All optical logic NAND gate based on two-photon absorption in semiconductor optical amplifiers

We propose a new scheme to realize all optical logic NAND operating at high speeds up to 250 Gb/s utilizing the ultrafast phase response during two-photon absorption (TPA) process in semiconductor optical amplifiers (SOA). NAND gate is important because other Boolean logic elements and circuits can be realized using NAND gates as basic building blocks. Rate equations for semiconductor optical amplifiers (for input data signals with high intensity) configured in the form of a Mach-Zehnder interferometer have been solved. The input intensities are high enough so that the two-photon induced phase change is larger than the regular gain induced phase change. The performance of this scheme is analyzed by calculating the quality factor of the resulting data streams. The results show that both AND and NAND operations at 250 Gb/s with good signal to noise ratio are feasible.     

Performance of all-optical XOR gate based on two-photon absorption in semiconductor optical amplifier-assisted Mach–Zehnder interferometer with effect of amplified spontaneous emission

The performance of all-optical XOR gate is simulated and investigated. This Boolean function is realized by using a Mach–Zehnder interferometer (MZI) and exploiting the nonlinear effect of two-photon absorption (TPA) in semiconductor optical amplifier (SOA) incorporated in the MZI arms. By adjusting the input pulse intensities to be high enough, the TPA-induced phase change can be larger than the regular gain-induced phase change and hence support ultrafast operation in dual rail switching mode. The numerical study is carried out by taking into account the effect of amplified spontaneous emission (ASE). The dependence of the output quality factor ( \(Q\) -factor) on critical data signals and SOAs parameters is examined and assessed. The obtained results confirm that the XOR gate implemented with the proposed scheme is capable of operating at a data rate of 250 Gb/s with logical correctness and high output \(Q\) -factor.     

双光子激发ZnSe自由载流子超快动力学研究

采用Z扫描和抽运-探测实验技术, 在波长为532 nm、脉冲宽度为41 fs的条件下测得ZnSe晶体的双光子吸收系数, 并获得了不同激发光强下的自由载流子吸收截面、电子-空穴带间复合时间和电子-声子耦合时间. 研究发现, 随着激发光强的增大, 自由载流子吸收截面减小, 复合时间变短. 当激发光强增大导致载流子浓度大于10¹⁸ cm^-3时, 抽运-探测信号出现明显改变, 原因归结为强光场激发导致样品在短时间内带隙变窄和电子-空穴等离子体的形成.     

Influence of nonlinear absorption effects on optical bistability in semiconductor ring resonators

We present a theoretical investigation of optical bistability in a nonlinear semiconductor ring resonator, by taking into account the two-photon absorption and the free-carrier absorption. By solving the intensity equation within the ring resonator, a parametric formulation is obtained for describing the bistability relation between the input and the output intensities. Numerical results show that the nonlinear absorption effects can affect the critical points and domain of the optical bistability.     

10 Gb/s Reconfigurable Optical Logic Gate Using a Single Hybrid-Integrated SOA-MZI

Abstract

A novel reconfigurable Boolean device based on a single Mach-Zehnder interferometer with semiconductor optical amplifiers is demonstrated at 10 Gb/s using intensity return-to-zero modulated signals. The experimental results show that the device can be dynamically reconfigured to operate as a logic XOR, AND, OR, and NOT gate using optical switches. By properly adjusting the input powers, an extinction ratio higher than 10 dB may be obtained. The potential of integration of this architecture makes it an interesting approach in photonic computing and optical signal processing.     

双光子吸收的Franz-Keldysh效应

从实验上证实Hg_0.695Cd_0.305Te 光电二极管空间电荷区中存在双光子吸收的Franz-Keldysh效应.利用一个皮秒Nd:YAG激光器抽运的光学参量产生器和差频产生器作为激发光源,测量了入射波长为λ₀=7.92μm的脉冲激光所激发的光响应随入射光强的变化关系.脉冲光响应峰值强度随入射光强的增大呈现二次幂函数增强趋势.采用等效RC电路模型将脉冲光伏信号峰值与入射光强相关联,得到空间电荷区中强电场下单光束 关键词： Franz-Keldysh效应 碲镉汞 双光子吸收 脉冲光伏信号     

10 Gb/s Reconfigurable Optical Logic Gate Using a Single Hybrid-Integrated SOA-MZI

A novel reconfigurable Boolean device based on a single Mach-Zehnder interferometer with semiconductor optical amplifiers is demonstrated at 10 Gb/s using intensity return-to-zero modulated signals. The experimental results show that the device can be dynamically reconfigured to operate as a logic XOR, AND, OR, and NOT gate using optical switches. By properly adjusting the input powers, an extinction ratio higher than 10 dB may be obtained. The potential of integration of this architecture makes it an interesting approach in photonic computing and optical signal processing.     

Tunable double-beam optical bistability in an asymmetric double quantum-well system

We have proposed a scheme for double-beam optical bistability in a tunnel-coupled asymmetric double quantum-well driven by two optical fields circulating inside two independently unidirectional ring cavities. In contrast to the single-cavity case where single-photon saturated absorption and self Kerr-nonlinearity are dominant, the two-photon absorption and cross phase modulation can be enhanced via tunneling induced interference and have an important influence to the formation of bistability. The bistable behavior can be controlled effectively via the system parameters such as the input and detuning of control field, the detuning of the probe field, Fano interference strength and cooperation parameter. Furthermore, the proposed scheme has the ability to manipulate the outputs of two optical cavities simultaneously. Due to the flexible design of semiconductor quantum well, our scheme is more practical than atomic system, therefore it can be utilized to achieve dual all-optical switching which has application in optical communication and computing.     

All-Optical Wavelength Conversion Based on Four-Wave Mixing in Dispersion-Engineered Silicon Nanowaveguides

We demonstrate experimentally all-optical wavelength conversion based on four-wave mixing in dispersion-engineered silicon nanowaveguides with a picosecond pulse pump. We find that the conversion efficiency is significantly limited by nonlinear losses induced by the two-photon absorption and freecarrier absorption. Using a picosecond pulse pump centered at 1,550 nm, we show that the input continuous-wave signals can efficiently be converted into a broadband idler pulse in silicon waveguides with various dimensions. Conversion efficiencies versus signal wavelengths are different for silicon waveguides with different dimensions due to the variation in the phase mismatch; we obtain a conversion efficiency of – 32 dB in silicon nanowaveguides with a length of 5.8 mm. Such on-chip optical wavelength converters can find important potential applications in highly-integrated optical circuits for all-optical ultrafast signal processing.     

All-optical ultrafast logic gates based on saturable to reverse saturable absorption transition in CuPc-doped PMMA thin films

A detailed theoretical analysis of femtosecond transition from saturable (SA) to reverse saturable absorption (RSA) has been carried out in Copper-Phthalocyanine (CuPc)-doped polymethylmethacrylate (PMMA) thin films. The transition due to fifth-order effect of excited-state absorption induced two-photon process has been optimized with respect to intensity, concentration and nonlinear coefficients to design various all-optical logic gates, namely, OR and AND at lower intensities (SA region), XOR at the transition intensity, and the universal NAND and NOR at higher intensities (RSA region). The advantages of ultrafast operation, simplicity, tunability, high contrast, stability of CuPc-doped PMMA thin film, and the possibility to control and realize various logic operations in the same film at the same wavelength by only controlling the pulse intensity, instead of a pump-probe configuration, make them attractive for practical implementation.     

基于线性光放大器的全光逻辑异或门理论分析

基于速率方程建立了线性光放大器(LOA)的数值模型,模拟了线性光放大器的增益钳制特性。与对称结构马赫曾德尔干涉仪(MZI)的传输矩阵相结合,构建了线性光放大器马赫曾德尔干涉仪全光逻辑异或门模型,实现了两路40Gbit/s信号的异或运算。与传统的半导体光放大器(SOA)构成的马赫曾德尔干涉仪型异或门进行了比较,从器件结构上对两种异或门运算结果的差异给出了解释。结果表明,线性光放大器具有平坦的增益特性,对输入信号的扰动具有不敏感性,垂直光场缩短了载流子恢复时间;线性光放大器马赫曾德尔干涉仪结构可以实现异或运算;利用差分相位法可以解决载流子恢复时间对信号处理速度的限制,合理地选择延迟时间能获得较好的运算结果;输出信号具有眼图张开度大、消光比高、峰值啁啾小、对波长变化不敏感等优点。     

Narrowing of a two-photon resonance due to elastic collisions

The lineshape of two-photon absorption in a standing-wave field during elastic collisions is studied. It has been found that the transit broadening of the two-photon resonance on vibrational-rotational molecular transitions is sharply decreased because of an increase in the time of interaction of particles with the electromagnetic field due to elastic collisions. The effect considered allows one to obtain supernarrow optical resonances of two-photon absorption in a low-pressure gas with high intensity.     

硅的间接跃迁双光子吸收系数谱

利用皮秒Nd:YAG脉冲激光器作为激发光源,测量出光子能量介于1.36 μm (0.912 eV)—1.80 μm (0.689 eV)之间的硅间接跃迁双光子吸收系数谱.尽管此波段范围内的激光光子能量小于硅间接带隙,但当激光辐照在硅基光电二极管受光面时,在二极管两电极端仍然探测到了显著的脉冲光伏信号.光伏信号峰值强度与入射光强呈二次幂函数关系,表明其是双光子吸收过程.采用pn结等效结电容充放电模型,将光伏响应信号峰值与入射光强相关联,从中提取出硅的间接跃迁双光子吸收系数,改变入射波长得到系数谱.研究表明:     

Boost up of four wave mixing signal in semiconductor optical amplifier for 40 Gb/s optical frequency conversion

The 40 Gb/s optical frequency converter for non-return to zero differential phase shift keying (NRZ-DPSK) signal by using four wave mixing in semiconductor optical amplifier (SOA) have achieved sucessfully. The optimized signal-to-pump ratio for NRZ-DPSK by using optimized SOA structure with enhanced FWM effect is also evaluated. The optimum signal-to-pump ratio is 12 dB and 10 dB with Q factor penalty of 0.685 dB and 0.663 dB. The dependence of four wave mixing efficiency and converted signal power on signal input power is studied and it is evaluated that four wave mixing efficiency decreases with increase in the input power. The impact of pump power, signal-to-pump ratio, and SOA parameters with Q factor penalty for 40 Gb/s has been illustrated. It has shown that converted signal power increases up to the saturation power of semiconductor optical amplifier, then decreases. It is observed that for the optimum pump power, OSNR of converted signal varies little with signal input power.     

非对称量子阱中非线性光学吸收系数的计算

非对称量子阱中的非线性光学效应因其潜在的实用价值而引起人们的广泛关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器件具有重要的理论指导意义.以Pschl-Teller势阱为例研究了影响非对称量子阱中的非线性光学吸收系数的因素.考虑到带间的电子弛豫,用量子力学中的密度矩阵算符理论导出了Pschl-Teller势阱中的线性与三阶非线性光学吸收系数的表达式.因该势阱中有两个可调参数,通过调节系统的参数,发现该系统的非线性光学吸收系数呈规律性的变化.以典型的GaAs/AlGaAs非对称量子阱为例作了数值计算,通过调节系统的参数,数值计算结果表明,入射光强以及系统的非对称性对量子阱的非线性光学吸收系数有较大的影响,从而为实验上研究非对称量子阱的非线性光学效应提供了必要的理论依据.     

Detailed theoretical investigation on relative intensity noise reduction enhancement based on reflective SOAs

The enhanced performance for relative intensity noise (RIN) reduction based on reflective semiconductor optical amplifiers (R-SOA) has been investigated theoretically by comparison with conventional transmission SOA. The results show that, by selecting appropriate input optical power, as large as >20 dB RIN suppression improvement can be achieved for R-SOA, without sacrificing the noise rejection bandwidth. With increased injection current, the optimized input signal power is decreased and the operation region is extended for the best RIN reduction. For RIN suppression in WDM spectrum slicing, the bandwidth optimization of receiver filter should be performed to avoid the spectral broadening induced by self-phase modulation (SPM) and four wave mixing (FWM). Our derived result is helpful for designing and optimizing the R-SOA in application of noise suppression enhancement.     

Energy limits imposed by two-photon absorption for pulse amplification in high-power semiconductor optical amplifiers

We study the combined effects of dynamic gain saturation and two-photon absorption on the amplification of short pulses in semiconductor optical amplifiers and show that two-photon absorption can saturate the amplifier gain and limit the output pulse energies even for amplifiers with large gain saturation energies. We discuss the upper limits for the pulse energies obtainable from semiconductor optical amplifiers in the presence of two-photon absorption and show that for single transverse mode waveguide amplifiers these upper limits can range from values as small as a few picojoules to several hundred picojoules for pulse widths in the 0.5 ps to 20 ps range, respectively.     

基于DVD光头的双光子光致漂白三维光存储

基于现有的DVD光头物镜与音圈电机，根据光致漂白的双光子吸收气维光信息存储原理，以钛蓝宝石飞秒脉冲激光进行双光子光信息写入和读出，利用音圈电机进行选层，在新型光致漂白材料二苯乙烯衍生物中进行光致漂白二进制编码信息的存储和读出实验研究；实现了三层光信息存储，信息点间距和信息层间距分别为4μm和15μm；用Matlab软件读出信息的信号强度并对其进行了识别，识别结果与写入的二进制编码信息完全一致。实验证明了用DVD光头进行双光子三维光数据存储的可行性，表明双光子吸收光致漂白技术可以与现有CD／DVD兼容，为实现多层高密度和超高密度光信息存储打下基础。     

All-optical NOT and XOR logic operation at 2.5 Gb／s based on semiconductor optical amplifier loop mirror

All-optical XOR and NOT logic operations based on semiconductor optical amplifier loop mirror (SLALOM) aresimultaneously demonstrated theoretically and experimentally. Based on a segmented semiconductor optical amplifier model, the all-optical logic operation process is simulated theoretically. In an experimental study, 2.5 Gb/s all-optical XOR operation was achieved in the output port of SLALOM, while all-optical NOT operation was achieved in the input port through a circulator at the same time.     

Pöschl-Teller势阱中线性与非线性光学吸收系数的计算

非对称性量子阱中的非线性光学效应因其潜在的实用价值而引起了人们的广泛关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器件具有重要的理论指导意义.考虑带间的电子弛豫,用量子力学中的密度矩阵算符理论导出了Pöschl-Teller 势阱中的线性与三阶非线性光学吸收系数的表达式.通过调节Pöschl-Teller势阱中两个可调参数κ和λ,势阱的形状及其非对称性会随着κ和λ的取值不同而明显不同,从而其线性与非线性光学吸收系数的大小也会随势阱参数κ、λ和入射光强的变化而呈规律性的变化,并且当入射光强增强到一定程度会出现较强的饱和吸收现象.