Finite element simulation of stress distribution and development in 8YSZ and double-ceramic-layer La2Zr2O7/8YSZ thermal barrier coatings during thermal shock

In this paper, the thermal stress of the double-ceramic-layer (DCL) La₂Zr₂O₇/8YSZ thermal barrier coatings (TBCs) fabricated by atmospheric plasma spraying (APS) during thermal shock has been calculated. The residual stress of the coating after being sprayed has been regarded as the initial condition of the first thermal cycle. The characteristic of the stress development during the thermal cycle has been discussed, and the influence of the defects on the failure mode during the thermal cycle has also been discussed systematically. Finite element simulation results show that there exist higher radial thermal shock stresses on the ceramic layer surface of these two coatings. There also exist higher thermal stress gradient at the interface between the ceramic layer and the metallic layer. Higher thermal stress in 8YSZ/NiCoCrAlY coating lead to the decrease of thermal shock property as compared to that of LZ/8YSZ/NiCoCrAlY coating. The addition of LZ ceramic layer can increase the insulation temperature, impede the oxygen transferring to the bond coating and can also reduce the thermal stress. Considering from the aspects of thermal insulation ability and the thermal shock resistance ability, DCL type LZ/8YSZ TBCs is a more promising coating material compared with the single-ceramic-layer (SCL) type 8YSZ TBCs for the application.     

Optimum designs for multi-layered film structures based on the knowledge on residual stresses

Residual stresses are inevitably generated within the multi-layered film structures due to the mismatches of material properties between the adjacent layers. Using the force and moment equilibrium conditions and beam bending theory, the residual stresses in each layer can be predicted and expressed as σ_i(z) = E_i[?′ + K(z + δ)], where E_i is the elastic modulus of the layer, ?′ the strain due to the in-plane force resulting from the misfit strain, K(z + δ) characterizes the bending contribution. For a bilayer system, the expression of the residual stress in the film is relatively simple. If the each layer thickness is much less than the substrate thickness, Stoney's equation will be derived. The assumption of a constant elastic modulus throughout the system is only applicable when the film and the substrate thickness ratio is less than 0.1. Specific analyses are performed for the thermal stresses in ZrO₂/NiCoCrAlY thermal barrier coatings (TBCs) to illustrate the implementation of the analytical model. Moreover, the effects of single interlayer and graded interlayer inserted between the metallic layer and the ceramic layer on the residual stress distributions in TBCs are investigated. Additionally, the zero-deflection design is also discussed for typically duplex-layer TBC system.     

Preparation and characteristics of three-layer YSZ-(YSZ/Al2O3)-YSZ TBCs

Novel three-layer YSZ-(YSZ/Al₂O₃)-YSZ (6 wt.% Y₂O₃ partially stabilized ZrO₂) thermal barrier coatings (TBCs) were successfully prepared on Ni-based superalloy substrate using composite sol-gel and pressure filtration microwave sintering (PFMS) techniques. The coatings were evaluated for the cyclic oxidation resistance, thermal barrier effect and the presences of phases and microstructures. FE-SEM results indicate that the coatings were dense and crack-free. The coatings maintained their structural integrity when they were exposed at 1100 for 100 h. They exhibited superior oxidation resistance, spallation resistance and thermal insulation property compared with single-layer YSZ coatings. Moreover, the detailed mechanisms were discussed in order to understand the improved performance of the three-layer TBCs.     

Nanomechanical characterizations of InGaN thin films

In_xGa_1−xN thin films with In concentration ranging from 25 to 34 at.% were deposited on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Crystalline structure and surface morphology of the deposited films were studied by using X-ray diffraction (XRD) and atomic force microscopy (AFM). Hardness, Young's modulus and creep resistance were measured using a nanoindenter. Among the deposited films, In_0.25Ga_0.75N film exhibits a larger grain size and a higher surface roughness. Results indicate that hardness decreases slightly with increasing In concentration in the In_xGa_1−xN films ranged from 16.6 ± 1.1 to 16.1 ± 0.7 GPa and, Young's modulus for the In_0.25Ga_0.75N, In_0.3Ga_0.7N and In_0.34Ga_0.66N films are 375.8 ± 23.1, 322.4 ± 13.5 and 373.9 ± 28.6 GPa, respectively. In addition, the time-dependent nanoindentation creep experiments are presented in this article.     

Structural characterization of La0.9Ba0.1MnO3/Y-ZrO2 film by X-ray diffraction

Perovskite manganite La_0.9Ba_0.1MnO₃(LBMO) films were deposited on (0 0 1)-oriented single crystal yttria-stabilized zirconia (YSZ) substrate by 90° off-axis radio frequency magnetron sputtering. The film thickness ranged from 10 nm to 100 nm. Grazing incidence X-ray diffraction technique and high resolution X-ray diffraction were applied to characterize the structure of LBMO films. The LBMO film mainly consisted of (0 0 1)-orientated grain as well as weakly textured (1 1 0)-orientated grain. The results indicated that an amorphous layer with thickness of about 4 nm was formed at the LBMO/YSZ interface. The strain in LBMO film was small and averaged to be about -0.14%. The strain in the film was not lattice mismatch-induced strain but residual strain due to the difference in thermal expansion coefficient between film and substrate.     

Electrical properties and redox stability of tantalum-doped strontium titanate for SOFC anodes

SrTa_xTi_1−xO₃ (STT) with x = 0.01, 0.05, and 0.10, has been investigated as a potential electron conductor for solid oxide fuel cell (SOFC) anodes. STT was found to be chemically stable under oxidizing and reducing conditions and chemically compatible with yttria-stabilized zirconia (YSZ). The coefficient of thermal expansion (CTE) was near that of YSZ, ranging from 11.3 to 11.8 × 10⁻⁶ K⁻¹. The conductive properties of bulk STT and porous STT-YSZ composites were studied under relevant SOFC operating temperatures and redox cycling conditions. In order to achieve reasonable conductivities, samples were initially reduced at 1673 K. Conductivity after redox cycling was higher for lower dopant concentrations. The redox stable conductivity of a porous composite with x = 0.01 was 1.1 S/cm at 1073 K in humidified H₂ (3% H₂O). Fuel cell tests indicated an anode impedance of 0.4 Ω cm² at 973 K in humidified H₂ for STT-YSZ anodes infiltrated with 3 wt.% CeO₂ and 1 wt.% Pd.     

Porous electrolyte-supported tubular micro-SOFC design

Due to the poor redox cycling resistance of the second generation of μ-SOFCs, a new generation of SOFC has been recently developed using a porous electrolyte-supported structure to overcome this problem. In this research, the porous structure was successfully fabricated with slip casting using calcined YSZ (ZrO₂ + 8 mol% Y₂O₃) with or without graphite as a pore former. Calcination of YSZ powder at 1300-1500 °C prior to making the slip leads to growth of YSZ crystals and particle size which results in a decrease in surface area and powder sinterability. This was found to be an important criterion in developing the porous structure as, due to the high sinterability of non-calcined YSZ, even the addition of graphite is inadequate to generate sufficient open porosity. A dense YSZ electrolyte layer was immediately coated on the porous structure using YSZ calcined at 1300 °C with a sequential slip casting method. Sample thickness was found to be a function of both graphite content as well as YSZ calcination temperature. Physical properties of the porous YSZ supports and SEM analysis of the support and coated electrolyte are presented.     

High performance nanostructured ZrO2 based thermal barrier coatings deposited by high efficiency supersonic plasma spraying

In this paper, the nanostructured zirconia (ZrO₂) based thermal barrier coatings (TBCs) deposited by high efficiency supersonic atmospheric plasma spraying (SAPS), were described. The phase composition, microstructure, thermal conductivity and thermal shock resistance of as-sprayed coating were studied. The results revealed that the as-sprayed coating was composed of tetragonal zirconia and consisted of some unmelted nanoparticles (30-50 nm) and nanograins (60-110 nm), and the latter was the main microstructure of the coating. The nanograins and homogeneously distributed micro-cracks of coating resulted in not only low thermal conductivity, but also high thermal cycling lives. Besides, the failure process of coating during thermal cycles was also investigated in the present work.     

Epitaxial growth of YSZ buffer layer for YBa2Cu3O7−δ coated conductor by reel-to-reel pulsed laser deposition

Yttria-stabilized zirconia (YSZ) buffer layers were deposited on CeO₂ buffered biaxially textured Ni-W substrate by reel-to-reel pulsed laser deposition (PLD) for the application of YBa₂Cu₃O_7−δ (YBCO) coated conductor and the influence of substrate temperature and laser energy on their crystallinity and microstructure were studied. YSZ thin films were prepared with substrate temperature ranging from 600 to 800 °C and laser energy ranging from 120 to 350 mJ. X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin film structure and surface morphology depend on these parameters. It was found that the YSZ films grown at substrate temperature below 600 °C or laser energy above 300 mJ showed amorphous phase, the (0 0 1) preferred orientation and the crystallinity of the YSZ films were improved with increasing the temperature, but the surface roughness increased simultaneously, the SEM images of YSZ films on CeO₂/NiW tapes showed surface morphologies without micro-cracks. Based on these results, we developed the epitaxial PLD-YSZ buffer layer process at the tape transfer speed of 3-4 m/h by the reel-to-reel system for 100 m class long YBCO tapes.     

Temperature compensating Elinvar character in Fe-Mn-Si alloys

Young's modulus-temperature and thermal expansion curves were measured in γ-Fe-31Mn-(0.25-8.67) Si-0.77C (at%) alloys by dynamic audio resonance method and in a light dilatometer. The results show that the anomalies in Young's modulus and thermal expansion appear near the Néel temperature. The temperature coefficient of Young's modulus, (1/E_p)(dE_p/dT), is controlled by Si content below the Néel temperature. When Si content increases to 5.31 at%, (1/E_p)(dE_p/dT) is close to zero in temperature range from 260 to 335 K, i.e. the Fe-31Mn-5.31Si-0.67C (at%) alloy shows Elinvar character. The temperature range in which the Elinvar character appears is wider than that of γ-Fe-Mn Elinvar alloys. The change in exchange energy and the ΔE effect result from the effect of Si on the antiferromagnetic behavior in γ-Fe-Mn alloys since it induces or enhances localized magnetic moment. When the increase in normal Young's modulus due to lowering temperature is compensated by the ΔE effect caused by the antiferromagnetic ordering, Elinvar character appears.     

Microstructure and nanohardness of the diluted magnetic semiconducting Cd1−xMnxS nano-crystalline films

Cd_1−xMn_xS nano-crystalline films (0 ≤ x ≤ 0.5) were formed on glass substrates by thermal evaporation technique at room temperature (300 K). AFM studies showed that all the films were in nano-crystalline form with the grain size varying in the range between 36 and 58 nm and exhibited hexagonal structure of the host material. The lattice parameters varied linearly with composition, following Vegard's law in the entire composition range. The nanohardness and Young's modulus decreased sharply with ‘Mn’ content upto x = 0.3 and increased with high Mn content.     

Characterization of Zr-Si-N films deposited by cathodic vacuum arc with different N2/SiH4 flow rates

Zr-Si-N films were deposited on silicon and steel substrates by cathodic vacuum arc with different N₂/SiH₄ flow rates. The N₂/SiH₄ flow rates were adjusted at the range from 0 to 12 sccm. The films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), hardness and wear tests. The structure and the mechanical properties of Zr-Si-N films were compared to those of ZrN films. The results of XRD and XPS showed that Zr-Si-N films consisted of ZrN crystallites and SiN_x amorphous phase. With increasing N₂/SiH₄ flow rates, the orientation of Zr-Si-N films became to a mixture of (1 1 1) and (2 0 0). The column width became smaller, and then appeared to vanish with the increase in N₂/SiH₄ flow rates. The hardness and Young's modulus of Zr-Si-N films increased with the N₂/SiH₄ flow rates, reached a maximum value of 36 GPa and 320 GPa at 9 sccm, and then decreased 32 GPa and 305 GPa at 12 sccm, respectively. A low and stable of friction coefficient was obtained for the Zr-Si-N films. Friction coefficient was about 0.1.     

Mechanical stress in ALD-Al2O3 films

Mechanical stress in atomic-layer deposition (ALD)-Al₂O₃ films was investigated at room temperature and during thermal cycling up to 870 °C. The films were generally under tensile stress. Thicker films (25-60 nm) showed a sharp stress increase at about 780-790 °C. X-ray diffraction (XRD)-, X-ray reflectance (XRR)- and X-ray photoelectron spectroscopy (XPS)-measurements indicate an irreversible phase transition from amorphous AlO(OH) to a mixture of different crystalline Al₂O₃-phases. Annealing at higher temperatures leads to a stress reduction as a result of diffusion and recovery processes. The stress behaviour of thinner films (<20 nm) during thermal cycling is quite different. Tensile stress increases with increasing temperature and decreases to nearly the same value during cooling down. The process is continuous and reversible.     

Large room temperature magnetoresistance in YSZ doped La0.67Ba0.33MnO3 composite

The temperature dependence of the resistivity for composite samples of (1−x)La_0.67Ba_0.33MnO₃+xYSZ(LBMO/YSZ) with different YSZ doping level of x has been investigated in a magnetic field range of 0-7000 Oe, where the YSZ represents yttria-stabilized zirconia (8 mol% Y₂O₃+92 mol% ZrO₂). With increasing YSZ doping level, the range of 0-10%, the metal-insulator transition temperature (T_P) decreases. However, the resistivity, specially the low temperature resistivity, increases. Results also show that the YSZ doping level has an important effect on a low field magnetoresistance (LFMR). In the magnetic field of 7000 Oe, a room temperature magnetoresistance value of 20% was observed for the composite with a YSZ doping level of 2%, which is encouraging for potential application of CMR materials at room temperature and low field.     

Growth, microstructure, and mechanical properties related to modulation period for ZrAlN/ZrB2 superlattice coatings

ZrAlN/ZrB₂ multilayered superlattice coatings with modulation periods ranging from 20 nm to 60 nm were grown in magnetron sputtering chamber. X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindention were employed to investigate the influence of modulation period on microstructure and mechanical properties of the multilayers. The sharp interfaces and nanoscale multilayered modulation were confirmed by SEM and XRD. The coating with modulation period of 40 nm and modulation ratio of 1:3 showed a marked polycrystalline structure with the strong mixture of ZrAlN (1 1 1), ZrB₂ (0 0 1) and ZrB₂ (1 0 1) textures. Meanwhile, it also possessed the highest hardness (36.4 GPa), elastic modulus (477 GPa), critical fracture load (76.48 mN), and lower residual stress, compared to those with other modulation periods and monolithic coatings.     

Structural and optical properties of YSZ thin films grown by PLD technique

We report on the structural and optical properties of yttria stabilized zirconia (YSZ) thin films grown by pulsed laser deposition (PLD) technique and in situ crystallized at different substrate temperatures (T_s = 400 °C, 500 °C and 600 °C). Yttria-stabilized zirconia target of ∼1 in. diameter (∼95% density) was fabricated by solid state reaction method for thin film deposition by PLD. The YSZ thin films were grown on an optically polished quartz substrates and the deposition time was 30 min for all the films. XRD analysis shows cubic crystalline phase of YSZ films with preferred orientation along 〈1 1 1〉. The surface roughness was determined by AFM for the films deposited at different substrate temperatures. The nano-sized surface roughness is found to increase with the increase of deposition temperatures. For the optical analysis, a UV-vis-NIR spectrophotometer was used and the optical band gap of ∼5.7 eV was calculated from transmittance curves.     

Internal stresses and stability of the tetragonal phase in zirconia thin layers deposited by OMCVD

Zirconia thin films were deposited by OMCVD (organo-metallic chemical vapour deposition) at various temperatures and oxygen partial pressures on a AISI 301 stainless steel substrate with Zr(thd)₄ as precursor. The as deposited 250 nm thin zirconia films presented a structure consisting of two phases: the expected monoclinic one and also an unexpected tetragonal phase. According to the literature, the stabilization of the tetragonal phase (metastable in massive zirconia) can be related to the crystallite size and/or to the generated internal compressive stresses.To analyze the effect of internal and external stresses on the thin film behaviour, in-situ tensile experiments were performed at room temperature and at high temperature (500 °C).Depending on the process parameters, phase transformations and damage evolution of the films were observed. Our results, associated to XRD (X-ray diffraction) analyses, used to determine phase ratios and residual stresses within the films, before and after the mechanical experiments, are discussed with respect to their microstructural changes.     

Influence of growth temperature of TiO2 buffer on structure and PL properties of ZnO films

A series of ZnO films with TiO₂ buffer on Si (1 0 0) substrates were prepared by DC reactive sputtering. Growth temperature of TiO₂ buffer changed from 100 °C to 400 °C, and the influence on the crystal structures and optical properties of ZnO films have been investigated. The XRD results show that the ZnO films with TiO₂ buffer have a hexagonal wurtzite structure with random orientation, and with the increase of growth temperature of TiO₂ buffer, the residual stresses were released gradually. Specially, the UV emission enhanced distinctly and FWHMs (full width half maximum) decreased linearly with the increasing TiO₂ growth temperature. The results all come from the improvement of crystal quality of ZnO films.     

Characterization of AISI 4140 borided steels

The present study characterizes the surface of AISI 4140 steels exposed to the paste-boriding process. The formation of Fe₂B hard coatings was obtained in the temperature range 1123-1273 K with different exposure times, using a 4 mm thick layer of boron carbide paste over the material surface. First, the growth kinetics of boride layers at the surface of AISI 4140 steels was evaluated. Second, the presence and distribution of alloying elements on the Fe₂B phase was measured using the Glow Discharge Optical Emission Spectrometry (GDOES) technique. Further, thermal residual stresses produced on the borided phase were evaluated by X-ray diffraction (XRD) analysis. The fracture toughness of the iron boride layer of the AISI 4140 borided steels was estimated using a Vickers microindentation induced-fracture testing at a constant distance of 25 μm from the surface. The force criterion of fracture toughness was determined from the extent of brittle cracks, both parallel and perpendicular to the surface, originating at the tips of an indenter impression. The fracture toughness values obtained by the Palmqvist crack model are expressed in the form K_C(π/2) > K_C > K_C(0) for the different applied loads and experimental parameters of the boriding process.     

Decomposition of thin titanium deuteride films; thermal desorption kinetics studies combined with microstructure analysis

The thermal evolution of deuterium from thin titanium films, prepared under UHV conditions and deuterated in situ at room temperature, has been studied by means of thermal desorption mass spectrometry (TDMS) and a combination of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The observed Ti film thickness dependent morphology was found to play a crucial role in the titanium deuteride (TiD_y) film formation and its decomposition at elevated temperatures. TDMS heating induced decomposition of fine-grained thin Ti films, of 10-20 nm thickness, proceeds at low temperature (maximum peak temperature T_m about 500 K) and its kinetics is dominated by a low energy desorption (E_D = 0.61 eV) of deuterium from surface and subsurface areas of the Ti film. The origin of this process is discussed as an intermediate decomposition state towards recombinative desorption of molecular deuterium. The TiD_y bulk phase decomposition becomes dominant in the kinetics of deuterium evolution from thicker TiD_y films. The dominant TDMS peak at approx. T_m = 670 K, attributed to this process, is characterized by E_D = 1.49 eV.