Ta掺杂对ZnO光电材料性能影响的研究

采用基于密度泛函理论第一性原理的方法, 研究了Ta掺杂ZnO的电子结构和光学性质. 计算结果表明: 掺入Ta原子后, 费米能级进入导带, 随着掺杂浓度的增加, 带隙逐渐变窄, 介电函数虚部、吸收系数、反射率和折射率均发生明显变化, 介电函数虚部和反射率均向高能方向移动, 吸收边发生红移, 从理论上指出了光学性质和电子结构的内在联系.     

掺Ge锐钛矿相TiO_2光学性质的计算

合理的掺杂是改善TiO_2活性,使其光催化性能在可见光照射下发挥作用的最有效途径之一,本文利用基于密度泛函理论的第一原理全电势线性缀加平面波方法计算掺Ge锐钛矿相TiO_2介电函数的实部、虚部和光学吸收系数.计算结果显示掺Ge锐钛矿相TiO_2介电函数虚部谱发生蓝移,与实验趋势相符;通过不用剪刀算符和固定晶格常数两方案研究掺Ge前后光谱的平移,得到蓝移是由于Ge原子替代Ti原子后晶胞体积减小造成.     

介电函数虚部与电导率的关系

在明确介电函数定义及其虚部意义的基础上,比较分析函数ε'(ω)与复介电函数ε(ω)的不同,建议函数ε'(ω)不要称为"复介电函数"或"复电容率",以免与复介电函数ε(ω)混淆.     

光折变晶体KTa0.5Nb0.5O3光学特性的第一性原理研究

用全电势线性缀加平面波法(FLAPW)计算了KTa0.5Nb0.5O3四方相和立方相 的光学特性，即介电函数虚部ε２(ω)、光学吸收系数I(ω)和反射率R(ω). 在四方相，介电虚部沿a，b轴，在3，7和23eV附近，分别有三个介电峰.沿c轴的三个介电峰分别位于4，8和23eV.其中4eV附近的介电峰非常尖锐而且高.从8至18eV，沿a，b ，c轴三个方向都有许多低的介电峰.通过对两相光学特性的对比分析发现铁电相KTa0.5Nb0.5O3具有更强的各向异性. 关键词： 平面波法计算 光学常量和参数 铁电体     

N掺杂锐钛矿TiO2光学性能的第一性原理研究

用平面波赝势方法(PWP)计算了N掺杂锐钛矿型TiO2前后的光学特性,即介电函数虚部ε2(w),光学吸收系数I(w)和反射率R(w).并从能带结构上解释了为什么掺N后锐钛矿型TiO2的光学谱在2.93,3.56和3.97 eV处相对掺杂前会出现3个峰值的原因.从光谱图上分析得出,掺杂后TiO2要发生红移现象,实验现象证实了这一结果.     

铋碲掺杂对锗光学性质影响的第一性原理研究

采用密度泛函理论框架下的第一性原理平面波赝势方法研究了Bi、Te掺杂对Ge光学性质的影响.结果表明:(1) Bi单掺使介电函数虚部、吸收率、光电导率实部峰值变大且向低能方向移动;介电函数实部变小且向低能方向移动;(2) Te单掺使介电函数实部、虚部、吸收率、电导率实部峰值变小且向低能方向移动;(3)所有掺杂体系的静态介电常数都变大.这些结果为研制高性能光电器件用新型功能材料提供了理论依据.     

碳纳米管吸收电磁波特性

本文研究碳纳米管阵列的介电谱函数与吸收电磁波的特性。应用等离激元和无规相近似方法给出碳纳米管的介电谱函数,进而求出吸收系数和反射功率比。介电函数随电磁波的频率变化,在光子能量与系统电子的能谱差相匹配时产生共振吸收,吸收系数出现多个大的吸收峰。反射功率比随薄层厚度的增加而指数衰减,其衰减速率和饱和值与电磁场的频率和碳纳米管的结构有密切的联系。     

第一性原理研究Fe掺杂SnO2材料的光电性质

采用基于第一性原理的线性缀加平面波(FP-LAPW)方法,研究Fe掺杂SnO₂材料电子结构和光学性质,包括电子态密度、能带结构、介电函数和其他一些光学图谱. 研究结果表明,掺Fe后材料均属于直接跃迁半导体,且呈现半金属性;随掺杂浓度增加,费米能级进入价带,带隙逐渐减小,Fe原子之间耦合作用增强;通过掺杂能够在一定程度上改变成键性质,使其具有金属键性质. 光学谱线(吸收谱、消光系数等)与介电函数虚部谱线相对应,均发生蓝移,各峰值与电子跃迁吸收有关,从理论上指出光学性质和电子结构的内在联系. 关键词： 能带结构 态密度 光学性质 介电函数     

Al和N共掺对Zn_(1-x)Mg_xO光学性质的影响

基于密度泛函理论第一性原理方法计算了Al和N共掺对Zn1-xMgxO在紫外光波段和可见光波段光学性质的影响.计算结果表明:光学性质变化主要发生在低能区,在高能区光学性质基本保持不变.介电函数虚部、吸收光谱和消光系数计算表明,Al和N共掺后Zn1-xMgxO的光学吸收边产生红移,对部分紫外光和可见光的吸收增强.介电函数实部和反射光谱计算表明,Al和N共掺后Zn1-xMgxO的反射峰强度增大,静态介电常数ε1(0)从2.64增大为3.23.能量损失谱的计算表明,Al和N共掺后Zn1-xMgxO的等离子体共振频率发生蓝移,共振频率的振幅增大.     

热处理温度对量子点玻璃介电函数的影响

为了明确热处理温度对熔融法制备Pb Se量子点玻璃光电特性中介电函数的影响,实验上在不同核化时间、晶化温度条件下制备了多种样品。通过对样品透射电子显微镜的观测,确认样品在不同条件下都有一定量的晶体形成。由于晶化程度、晶体大小及浓度有所不同,导致其吸收光谱有一定差异。利用各个样品的吸收光谱,结合米氏散射理论和克拉默斯-克勒尼希关系,通过多次迭代运算,从吸收光谱中分离出相应的介电函数的实部和虚部,最终获得材料的吸收系数和折射率。分析表明退火温度对量子点玻璃的吸收系数和折射率分布有明显的影响,为了获得具有优良光电性能的量子点材料,退火时间和退火温度的合适选择至关重要。     

第一性原理研究霰石的电子结构和光学性质

采用线性缀加平面波方法,研究了霰行的主要成分CaCO3的电子结构和线性光学特性,结果发现,霰石的主要成分CaCO3是一种具有直接带隙4.29119 eV的化合物,在这种化合物中,C原子的2s态和O原子的2s态杂化形成了阴离子[CO3]2-,并解释了介电函数虚部主要峰的形成原因,同时计算和研究了霰石的吸收系数、能量损失系数、折射系数和湮灭系数等光学性质.     

Synthesis and optical characterization of nanocrystalline CdTe thin films

From several years the study of binary compounds has been intensified in order to find new materials for solar photocells. The development of thin film solar cells is an active area of research at this time. Much attention has been paid to the development of low cost, high efficiency thin film solar cells. CdTe is one of the suitable candidates for the production of thin film solar cells due to its ideal band gap, high absorption coefficient. The present work deals with thickness dependent study of CdTe thin films. Nanocrystalline CdTe bulk powder was synthesized by wet chemical route at pH≈11.2 using cadmium chloride and potassium telluride as starting materials. The product sample was characterized by transmission electron microscope, X-ray diffraction and scanning electron microscope. The structural characteristics studied by X-ray diffraction showed that the films are polycrystalline in nature. CdTe thin films with thickness 40, 60, 80 and 100 nm were prepared on glass substrates by using thermal evaporation onto glass substrate under a vacuum of 10⁻⁶ Torr. The optical constants (absorption coefficient, optical band gap, refractive index, extinction coefficient, real and imaginary part of dielectric constant) of CdTe thin films was studied as a function of photon energy in the wavelength region 400–2000 nm. Analysis of the optical absorption data shows that the rule of direct transitions predominates. It has been found that the absorption coefficient, refractive index (n) and extinction coefficient (k) decreases while the values of optical band gap increase with an increase in thickness from 40 to 100 nm, which can be explained qualitatively by a thickness dependence of the grain size through decrease in grain boundary barrier height with grain size.     

First-principles study of structural, optical and elastic properties of cubic HfO2

The structural, optical and elastic properties of cubic HfO₂ were studied using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT). The ground-state properties such as lattice parameter and bulk modulus were calculated and these results are in favorable agreement with the previous work. The complex dielectric function, refractive index, extinction coefficient, complex conductivity function, energy-loss spectrum, absorption coefficient and optical reflectivity are calculated and the peak position distributions of imaginary parts of the complex dielectric function have been explained. The calculated elastic properties are consistent with other calculated results.     

Theoretical studies on the structural, electronic, and optical properties of Ag2HgSnSe4

We investigate the electronic structure of Ag₂HgSnSe₄ in a wurtzite-stannite structure with the first principles method. This crystal is a direct band-gap compound. In addition the dielectric function, absorption coefficient, reflectivity, and energy-loss function are studied using the density functional theory in the generalized gradient approximation. We discuss the optical transitions between the valence bands and the conduction bands in the spectrum of the imaginary part of the dielectric function at length. We also find a very high absorption coefficient and a wide absorption band for this material. The prominent structures in the spectra of reflectivity and the energy-loss function are discussed in detail.     

Theoretical studies on the structural, electronic, and optical properties of Cu2CdGeSe4

We investigate the electronic structure for Cu₂CdGeSe₄ in stannite structure with the first-principles method. This crystal is the direct band gap compound. In addition, the dielectric function, absorption coefficient, reflectivity, and energy-loss function are studied using the density functional theory within the generalized gradient approximation. We discuss the optical transitions between the valence bands and the conduction bands in the spectra of the imaginary part of the dielectric function at length. We also find a very high absorption coefficient and wide absorption spectrum for this material. The prominent structures in the spectra of reflectivity and energy-loss function are discussed in detail.     

Bi掺杂ZnO光电性能的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法,利用Material studio程序包中的Castep模块计算研究不同浓度Bi原子掺杂对ZnO电子结构和光学性能的影响.研究表明：不同Bi原子数的掺杂,对ZnO禁带宽度影响的变化趋势不一致.Bi掺杂ZnO的介电函数虚部峰值变大,并向低能量方向红移;高能量区域的吸收峰、反射峰和能量损耗峰随着掺杂原子的增多逐渐减小,透光性增强.掺杂样品在可见光和紫外光的吸收系数和反射系数均显著提高,可促进ZnO材料对可见光的有效利用.     

First-principles studies on the electronic and optical properties of CuAlSe2 and CuAl5Se8

The electronic structure, dielectric function, absorption coefficient, and reflectivity of two polycrystalline semiconductors CuAlSe₂ and CuAl₅Se₈ are studied using the density functional theory within the generalized gradient approximation. There are different peaks in the spectra of the imaginary part of the dielectric function. The transitions between the valence bands and conduction bands are discussed at length. In addition, we also notice that the reduced absorption coefficient and reflectivity near band-edge in Cu-poor CuAlSe₂ are closely related to a reduction of the density of states near the valence band maximum.     

Optical band gap and optical constants in a-Se80Te20−xPbx thin films

The optical constants (absorption coefficient, refractive index, extention coefficient, real and imaginary part of dielectric constant) have been studied for a-Se₈₀Te_20−xPb_x (where x = 0, 2, 6, 10) thin films as a function of photon energy in the wave length range (500–1000 nm). It has been found that the optical band gap increases while the refractive index and the extinction coefficient (k) decreases on incorporation of lead in Se–Te system. The value of absorption coefficient (α) and the extinction coefficient (k) increases, while the value of refractive index (n) decreases with incident photon energy. The results are interpreted in terms of the change in concentration of localized states due to the shift in fermi level.