利用表面微结构提高波长上转换红外探测器效率

波长上转换红外探测器具有实现大面阵焦平面的优势, 但光提取效率是制约器件整体效率的关键因素之一. 本文主要研究利用表面微结构来提高波长上转换红外探测器的效率. 首先通过仿真计算研究了表面微结构参数对光提取效率的影响, 然后基于优化设计的参数, 采用聚苯乙烯纳米球掩膜刻蚀的方法制作了具有圆台型表面微结构的波长上转换红外探测器. 测试结果表明, 具有表面微结构的器件的光提取效率比无表面微结构的器件提高了130%. 本文制作表面微结构的方法可以实现波长上转换红外探测器件整体效率的提高.     

MEMS红外图像转换芯片热力学性质研究

MEMS红外图像转换芯片是一种将可见光转换为红外辐射并用于红外目标模拟器的直接辐射型器件。对MEMS红外图像转换芯片的热力学性能进行研究:与标准黑体辐射谱对比表明芯片辐射光谱为黑体谱,红外波段平均发射率0.638;通过线扩散函数研究芯片横向热传导特性,其热扩散距离随衬底厚度降低而减小,在衬底上制作周期性像元阵列可以有效降低其热传导系数,衬底厚度360nm的刻有像元的转换芯片热传导系数为0.1W/m·K;转换芯片的时间特性研究表明其时间常数随衬底厚度减小而变小,衬底厚度345nm的芯片制冷至5℃时的时间常数为2.72ms。     

高效红外上转换显示器件

本文介绍了把激发的红外能量限制在光学腔内,并用单晶代替磷光体使红外上转换显示器件的转换效率获得重大改进。利用布列支曼法获得了BaY_2F_8:Yb,Er单晶。激发能量限制在由反射壁和分色镜组成的光学腔内。指出了转换效率改进的部分原因是延长了 Yb离子激发态寿命。讨论了实现上转换器件最佳化的方法,最后指出了该器件转换效率的实际上限,比以前估计的磷光体二极管的效率高二个数量级。     

用硫化助熔剂法合成红外上转换材料的研究

本文采用一种优化的硫化助熔剂方法合成了红外上转换材料,这种材料能够在室温下将红外光转换成可见光。这种新工艺在反应效率、生产成本、环境保护、工艺难度等方面均优于传统的热熔工艺。文章给出了红外上转换材料的激励光谱和发射光谱。     

上转换探测在脉冲CP_2激光雷达中的应用

本文研究了上转换探测器在脉冲CO_2激光雷达中的应用。该器件中的非线性红外晶体可把10微米波长的激光雷达辐射,转变为用一般的光电倍增管即可探测的可见光辐射。用上传换探测器可以显著地改善脉冲CO_2光雷达的性能,配置这种上转换探测器是利用上转换信号的窄带滤光器或前端的冷却滤光器来抑制热背景辐射。具有窄带可见光波滤光器的上转换探测器的灵敏度估计要比用光电二极管直接探测高两数个量级。冷滤光器可以使上转换探测几乎达到信号噪声极限。这些上转换探测器也象脉冲外差探测器一样,不会受斑点噪声的限制。     

白光有机发光器件的研究进展

白光有机发光器件(OLED)能够产生高效饱和的白光,且具有驱动电压低、材料柔性好、可实现大面积显示等特点,在信息显示与固态照明等领域有巨大的应用潜力.目前白光OLED主要分为单发光层、多发光层、下转换、叠层等结构,不同的结构具有各自的优势,都受到了很大关注.首先介绍了白光OLED的性能指标.接着,结合所开展的研究工作综述了白光OLED在结构和性能方面的研究进展,总结了实现高效白光OLED的各种方法,重点探讨了提高白光OLED性能的途径及所面临的挑战. 最后,展望了白光OLED的发展趋势. 关键词： 白光有机发光器件 固态照明 电致磷光 光取出     

基于中性层技术提升柔性OLED弯曲可靠性研究进展

有机发光二极管（OLED）由于具有结构简单、发光效率高、制造工艺简单和厚度超薄的特点,结合柔性基底可以制备具有弯曲和折叠功能的柔性OLED器件,在柔性显示、柔性照明等领域发挥了重要作用。在承受以弯曲为主的外加载荷时,柔性OLED器件中的无机薄膜很容易出现裂纹、脱层和屈曲等形式的失效,这些失效会使器件的导电性下降并破坏器件原有的结构,从而影响器件的效率与可靠性。中性层的使用能够有效减小器件关键部位的应变,从而减轻或消除失效,器件在弯曲状态下的可靠性也得以提高。近年来,一系列基于柔性OLED器件中性层的研究被陆续报道。本文综述了中性层技术在柔性OLED器件上的应用。首先,讨论了中性层的概念以及单个中性层位置的确定方法;其次,介绍了单个中性层和多个中性层在实际器件中的应用;最后,对柔性OLED器件未来的发展方向做出了展望。     

利用纳米球提高红外波长上转换探测器效率

在红外波长上转换探测器氮化硅(SiN_x)钝化层制作单层六角密排的二氧化硅(SiO_2)纳米球阵列,以提高红外波长上转换探测器的整体效率.采用自组装的方法在器件钝化层上制备了直径分别约为300,450,750和1000 nm的SiO_2纳米球,并与无表面微纳结构器件进行对比测试.结果表明:钝化层附着SiO_2纳米球能有效地提高红外波长上转换器的光提取效率;当SiO_2纳米球直径为750 nm时的光提取效率最优,是无表面微纳结构器件的2.6倍,可实现低成本制作高效率红外波长上转换探测器.     

低电压有机薄膜晶体管驱动顶发射有机发光二极管的集成像素的研制

研究了有机薄膜晶体管(OTFT)驱动顶发射有机发光二极管(OLED)的集成制备技术。通过减小栅绝缘层的厚度,达到降低OTFT工作电压的目的。OLED采用标准的绿光器件,利用超薄的Al薄膜作为半透明阴极实现顶发射功能。实现了低电压工作的OTFT与顶发射OLED的集成,其中OTFT的阈值电压为2.0 V,饱和场效应迁移率为0.40 cm2·V-1·s-1。基于实验数据,对集成像素的电特性进行了计算分析,在-5~-10 V的栅电压调控下,像素亮度能在50~250 cd/m2的范围内实现线性灰度调控。     

存储型上转换发光材料CaS:Eu,Sm的发光机理研究

采用低温燃烧合成(LCS)法制备了存储型上转换发光材料CaS∶Eu,Sm,并对其上转换发光机理进行了研究。研究表明:样品的激发光谱位于200~600nm之间,紫外或可见光均可有效地激发该材料来完成充能过程,且可见光激发占优势;样品的红外响应光谱范围为800~1600nm,由辅助激活离子Sm所形成的劈裂的深陷阱能级是该材料具有宽频谱红外转换特性的根本原因;样品的热释光谱高温峰值位于351.02℃,计算得到的陷阱能级深度为0.82eV,深度适中,利于激发能的储存和上转换发光的产生。     

Study on the p-type QWIP-LED device

A p-type quantum well infrared photodetector (QWIP) integrated with a light-emitting diode (LED) (named QWIP-LED) was fabricated and studied. The infrared photo-response spectrum was obtained from the device resistance variation and the near-infrared photo-emission intensity variation. A good agreement between these two spectra was observed, which demonstrates that the long-wavelength infrared radiation around 7.5 μm has been transferred to the near-infrared light at 0.8 μm by the photo-electronic process in the QWIP-LED structure. Moreover, the experimentally observed infrared response wavelength is in good agreement with the theoretical calculation value of 7.7 μm. The results on the upconversion of the infrared radiation will be very useful for the new infrared focal plane array technology.     

Study on the p-type QWIP-LED device

A p-type quantum well infrared photodetector (QWIP) integrated with a light-emitting diode (LED) (named QWIP-LED) was fabricated and studied. The infrared photo-response spectrum was obtained from the device resistance variation and the near-infrared photo-emission intensity variation. A good agreement between these two spectra was observed, which demonstrates that the long-wavelength infrared radiation around 7.5 μm has been transferred to the near-infrared light at 0.8 μm by the photo-electronic process in the QWIP-LED structure. Moreover, the experimentally observed infrared response wavelength is in good agreement with the theoretical calculation value of 7.7 μm. The results on the upconversion of the infrared radiation will be very useful for the new infrared focal plane array technology.     

Dots,QWISPs, and BIRDs

We report work on several quantum structure based infrared detectors. We describe the concept of the submonolayer quantum dot based infrared photodetectors, report device results, and present imaging results from a megapixel focal plane array. We describe the concept and experimental progress of the quantum well intra-subband photodetector (QWISP), which is closely related to the quantum well infrared photodetector (QWIP), but uses the dopant-assisted intra-subband absorption mechanism in quantum wells for normal-incidence far infrared/terahertz radiation detection. We discuss aspects of superlattice heterostructure based barrier infrared detectors (BIRDs).     

Substrate removal for improved performance of QWIP–LED devices grown on GaAs substrates

Pixelless infrared imaging can be accomplished by epitaxially integrating a light emitting diode (LED) with a quantum well infrared photodetector (QWIP) large area device. The device acts as an infrared image converter by detecting a mid-to-far infrared (M/FIR) signal using the QWIP and outputting a near-infrared (NIR) signal via the integrated LED. By removing the device substrate, the detector performance can be significantly improved. This paper describes a substrate removal process, which uses a combination of mechanical polishing and chemical selective wet-etch. The choice of a suitable optical adhesive and the control of carrier/device parallelism are the two most important factors determining the success of the process.     

Investigation of the quantum dot infrared photodetectors dark current

Quantum dot infrared photodetectors (QDIPs) are more efficient than other types of semiconductor based photodetectors; so it has become an actively developed field of research. In this paper quantum dot infrared photodetector dark current is evaluated theoretically. This evaluation is based on the model that was developed by Ryzhii et al. Here it is assumed that both thermionic emission and field-assisted tunneling mechanisms determine the dark current of QDIPs; moreover we have considered Richardson effect, which has not been taken into account in previous research. Then a new formula for estimating average number of electrons in a quantum dot infrared photodetector is derived. Considering the Richardson effect and field-assisted tunneling mechanisms in the dark current improves the accuracy of algorithm and causes the theoretical data to fit better in the experiment. The QDIPs dark current temperature and biasing voltage dependency, contribution of thermionic emission and field-assisted tunneling at various temperatures and biasing voltage in the QDIPs dark current are investigated. Moreover, the other parameter effects like quantum dot (QD) density and QD size effect on the QDIPs dark current are investigated.     

空穴在动量空间分布对p型量子阱红外探测器响应光谱的影响

通过对p型量子阱红外探测器(QWIP)的自洽计算，得到了量子阱价带的电子结构和器件的光电流谱，并研究了载流子在动量空间分布对p型QWIP光谱响应的影响.计算结果表明，在动量空间不同区域的空穴对器件的光谱响应起着不同作用，从而使得在p型QWIP中，空穴浓度和温度都将影响器件的响应光谱.所得结果合理地解释了实验中器件响应光谱随掺杂浓度和温度的变化. 关键词： p型量子阱红外探测器 响应光谱 空穴浓度 温度     

Emergent Upconversion Sustainable Micro‐Optical Trapping Device

Ultrathin‐thickness single‐junction Si‐based solar cells can be developed to enhance photoelectric conversion efficiency (PECE) approaching to Shockley–Queisser limit. However, loss of short circuit current is a crucial factor that dramatically affects PECE improvement. Even though many studies have focused on rare reflector architecture for facilitating near‐infrared radiation absorption, PECE is still constraint due to its fabrication cost. Herein, an upconversion sustainable micro‐optical trapping device is reported. Using a systematic procedure, a high upconversion performance core–shell‐nanoparticles (CSNPs) structure is synthesized. Accordingly, silica diatom microporous frustule is a good electromagnetic field localization chamber, upon which CSNPs are embedded through a microassemble synthesis. This emerging device can be support on ultrathin‐thickness single‐junction Si‐based solar cells as a rare absorber with its low preparation cost. In the experiment, CSNPs upconversion optical density by surface plasmon resonance of Au nanoparticle's enhancement can be increased five‐time greater than NaYF₄ without SiO₂ coating. A finite difference time domain simulation and real color luminescence images in this study are also demonstrated.     

Periodically poled lithium niobate waveguide sum-frequency generator for efficient single-photon detection at communication wavelengths

We present a device to facilitate single-photon detection at communication wavelengths based on continuous-wave sum-frequency generation with an upconversion efficiency exceeding 90%. Sum-frequency generation in a periodically poled lithium niobate waveguide is used to upconvert signal photons to the near infrared, where detection can be performed efficiently by use of silicon avalanche photodiodes.     

Ultranarrow band and high-quantum-efficiency photodetector with waveguide-grating structure and inclined top mirror

A new type of one-mirror inclined waveguide-grating photodetector, which combines a waveguide-grating filter and an inclined top mirror is proposed. Greatly improved spectral response is achieved by the integration of waveguide-grating into classical thin-film homogeneous layers. Comparison between the grating filter and Fabry-Perot filter demonstrates that this structure has two advantages over other photodetector devices. First, the inclined mirror can decouple the quantum efficiency from response speed and spectral response linewidth. Second, comparing the traditional photodetector with Fabry-Perot filter, this type of photodetector with the same materials requires significantly fewer layers while maintaining the same linewidth response, high peak efficiency and remarkably low sideband reflectivity. Thus, this type of photodetector device represents basic new optical features with a significant potential for practical applications.     

The transition mechanisms of quantum-dot/quantum-well mixed-mode infrared photodetectors

The transition mechanisms of a 10-period quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetector is investigated in this paper. Both mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) responses are observed for the device. The lower normal incident absorption of the LWIR peak suggests that the QW intra-band transition is responsible for the response while the QD intra-band transition for the MWIR response. Due to the coexistence of MWIR and LWIR responses, the MWIR response should be resulted from one-photon transition while the LWIR response from the two-photon transition. To explain the transition mechanisms of the MMIP device, a model is proposed in this paper. The increases of both MWIR and LWIR responses with increasing measurement temperatures observed for the device are attributed to the increase of electrons in the QW ground state/wetting layer state resulted from the increase of one-photon absorption process with increasing temperatures.