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分析了二维光子晶体马赫-曾德尔干涉仪的传输特性,将二维光子晶体波导、环形腔和马赫-曾德尔干涉仪有效结合,提出了一种基于二维光子晶体马赫-曾德尔干涉仪的异或门设计。用平面波展开法分析二维光子晶体能带结构,并用时域有限差分法验证光信号在该器件中的电场稳态分布。结果表明,该结构能够实现异或逻辑,且具有高逻辑对比度7.88 dB,快速响应周期0.388 ps和高传输速率7.87 Tbit/s;并且该器件结构尺寸仅为13 μm×14 μm,易于集成。该异或逻辑结构中引入了二维光子晶体马赫-曾德尔干涉仪,使得光子晶体逻辑门结构的设计更加多样,并为二维光子晶体半加器与全加器的设计提供了基础,具有重要的研究意义。 相似文献
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提出了一种基于双通道马赫曾德尔调制器(DPMZM)调制边带滤波的微波光子移相器。在双通道马赫曾德尔调制器的结构中,在一路马赫曾德尔干涉仪上实现抑制光载波的双边带调制输出,而在另一路马赫曾德尔的相位调节臂上通过调节偏置电压实现光载波信号的光学移相,两路光信号经过干涉合路后由光纤布拉格光栅(FBG)滤除其中一个一阶边带,最后输入到光电探测器(PD)进行光电转换得到移相的微波信号。实验结果表明,基于DPMZM调制边带滤波的微波光子移相器具有传输特性稳定、输出幅度波动小的优点。该结构还具有相移调节响应速度快、应用频带宽以及移相范围大于360°等特点。 相似文献
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分析了以半导体光放大器 (SOA)为基础的对称马赫 -曾德尔干涉仪 (MZI)解复用器在控制脉冲和信号脉冲反向传播 (CPMZ)与同向传播 (TPMZ)两种工作模式下的开关特性。研究表明 :控制脉冲宽度、半导体光放大器的长度和非线性增益压缩影响着控制脉冲和信号脉冲反向传播开关窗口的大小 ,是限制控制脉冲和信号脉冲反向传播高速工作的主要因素。当控制脉冲宽度小于半导体光放大器的渡越时间时 ,如时延量小于于两倍的半导体光放大器渡越时间 ,控制脉冲和信号脉冲反向传播的峰值开关比开始恶化 ;当控制脉冲宽度超过半导体光放大器的渡越时间时 ,即使时延量大于两倍的半导体光放大器渡越时间 ,峰值开关比也出现恶化。因此当控制脉冲和信号脉冲反向传播高速工作时 ,控制脉冲应尽可能窄 ,且时延量必须大于两倍的半导体光放大器渡越时间以确保有较高的峰值开关比。而半导体光放大器长度效应对控制脉冲和信号脉冲同向传播的影响甚微 相似文献
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一种级联马赫-曾德尔滤波器设计的新方法 总被引:8,自引:2,他引:6
级联马赫—曾德尔干涉仪滤波器可实现平顶化的滤波器频谱响应,但是利用传统的传输矩阵法。并不能方便地得到级联马赫—曾德尔干涉仪滤波器中各耦合器的耦合系数。将级联马赫—曾德尔干涉仪滤波器与数字信号处理中的有限脉冲响应滤波器进行了类比,并将数字滤波器的设计方法引入到级联马赫—曾德尔干涉仪滤波器的设计中,将滤波器的传输函数表示成为各耦合器耦合系数的显式函数,同时利用遗传算法,计算了对于给定的滤波器频谱响应,级联马赫—曾德尔干涉仪光滤波器中各耦合器的耦合系数。通过实例证明了利用数字滤波器的设计方法及遗传算法设计级联马赫—曾德尔干涉仪光滤波器,不仅可以得到理想的结果,而且可以提高光滤波器的设计效率。 相似文献
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建立了基于线性光放大器(LOA)的交叉相位调制波长转换模型,模型考虑了纵向载流子密度变化引起的有源区折射率的改变、端面反射、相位调制、放大的自发辐射噪声和横向垂直光场(VCL)的增益钳制作用。利用分段方法模拟计算了布拉格反射镜的反射率、偏置电流、信号光和探测光的功率和波长、信号速率与转换后信号啁啾的关系。结果表明:LOA具有增益钳制作用,能提高转换后信号的性能;增大布拉格反射镜的反射率可以降低转换后信号的啁啾;合理控制输入信号光和探测光的强度,调整干涉仪两臂LOA偏置电流的强度,可以获得啁啾较小的转换信号。 相似文献
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高消光比双通马赫-曾德尔干涉仪梳状滤波器 总被引:4,自引:0,他引:4
提出了一种新颖结构的高消光比双通马赫-曾德尔干涉仪梳状滤波器,将常规单通马赫-曾德尔干涉仪的两个输出端与光隔离器连接,构成一个双通马赫-曾德尔干涉仪梳妆滤波器,对滤波器的输出特性进行了理论分析和实验研究。数值模拟表明,与常规的单通马赫-曾德尔干涉仪相比,在相同参量的情况下该双通马赫-曾德尔干涉仪梳妆滤器的消光比得到了大大改善,消光比的提高取决于干涉仪的臂长差,当干涉仪的臂长差为0.7366mm时,消光比提高了20dB。实验结果表明,双通马赫-曾德尔干涉仪梳妆滤器的消光比为25.8dB,消光比提高了13dB。 相似文献
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A comprehensive theoretical model of an ultrafast all-optical Boolean XOR gate implemented with a semiconductor optical amplifier (SOA)-assisted Sagnac interferometer is presented. The model accounts for the SOA small signal gain, linewidth enhancement factor and carrier lifetime, the switching pulses energy and width and the Sagnac loop asymmetry. By undertaking a detailed numerical simulation, the influence of these key parameters on the metrics that determine the quality of switching is thoroughly investigated and simple design rules are extracted for their proper selection so as to ensure optimum operation. The obtained results are in good agreement with the published experimental measurements and confirm the feasibility of realizing the gate at 10 Gb/s with fairly high performance. The model can be extended for studying more complex all-optical circuits of enhanced functionality in which the XOR gate is the basic building block. 相似文献
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All-optical NOT and XOR logic operation at 2.5 Gb/s based on semiconductor optical amplifier loop mirror 下载免费PDF全文
All-optical XOR and NOT logic operations based on semiconductor optical amplifier loop mirror (SLALOM) aresimultaneously demonstrated theoretically and experimentally. Based on a segmented semiconductor optical amplifier model, the all-optical logic operation process is simulated theoretically. In an experimental study, 2.5 Gb/s all-optical XOR operation was achieved in the output port of SLALOM, while all-optical NOT operation was achieved in the input port through a circulator at the same time. 相似文献
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Future broadband optical communications networks will rely on all-optical switches to perform a set of processing functions exclusively in the optical domain. Interferometric optical switches using semiconductor optical amplifier (SOA) nonlinearities can perform efficient optical switching with few tens of fJ control energies and short fiber lengths allowing for monolithic integration. In this paper we present work performed with a three terminal SOA-assisted Sagnac interferometer. We review all-optical Boolean AND and XOR logic results at 10 GHz and 10 Gb/s for full duty cycle and pseudo-random data pattern operation, respectively, achieved with adequate contrast ratios, remarkably low switching energies and low pattern dependence. The ability of the device to be cascaded was proved up to 10 GHz by recirculating stably for hours arbitrary pattern profiles. Finally, and in view of the extension of photonic networks single channel data rates beyond 40 Gb/s, the performance of the switch was simulated in terms of its critical parameters. The obtained results showed that full switching operation at 40 GHz or higher is feasible either by deploying gain recovery reduction techniques in bulk and quantum well SOAs or alternatively other technologically advanced optical devices, such as quantum dot SOAs. 相似文献
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When the two-photon absorption of a high intensity pump beam takes place in a semiconductor optical amplifier there is an associated fast phase change of a weak probe signal. A scheme to realize fast all-optical XOR logic function using two-photon absorption induced phase change has been analyzed. Rate equations for semiconductor optical amplifiers, for input data signals with high intensity, configured in the form of a Mach–Zehnder interferometer has been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The model shows that both XOR operation and pseudo-random binary sequence generation at 250 Gb/s with good signal to noise ratio is feasible. 相似文献
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高速全光逻辑门是实现光分组交换、光计算和未来高速大容量光传输的关键器件,近年来受到广泛的关注。半导体光放大器(SOA)因为具备体积小、工作波长范围宽、响应时间短及良好的非线性特性等优点,成为研制高速全光逻辑器件的首选。采用分段模型分析了SOA的稳态增益饱和特性,通过数值求解载流子速率方程和光传输方程对其特性进行了仿真实现。结果表明,SOA在入射光功率不同时会表现出明显的非线性;在一定范围内增加光功率,SOA增益持续增加,继续增加入射光功率,SOA逐渐进入饱和吸收状态,增益反而降低。 相似文献
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The feasibility of increasing by a factor of two the data speed of the semiconductor optical amplifier (SOA)-based ultrafast nonlinear interferometer in dual rail switching mode by means of a cascaded optical delay interferometer (ODI) is explored and shown through numerical simulation. From the theoretical analysis it has been found that such extension cannot be done without employing this passive element for any selection of the critical parameters but the SOA carrier lifetime, for which the requirements are yet very demanding. If, however, the time delay introduced by the ODI is adjusted to almost 1/3rd of the bit period, then the result of Boolean XOR operation can be improved for a specified range of parameter values, which can be further selected to be more relaxed than is possible when the ODI is not being used. The use of the ODI allows both error-free and pattern-free performance at the output of the interferometric structure configured as ultrafast XOR gate. In this manner the scheme can offer a practical alternative solution for extending the operating rate of this logical module and enabling its exploitation as a basic building unit in more sophisticated all-optical circuits and subsystems. 相似文献
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The performances of all-optical logic gates XOR, AND, OR, NOR and NAND based on semiconductor optical amplifier (SOA) have been simulated including the effects of amplified spontaneous emission (ASE). For the parameters used, all-optical logic gates using SOA are capable of operating at speed of 80 Gb/s. 相似文献