Topological phases in graphitic cones

The electronic structure of graphitic cones exhibits distinctive topological features associated with the apical disclinations. Ahranov-Bohm magnetoconductance oscillations (period Phi(0)) are completely absent in rings fabricated from cones with a single pentagonal disclination. Close to the apex, the local density of states changes qualitatively, either developing a cusp which drops to zero at the Fermi energy, or forming a region of nonzero density across E(F), a local metallization of graphite.     

Cr adsorption induced magnetism in Bi2Se3 film by proximity effects

Based on first-principles calculations within density functional theory, we studied the effects of Cr adsorption on the electronic and magnetic properties of Bi₂Se₃ topological insulators employing spin–orbit coupling (SOC) self-consistently. Cr atom induces a spin-polarization with total net magnetic moments of 2.157 μ_B (spin up). There is a p-d hybridization between the Cr 3d states and the nearest neighbor Se 4p states. A peak of density of states appears at Fermi level. The electronic structures change and the energy levels split near the Fermi level. No gap opening has been found at the Dirac point of the surface state from the bottom surface.     

Double-walled carbon nanocones: stability and electronic structure

We have applied first-principles calculations, based on the density functional theory, toinvestigate the stability and electronic properties of double-walled carbon nanocones,60°60°, 120°120° and 60°120° with different rotation anglesbetween the walls. We have shown that the most favorable double-walled nanocone studiedhere is that of angles of 60°60°, with rotation angle of 36° and distance between apexes of 4.22 Å.We have found that, the interaction between the walls of rotated double-walled nanoconesintroduce geometric distortion in gap states, such as in Fermi level. These results shouldhave consequences on the field emission properties of double-walled carbon nanocones.Additionally, we also investigated the spin polarization of such structures, and we havefound unpaired electrons, which induces a total spin from 1 and 1/2 for 60°60° and 60°120° double cones, respectively.     

旋转双层石墨烯的电子结构

本文将第一性原理和紧束缚方法结合起来, 研究了层间不同旋转角度对双层石墨烯的电子能带结构和态密度的影响. 分析发现, 旋转双层石墨烯具有线性的电子能量色散关系, 但其费米速度随着旋转角度的减小而降低. 进一步研究其电子能带结构发现, 不同旋转角度的双层石墨烯在M点可能会出现大小不同的的带隙, 而这些能隙会增强双层石墨烯的拉曼模强度, 并由拉曼光谱实验所证实. 通过对比双层石墨烯的晶体结构和电子态密度, 发现M点处带隙来自于晶体结构中的“类AB堆垛区”. 关键词： 旋转双层石墨烯 第一性原理 紧束缚 电子结构     

Electronic structure of carbon nanoparticles

The electronic structure of graphitic nanoparticles is investigated within a gauge field-theory model. The local and total densities of states (DOS) near the pentagonal defects (disclinations) are calculated for three geometries: sphere, cone, and hyperboloid. It is found that the low-energy electron states have a rather specific dependence on both the energy and the distance from a disclination line. In particular, the low-energy total DOS has a cusp that drops to zero at the Fermi energy for disclinations with the Frank index v<1/2, while a region of a nonzero DOS across the Fermi level is formed for v=1/2. The true zero-mode fermion state is found for the graphitic hyperboloid. The appearance of an enhanced charge density near the Fermi level for nanocones with a 60° opening angle (180° disclination) is predicted.     

Origin of charge density wave formation in insulators from a high resolution photoemission study of BaIrO3

We investigate the origin of charge density wave (CDW) formation in insulators by studying BaIrO3 using high-resolution (1.4 meV) photoemission spectroscopy. The spectra reveal the existence of localized density of states at the Fermi level, E(F), in the vicinity of room temperature. These localized states are found to vanish as the temperature is lowered, thereby, opening a soft gap at E(F), as a consequence of CDW transition. In addition, the energy dependence of the spectral density of states reveals the importance of magnetic interactions, rather than well-known Coulomb repulsion effect, in determining the electronic structure thereby implying a close relationship between ferromagnetism and CDW observed in this compound. Also, Ba core level spectra surprisingly exhibit an unusual behavior prior to CDW transition.     

Ab initio calculation of strain effect on the magnetic properties of the thiogermanate [(CH3)4N]2FeGe4S10

The magnetic properties of the thiogermanate TMA(2)FeGe(4)S(10) (TMA=[(CH(3))(4)N](+)), and the influence of large strain are investigated by ab initio density functional theory calculations. An analysis of the electronic structure is provided considering antiferromagnetic (AFM), ferromagnetic (FM) and nonmagnetic configurations for the thiogermanate at the equilibrium states. A small difference in total energy between the FM and AFM states suggests that the thiogermanate TMA(2)FeGe(4)S(10) may possess a low Curie temperature. Changes in electronic structure and magnetic moment of the thiogermanate under strain are closely related to the distortion of FeS(4) tetrahedral units. With the help of a simplified molecule model, we show that, while the origin of the drastic change in magnetism under high isotropic compressions mainly originates from the decrease in the Fe-S interatomic bond length, the changes in the electronic structure between - 10% and + 15% isotropic strains are mainly due to the variations of the interatomic bond angles. Little effect of shear strain on the magnetic properties is found since the FeS(4) tetrahedral units rotate under shear, hence keeping their shape.     

Electrodynamic response of charge carriers in doubly periodic semiconductor <Emphasis Type="Italic">n</Emphasis>-type superlattices in a permanent homogeneous magnetic field

The electromagnetic response of the two-dimensional electron gas of a surface superlattice placed in a perpendicular permanent homogeneous magnetic field is studied. The magneto–optic Kerr and Faraday effects are calculated. The conditions of transparency of model semiconductor structures in the terahertz frequency region are found and the field-induced spin density of the electronic states is calculated. The features of the frequency dependences of complex Kerr and Faraday angles are connected with the symmetry of the spinor states of the charge carriers in a superlattice.     

Spatial distribution of local density of states in vicinity of impurity on semiconductor surface

We present the results of detailed theoretical investigations of changes in local density of total electronic surface states in 2D anisotropic atomic semiconductor lattice in vicinity of impurity atom for a wide range of applied bias voltage. We have found that taking into account changes in density of continuous spectrum states leads to the formation of a downfall at the particular value of applied voltage when we are interested in the density of states above the impurity atom or even to a series of downfalls for the fixed value of the distance from the impurity. The behaviour of local density of states with increasing of the distance from impurity along the chain differs from behaviour in the direction perpendicular to the chain. The article is published in the original.     

Interplay among superconductivity,charge density waves,and magnetism in EuMo6S8

In a one-dimensional metal, the energy of the electrons can always be lowered by opening an energy gap around the Fermi energy (the Peierls instability): all occupied states are then in the lower-energy band, while the higher-energy band is empty. The opening of such a gap requires a structural distortion, resulting in the formation of a charge density wave. In a three-dimensional system, the gapping takes place in the region where the Fermi surface is nested (i.e., large parallel areas of the Fermi surface are spanned by a certain wave vector), giving rise to partial gapping of the Fermi surface, accompanied by a structural distortion. In this case, a charge density wave can coexist with superconductivity. Both charge-density-wave and superconducting transitions involve the formation of an energy gap at the Fermi energy. A charge-density-wave gap is formed at a region of the Fermi surface where there is a high density of electronic states. In such a material, there is also a strong electronphonon interaction. A region with high density of states and a high electron-phonon interaction is just the portion of the Fermi surface that will enhance the superconducting transition temperature, according to the BCS (Bardeen-Cooper-Schrieffer) theory. When a charge-density-wave gap opens up at the Fermi surface these electronic states are no longer available to form Cooper pairs and to enhance the superconducting transition temperature. The opposite is also true; if a superconducting gap opens, the states involved in forming this gap are no longer available to take part in a charge-density-wave transition. It appears that charge density waves and superconductivity compete for the same portion of the Fermi surface and thus inhibit each other. In this paper, we will review a unique situation with respect to the competition between these two ground states and will also discuss how this competition affects the anomalous behavior of critical field in EuMo6S, at high pressure.     

Anisotropic Dirac cones in monoatomic hexagonal lattices: a DFT study

In the last few years, the fascinating properties of graphene have been thoroughly investigated. The existence of Dirac cones is the most important characteristic of the electronic band-structure of graphene. In this theoretical paper, hexagonal monolayers of silicon (h-Si) and germanium (h-Ge) are examined using density functional theory, within the generalized gradient approximation. Our numerical results indicate that both h-Si and h-Ge are chemically stable. The lattice parameters, electronic dispersion relations and densities of states for these systems are reported. The electronic dispersion relations display Dirac cones with the symmetry of an equilateral triangle (the group D₃) in the vicinity of the K-points. Hence, the Fermi velocity depends on the wave vector direction around K-points. Fermi velocities for holes and electrons are significantly different. The maximum and minimum Fermi velocities are also reported.     

SiGe superlattice nanocrystal pure and doped with substitutional phosphorus single atom: Density functional theory study

Ab initio density functional theory is used to simulate electronic structure of hydrogenated SiGe nanocrystal superlattice pure and doped with substitutional P single atom. The results of electronic structure calculations are compared to the same size silicon and germanium nanocrystals. The comparison reveals that the energy gap of the three kinds of nanocrystals is nearly the same in non-relativistic and relativistic limits. Because of large width of gap in the present small nanocrystals the relativistic corrections are not as much important as in the case of bulk crystals. The doping of SiGe nanocrystal with P single atom introduced an impurity level at 4 eV below original conduction band edge. This result is much larger than comparable silicon bulk and nanocrystal doping with P atoms. Results also show that the deep internal angles and bonds in SiGe nanocrystals reach approximately the angles and structure of bulk crystals after nearly three surface layers. A double positively charged layer is located at the Ge terminated surface of SiGe nanocrystal. This layer is enhanced and is accompanied with a large increase of the dipole moment of the nanocrystal in the case of P doped nanocrystal. Due to oscillatory lattice potential in SiGe superlattice, density of states show that bands are broken up to sub-bands in comparison with silicon nanocrystal density of states especially at the conduction band.     

FeVO_4电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理方法研究了三斜结构FeVO_4的结构,基态的能带结构、总态密度和分波态密度.将FeVO_4非共线的螺旋磁结构简化为六种不同的反铁磁结构,通过比较不同自旋构型的总能确定了基态磁结构.能带计算和总态密度结果均显示FeVO_4是能隙为2.19 e V的半导体,与实验结果相符.考虑Fe原子的在位库仑能,FeVO_4的能带结构和态密度都发生变化,说明FeVO_4晶体是一个典型的强关联电子体系.     

Local density of states and interface effects in semimetallic ErAs nanoparticles embedded in GaAs

The atomic and electronic structures of ErAs nanoparticles embedded within a GaAs matrix are examined via cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/XSTS). The local density of states (LDOS) exhibits a finite minimum at the Fermi level demonstrating that the nanoparticles remain semimetallic despite the predictions of previous models of quantum confinement in ErAs. We also use XSTS to measure changes in the LDOS across the ErAs/GaAs interface and propose that the interface atomic structure results in electronic states that prevent the opening of a band gap.     

Electronic structure of Gd-doped MgO

The electronic structure of Gd-doped MgO is investigated using the LSDA+U (local spin density approximation with U-correction) method and compared with the MgO structure. The total density of states obtained accounting for the correlation effects in the 4f shell of gadolinium is found to be formed by the oxygen 2p states at the valence band and the 4f gadolinium occupied states, while the conduction band is represented by a mixture of empty electronic states. Magnetic properties of the calculated Gd-doped MgO are found to be formed solely by the Gd-4f-magnetic moment of about 7μ_B, in good agreement with recent experimental results suggesting a ferromagnetic coupling of the local magnetic moments induced by Gd.     

Ablation of polymer foils for backside opening of thin film layered flexible polymer substrates

For increasing the packing density of electronic devices and enabling 3D wiring, new concepts of interconnection for flexible circuit boards are required. The backside wiring is one innovative concept which, however, requires interconnections from the back to the front side by means of vias.Results on backside opening of polymer foils for exposing a thin metal film deposited at the front side are presented. For the experiments, a thin polyimide foil covered with a thin molybdenum metal film was used. By using mask projection of a pulsed UV-laser beam (248 nm, 20 ns) polymer foil was ablated. The laser ablation process must be adjusted in the manner to avoid damage of the thin metal film, to prevent cones formation at laser ablation, but still enabling the clean ablation of the polymer. The influence of process parameters on the backside opening is discussed and compared with theoretical estimations of the laser-induced temperatures. Using a two-step ablation process applying first high fluences to ablate the main part of the foil and finishing with low laser fluence turns out to be advantageous. This backside opening (BSO) can be used to perform an electrical contact from the backside.     

Surface effects on the magnetic properties of Co2FeAl(0 0 1): An ab initio study

Electronic structures of the Co₂FeAl(0 0 1) surface are studied theoretically via first-principles calculations based on density functional theory. It is found that the minority spin band gap at the Fermi level in bulk Co₂FeAl disappears at the surface due to space localization of the states. However, beneath the surface, the density of states of individual atoms shows a trend of minority spin gap opening at the Fermi level, which indicates that the electronic structures become close to that of bulk Co₂FeAl. The termination of FeAl is more favorable for spin polarization of Co₂FeAl films than that of Co. Accordingly, we present a composite tri-layer model to illustrate the fading of the half-metallic property in Co₂FeAl films against the ideal character in bulk materials.     

Measurement of charged-particle multiplicities in gluon and quark jets in pp collisions at square root of s = 1.8 TeV

We report the first largely model independent measurement of charged particle multiplicities in quark and gluon jets, Nq and Ng, produced at the Fermilab Tevatron in pp collisions with a center-of-mass energy of 1.8 TeV and recorded by the Collider Detector at Fermilab. The measurements are made for jets with average energies of 41 and 53 GeV by counting charged particle tracks in cones with opening angles of theta(c) = 0.28, 0.36, and 0.47 rad around the jet axis. The corresponding jet hardness Q = Ejet theta c varies in the range from 12 to 25 GeV. At Q = 19.2 GeV, the ratio of multiplicities r = Ng/Nq is found to be 1.64+/-0.17, where statistical and systematic uncertainties are added in quadrature. The results are in agreement with resummed perturbative QCD calculations.     

A theoretical study of potential energy curves and spectroscopic constants of VC

Potential energy curves for the various low-lying electronic states of VC have been studied using complete active space multi-configuration self-consistent field (CASMCSCF) followed by first-order and multireference singles and doubles configuration interaction (FOCI, MRSDCI) calculations. The MRSDCI calculations included up to 6 million configurations. Two very low-lying electronic states are found as candidates for the ground state of VC, namely a high spin state ⁴Δ and a low-spin ²Δ state, which is favoured at higher levels. A number of low-lying excited electronic states of VC are predicted, which are yet to be observed. The low-lying electronic states of VC are found to be ionic as inferred from the dipole moments and the charge density calculations. Electron donation and the back-donation process are suggested to be operative in the V-C bond formation.     

Calculation of scanning tunnelling microscopy images for Kr/graphite system

The scanning-tunnelling-microscopy (STM) images of Kr atoms adsorbed on a monolayer graphite sheet (Kr/graphite system) are calculated using the first-principle total-energy electronic structure calculations within the density functional theory in the local density approximation. The results obtained agree well with the observations. It is found that the optimal site of the adsorbed Kr atom is at the top of the centre of the carbon hexagon, and its equilibrium distance from monolayer graphite surface is about 0.335nm. It is shown that the hybridization of C 2p electronic states (π-electronic states) and Kr 4p and 5s electronic states is the main origin of the Fermi-level local density of state.