of amorphous (and amorphous to x-rays) materials. As the temperature increases, κ_ph first varies proportional to T, to scale subsequently as ～T ^1.7. The results obtained are analyzed.     

Thermal conductivity of high-porosity cellular-pore biocarbon prepared from sapele wood

This paper reports on measurements (in the temperature range T = 5–300 K) of the thermal conductivity κ(T) and electrical conductivity σ(T) of the high-porosity (～63 vol %) amorphous biocarbon preform with cellular pores, prepared by pyrolysis of sapele wood at the carbonization temperature 1000°C. The preform at 300 K was characterized using X-ray diffraction analysis. Nanocrystallites 11–30 Å in ize were shown to participate in the formation of the carbon network of sapele wood preforms. The dependences κ(T) and σ(T) were measured for the samples cut across and along empty cellular pore channels, which are aligned with the tree growth direction. Thermal conductivity measurements performed on the biocarbon sapele wood preform revealed a temperature dependence of the phonon thermal conductivity that is not typical of amorphous (and X-ray amorphous) materials. The electrical conductivity σ was found to increase with the temperature increasing from 5 to 300 K. The results obtained were analyzed.     

Modification of the CVD-graphene resistivity by post-processing sample annealing

In this paper, we present the results of an additional annealing effect on the temperature dependences of the resistivity for CVD-graphene samples of a large area. We found that an annealing in a Ar/H₂ mixture at different temperatures modifies both the value of the resistivity and the slope of its temperature dependence. The annealing effect on the resultant sample quality depends on the type of the ρ(T) dependence for the initial sample. For samples with a metallic-like ρ(T) dependence, a low-temperature annealing (at T = 250 °C) results in a slight decrease in the resistivity value and an increase of the ρ(T) curve slope. Increasing the annealing temperature up to T = 400 °C leads to a stronger increase in the ρ(T) curve slope but to an increase in the resistivity value. For samples with a semiconductor-like ρ(T) dependence, increasing the annealing temperature up to T = 750 °C results in a gradual suppression of the activation character of the resistivity behavior at low temperatures. The additional annealing is concluded to be accompanied by two processes: a cleaning of the graphene surface from adsorbed contaminations and an additional defect formation in the graphene structure. A relative role of these processes in dependence on the annealing temperature and the type of the ρ(T) dependence for the initial sample is discussed.     

Galvanomagnetic properties of atomically disordered Sr<Subscript>2</Subscript>RuO<Subscript>4</Subscript> single crystals

The effect of neutron-bombardment-induced atomic disorder on the galvanomagnetic properties of Sr₂RuO₄ single crystals has been experimentally studied in a broad range of temperatures (1.7–380 K) and magnetic fields (up to 13.6 T). The disorder leads to the appearance of negative temperature coefficients for both the in-plane electric resistivity (ρ_a) and that along the c axis (ρ_c), as well as the negative magnetoresistance Δρ, which is strongly anisotropic to the magnetic field orientation (H ∥ a and H ∥ c), with the easy magnetization direction along the c axis and a weak dependence on the probing current direction in the low-temperature region. The experimental ρ_a(T) and ρ_c(T) curves obtained for the initial and radiation-disordered samples can be described within the framework of a theoretical model with two conductivity channels. The first channel corresponds to the charge carriers with increased effective masses (～10m _e , where m _e is the electron mass) and predominantly electron-electron scattering, which leads to the quadratic temperature dependences of ρ_a and ρ_c. The second channel corresponds to the charge carriers with lower effective masses exhibiting magnetic scattering at low temperatures, which leads to the temperature dependence of the ρ_{a, c}(T) ∝ 1/T type.     

Effect of ionizing radiation on the dielectric characteristics of TlInS2 and TlGaS2 single crystals

The dependences of the permittivity and electrical conductivity of TlInS₂ and TlGaS₂ single crystals on the temperature and electron beam irradiation dose have been studied. It has been established that, as the electron irradiation dose increases, the electrical conductivity σ significantly increases, whereas the permittivity ? decreases over the entire temperature range covered (80–320 K). It has been shown that anomalies in the form of maxima in the temperature dependences σ(T) and ?(T) are observed in the regions characteristic of phase transitions in TlInS₂. Irradiation of the TlInS₂ and TlGaS₂ crystals with electrons to doses of 10¹⁵ and 10¹⁶ cm^?2 does not affect their phase transition temperatures. The dispersion curves of the permittivity ? of the TlGaS₂ crystal have been constructed.     

Transport phenomena in metal nanocomposites

Ferromagnetic nanocomposites are the special case of metal composites; they are of practical interest for spintronics. Temperature dependences of resistivity ρ(T) and thermoelectric power α(T) of ferromagnetic nanocomposites with the composition Co _x (Al₂O₃)_{100 ? x} (36.6 ≤ x ≤ 52.5 at %) are investigated near the percolation threshold (x _p ≈ 43.3 at %) in a temperature range of 77–300 K. Sizes of Co nanoparticles are no larger than 25 nm. Specific features are observed in the dependences α(T) in the form of a kink at T _b ≈ 170 K. The analysis of the structural and electrical schematics as well as energy diagrams of percolation channels of electrons shows that only the diffusion thermoelectric power appears in Co nanoparticles, at which α(T) is the linear function. No mechanisms of the thermoelectric power caused by nanosizes of Co particles or by electron tunneling between them are found. The kink of the α(T) linear dependence is explained by the existence of the oxide shell of Co nanoparticles. It is assumed that the temperature dependences of energy barriers of oxide shells of metal nanoparticles (including ferromagnetic ones) in oxygen-containing dielectric matrices determine the features of α(T) and ρ(T) dependences of such nanocomposites.     

The role of specific features of the electronic structure in electrical resistivity of band ferromagnets Co<Subscript>2</Subscript>Fe<Emphasis Type="Italic">Z</Emphasis> (<Emphasis Type="Italic">Z</Emphasis> = Al,Si, Ga,Ge, In,Sn, Sb)

The electrical resistivity ρ(T) of the band ferromagnets Co₂FeZ (where Z = Al, Si, Ga, Ge, In, Sn, and Sb are s- and p-elements of Mendeleev’s Periodic Table) has been investigated in the temperature range 4.2 K < T < 1100 K. It has been shown that the dependences ρ(T) of these alloys in a magnetically ordered state at temperatures T < T _C are predominantly determined by the specific features of the electronic spectrum in the vicinity of the Fermi level. The processes of charge carrier scattering affect the behavior of the electrical resistivity ρ(T) only in the vicinity of the Curie temperature T _C and above, as well as in the low-temperature range (at T ? T _C).     

Change in the lattice properties and melting temperature of a face-centered cubic iron under compression

All four parameters of the Mie–Lennard-Jones pair interatomic potential have been determined, and the state equation (P) and baric dependences of the lattice properties of an fcc iron are calculated using a previously proposed method. The dependences have been studied for the following properties: Debye temperature; the first, second, and third Gruneisen parameters; isothermal bulk modulus B _T and B′(P); isochoric specific heat C _v and C _v ′(P); isobaric specific heat C _p ; coefficient of thermal expansion α _p and α _p ′(P); specific surface energy σ and σ′(P). Calculations performed along two isotherms (1500 and 3000 K) have shown good agreement with the experimental data. Analytical approximations of the baric dependences for B′(P), α _p (P), C _p (P), and σ′(P) have been obtained, and it is shown that at P → ∞ the functions B _T (P) and σ(P) change linearly, while the functions α _p′(P) and C _p ′(P) tend to zero. The calculated baric dependence of the melting temperature shows good agreement with the experimental data.     

Nonmonotonic temperature dependence of the Hall resistance of a 2D electron system in silicon

For a 2D electron system in silicon, the temperature dependence of the Hall resistance ρ_xy(T) is measured in a weak magnetic field in the range of temperatures (1–35 K) and carrier concentrations n where the diagonal resistance component exhibits a metallic-type behavior. The temperature dependences ρ_xy(T) obtained for different n values are nonmonotonic and have a maximum at T_max ～ 0.16T_F. At lower temperatures T < T_max, the change δρ_xy(T) in the Hall resistance noticeably exceeds the interaction quantum correction and qualitatively agrees with the semiclassical model, where only the broadening of the Fermi distribution is taken into account. At higher temperatures T > T_max, the dependence ρ_xy(T) can be qualitatively explained by both the temperature dependence of the scattering time and the thermal activation of carriers from the band of localized states.     

Electrical conductivity and dielectric properties of β-BaB<Subscript>2</Subscript>O<Subscript>4</Subscript> crystal in the temperature range 90–300 K

The electrical conductivity σ and dielectric properties (?, tanδ) of β-BaB₂O₄ were studied in the temperature range 90–300 K. The quantities σ, ?, and tanδ were measured at frequencies of 0.1, 1, and 10 kHz and 1 MHz. The dielectric permittivity and electrical conductivity were found to grow with increasing temperature at all frequencies. The permittivity decreases and the electrical conductivity increases (by several orders of magnitude) with increasing frequency. Maxima were observed in the σ=f(T) and tanδ=f(T) curves for all frequencies; the maxima shift toward higher temperatures with increasing frequency.     

Low-Temperature Transport Properties of Lanthanum Hexaboride La<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>Ce<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>B<Subscript>6</Subscript> Single Crystals

Resistivity (ρ), thermal conductivity (k) and Seebeck coefficient (S) of La_1–xCe_xB₆ single crystals with various concentrations of cerium Ce ions was measured in a wide temperature range 3?300 K. The obtained data were analyzed in the framework of the Coqblin–Shrieffer model. The contributions of scattering of carriers on magnetic ions Ce for all transport parameters ρ(T), k(T), S(T) are revealed. Strong dependence of the magnetic scattering on concentration of the cerium ions are identified. The anomalous behavior of the transport parameters ρ(T), k(T), S(T) in the region near 30 K is attributed to the Δ ~ 30 K splitting of Г₈ level.     

Anisotropy of the thermal conductivity and electrical resistivity of the SiC/Si biomorphic composite based on a white-eucalyptus biocarbon template

The thermal conductivity κ and electrical resistivity ρ of a cellular ecoceramic, namely, the SiC/Si biomorphic composite, are measured in the temperature range 5–300 K. The SiC/Si biomorphic composite is fabricated using a cellular biocarbon template prepared from white eucalyptus wood by pyrolysis in an argon atmosphere with subsequent infiltration of molten silicon into empty through cellular channels of the template. The temperature dependences κ(T) and ρ(T) of the 3C-SiC/Si biomorphic composite at a silicon content of ～30 vol % are measured for samples cut out parallel and perpendicular to the direction of tree growth. Data on the anisotropy of the thermal conductivity κ are presented. The behavior of the dependences κ(T) and ρ(T) of the SiC/Si biomorphic composite at different silicon contents is discussed in terms of the results obtained and data available in the literature.     

Specific features of electrical properties of porous biocarbons prepared from beech wood and wood artificial fiberboards

This paper reports on comparative investigations of the structural and electrical properties of biomorphic carbons prepared from natural beech wood, as well as medium-density and high-density fiberboards, by means of carbonization at different temperatures T _carb in the range 650–1000°C. It has been demonstrated using X-ray diffraction analysis that biocarbons prepared from medium-density and high-density fiberboards at all temperatures T _carb contain a nanocrystalline graphite component, namely, three-dimensional crystallites 11–14 Å in size. An increase in the carbonization temperature T _carb to 1000°C leads to the appearance of a noticeable fraction of two-dimensional graphene particles with the same sizes. The temperature dependences of the electrical resistivity ρ of the biomorphic carbons have been measured and analyzed in the temperature range 1.8–300 K. For all types of carbons under investigation, an increase in the carbonization temperature T _carb from 600 to 900°C leads to a change in the electrical resistivity at T = 300 K by five or six orders of magnitude. The dependences ρ(T) for these materials are adequately described by the Mott law for the variable-range hopping conduction. It has been revealed that the temperature dependence of the electrical resistivity exhibits a hysteresis, which has been attributed to thermomechanical stresses in an inhomogeneous structure of the biocarbon prepared at a low carbonization temperature T _carb. The crossover to the conductivity characteristic of disordered metal systems is observed at T _carb ? 1000°C.     

Effect of renormalization of magnetic fluctuations on the kinetic coefficients of high-T c superconductors

Temperature dependences of resistivity, ρ(T), and Hall coefficient, R _H (T), in a 2D doped antiferromagnet are studied for various forms of the dynamic spin susceptibility X(q, θ) (in the mean-field approximation, taking into account attenuation and renormalization of the magnetic excitation spectrum θ_q, and for so-called strongly overdamped magnons). Doped CuO₂ planes in cuprates are considered in the one-band model of the Kondo lattice. Charge carrier scattering anisotropy, which strongly depends on temperature, is taken into account using the density matrix formalism and seven-moment approximation for the nonequilibrium distribution function. It is shown that the behavior of ρ(T) and R _H (T) is completely determined by the renormalization θ_q → $\omega _q \to \tilde \omega _q $ of the spin wave spectrum (the renormalization is essentially controlled by the fulfillment of the sum rule for X(q, θ) and by the strong temperature dependence of the gap δ(T). The resultant ρ(T) and R _H (T) dependences match the experimental data for optimally doped high-T _c superconductors.     

Charge transport in a spin-polarized 2D electron system in silicon

The temperature dependences of the conductivity σ(T) of a strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in a spin-polarizing magnetic field of 14.2 T that is parallel to the sample plane. The measurements were carried out in a wide temperature range of 1.4–9 K in the ballistic regime of electron-electron interaction, i.e., for Tτ > 1. In zero magnetic field, the data obtained for σ(T) are quantitatively described by the theory of interaction corrections. In the fully spin-polarized state, the measured σ(T) dependences are not linear and even nonmonotonic in the same temperature range, where the dependences σ(T) are monotonic in the absence of the field. Nevertheless, the low-temperature parts of the experimental σ(T) dependences are linear and qualitatively consistent with the calculated quantum corrections.     

Electron transport,penetration depth,and the upper critical magnetic field in ZrB<Subscript>12</Subscript> and MgB<Subscript>2</Subscript>

We report on the synthesis and measurements of the temperature dependences of the resistivity ρ, the penetration depth λ, and the upper critical magnetic field H_c2, for polycrystalline samples of dodecaboride ZrB₁₂ and diboride MgB₂. We conclude that ZrB₁₂ behaves as a simple metal in the normal state with the usual Bloch-Grüneisen temperature dependence of ρ(T) and with a rather low resistive Debye temperature T_R = 280 K (to be compared to T_R = 900 K for MgB₂). The ρ(T) and λ(T) dependences for these samples reveal a superconducting transition in ZrB₁₂ at T_c = 6.0 K. Although a clear exponential λ(T) dependence in MgB₂ thin films and ceramic pellets was observed at low temperatures, this dependence was almost linear for ZrB₁₂ below T_c/2. These features indicate an s-wave pairing state in MgB₂, whereas a d-wave pairing state is possible in ZrB₁₂. In disagreement with conventional theories, we found a linear temperature dependence, of H_c2(T) for ZrB₁₂ (H_c2(0) = 0.15 T).     

Effect of temperature and magnetic field on the evolution of a vortex structure of the granular YBa2Cu3O7 − δ high-temperature superconductor

The temperature dependences of the electrical resistivity ρ(T) _{H = const} have been measured in external magnetic fields H _ext (0 ≤ H _ext ≤ 1420 Oe) at temperatures ranging from 70 to 273 K for samples of the granular YBa₂Cu₃O_{7 ? δ} high-temperature superconductor (HTSC). Cooling of the samples to the minimum temperature T _min (70 K) has been performed in external magnetic fields (FC mode) and in the absence of a magnetic field (ZFC mode). Moreover, the dependences ρ(T) _{H = 0} for samples cooled in the FC mode have been measured in a zero field. The curves ρ(T)H = const have been converted into isotherms of the magnetore-sistance ρ(H _ext) _{T = const}. A comparative analysis of the specific features in the behavior of the curves ρ(H) _{T = const} for samples with different “magnetic prehistories” has made it possible to elucidate the nature and mechanisms of the influence of the particular scenario of the magnetic treatment of granular HTSCs on the behavior of their galvanomagnetic properties. The temperature dependences of the critical magnetic fields of superconducting grains (H _c1g , H _c2g ) and Josephson weak links (H _c2J ) have been determined, and the H-T phase diagrams of granular YBa₂Cu₃O_{7 ? δ} HTSCs have been recovered.     

Suppression of superconductivity in YNi2B2C at the atomic disordering

The behavior of the electrical resistivity ρ(T), the superconducting transition temperature T _c , and the upper critical field H _c2(T) of a polycrystalline sample of YNi₂B₂C irradiated by thermal neutrons with the subsequent high-temperature isochronous annealing in the temperature interval T _ann = 100–1000°C has been studied. It has been found that the irradiation of YNi₂B₂C with a fluence of 10¹⁹cm^?2 leads to the suppression of the superconductivity. The final disordered state is reversible; i.e., the initial ρ(T), T _c , and H _c2(T) values are almost completely recovered upon annealing at up to T _ann = 1000°C. The quadratic dependence ρ(T) = ρ₀ + a ₂ T ² is observed for the sample in the superconducting state (T _c = 5.5?14.5 K). The coefficient a ₂ (proportional to the square of the electron mass m*) hardly changes. The form of the dependence of T _c on ρ₀ can be interpreted as the suppression of the two superconducting gaps, Δ₁ and Δ₂ (Δ₁ ～ 2Δ₂). The degradation rate of Δ₁ is about three times higher than that of Δ₂. The dependences dH _c2/dT on ρ₀ and T _c may be described by the relations for a superconductor in the intermediate limit (the coherence length ζ₀ is on the order of the electron mean free path l _tr) under the assumption of a nearly constant electron density of states on the Fermi level N(E _F). The observed behavior of T _c obviously does not agree with the widespread opinion about the purely electron-phonon mechanism of superconductivity in the compounds of this type supposing the anomalous type of superconducting pairing.     

Low-temperature thermal conductivity of terbium-gallium garnet

Thermal conductivity of paramagnetic Tb₃Ga₅O₁₂ (TbGG) terbium-gallium garnet single crystals is investigated at temperatures from 0.4 to 300 K in magnetic fields up to 3.25 T. A minimum is observed in the temperature dependence κ(T) of thermal conductivity at T _min = 0.52 K. This and other singularities on the κ(T) dependence are associated with scattering of phonons from terbium ions. The thermal conductivity at T = 5.1 K strongly depends on the magnetic field direction relative to the crystallographic axes of the crystal. Experimental data are considered using the Debye theory of thermal conductivity taking into account resonance scattering of phonons from Tb³⁺ ions. Analysis of the temperature and field dependences of the thermal conductivity indicates the existence of a strong spin-phonon interaction in TbGG. The low-temperature behavior of the thermal conductivity (field and angular dependences) is mainly determined by resonance scattering of phonons at the first quasi-doublet of the electron spectrum of Tb³⁺ ion.