超电容储能电极材料的密度泛函理论研究

由于量子限域效应和态密度的限制,石墨烯、硅烯等二维材料的量子电容在费米能级附近趋近于零.基于密度泛函理论的第一性原理研究发现,掺杂和吸附使石墨烯等二维电极材料的电子结构得以有效的调制,它促进狄拉克点附近局域电子态的形成和/或费米能级的移动,从而使量子电容得到了提高.比较Ti (Au, Ag,Cu, Al)和3-B (N, P, S)掺杂单空位石墨烯(硅烯,锗烯)的量子电容,发现3-N掺杂单空位石墨烯和Ti原子吸附单空位硅烯、锗烯的量子电容明显得到了提升,量子电容分别为118.42μF/cm2, 79.84μF/cm2和76.54μF/cm2.另外还研究了3-N掺杂三种烯类的浓度效应,随掺杂浓度的增加,量子电容呈增加趋势.通过研究各掺杂体系的热力学稳定性问题,发现Ti是最稳定的吸附原子,因为Ti和C原子之间可以形成强键.在B, N, P, S掺杂单空位硅烯和锗烯中, S是最稳定的掺杂原子,而对于石墨烯, N掺杂的形成能最低,量子电容最高.上述二维电极材料的理论模拟计算为超级电容器和场效应晶体管中的实际应用做出了探索性的工作.     

N、P掺杂硼烯/石墨烯异质结的密度泛函理论研究

采用基于密度泛函理论的第一性原理计算方法系统研究了氮、磷掺杂对硼烯/石墨烯异质结的几何结构和电子性质的影响.结果表明,相较完整硼烯/石墨烯异质结的金属特性,氮、磷掺杂的硼烯/石墨烯异质结均表现为半导体特性.室温下的分子动力学模拟进一步论证了相关体系的动力学稳定性.研究结果能够为硼烯/石墨烯异质结在新型二维半导体材料中的应用提供参考价值.     

N/B掺杂石墨烯的光学与电学性质

石墨烯因其独特的化学成键结构而拥有出色的化学、热学、机械、电学、光学特性.由于石墨烯为零带隙材料,限制了其在纳电子学领域的发展.因此,为了拓宽石墨烯的应用范围,研究打开石墨烯带隙的方法显得尤为重要.本文构建了本征石墨烯、N掺杂石墨烯、B掺杂石墨烯三种模型,研究了本征石墨烯和不同掺杂浓度下的N/B掺杂石墨烯的能带结构、电子态密度及光学与电学性质,包括吸收谱、反射谱、折射率、电导率和介电函数等.研究结果显示:1)本征石墨烯费米能级附近的电子态主要是由C-2p轨道形成,而N/B掺杂石墨烯费米能级附近的电子态主要是由C-2p和N-2p/B-2p轨道杂化形成;2)N/B掺杂可以引起石墨烯费米能级、光学与电学性质的改变,且使狄拉克锥消失,进而打开石墨烯带隙;3)N/B掺杂可以引起石墨烯光学和电学性质的变化,且对吸收谱、反射谱、折射率、介电函数影响较大,而对电导率影响较小.本文的结论可为石墨烯在光电子器件中的应用提供理论依据.     

门电压控制的硅烯量子线中电子输运性质

硅烯是由单层硅原子形成的二维蜂窝状晶格结构,具有石墨烯类似的电学性质,由于硅烯中存在比较强的自旋轨道耦合而备受关注.本文利用非平衡格林函数方法研究了门电压控制的硅烯量子线中电子输运性质和能带结构.研究发现,只有在较强的门电压下,而且硅烯量子线具有较好的锯齿形或扶手椅形边界而不存在额外硅原子时,硅烯量子线中才存在无能隙的自旋极化边缘态.另外,计算结果表明这种门电压控制的硅烯量子线中边缘态在每个能谷处自旋是极化的.这些计算结果将为实验上利用电场制作硅烯纳米结构提供理论支持.     

电场作用下P掺杂硅烯选择性吸附CH_4的第一性原理计算

在煤层气中选择性吸附和捕捉甲烷分子,对提高煤矿安全具有十分重要的意义.本文采用第一性原理计算的方法,研究了外加电场作用下P掺杂硅烯对甲烷分子的选择性吸附性能.结果表明:正电场作用下,P掺杂硅烯与甲烷分子之间产生较强的化学吸附,能够快速捕获甲烷分子.当关闭外加电场时,P掺杂硅烯与甲烷分子之间则为微弱的物理吸附,甲烷分子很容易实现脱附.同时还发现,外加电场作用下,P掺杂硅烯与氮气、氧气及水之间的吸附均属于物理吸附,表明P掺杂硅烯可以在这些混合气体中实现甲烷气体的选择性吸附. P掺杂硅烯有望成为选择性好的甲烷传感、捕获新材料.     

B、N掺杂对钠在石墨烯上吸附性能的影响

采用基于密度泛函理论的第一性原理方法,研究了本征石墨烯及缺陷石墨烯对Na原子的吸附行为.主要研究了三种石墨烯:本征石墨烯、B掺杂的石墨烯和N掺杂的石墨烯.结果表明,与本征石墨烯相比,B掺杂的石墨烯和N掺杂的石墨烯在吸附能、电荷密度、态密度和储钠量方面表现出很大的差异.B掺杂的石墨烯对Na原子的吸附能是-1.93 e V,约为本征石墨烯对Na原子吸附能的2.7倍;与本征石墨烯相比,N掺杂的石墨烯对Na原子的吸附能明显增大.态密度计算结果表明,Na原子与B掺杂的石墨烯中的B原子发生轨道杂化,而本征石墨烯和N掺杂的石墨烯中不存在轨道杂化现象.B掺杂的石墨烯对Na原子的吸附量是3个,与本征石墨烯相比显著提高.因此,B掺杂的石墨烯有望成为一种新型的储钠材料.     

B、N、S掺杂石墨烯表面质子吸附的第一性原理研究

表面吸附是石墨烯中质子(H~+)输运的基础步骤.本文基于第一性原理计算研究了B、N、S掺杂对石墨烯表面H~+吸附行为的影响.结果表明,B、N、S掺杂对石墨烯的晶体结构、内聚能及电子性质有重要影响,且影响程度与掺杂元素的性质密切相关,进而导致对石墨烯表面H~+吸附行为产生不同程度的影响.从吸附能的观点看,N、B、S掺杂对石墨烯表面H~+的吸附有利.研究结果对石墨烯在氢贮存、氢同位素分离、燃料电池等领域的应用具有重要的指导意义.     

类石墨烯锗烯研究进展

近年来,伴随石墨烯研究的深入开展,考虑到兼容半导体工业,构筑类石墨烯锗烯并探究其奇特电学性质已成为凝聚态物理领域的研究前沿.本文首先简要介绍了锗烯这一全新二维体系的理论研究进展,包括锗烯的几何结构、电子结构及其调控以及它们之间的关系.理论研究表明,因最近邻原子间距大,锗烯比硅烯更难构筑,实验上构筑锗烯颇具挑战性.针对这一问题,介绍了实验上制备锗烯的一些进展,重点介绍了金属表面外延制备锗烯,并对本征锗烯的制备及其在未来纳电子学器件的潜在应用做出了展望.     

B、N掺杂对钠在石墨烯上吸附性能的影响

采用基于密度泛函理论的第一性原理方法,研究了本征石墨烯及缺陷石墨烯对Na原子的吸附行为。主要研究了三种石墨烯：本征石墨烯、B掺杂的石墨烯和N掺杂的石墨烯。结果表明,与本征石墨烯相比,B掺杂的石墨烯和N掺杂的石墨烯在吸附能、电荷密度、态密度和储钠量方面表现出很大的差异。B掺杂的石墨烯对Na原子的吸附能是-1.93 eV,约为本征石墨烯对Na原子吸附能的2.7倍;与本征石墨烯相比,N掺杂的石墨烯对Na原子的吸附能明显增大。态密度计算结果表明,Na原子与B掺杂的石墨烯中的B原子发生轨道杂化,而本征石墨烯和N掺杂的石墨烯中不存在轨道杂化现象。B掺杂的石墨烯对Na原子的吸附量是3个,与本征石墨烯相比显著提高。因此,B掺杂的石墨烯有望成为一种新型的储钠材料。     

Ⅲ-Ⅳ-Ⅴ族原子掺杂对五元环石墨烯电学性能的影响（英文）

本文基于第一性原理计算研究了一种以五元环作为基本结构单元所构成的碳同素异性体--五元环石墨烯.五元环石墨烯具有准直接带隙的特征.本文讨论了三四五族中的原子替换掺杂五元环石墨烯后对其结构和禁带宽度的影响,其中,硼原子和氮原子掺杂后五元环石墨烯呈现金属特性;硅原子掺杂后的五元环石墨烯结构将在纳米电子器件领域有应用的前景.     

掺杂硅烯吸附CO分子的第一性原理研究

硅烯具有独特的电子、光学、热学、力学以及量子特性,在电子器件、电极材料、储氢材料、催化剂和气体传感器等领域有巨大的潜在应用价值.本文采用基于密度泛函理论的第一性原理计算方法,利用Materials Studio软件中的CASTEP程序包对硅烯与CO分子之间的吸附行为进行了研究.重点研究了硅烯掺杂方式、CO分子吸附构型及硅烯空位缺陷浓度对CO分子吸附的影响,研究结果表明：1)空位缺陷硅烯对CO分子的吸附能力最强;2)碳原子垂直朝向空位缺陷硅烯更有利于CO分子的吸附;3)硅烯对CO分子的吸附能力随其空位浓度的增加显著增强;4)空位硅烯向CO分子转移电荷,电荷转移量与二者的吸附作用强弱呈正相关.该研究可为硅烯基CO气体传感器的设计提供理论指导.     

Growth mechanism and modification of electronic and magnetic properties of silicene

Silicene, a monolayer of silicon atoms arranged in a honeycomb lattice, has been undergoing rapid development in recent years due to its superior electronic properties and its compatibility with mature silicon-based semiconductor technology. The successful synthesis of silicene on several substrates provides a solid foundation for the use of silicene in future microelectronic devices. In this review, we discuss the growth mechanism of silicene on an Ag(111) surface, which is crucial for achieving high quality silicene. Several critical issues related to the electronic properties of silicene are also summarized, including the point defect effect, substrate effect, intercalation of alkali metal, and alloying with transition metals.     

Silicene: compelling experimental evidence for graphenelike two-dimensional silicon

Because of its unique physical properties, graphene, a 2D honeycomb arrangement of carbon atoms, has attracted tremendous attention. Silicene, the graphene equivalent for silicon, could follow this trend, opening new perspectives for applications, especially due to its compatibility with Si-based electronics. Silicene has been theoretically predicted as a buckled honeycomb arrangement of Si atoms and having an electronic dispersion resembling that of relativistic Dirac fermions. Here we provide compelling evidence, from both structural and electronic properties, for the synthesis of epitaxial silicene sheets on a silver (111) substrate, through the combination of scanning tunneling microscopy and angular-resolved photoemission spectroscopy in conjunction with calculations based on density functional theory.     

硅烯的化学功能化

硅烯是一种零能隙的狄拉克费米子材料,对其能带结构的有效调控进而打开带隙是硅烯进一步器件化的基础.而化学功能化是调控二维材料的结构和电子性质的一种有效方法.本文简要介绍了近几年在硅烯的化学功能化方面取得的进展,主要包括硅烯的氢化、氧化、氯化以及其他几种可能的化学修饰方法.     

Electronic structure of silicene

In this topical review, we discuss the electronic structure of free-standing silicene by comparing results obtained using different theoretical methods. Silicene is a single atomic layer of silicon similar to graphene. The interest in silicene is the same as for graphene, in being two-dimensional and possessing a Dirac cone. One advantage of silicene is due to its compatibility with current silicon electronics. Both empirical and first-principles techniques have been used to study the electronic properties of silicene. We will provide a brief overview of the parameter space for first-principles calculations.However, since the theory is standard, no extensive discussion will be included. Instead, we will emphasize what empirical methods can provide to such investigations and the current state of these theories. Finally, we will review the properties computed using both types of theories for free-standing silicene, with emphasis on areas where we have contributed.Comparisons to graphene is provided throughout.     

Silicene on substrates:A theoretical perspective

Silicene, as the silicon analog of graphene, is successfully fabricated by epitaxially growing it on various substrates.Like free-standing graphene, free-standing silicene possesses a honeycomb structure and Dirac-cone-shaped energy band,resulting in many fascinating properties such as high carrier mobility, quantum spin Hall effect, quantum anomalous Hall effect, and quantum valley Hall effect. The existence of the honeycomb crystal structure and the Dirac cone of silicene is crucial for observation of its intrinsic properties. In this review, we systematically discuss the substrate effects on the atomic structure and electronic properties of silicene from a theoretical point of view, especially with emphasis on the changes of the Dirac cone.     

Effect of isotope doping on phonon thermal conductivity of silicene nanoribbons: A molecular dynamics study

Silicene, a silicon analogue of graphene, has attracted increasing research attention in recent years because of its unique electrical and thermal conductivities. In this study, phonon thermal conductivity and its isotopic doping effect in silicene nanoribbons(SNRs) are investigated by using molecular dynamics simulations. The calculated thermal conductivities are approximately 32 W/mK and 35 W/mK for armchair-edged SNRs and zigzag-edged SNRs, respectively, which show anisotropic behaviors. Isotope doping induces mass disorder in the lattice, which results in increased phonon scattering, thus reducing the thermal conductivity. The phonon thermal conductivity of isotopic doped SNR is dependent on the concentration and arrangement pattern of dopants. A maximum reduction of about 15% is obtained at 50% randomly isotopic doping with ~(30)Si. In addition, ordered doping(i.e., isotope superlattice) leads to a much larger reduction in thermal conductivity than random doping for the same doping concentration. Particularly, the periodicity of the doping superlattice structure has a significant influence on the thermal conductivity of SNR. Phonon spectrum analysis is also used to qualitatively explain the mechanism of thermal conductivity change induced by isotopic doping. This study highlights the importance of isotopic doping in tuning the thermal properties of silicene, thus guiding defect engineering of the thermal properties of two-dimensional silicon materials.     

Electronic properties of silicene in BN/silicene van der Waals heterostructures

Silicene is a promising 2D Dirac material as a building block for van der Waals heterostructures(vd WHs). Here we investigate the electronic properties of hexagonal boron nitride/silicene(BN/Si) vd WHs using first-principles calculations.We calculate the energy band structures of BN/Si/BN heterostructures with different rotation angles and find that the electronic properties of silicene are retained and protected robustly by the BN layers. In BN/Si/BN/Si/BN heterostructure, we find that the band structure near the Fermi energy is sensitive to the stacking configurations of the silicene layers due to interlayer coupling. The coupling is reduced by increasing the number of BN layers between the silicene layers and becomes negligible in BN/Si/(BN)_3/Si/BN. In(BN)_n/Si superlattices, the band structure undergoes a conversion from Dirac lines to Dirac points by increasing the number of BN layers between the silicene layers. Calculations of silicene sandwiched by other 2D materials reveal that silicene sandwiched by low-carbon-doped boron nitride or HfO_2 is semiconducting.     

A review of the growth and structures of silicene on Ag(111)

Ag(111) is currently the most often used substrate for growing silicene films. Silicene forms a variety of different phases on the Ag(111) substrate. However, the structures of these phases are still not fully understood so far. In this brief review we summarize the growth condition and resulting silicene phases on Ag(111), and discuss the most plausible structural model and electronic property of individual phases. The existing debates on silicene on Ag(111) system are clarified as mush as possible.