Energy loss dependent transversal etching rates of heavy ion tracks in plastic

By the method of electrolytical etching track etching rates V_t and corresponding transversal track etching rates V_trans of single heavy ion tracks in thin Makrofol KG foils have been measured at ion energies from 10–480 MeV/u. Makrofol KG foils of 8 μm thickness were irradiated perpendicular to the surface with ⁷⁹Au and ⁵⁴Xe ions at specific energies with energy loss values of REL=(10–90) ^*10³ MeVcm²/g at GSI Darmstadt, Germany, and Lawrence Berkeley Lab., Cal., USA. Using the electrolytical etching method by measuring the resistance of the foil during the etching process (etching conditions: 6n NaOH, room temperature and controlled 50° C) the breakthrough time and track etching rates V_t, V_trans and V_m (bulk etching rate) were analysed. Response curves (V_t/V_m)-1 as a function of Restricted Energy Loss (REL), the maximum extension of the ion induced damage perpendicular to the ion path and the dimension of the ion track core depending on the deposited energy can be estimated.     

Study of current drain during electrochemical etching of polycarbonate detectors

Polycarbonate (PC) detector is one of the common detectors for neutron and radon gas detection. Using this detector it is possible to measure the dose in mSv, by counting tracks/cm² on an etched surface. In this paper, a special procedure has been suggested to determine the dose based on current drain during the etching process. In these experiments the effects of voltage, frequency, effective etched area, PC detector's thickness, etched area (one side or two sides), etching solution temperature and dose absorbed by the PC foil have been studied.The results obtained show the current drain variation for a voltage of 200–1600 V, a frequency of 2–10 kHz, effective area with a diameter of 2–12 cm, PC thickness of 125–250–375– and a temperature of etching solution of 25–.Lexan PC foils were exposed to doses of of neutrons. The unexposed foils were considered as the background (BG) foils. Most of the experiments were performed at a voltage of 800 V, a frequency of 2 and 8 kHz, foil thickness of , diameter of effective etched area of foils of 2, 6 and 12 cm, temperatures of 25 and and the etching process from 0 up to overload stage. Overload stage occurs when the foil becomes so thin due to growth of the tracks that it leads to sparking between phase and null that makes a hole in the foil.Current drain curves versus the function of the etching time are absolutely different for various doses from zero (BG) to 10 rad (BG up to ). This is true especially for the time interval from 3 h of etching up to overload stage. In this way, it is possible to obtain a calibration of PC detector net current drain based on its absorbed dose.In this experiment, the number and diameter of tracks and their relation with drain current and PC foil residual thickness at overload stage have been studied.The same experiment has been performed for various concentrations of radon gas (Bq/m3) as well.     

The statistical process of pore growth in multi pore foils

Using the electrolytical etching method the breakthrough-times (i.e. the time when the two etched cones from both sides of the detector contact) and the resulting track etching rates v_t of heavy ion tracks in 8 μm polycarbonate Makrofol KG have been measured. The samples were irradiated at the GSI, Darmstadt (Germany) with gold ions and different fluences at a specific energy of 11.6 MeV/u. All foils were etched in 6 n NaOH at room temperature. Fluctuations of breakthrough-times of single pore foils were analysed. Also the breakthrough-time of multi-pore-foils were measured. The dependence of the mean breakthrough-time on the ion fluence is dicussed. This dependence will be explained by the fluctuations of the breakthrough-time of the pores.     

MBE grown type-II MWIR and LWIR superlattice photodiodes

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption 2–5 μm and 8–12 μm bands. Recent LWIR devices have produced detectivities as high as 8 × 10¹⁰ Jones with a differential resistance–area product greater than 6 Ohm cm² at 80 K with a long wavelength cutoff of approximately 12 μm. The measured internal quantum efficiency of these front-side illuminated devices is close to 30% in the 10–11 μm range. MWIR devices have produced detectivities as high as 8 × 10¹³ Jones with a differential resistance–area product greater than 3 × 10⁷ Ohm cm² at 80 K with a long wavelength cutoff of approximately 3.7 μm. The measured internal quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2–3 μm range at low temperature and increases to over 60% near room temperature.     

Chemically deposited copper oxide thin films: structural, optical and electrical characteristics

Thin films of copper oxide with thickness ranging from 0.05–0.45 μm were deposited on microscope glass slides by successively dipping them for 20 s each in a solution of 1 M NaOH and then in a solution of copper complex. Temperature of the NaOH solution was varied from 50–90°C, while that of the copper solution was maintained at room temperature. X-ray diffraction patterns showed that the films, as prepared, are of cuprite structure with composition Cu₂O. Annealing the films in air at 350°C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.1 eV (direct) to 1.75 eV (direct). The films show p-type conductivity, 5×10⁻⁴ Ω⁻¹ cm⁻¹ for a film of thickness 0.15 μm. Electrical conductivity of this film increases by a factor of 3 when illuminated with 1 kW m⁻² tungsten halogen radiation. Annealing in a nitrogen atmosphere at temperatures up to 400°C does not change the composition of the films. However, the conductivity in the dark as well as the photoconductivity of the film increases by an order of magnitude. The electrical conductivity of the CuO thin films produced by air annealing at 400°C, is high, 7×10⁻³ Ω⁻¹ cm⁻¹. These films are also photoconductive.     

InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5–14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3 × 10⁸ cm Hz^1/2/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before.     

Observation of diffusion through ion irradiated Makrofol KG

The features of the latent track in polycarbonate can be analysed by measuring the diffusion constant under ultra high vacuum conditions. Stacks of 30 μm Makrofol KG foils were irradiated with uranium ions of 11.4 MeV/u at the GSI Darmstadt, Germany. We used different fluences from 3·10¹⁰ to 5·10¹¹ ions/cm². The diffusion constant was determined by the time-lag-method [1]. A quadrupole mass filter was used to observe the diffusion of the gas. We measured the diffusion of argon through different foils of each stack at room temperature. In all cases also unirradiated foils were measured. The dependence of the permeability and the diffusion constant on the ion fluence and the energy loss of the ions will be given and indications on the size of latent ion tracks concerning gas diffusion will be discussed.     

Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol–gel process

Ti substituted BiFe_1−xTi_xO_3+δ films have been prepared on indium–tin oxide (ITO)/glass substrates by the sol–gel process. The films with x=0.00–0.20 were prepared at an annealing temperature of 600 °C. X-ray diffraction patterns indicate that all films adopt R3m structure and the films with x=0 and 0.10 show pure perovskite phase. Cross-section scanning shows the thickness of the films is about 300 nm. Through 0.05 Ti substitution, the 2P_r increases to 8.30 μC/cm² from 2.12 μC/cm² of the un-substituted BiFeO₃ film and show enhanced ferroelectricity at room temperature. The 2P_r values are 2.63 and 0.44 μC/cm² for the films with x=0.01 and 0.2, respectively. Moreover, the films with x=0.05 and 0.10 show enhanced dielectric property since the permittivity increases near 150 at the same measuring frequency. Through the substitution of Ti, the leakage conduction is reduced for the films with x=0.05–0.20.     

Neutron fluences and dose equivalents measured with passive detectors on LDEF

Neutron fluences were measured on LDEF in the low energy (< 1 MeV) and high energy (> 1 MeV) ranges. The low energy detectors used the ⁶Li(n,)T reaction with Gd foil absorbers to separate thermal (< 0.2 eV) and resonance (0.2 eV−1 MeV) neutron response. High energy detectors contained sets of fission foils (¹⁸¹Ta, ²⁰⁹Bi, ²³²Th, ²³⁸U) with different neutron energy thresholds. The measured neutron fluences together with predicted spectral shapes were used to estimate neutron dose equivalents. The detectors were located in the A0015 and P0006 experiments at the west and Earth sides of LDEF under shielding varying from 1 to 19 g/cm².

Dose equivalent rates varied from 0.8 to 3.3 μSv/d for the low energy neutrons and from 160 to 390 μSv/d for the high energy neutrons. This compares with TLD measured absorbed dose rates in the range of 1000–3000 μGy/d near these locations and demonstrates that high energy neutrons contribute a significant fraction of the total dose equivalent in LEO.

Comparisons between measurements and calculations were made for high energy neutrons based on fission fragment tracks generated by fission foils at different shielding depths. A simple 1-D slab geometry was used in the calculations. Agreement between measurements and calculations depended on both shielding depth and threshold energy of the fission foils. Differences increased as both shielding and thereshold energy increased. The modeled proton/neutron spectra appeared deficient at high energies. A 3-D model of the experiments is needed to help resolve the differences.     

Observation of enhanced dielectric permittivity in Bi doped BaFe12O19 ferrite

The dielectric properties of a 2.5 mol% Bi₂O₃ doped Ba-ferrite (BaFe₁₂O₁₉) have been investigated. The specimen shows a drastically enhanced (≈ 10⁵ times) permittivity (ε) through local polarization of Fe³⁺ electronic charges activated with nearby Bi³⁺ sites. The ε value also depends reasonably on thermal annealing (causes grain growth) of the samples. The specimens comprising large particle sizes (1–20 μ m) usually exhibit smaller ε values and low dielectric losses.     

On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films

Sol–gel derived Fe₂O₃ films containing about 10 wt% of Er₂O₃ were deposited on porous silicon by dipping or by a spin-on technique followed by thermal processing at 1073 K for 15 min. The samples were characterized by means of PL, SEM and X-ray diffraction analyses. They exhibit strong room-temperature luminescence at 1.5 μm related to erbium in the sol–gel derived host. The luminescence intensity increases by a factor of 1000 when the samples are cooled from 300 to 4.2 K. After complete removal of the erbium-doped film by etching and partial etching the porous silicon, the erbium-related luminescence disappears. Following this, luminescence at 1.5 μm originating from optically active dislocations (“D-lines”) in porous silicon was detected. The influence of the conditions of synthesis on luminescence at 1.5 μm is discussed.     

Optical properties of Ag–Al2O3 nano-array composite structure

Ag/Al₂O₃ nano-array composite structures were obtained by alternating current (AC) electrodeposition of Ag into the pores of anodic alumina membrane (AAM). The ordered wire-grid structure of Ag nanowires formed along a preferential direction, typically 20 nm in diameter, was fabricated. XRD revealed that Ag₂O is also preserved in the pores of AAM. Optical properties of Ag/Al₂O₃ prepared at different annealing temperatures were measured by using spectrometer. Transmission spectra indicate that the transmittance of Ag/Al₂O₃ increases obviously with the increasing of annealing temperature. Polarization spectra indicate that Ag/Al₂O₃ has good polarization in the range of 900–2000 nm, and the extinction ratio increases with the increasing of the annealing temperature or incident angle.     

Magnetic properties of Fe-based glass-coated microwires

Axial hysteresis loops of glass-coated amorphous Fe₇₀B₁₅Si₁₀C₅ microwire have been measured as a function of both the diameter of metallic nucleus (from 3.7–14.9 μm) and the thickness of the coating (4.0–9.6 μm). They exhibit low-field rectangular hysteresis loops with a single and large Barkhausen jump even for samples as short as 5 mm long. Coercivity remarkably increases (roughly from 1 to 10 Oe) and remanence decreases (from 1 to 0.45 T), respectively, as the ratio of metallic nucleus radius to the total radius of the wire decreases from 0.63 to 0.16. The strength of the internal stresses induced during the fabrication depends on this ratio, and the easy axes of the corresponding magnetoelastic anisotropies determine the actual value of coercivity and remanence for these microwires.     

XUV radiation transfer through high-Z metal foil in a laser-produced plasma

Aluminum and gold foils have been irradiated with 1.05-μm, 100-psec laser pulses at an intensity of 3 × 10¹⁴ W/cm². A spatially resolved spectrum of XUV radiation from a rear-side plasma has been observed in the wavelength range from 10 to 100 Å. The spectral intensity for the Al foil decays exponentially with foil thickness and goes to zero at 3 μm. The intensity for the Au foil also decays exponentially up to 1 μm but remains almost constant from 1 to 6 μm. This result for the Au foil indicates that radiation heat conduction plays an important role in energy transport through high-Z plasmas.     

Temperature dependence of luminescence time-resolved spectra from quartz

Pulsed optical stimulation of luminescence has been used to study the thermal dependence of luminescence lifetimes in quartz over the temperature range 20–200°C. Time-resolved spectra for lifetime analysis were recorded from samples of quartz over a dynamic range of 64 μs following stimulation of luminescence by pulsed 525 nm green light emitting diodes (LEDs) using an 11 μs pulse and 12% duty cycle. It has been demonstrated that an increase in measurement temperature generally leads to a decrease in lifetimes from about 30 μs at 20°C to about 7 μs at 200°C. The form of the decrease is influenced by the initial optical or thermal pre-treatment of samples.     

640 × 512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays

A 9 μm cutoff 640 × 512 pixel hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated with excellent imagery. A noise equivalent differential temperature (NEDT) of 10.6 mK is expected at a 65 K operating temperature with f/2 optics at a 300 K background. This focal plane array has shown background limited performance at a 72 K operating temperature with the same optics and background conditions. In this paper, we discuss the development of this very sensitive long-wavelength infrared camera based on a GaAs/AlGaAs QWIP focal plane array and its performance in quantum efficiency, NEDT, uniformity, and operability. In the second section of this paper, we discuss the first demonstration of a monolithic spatially separated four-band 640 × 512 pixel QWIP focal plane array and its performance. The four spectral bands cover 4–5.5, 8.5–10, 10–12, and 13.5–15 μm spectral regions with 640 × 128 pixels in each band. In the last section, we discuss the array performance of a 640 × 512 pixel broad-band (10–16 μm full-width at half-maximum) QWIP focal plane.     

Cosmic history of the Bragin pallasite: evidence from the fission-track analysis

Chronology is rather a weak point in the investigation of pallasites, the stony-iron meteorites. No chronological data are known for the Bragin pallasite. Our attempt to reconstruct its cosmic history was based on the interpretation of fission-track analysis data. To apply this method only uranium-rich phosphates can be used. Extremely rare grains of stanfieldite were extracted from the silicate sawing residue and from the pallasite sample directly.

The researches pursued by us made it possible to find two populations of fossil tracks in stanfieldite grains. The tracks of these populations strongly differed both in size, shape and character of distribution. The first population, consisting of short (L2–6 μm instead of L8–12 μm for induced fission tracks), round-shaped tracks irregularly distributed, as we suppose, suffered an intense heating process, which caused a significant amount of partial annealing. The second population, consisting of longer (L8–12 μm), rhombic-shaped tracks homogeneously distributed, occurred after this thermal event. Only the second population track density was used for the fission-track age calculation.

After correction of the fossil track density, consisting of the second population tracks, for other possible track sources, the revealed tracks were unequivocally identified as those due to the spontaneous fission of ²⁴⁴Pu and ²³⁸U. The largest part of them was attributed to the spontaneous fission of ²⁴⁴Pu; ρ_Pu/ρ_U≈3. The model fission-track age of the studied pallasite turned out to be 4.20 Gyr. This value fix the time of the last shock/thermal event in the cosmic history of the Bragin pallasite, which had caused the partial annealing of tracks presented to that time and “fission-track clock” reset.     

Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors

Using homo-junction structure and relative thin linear graded In_xGa_1−xAs as the buffer layer, extended wavelength InGaAs PIN photodetectors with cut-off wavelength of 2.2 and 2.5 μm at room temperature have been grown by using GSMBE, and their performance over a wide temperature range have been extensively investigated. For those 2.2 or 2.5 μm detectors with 100 μm diameter, the typical dark current (V_R = 10 mV) and R₀A are 57 nA/10.3 Ω cm² or 67 nA/12.7 Ω cm² at 290 K, and 84 pA/4.70 kΩ cm² or 161 pA/3.12 kΩ cm² at 210 K respectively. The thermal activation energies of the dark current are 0.447 eV or 0.404 eV for 2.2 or 2.5 μm detectors respectively.     

Near-infrared sources in the 1–1.3 μm region by efficient stimulated Raman emission in glass fibers

Low-loss glass fiber waveguides are found to be excellent media for Raman lasers and amplifiers in the near-infrared region of the spectrum. Multiwavelength emission in the 1–1.3 μm range is readily obtained by efficient stimulated Raman scattering in single-mode silica fibers. With a 1.064 μm pulsed pump of 250 W in a 175-m, 6-μm diameter single-mode silica fiber we observed four orders of Stokes radiation at 1.12 μm, 1.18 μm, 1.23 μm and 1.3 μm, respectively. Our results imply that pulsed tunable stimulated Raman emission in this wavelength region is possible using kW tunable infrared dye lasers near 1 μm as pumps. These sources are useful for studying the dispersion of glass fibers as well as for other spectroscopic applications.