Fe-Cr-Al合金氧化膜形成机理电子理论研究

通过自编软件建立了Fe-Cr-Al合金表面、氧化膜/基体界面模型,采用递归法计算了合金元素在Fe-Cr-Al合金表面、氧化膜/基体界面的环境敏感镶嵌能、亲和能、结合能、态密度等电子结构参数.从电子层次系统研究了Fe-Cr-Al合金氧化膜的形成机理、稀土元素和杂质硫对氧化膜形成过程及黏附性的影响机理.研究表明Fe-Cr-Al合金中Al的偏聚驱动力远大于Y,Cr.氧化初期氧从合金表面向合金内部扩散,合金内部Al向合金表面扩散,使合金形成富铝、氧表面层;氧与Al间的亲和力较大（亲和能低）,氧原子容易与Al结合生成Al₂O₃保护膜;合金中加入Y后,Y在合金表面偏聚,抑制Al向合金表面扩散,氧化膜的横向生长得到有效控制,从而避免氧化膜皱褶形貌的发生,提高氧化膜的黏附性;合金内部的S通过扩散汇集在基体/氧化膜界面,S使界面区原子的总能增高,总态密度降低,减小了界面的稳定性,进而削弱氧化膜与合金基体的结合力. 关键词： 电子结构 高温氧化 Fe-Cr-Al合金     

Fe-Cr-Al合金高温氧化行为电子理论研究

从电子层面系统研究Fe-Cr-Al合金氧化膜的形成机理,杂质硫对氧化膜黏附性的影响,稀土元素在改善氧化膜黏附性方面的作用,揭示合金氧化的物理本质.研究表明氧使Al在合金表层的环境敏感镶嵌能最低,促使Al原子从合金内部向合金表面扩散,最终在合金表面偏聚.由于氧与Al间的亲和力较大,氧原子易与Al结合生成Al2O3保护膜.杂质S在基体/氧化膜界面的环境敏感镶嵌能较低,可通过扩散偏聚在基体/氧化膜界面,削弱氧化膜与合金基体的结合力.当合金中加入Y后,Y易与S结合形成稳定的硫化物,阻碍S向基体/氧化膜界面的偏聚,显著提高氧化膜的黏附性,提高合金抗高温氧化能力.     

ZA27/CNT界面特性电子理论研究

依据原子结合能定义了界面结合能. 采用递归法计算了纳米管增强锌铝基复合材料中ZA27/CNT界面电子结构，揭示了纳米管在ZA27合金晶界分布的微观物理本质，及其ZA27/CNT弱界面结合的电子层面的原因. 研究发现：金属基体对纳米管增强相上的碳原子态密度影响很大，而纳米管对基体金属中的铝、锌原子影响很小. 碳原子态密度与基体金属原子趋于同化，使纳米管与基体金属结合，但因同化程度不高导致界面结合较弱，影响强化效果. 如果在纳米管装饰或镀上与基体金属性质相近的原子层，会极大改善复合材料的界面结合强度，提高复合材料性能. 关键词： 复合材料 纳米管 电子结构 界面     

铌合金电子结构及其高温氧化行为

为了从电子层面揭示Nb合金高温氧化的物理本质,采用递归法计算了Nb合金的电子态密度、原子镶嵌能、亲和能等电子结构参数,探索Nb合金高温氧化机理.研究表明:氧在Nb中具备较高的扩散速率和溶解度,且氧与Nb较易发生反应,生成氧化物,这使Nb的抗高温氧化性较差.原子镶嵌能的计算结果表明,合金元素Ti,Si,Cr在基体中稳定性较低,易向Nb合金表面扩散,形成富Ti,Si,Cr的表层.合金表层中氧与Nb,Ti,Si,Cr间具有较大亲和性,可以生成相应的氧化物,形成对合金具有保护作用的氧化膜. 关键词： 递归法 高温氧化 Nb合金     

钛铝合金高温氧化机理电子理论研究

为了从电子层面揭示钛铝合金高温氧化的物理本质,采用递归法与Castep相结合的方式, 计算了原子埋置能、亲和能、结合能等电子结构参数,探索合金氧化机理.研究表明: 氧在钛中有较大固溶度,氧原子可以在钛表面的基体内聚集,逐步向深层扩散. 氧与钛具备较强的亲和力,能形成钛的氧化膜.钛基体中铝原子间具有相互吸引力, 能形成铝的原子团簇.铝原子团簇中的钛原子间相互排斥与铝形成化合物. 铝、钛与氧的亲和能相近,不易发生铝的优先氧化,而是同时生成钛的氧化物和铝的氧化物. Al₂O₃比TiO₂的结合能略低,因而更加稳定,铝在TiO₂中有较大的固溶度, 能替换其中的钛形成更稳定的Al₂O₃氧化物.     

材料——材料学科研究进展

利用俄歇电子能谱(AES)研究了高真空下温度和氧对铀铌合金表面成分的影响。结果表明在673K时，氧在合金表面表现出很强的解吸能力，温度加速氧离子、原子或分子向合金体内扩散，加速体内的C和U离子或原子向表面偏折。铀铌合金的高温氧化和室温氧化截然不同。     

Nb-Ti-Al合金高温氧化机理电子理论研究

采用递归法计算了Nb合金的电子态密度、原子镶嵌能、亲和能和团簇能等电子结构参数,研究Nb合金高温氧化机理.研究表明,氧在Nb合金表面的吸附能较低,易在合金表面吸附,并逐渐扩散到Nb合金的基体中.氧在合金基体中镶嵌能为负值,氧的态密度和Nb相似,在Nb中具有很高的溶解度.Ti,Al在合金晶内的镶嵌能均高于各自在合金表面的镶嵌能,Ti,Al从合金内部向合金表面扩散,最终在Nb合金表面偏聚,形成富Ti,Al的表层.团簇能计算结果表明Nb合金表面的Ti,Al原子各自均有聚集倾向,分别形成Ti和Al原子团.氧与合金     

镁合金稀土阻燃机理电子理论研究

通过计算机软件建立镁合金的晶体,液态及其固/液界面模型.采用递归法计算了稀土元素在α-Mg、固/液界面、镁液态等原子环境中的环境敏感镶嵌能,定义并计算了Mg,La及Y与氧的原子亲和能.计算结果表明：La,Y在镁晶体中的环境敏感镶嵌能较高,不能稳定固溶于晶体中,因此在固体中的溶解度较小.合金凝固时稀土元素扩散到环境能较低的液体中,向液面聚集.由于稀土与氧的原子亲和能低于镁与氧的亲和能(镁、稀土与氧的亲和能分别为Mg-O：-14.9338 eV,La-O：-19.0608 eV,Y-O：-19.5050 eV 关键词： 电子结构 阻燃 Mg合金     

钛的腐蚀与钝化机理电子理论研究

建立了位错塞集引发的裂纹原子集团模型,采用递归法计算了钛的电子结构参量,并研究了氧、氯、钯等元素对钛电子结构的影响.发现氧能降低费米能级附近的态密度,使钛的物理化学活性降低.氧降低钛的原子结合能,与钛原子之间有较大的亲和力,易与钛反应形成氧化膜.Cl在钛中的稳定性及与钛的亲和力均不及氧,很难取代钛表层中的氧,使得钛的氧化膜非常稳定,不会出现过钝化现象.Pd在钛中裂纹处的环境敏感镶嵌能较低,易扩散到裂纹处,且Pd元素使H在裂纹处的环境敏感镶嵌能明显升高,有效减小H向裂纹处的扩散,提高钛的应力腐蚀抵抗力. 关键词： 钛 腐蚀 钝化 电子结构     

Bi，Sb及稀土元素对AZ91镁合金高温性能影响机理研究

利用大角重位点阵概念建立了AZ91镁合金基体(α相)和镁［0001］对称倾斜晶界原子结构模型,应用实空间的连分数方法计算了体系的结构能,环境敏感镶嵌能以及相互作用能.结果发现,在镁合金基体中,Al和稀土形成团簇时比较稳定,Al,Bi或Sb与稀土形成团簇时不稳定.Bi或Sb和稀土元素同时存在于AZ91镁合金中时,一方面Bi或Sb将可与RE结合形成RE₂Bi(RE₂Sb)或RE-Bi(RE-Sb)化合物弥散分布于晶界,另一方面镁合金基体中会形成Al_{11关键词： 电子理论 晶界偏聚 合金元素 高温性能}     

氧化铝与Al(100)基体间界面原子结构研究

本文介绍了用MeV离子散射和沟道效应研究单晶铝表面无定型氧化层与基体之间界面原子结构的方法。报道了Al₂O₃/Al(100)界面原子结构的实验结果。实验表明,在纯氧气氛围中400℃下生成的氧化铝膜,铝和氧原子浓度比例严格为2与3之比;Al₂O₃膜和Al(100)基体之间的界面极其陡峭,氧化铝膜下Al(100)基体表面的再构层不大于一个原子层。由实验测量与用Monte Carlo方法计算结果比较,得到再构层原子离开原来晶 关键词：     

Interface state density and barrier height improvement in ammonium sulfide treated Al2O3/Si interfaces

The HF treatment removes the native oxide and lays behind the dangling bonds over the Si surface which causes the increment in density of interface traps (D_it) through the direct deposition of high-k dielectric on Si. Here, we propose the facile method for reduction of interface traps and improvement in barrier height with the (NH₄)₂S treatment on Al₂O₃/Si interfaces, which can be used as the base for the non-volatile memory device. The AFM was used to optimize the treatment time and surface properties, while XPS measurements were carried out to study the interface and extract the barrier height (Φ_B). The short period of 20 s treatment shows the improvement in the barrier height (1.02 eV), while the one order reduction in the D_it (0.84 × 10¹² cm²/eV) of sulfur passivated Al/Al₂O₃/Si MOS device. The results indicate the favorable passivation of the dangling bonds over the Si surfaces covered by sulfur atoms.     

Free Surface and Interface Thermodynamics of Liquid Nickel in Contact with Alumina

Sessile drop experiments of Ni and Ni(2at.%Al) were conducted under controlled working conditions, at 1500°C, P(O₂) 10^–9 Torr. It is shown that Al and oxygen atoms engaged in the capillary driven mass transport at the interface have a significant impact on the surface/interface thermodynamics. The surface energy of liquid Ni determined from experiments in which Ni comes into contact with Al₂O₃ is significantly lower than that of high purity Ni, due to the segregation of Al. The free energy of segregation of Al to the free surface of Ni ( G _S) was found to range from –164 to –152 kJ/mol, indicating a relatively strong tendency for segregation of Al to the free surface of Ni(Al). It is proposed that an Al(O)-rich liquid layer forms adjacent to the Ni-Al₂O₃ interface, which improves interfacial adhesion. In the Ni(Al)-Al₂O₃ system, an increase in the Al content of the alloy leads to the improvement of both wetting and adhesion of the alloy on the ceramic, correlating with the improvement in the interface strength after solidification.     

First-principles study of the α-Al2O3(0001)/Cu(111) interface

Adhesive energetics and interfacial electronic structures have been computed from first principles for the Cu/Al₂O₃ interface. Recent transmission electron microscopy results of Cu grown by molecular beam epitaxy on Al₂O₃(0001) were helpful in modelling the interfacial atomic structure. We found that Al₂O₃(0001) relaxation effects can lower the work of adhesion W _ad by over a factor of 3. Our computed W _ad value is in reasonably good agreement with experiment, being somewhat larger, as expected from our assumption of a coherent interface. One might begin to understand this metal/ceramic adhesion as a competition between Cu and Al for oxide formation, which is easily won by Al. However this simple picture is complicated by several indications of a significant metallic/covalent component to the Cu/Al₂O₃ adhesive bond.     

Properties of an Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Si interface

The phase chemical composition of an Al₂O₃/Si interface formed upon molecular deposition of a 100-nm-thick Al₂O₃ layer on the Si(100) (c-Si) surface is investigated by depth-resolved ultrasoft x-ray emission spectroscopy. Analysis is performed using Al and Si L_{2, 3} emission bands. It is found that the thickness of the interface separating the c-Si substrate and the Al₂O₃ layer is approximately equal to 60 nm and the interface has a complex structure. The upper layer of the interface contains Al₂O₃ molecules and Al atoms, whose coordination is characteristic of metallic aluminum (most likely, these atoms form sufficiently large-sized Al clusters). The shape of the Si bands indicates that the interface layer (no more than 10-nm thick) adjacent to the substrate involves Si atoms in an unusual chemical state. This state is not typical of amorphous Si, c-Si, SiO₂, or SiO_x (it is assumed that these Si atoms form small-sized Si clusters). It is revealed that SiO₂ is contained in the vicinity of the substrate. The properties of thicker coatings are similar to those of the 100-nm-thick Al₂O₃ layer and differ significantly from the properties of the interfaces of Al₂O₃ thin layers.     

Co on thin Al2O3 films grown on Ni3Al(1 0 0)

The growth of Co on thin Al₂O₃ layers on Ni₃Al(1 0 0) was investigated by Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), and scanning tunneling microscopy. At 300 K, Co grows in three-dimensional clusters on top of the Al₂O₃ layer. A defect structure of the alumina layer plays a crucial role during the early stage of Co growth. After deposition of 10 Å of Co, a complete screening of the dipoles of the Al₂O₃ layer due to the Co film is found in the EELS measurements. Annealing the Co film reveals a process of coalescence of Co clusters and, above 700 K, diffusion of the Co atoms through the oxide film into the substrate takes place.