Observation of enhanced dielectric permittivity in Bi doped BaFe12O19 ferrite

The dielectric properties of a 2.5 mol% Bi₂O₃ doped Ba-ferrite (BaFe₁₂O₁₉) have been investigated. The specimen shows a drastically enhanced (≈ 10⁵ times) permittivity (ε) through local polarization of Fe³⁺ electronic charges activated with nearby Bi³⁺ sites. The ε value also depends reasonably on thermal annealing (causes grain growth) of the samples. The specimens comprising large particle sizes (1–20 μ m) usually exhibit smaller ε values and low dielectric losses.     

Transport properties of SrCe0.95Y0.05O3−δ and its application for hydrogen separation

Transport properties of SrCe_0.95Y_0.05O_3−δ were studied by impedance spectroscopy and by measuring open-cell voltage (OCV) and gas permeation. Ionic transference numbers were determined by measuring the OCV of concentration cells and water vapor evolution of an O₂/H₂ fuel cell. We observed interfacial polarization on the basis of the I–V curves obtained by discharging a hydrogen concentration cell or an O₂/H₂ fuel cell. The observed high protonic conductivity (high proton and low oxide ion transference numbers) makes SrCe_0.95Y_0.05O_3−δ a potential material for hydrogen separation. From proton conductivity measurements, under a given hydrogen partial pressure difference of 4%/0.488%, the hydrogen permeation rate (of a dense membrane with 0.11 cm in thickness) was calculated to be ≈0.072 cm³ (STP) cm⁻² min⁻¹ at 800°C, whereas the permeation rate calculated from short-circuit current measurements was ≈0.023 cm³ (STP) cm⁻² min⁻¹ at 800°C. The difference between calculated and observed permeation rates is probably due to interfacial polarization.     

Ion-implantation-induced structural modifications in Y1Ba2Cu3O7−δ superconductor

Ion-implantation-induced structural modifications in Y₁Ba₂Cu₃O_7−δ superconductor are examined by a grazing angle X- ray diffraction technique. By employing a range of grazing angles from 0.3° to 10° it is shown that 100 KeV Ar⁺ inplantation of the superconductor leads to amorphization as well as modification of grain size and orientation at dose values lower than 10¹⁶ ions/ cm². At the dose of 5 × 10¹⁶ ions/ cm² the X-ray diffraction intensity is a factor of 6 less as compared to the original pellet, though the lines themselves are sharp. This shows coexistence of perovskite grains and amorphous matrix.     

The Hanle effect for the 3 S1/2 ↔ 3 P1/2 transition of sodium

Experimental results are reported for the Hanle effect on the 3 ²S_1/2 ↔ 3 ²P_1/2 transition of sodium at vapour densities between 10⁹ and 10¹² at/cm³.     

Linear and nonlinear critical magnetic properties and transport in Nd0.75Ba0.25MnO3 single crystal: evidence for its anomalous critical behavior near TC

The data on the resistance and magnetoresistance (MR) as well as measurements of the linear and nonlinear susceptibilities are presented for a Nd_0.75Ba_0.25MnO₃ single crystal with the Curie temperature T_C≈129 K. Although this compound remains insulating in the ferromagnetic state, its resistance has an anomaly near T_C and it reveals the colossal magnetoresistance. The data on the magnetic response are well described by the dynamic scaling theory for 3D isotropic ferromagnets in the paramagnetic critical region at τ>τ^*≈0.11, τ=(T−T_C)/T_C. Below τ^* an anomalous critical behavior is found that suggests the coexistence of two magnetic phases. This behavior is discussed in terms of a phase separation which can occur in the moderately doped manganites exhibiting an orbital ordering.     

LiNbO3和LiTaO3晶体Er3+/Yb3+掺杂水热外延层室温吸收光谱分析

本文引入与浓度和厚度有关的k_NL待定参数, 在J-O理论基础上, 对Er³⁺/Yb³⁺掺杂的LiNbO₃和LiTaO₃单晶衬底上 的多晶水热外延样品进行了基于吸收光谱的拟合计算. LiNbO₃:Ω₂=2.34× 10^-20 cm², Ω₄=0.77× 10^-20 cm², Ω₆=0.31×10^-20 cm², k_NL=4.32× 10^-2 mol·m^-2. LiTaO₃:Ω₂=1.68×10^-20 cm², Ω₄=0.84×10^-20 cm², Ω₆=0.45×10^-20 cm², k_NL=9.17×10^-3 mol· m^-2. 该方法可尝试推广到粉体或胶体等难以直接获得浓度和厚度数据的体系. 经上转换发光测试及光谱参数计分析认为Er³⁺/Yb³⁺离子的掺杂浓度比为1:1的情况下, 样品呈现绿色上转换发光光谱; 可尝试以降低基质声子能量的方法提高⁴I_13/2能级 对²H_11/2和⁴S_3/2能级的量子剪裁效率.     

Reversible H2 passivation of Si ≡ Si3 interface defects in (1 1 1)Si/SiO2

K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 1]P_b centers (^*Si ≡ Si₃ defects with unpaired sp³ hybrid [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO₂ interface. This has been enabled by the perfectly reversible H₂ passivation of P_b, which affects the defect's spin state. Sequential hydrogenation at 253–353°C and degassing treatments in high vacuum at 743–835°C allowed to vary the P_b density in the range 5 × 10¹⁰ < [P_b] (1.14 ± 0.06) × 10¹³ cm^-2. With increasing [P_b] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO₂ interfaces, dry thermally grown at ≈920°C, naturally comprise a ^*Si ≡ Si₃ defect density — passivated or not — of 1.14 × 10¹³ cm^-2.     

High critical current density YBa2Cu3O7−δ tapes prepared by the surface-oxidation epitaxy method

YBa₂Cu₃O_7−δ (YBCO) films with high critical current density (J_c) were successfully fabricated on nickel tapes buffered with epitaxial NiO. NiO was prepared on the textured nickel tape by the surface-oxidation epitaxy (SOE) method. We have reported so far a critical temperature (T_c) of 87 K and J_c=4–6×10⁴ A/cm² (77 K, 0 T) for the YBCO films on NiO/Ni tapes. To enhance the superconducting properties of the YBCO films on the SOE-grown NiO, depositions of thin oxide cap layers such as YSZ, CeO₂, and MgO on NiO were investigated. These oxide cap layers were epitaxially grown on NiO and provided the template for the epitaxial growth of YBCO films. Substantially improved data of T_c=88 K and J_c=3×10⁵ A/cm² (77 K, 0 T) and 1×10⁴ A/cm² (77 K, Hc, 4 T) were obtained for YBCO film on NiO, by using a MgO cap layer with a thickness of 50 nm. The method described in this paper is a simple way to produce long YBCO tape conductors with high-J_c values.     

Temperature dependence of the exafs spectrum in YBa2Cu3O7−δ compounds

The temperature dependence of the extended X-ray absorption fine structure (EXAFS) is studied in the high T_c superconductors, YBa₂Cu₃O_7−δ. The measurements were done at the Cu K-edge for samples of two orthorhombic phases (T_c≈90 K and ≈58 K, respectively) and a nonsuperconducting tetragonal phase. Interatomic distances and mean square relative displacements σ² for Cu-O bonds are determined by the least squares refinement. The results indicate that values of σ² increase near T_c for both the orthorhombic samples. It is concluded that this anomalous behavior related to T_c is caused by an anomalous vibration of oxygen atoms in the Ba-O layer. Changes in the Cu-O distances from 300 to 20 K are not found.     

Radioluminescence (RL) behaviour of Al2O3:C-potential for dosimetric applications

The radioluminescence (RL) of carbon doped aluminium oxide (Al₂O₃:C) TL dosimeter material (TLD-500) was investigated using a ¹³⁷Cs conversion electron source (which also emits β and γ) for simultaneous irradiation and luminescence excitation. Furthermore, RL dosimetry characteristics of this material were studied. The main RL emission occurs at 420 nm. That matches the known main TL and OSL emissions for this material as well as an emission that was investigated in earlier RL studies, excited at higher energies (4 MeV electrons) and very high pulse delivered doses (≈800 kGy·s⁻¹). Furthermore, the saturation dose for the main peak is reached at the dose level of ≈80 Gy as known from TL and earlier RL investigations. Other peaks at 700 and 790 nm and broad emission bands at photon energies higher than 3.00 eV and others between 2.00 and 2.50 eV were observed. The 700 nm emission shows growth also at higher dose levels, and saturates at an estimated dose of ≈800 Gy. The 790 nm emission reaches its maximum intensity at ≈10 Gy absorbed dose. The reported results give an outlook to the usability and the potential of Al₂O₃:C combined with RL measurements for radiation dosimetry as well as for beta source calibration, using radioluminescence.     

超薄EuF3电极修饰层对有机场效应晶体管性能的提升

采用EuF₃薄层修饰低功函数金属Ag源、漏电极,制备了CuPc有机场效应晶体管,研究了不同厚度EuF₃对器件性能的影响。结果表明,EuF₃的厚度由0 nm增至0.6 nm时,接触电阻由23.65×10⁵ Ω·cm减 至3.86×10⁵ Ω·cm,使得器件载流子迁移率由1.5×10^-3 cm²·V^-1·s^-1提高到4.65×10^-3 cm²·V^-1·s^-1。 UPS测试结果表明,薄层EuF₃在Ag与有机半导体间形成了界面偶极势垒,使源漏电极表面功函数增大,空穴注入势垒降低,Ag电极与有机半导体层界面的接触电阻减小,进而提升了空穴的注入效率。     

Continuum absorption of vibrationally excited O2 from 200–320 nm

Cross sections for absorption from excited vibrational levels of the ground X³Σ^-_g state of molecular oxygen to the repulsive 1³Π_u state are given. The potential energy curve for the 1³Π_u state of O₂ is constructed to be consistent with predissociation data for the B³Σ^-u state and with recent ab initio calculations. In the photon wavelength range of 200–320 nm the cross sections are smoothly oscillatory and in no case larger than 1 × 10^-21 cm². In the region of the Schumann-Runge bands the cross sections are of order 0.4 × 10^-21 cm².     

Photo-excitation of single crystals of La2CuO4+δ near the metal-insulator transition

Transient photoconductivity (σ_ph) experiments have been carried out in single crystals of insulating La₂CuO_4+δ near the metal-insulator transition (δ≈ 1–2%). The time evolution of the σ_ph changes dramatically with light intensity (I_L). At low I_L, σ_ph is characterized by power law time decay, t⁻, in the nanosecond time regime, and the exponent, , decreases significantly with increasing I_L. As I_L increases to 5 × 10¹⁵ photons/cm₂, σ_ph reaches 15 S/cm, and the lifetime of the conducting state is enhanced by more than two orders of magnitude: σ_ph exhibits a delayed peak centered at approximately 30 ns. followed by exponential decay with time constant of 360 ns. The data reveal a continuous distribution of localized electronic states above the (hole) mobility edge; the M-I transition is achieved when the Fermi level is shifted away from the localized states and across the mobility edge either by chemical dopiing or by photo-excitation. The time of σ_ph at high I_L implies the formation of metastable metallic droplets after photo-excitation.     

Importance of the photo-beta process for the synthesis of “p” elements in stellar conditions

In this work, we compare positon capture and photo-beta disintegration probabilities in several stellar conditions.

We show that the second process can be neglected with regard to the first one in strongly endothermic nuclear transitions, whereas photo-beta disintegration can be competitive with positon capture and even can have a greater likelihood than the latter process in weakly endothermic and exothermic transitions.

In the range of temperature we consider here (T ≈ 10⁹ °K), it appears that the lifetime ratio τ(ph)/τ(e_c⁺) against photo-beta disintegration and positon capture is the smallest for densities in the neighbourhood of 10⁶ g/cm³.

Thus, we arrive at the conclusion that the photo-beta process can play a role in the synthesis of two “p” elements at least, ₆₂¹⁴⁴Sm and ₈₀¹⁹⁶Hg, for which the ratios τ(ph)/τ(e_c⁺) are close to 10 and 20, respectively, in the most favourable stellar conditions.     

高Yb3+/Er3+掺杂的磷基有源光纤材料的光谱性质

研究了Yb³⁺/Er³⁺共掺60P₂O₅-15BaO-10Al₂O₃-5ZnO-10R₂O（R=Na,K）以P₂O₅为主体的磷基有源光纤材料的光谱性质,以及不同Yb³⁺/Er³⁺掺杂浓度对光谱性质的影响规律。当Er³⁺浓度为9.100×10¹⁹/cm³、Yb³⁺的掺杂浓度为5.407×10²⁰/cm³、Yb³⁺/Er³⁺浓度比为6：1时,玻璃样品在1 531 nm处的受激发射截面最大,为6.17×10^-21 cm²。同时,其荧光寿命为9.73 ms,荧光半高宽为53.16 nm,发射截面与半高宽的乘积为3.28×10^-32 m³,综合性能最佳。     

Hadronic production by ee collisions at the energy 990 MeV with the Orsay storage ring

Data were taken at the energy 2E = 990 MeV to search for multibody events, with the same large solid angle detector which has been used for the measurement of the , ω andφ production by e⁺e⁻ annilations. Assuming a π⁺π⁻π⁰π⁰ production by the quasi two-body process e⁺e⁻ → → ωπ⁰ we give the correspondi ng cross section σ(e⁺e⁻ → π⁺π⁻π⁰π⁰) = (1.1 ± 0.5) 10⁻³² cm². Since no events with 3 and 4 charged pions have been observed σ(e⁺e⁻ → π⁺π⁻π⁰π⁻) 1.5 × 10⁻³³ cm².     

Correlation between electrical, optical properties and Ag centers of ZnO:Ag thin films

ZnO:Ag films have been fabricated on a n-Si (1 1 1) substrate and then annealed in situ in an O₂ ambient, using Ag₂O as a silver dopant by pulsed laser deposition. Hall measurements reveal that the films prepared at 400 and 450 °C show p-type behavior with a hole concentration of 6.3×10¹⁶–1.2×10¹⁷ cm^–3 and a mobility of 2.48–3.30 cm²/V s. By combining Hall measurements, electron paramagnetic resonance (EPR) signals, and photoluminescence (PL) spectra, a correlation is observed between the free hole carriers, the Ag²⁺ centers, and the neutral acceptor bound excitons. Additionally, the p-ZnO:Ag/n-Si heterojunction shows a diode-like I–V characteristic.     

Characterization of III–V compounds by quasi-elastic electronic scattering of light

Quasi-elastic light scattering from individual electron single-particle excitations is observed experimentally and studied theoretically in n-GaAs and n-InP samples with nonparabolic dispersion of energy bands for a wide range of free-electron concentrations varying from ≈10⁸ to ≈10¹⁹ cm^-3. The results indicate that the scattering mechanisms associated with charge-, spin- and momentum-density fluctuations are represented by different light scattering line shapes and occur in different concentration ranges.     

Spectroscopy, laser operation at 1.3 μm and self-frequency doubling in GdAl3(BO3)4: Nd

We report for the first time the spectroscopy and the laser operation of GdAl₃(BO₃)₄: Nd³⁺ (NGAB) near 1338 nm corresponding to the ⁴F_3/2→⁴I_13/2 channel. Their features have been found favorable for self-frequency doubling in order to generate a red radiation at 669 nm and more generally for self-frequency conversions. The emission cross-section in σ-polarization was estimated to be 5.5×10⁻²⁰ cm². We demonstrated self-frequency doubling despite of non-optimal experimental conditions.