用一维光子带隙结构增强硫化镉双光子吸收研究

用真空镀膜方法制备了含有单个CdS缺陷层的具有不同周期和结构参量的TiO2／SiO2一维光子晶体。用抽运一探测技术研究了CdS缺陷层的双光子吸收（TPA）现象。实验结果表明：一维光子晶体中CdS缺陷层的双光子吸收显著增强。不同周期和结构参量的一维光子晶体中CdS缺陷层的双光子吸收系数不同。双光子吸收的增强来源于由光局域化导致的缺陷层的电场强度的增加。缺陷层电场强度与一维光子晶体的结构有关,如周期,光子带隙的位置与宽度及缺陷模式等因素都会影响缺陷层电场强度。采用四分之一波长的高低折射率介质层和与入射波长匹配的缺陷模可以得到最大的缺陷层电场强度。     

Electrical breakdown of thin polymer films

Data are presented on the dielectric strength of thin polymer films. The conclusion is drawn that the electron avalanche concept is inapplicable to the breakdown of thin films. It is proposed to consider electrical breakdown as a consequence of an abrupt local field enhancement induced by evolution of the space charge injected into the polymer from electrodes. It is shown that the lifetime of polymer films depends exponentially on electric field strength.     

Pre- and post-breakdown electrical studies in ultrathin Al2O3 films by conductive atomic force microscopy

The loss of local dielectric integrity in ultrathin Al₂O₃ films grown by atomic layer deposition is investigated using conducting atomic force microscopy. I–V spectra acquired at different regions of the samples by constant and ramping voltage stress are analyzed for their pre- and post-breakdown signatures. Based on these observations, the thickness dependent dielectric reliability and failure mechanism are discussed. Our results show that remarkable enhancement in breakdown electric field as high as 130 MV/cm is observed for ultrathin films of thickness less than 1 nm.     

Electrical characteristics of BaTiO3/ Bi0.5K0.5TiO3 multilayered thin films synthesized via metalloorganic decomposition

Multilayered BaTiO₃(BTO)/Bi_0.5K_0.5TiO₃ (BKT) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates using a metalloorganic decomposition process. XRD investigation of the resultant BTO/BKT multilayered thin films shows that they retain a perovskite-related structure type. They also exhibit a well-defined, polarization–electric field hysteresis loop with a measured remnant polarization (2P_r) of 5 µC/cm² at an applied electric field of 250 kV/cm. The measured dielectric constant and dielectric loss at 10 kHz is 470 and 0.07 respectively. These multilayer BTO/BKT films maintain an excellent fatigue-free character even after 10⁹ switching cycles. The mechanism associated with the enhancement of the electrical properties of the synthesized BTO/BKT films is also discussed.     

Improvement of dielectric （Ba,Sr）TiO3 thin tunability and loss tangent of films with K doping

Ba0.6Sr0.4 TiO3 thin films doped with K were deposited on Pt/Ti/SiO2 /Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Ba0.6Sr0.4 TiO 3 thin films have been studied in detail. The K content in Ba0.6Sr0.4TiO3 thin films has a strong influence on the material’s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Ba0.6Sr0.4 TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4 TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.     

Enhanced functionalities of DNA thin films by facile conjugation with conducting polymers

In this study, we discuss a method to embed PEDOT:PSS into DNA with a designated concentration of PEDOT:PSS and construction of PEDOT:PSS-embedded DNA thin films. In order to shed light on the interaction between PEDOT:PSS and DNA, optical spectroscopy measurements were performed. DNA-PEDOT:PSS thin films showed a broad absorption band around 800 nm which was associated with PEDOT:PSS. The electrical properties of DNA-PEDOT:PSS thin films were assessed. A significant enhancement in current for DNA-PEDOT:PSS thin films DNA was observed which agreed with the decrement in band gap of DNA-PEDOT:PSS thin films. For the energy storage capability and dielectric constant of DNA-PEDOT:PSS thin films, capacitance measurements were conducted. Frequency-dependent capacitance indicated enhancement in the capacitance and dielectric constant by electric polarization of PEDOT:PSS in a DNA thin film. Our approach may assist in development of various biosensors and electronic devices with specific functionalities based on biomaterials and conducting polymer complexes.     

Enhanced dielectric permittivity in poly (vinylidene) fluoride/multiwalled carbon nanotubes nanocomposite thin films fabricated by pulsed laser deposition

The fabrication of high quality thin films of poly (vinylidene fluoride) embedded with multiwalled carbon nanotubes using pulsed laser deposition technique is reported. The prepared films were characterized for structural, morphology and dielectric properties. The morphology analysis revealed uniform dispersion of multiwalled carbon nanotubes throughout the polymer matrix. X-ray diffraction results suggested that the poly (vinylidene fluoride) film is in amorphous phase while addition of multiwalled carbon nanotubes showed presence of crystalline peaks in the nanocomposites films. It was interesting to note that the nanocomposite films exhibits significant enhancement of the ferroelectric β-phase as evidenced by the X-ray diffraction and Fourier transform infrared spectroscopy results. The dielectric analysis shows a remarkable enhancement in the dielectric permittivity of nanocomposites with lower loss and conductivity level. The results can be attributed to the formation of minicapacitor network and relatively higher percolation threshold in the nanocomposites.     

Effects of microstructure on the properties of ferroelectric lead zirconate titanate (PZT) thin films

Lead zirconate titanate (PZT) thin films were prepared with pulsed laser deposition and sol–gel techniques. The PZT films fabricated by these two techniques have similar randomly oriented single perovskite phases, but the film derived from the pulsed laser deposition exhibits a more compact and flat morphology. The dielectric, ferroelectric, and piezoelectric properties of the two kinds of films are comparatively characterized and discussed. It is observed that a denser microstructure would lead to a significantly higher dielectric constant and remanent polarization and a much lower coercive electric field, but only a relatively slight enhancement on the piezoelectric constant. The film with a looser microstructure could have a substantially higher piezoelectric voltage constant g₃₃ due to the much lower dielectric constant. Our results and discussion provide a better understanding of the relationship between the microstructure and the film properties, which is essential in order to tailor the microstructure and hence determine the performance aiming at a specific application. PACS 68.55.Jk; 77.22.-d; 77.65.-j     

激光晶化形成纳米硅材料的场电子发射性质研究

利用KrF准分子激光退火超薄非晶硅膜,并结合热退火技术制备了单层纳米硅薄膜并研究了薄膜的场电子发射性质.在晶化形成的纳米硅薄膜中可以观测到稳定的场电子发射现象,其开启电场从原始淀积的非晶硅薄膜的17V/μm降低到8.5V/μm,而场发射电流密度可以达到0.1mA/cm².激光晶化后形成的纳米硅材料的场电子发射特性的改善可以从薄膜表面形貌的改变以及高密度纳米硅的形成所导致的内部电场增强作用来解释. 关键词： 纳米硅 场发射 激光晶化     

Broadband absorption enhancement with ultrathin MoS_2 film in the visible regime

The broadband absorption enhancement effect in ultrathin molybdenum disulfide(Mo S2)films is investigated.It is achieved by inserting the Mo S2 film between a dielectric film and a one-dimensional silver grating backed with a silver mirror.The broadband absorption enhancement in the visible region is achieved,which exhibits large integrated absorption and short-circuit current density for solar energy under normal incidence.The optical properties of the proposed absorber are found to be superior to those of a reference planar structure,which makes the proposed structure advantageous for practical photovoltaic application.Moreover,the integrated absorption and short-circuit current density can be maintained high for a wide range of incident angles.A qualitative understanding of such broadband absorption enhancement effect is examined by illustrating the electromagnetic field distribution at some selected wavelengths.The results pave the way for developing high-performance optoelectronic devices,such as solar cells,photodetectors,and modulators.     

Microwave measurement of the permittivity of ferroelectric films by electrodeless and coplanar waveguide methods

Ferroelectric films on dielectric substrates prepared by reactive rf sputtering have been studied. The temperature and external electric field dependencies of the permittivity of the films are deduced. It is shown that deposition of metallic electrodes onto the surface of the film leads to an increase in the permittivity and to an enhancement of the dependency of on temperature and the external electric field. The observed effects may be explained by the formation of an electrode-film interface layer.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 8–12, April, 1990.     

Optical near-field distribution in an asymmetrically illuminated tip–sample system for laser/STM nanopatterning

In surface nano-patterning using an atomic force microscope (AFM) tip in scanning tunnelling microscopy (STM) mode and illuminated by a laser, two controversial physical mechanisms exist in the literature: the field-enhancement (FE) model and the thermal-induced mechanical contact (TMC) model. Due to the presence of evanescent waves in the optical near-field, the exact calculation of the field distribution of the tip–sample system in micro/nano scales becomes complicated. There is a lack of understanding of the asymmetrically illuminated tip–sample system. In this paper, full 3D finite-difference time-domain (FDTD) analysis was carried out to investigate the field distribution in different tip–sample systems. The effects of different tip/sample materials (either dielectric or plasmonic material), the gap distance, and laser incidence angles on the field distribution/enhancement have been studied. For the first time, we have demonstrated two new effects which are helpful in distinguishing the controversial mechanisms: (1) on the sample surface, the field peak position has a shift away from the tip-axis at large angles of incidence, and (2) the field enhancement could depend strongly on the horizontal component (perpendicular to tip-axis) of the incident wave instead of the vertical component (along tip-axis). The optimal incident angle is around 30° for the maximum field under the tip. The existence of field-distribution nodes on the 3D tip surface that leads to the in-homogenous heating of the tip is also predicted. PACS 81.16.Mk; 61.80.Ba; 81.16.Rf; 81.65.Cf     

The magnetization model of multilayered composite thin films: Beyond the effective-medium theories

Multilayered composites consisting of many thin ferromagnetic films with in-plane magnetic anisotropy separated by non-magnetic dielectric layers of different sizes are experimentally and theoretically investigated. Thin samples as well samples with transverse sizes comparable with longitudinal ones are used. The measured static magnetic properties of the bulk sample are found to be different from the properties of constituent thin films. This is an evidence for strong interactions between the magnetic layers in the sample, which interact at distances exceeding greatly the distance between adjacent magnetic layers. A theoretic model is developed taking into account magneto-dipole interactions between iron films in a multi-layer system. The model explains the anomalously high demagnetization field of the sample observed in the measurements.     

Analysis of the electric field behavior in the vicinity of a triple junction,using finite elements method computational simulations

The authors studied the electric field behavior in the vicinity of a triple junction, composed by metal, vacuum and dielectric parts, using computational simulations. A bi-dimensional model was constructed using ANSYS MAXWELL to analyze the magnitude of the electric field as a function of the contact angles of the materials. The results showed that a field enhancement or reduction could occur in vacuum for certain contact angles. The influence of the dielectric permittivity was also investigated, and the conclusions showed that the maximum electric field enhancement is proportional to the dielectric permittivity.     

Dielectric properties of multilayered SrTiO3 thin films with graded oxygen vacancy concentration

SrTiO₃ (STO) thin films were homo-epitaxially grown on Nb-doped STO substrates at varying oxygen pressures, and the effect of oxygen vacancy concentration on the dielectric properties of the STO thin films was studied and is presented herein. Although the STO thin films with low oxygen vacancy concentration demonstrated low zero-bias permittivity, low dielectric tunability, and high dielectric dissipation, the STO thin films, however, could withstand a large electric field. While the STO thin films with high oxygen vacancy concentration exhibited reduced dielectric loss and high dielectric tunability, they exhibited a low breakdown electric field. In order to make use of the respective advantages of the STO thin films with different oxygen vacancy concentrations, a trilayered structure was obtained by varying the oxygen pressure during deposition and combining one thin STO layer with large oxygen vacancy concentration sandwiched by two STO thin films with low oxygen vacancy concentration. The microstructure and dielectric properties of the trilayer were then studied. X-ray diffraction analysis indicated that the trilayer was a relaxed STO multilayer formed by two STO thin layers with different lattice parameters. An improved optimization of high tunability and low loss was achieved in the relaxed trilayer. PACS 77.84.Bw; 68.55; 77.22.Ch; 68.35.Ct; 74.80.Dm     

The theory of SERS on semiconductor and dielectric substrates

It is demonstrated that the reason for SERS on dielectric and semiconductor substrates is enhancement of the electric field in the regions of the tops of surface roughness with a very small radius or a very large curvature. The enhancement depends on the dielectric constant of the substrate and is stronger for a larger dielectric constant. It is indicated that the enhancement on dielectrics and semiconductors is weaker than on metals with the same modulus of the dielectric constant. The result obtained is confirmed by experimental data on the enhancement coefficients obtained for various semiconductor and dielectric substrates.     

Effect of Ar bombardment on the electrical and optical properties of low-density polyethylene films

The influence of low-energy Ar ion beam irradiation on both electrical and optical properties of low-density polyethylene (LDPE) films is presented. The polymer films were bombarded with 320 keV Ar ions with fuences up to 1×10¹⁵ cm^?2. Electrical properties of LDPE films were measured and the effect of ion bombardment on the DC conductivity, dielectric constant and loss was studied. Optically, the energy gap, the Urbach’s energy and the number of carbon atoms in a cluster were estimated for all polymer samples using the UV–Vis spectrophotometry technique. The obtained results showed slight enhancement in the conductivity and dielectric parameters due to the increase in ion fluence. Meanwhile, the energy gap and the Urbach’s energy values showed significant decrease by increasing the Ar ion fluence. It was found that the ion bombardment induced chain scission in the polymer chain causing some carbonization. An increase in the number of carbon atoms per cluster was also observed.     

Dielectric enhancement in pulsed-laser-deposited (Pb,Sr)TiO3/(Pb,La)TiO3 multilayered films

Multilayered (Pb_0.5Sr_0.5)TiO₃(PST)/Pb_0.8La_0.2TiO₃(PLT)/PST and PLT/PST/PLT films were prepared on platinum coated silicon substrates by pulsed laser deposition. Significant enhancement of the dielectric constant over the whole temperature region from 30 °C up to 220 °C has been observed for both multilayers with respect to the identically prepared single-component PST and PLT films. However, larger frequency dispersion of dielectric properties has also been obtained in the multilayers. This effect is attributed to the compositional fluctuation revealed by the atomic interdiffusion in the interface regions of the multilayers. Thermally and electric-field driven space charges at relative low temperature and low electric field were found in the PLT/PST/PLT and PLT films, attributed to the substitution of La³⁺ non-isovalent for Pb²⁺ in these films. PACS 81.15.Fg; 42.70.Mp; 79.60.Jv     

Averaged local field intensities in composite films

The photophysical properties of molecules adsorbed in composite films (e.g. surface island films) depend on the local electromagnetic field within the film. The ratio between the average field intensity 〈|E|²〉 in the film and the intensity |E_I|² associated with the incident field is a measure of the electromagnetic contribution to the surface influence on molecular photophysical phenomena. This ratio depends on the film composition and morphology, on the dielectric properties of the pure components making the film and on the frequency, direction and polarization of the incident radiation. Calculations of this ratio as a function of these parameters for several models of composite films are presented. Image interactions and retardation effects as well as radiative damping and finite size contributions to the dielectric response of the films are taken into account. In addition, an estimate of the field inhomogeneity within the film is obtained by calculating also the ratio 〈|E|²〉_shell/|E_I|² associated with the field in thin shells surrounding the dielectric particles which constitute the film.     

Magnetic field annealing effects on self-oriented BiFeO3 thin films prepared by chemical solution deposition

Self-oriented BiFeO₃ (BFO) thin films are prepared via chemical solution deposition method with magnetic field in-situ annealing process. The effects of magnetic annealing on the microstructure, magnetic and dielectric properties as well as magnetoelectric coupling effect of the BFO thin films are investigated. With increasing the annealing magnetic field, the crystallization quality, texture, grain boundary connectivity and densification of the films are enhanced, which is attributed to the improvement of connection and diffusion of components. The magnetization of the field-annealing films and dielectric constant as well as remanent polarization increases with increasing the strength of annealing magnetic field. In addition, it is observed that magnetocapacitance value of the magnetic-field-annealing BFO thin film is higher than the non-field-annealing one. Moreover the BFO thin films annealed at 3 kOe magnetic field show the magnetoelectric effect with 4% under 2 kOe at room temperature.