| Improvement of dielectric （Ba,Sr）TiO3 thin tunability and loss tangent of films with K doping |
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| 引用本文： | 张伟杰,戴建明,朱雪斌,常青,刘强春,孙玉平.Improvement of dielectric （Ba,Sr）TiO3 thin tunability and loss tangent of films with K doping[J].中国物理 B,2012(9):495-499. |
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| 作者姓名： | 张伟杰 戴建明 朱雪斌 常青 刘强春 孙玉平 |
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| 作者单位： | Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant Nos. 10874051 and 50802096） and the Innovation Project for Young Talents of Hefei Institutes of Physical Science, Chinese Academy of Sciences （Grant No. O84N391123）. |
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| 摘 要： | Ba0.6Sr0.4 TiO3 thin films doped with K were deposited on Pt/Ti/SiO2 /Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Ba0.6Sr0.4 TiO 3 thin films have been studied in detail. The K content in Ba0.6Sr0.4TiO3 thin films has a strong influence on the material’s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Ba0.6Sr0.4 TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba0.6Sr0.4 TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.
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| 关 键 词： | K-doped (Ba Sr)TiO 3 thin films chemical solution deposition dielectric properties tun-ability |
Improvement of dielectric （Ba,Sr）TiO3 thin tunability and loss tangent of films with K doping |
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| Zhang Wei-Jie,Dai Jian-Ming,Zhu Xue-Bin,Chang Qing,Liu Qiang-Chun,and Sun Yu-Ping.Improvement of dielectric （Ba,Sr）TiO3 thin tunability and loss tangent of films with K doping[J].Chinese Physics B,2012(9):495-499. |
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| Authors: | Zhang Wei-Jie Dai Jian-Ming Zhu Xue-Bin Chang Qing Liu Qiang-Chun and Sun Yu-Ping |
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| Affiliation: | Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China |
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| Abstract: | Ba0.6Sr0.4 TiO3 thin films doped with K were deposited on Pt/Ti/SiO2 /Si substrates by the chemical solution deposition method. The structure, surface morphology and the dielectric and tunable properties of Ba0.6 Sr0.4 TiO 3 thin films have been studied in detail. The K content in Ba 0.6Sr0.4TiO3 thin films has a strong influence on the material’s properties including surface morphology and the dielectric and tunable properties. It was found that the Curie temperature of K-doped Ba0.6Sr0.4TiO3 films shifts to a higher value compared with that of undoped Ba0.6Sr0.4TiO3 thin films, which leads to a dielectric enhancement of K-doped Ba 0.6Sr0.4 TiO3 films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices. |
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| Keywords: | K-doped （Ba Sr）Ti03 thin films chemical solution deposition dielectric properties tun-ability |
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