Pulsed inductive discharge CO2 laser

A pulsed inductive discharge CO₂ laser with a wavelength of 10.6 μm has been created for the first time. The excitation system of a cylindrical pulsed inductive discharge (pulsed inductively coupled plasma) in the gas mixture of CO₂:N₂:He was developed. The temporal and energy parameters of the laser radiation were investigated. The maximum inductive discharge CO₂ laser radiation energy of 104 mJ was achieved. An average power of 3.2 W was obtained at laser generation energy of 65 mJ and pulse repetition rate of 50 Hz. In the cross-section, the laser radiation had the ring shape with an external diameter of 34 mm and thickness of 4-5 mm. The measured divergence of laser radiation was 12 mrad.     

Ablation mechanism study on metallic materials with a 10 ps laser under high fluence

Single shot ablation of metallic materials of aluminium, titanium alloy (Ti6Al4V) and gold has been studied with 10 picoseconds (ps) laser pulses experimentally and theoretically. The ablation rate variation at high fluence was explained by a simplified predictive model based on critical-point phase separation (CPPS) theory. A comparison between experimental and numerical results inferred that CPPS may well be the dominant ablation mechanism for high fluence laser ablation at 10 ps laser duration.     

Backside etching of fused silica with Nd:YAG laser

The laser-induced backside etching of fused silica with gallium as highly absorbing backside absorber using pulsed infrared Nd:YAG laser radiation is demonstrated for the first time. The influence of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography was studied. The comparable high threshold fluences of about 3 and 7 J/cm² for 18 and 73 ns pulses, respectively, are caused by the high reflectivity of the fused silica-gallium interface and the high thermal conductivity of gallium. For the 18 and 73 ns long pulses the etch rate rises almost linearly with the laser fluence and reaches a value of 350 and 300 nm/pulse at a laser fluence of about 12 and 28 J/cm², respectively. Incubation processes are almost absent because etching is already observed with the first laser pulse at all etch conditions and the etch rate is constant up to 30 pulses.The etched grooves are Gaussian-curved and show well-defined edges and a smooth bottom. The roughness measured by interference microscopy was 1.5 nm rms at an etch depth of 0.6 μm. The laser-induced backside etching with gallium is a promising approach for the industrial application of the backside etching technique with IR Nd:YAG laser.     

Characterization of ultra-fast deposited polycrystalline graphite by a CO2 laser-assisted combustion-flame method

High deposition rate, 750 μm/min, crystalline graphite was deposited on WC substrates by a CO₂ laser-assisted combustion-flame method at laser powers between 300 and 800 W. The structures, which were identified as pillars, were characterized by various methods. The pillars were cylindrical in shape and grew to a size of approximately 3 mm in length and in a few minutes. The laser power did not affect the overall length of the pillar, but caused changes in the physical shape. X-ray and electron diffraction results revealed the pillars to be crystalline graphite regardless of the laser power. Investigation of the pillars by scanning electron microscopy showed two distinct microstructural areas: an inner core of dense material surrounded by an outer shell of lamellar-like material. The core/shell microstructure was unaffected by the level of CO₂ laser power.     

Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing

Si quantum dots (QDs) embedded in SiO₂ can be normally prepared by thermal annealing of SiO_x (x < 2) thin film at 1100 °C in an inert gas atmosphere. In this work, the SiO_x thin film was firstly subjected to a rapid irradiation of CO₂ laser in a dot by dot scanning mode, a process termed as pre-annealing, and then thermally annealed at 1100 °C for 1 h as usual. The photoluminescence (PL) intensity of Si QD was found to be enhanced after such pre-annealing treatment. This PL enhancement is not due to the additional thermal budget offered by laser for phase separation, but attributed to the production of extra nucleation sites for Si dots within SiO_x by laser irradiation, which facilitates the formation of extra Si QDs during the subsequent thermal annealing.     

Femtosecond laser micromilling of Si wafers

Femtosecond laser micromilling of silicon is investigated using a regeneratively amplified 775 nm Ti:Sapphire laser with a pulse duration of 150 fs operating at 1 kHz repetition rate. The morphological observation and topological analysis of craters fabricated by single-shot laser irradiation indicated that the material removal is thermal in nature and there are two distinct ablation regimes of low fluence and higher fluence with logarithmical relations between the ablation depth and the laser fluence. Crater patterns were categorized into four characteristic groups and their formation mechanisms were investigated. Femtosecond laser micromilling of pockets in silicon was performed. The effect of process parameters such as pulse energy, translation speed, and the number of passes on the material removal rate and the formation of cone-shaped microstructures were investigated. The results indicate that the microstructuring mechanism has a strong dependence on the polarization, the number of passes and laser fluence. The optimal laser fluence range for Si micromilling was found to be 2-8 J/cm² and the milling efficiency attains its maximum between 10 and 20 J/cm².     

Thermal relaxation behavior of residual stress in laser hardened 17-4PH steel after shot peening treatment

In order to investigate the residual stress relaxations of shot peened layer, isothermal annealing treatments were carried out on tempered and laser hardened 17-4PH steel after shot peening with different temperatures from 300 °C to 600 °C. The results showed that the residual stresses were relaxed in the whole deformation layer especially under higher temperature. The maximum rates of stress relaxation took place at the initial stage of annealing process in all conditions. The relaxation process during isothermal annealing could be described by Zener-Wert-Avrami function. The thermal stability of residual stress in tempered 17-4PH was higher than that in laser hardened 17-4PH as well as that in α-iron, which was due to the pinning effects of ?-Cu precipitates on the dislocation movement. As massive ?-Cu precipitates formed in the temperature about 480 °C, the activation enthalpies for stress relaxation in laser hardened 17-4PH were the same as that in tempered 17-4PH in the conditions of isothermal annealing temperatures of 500 °C and 600 °C.     

Influence of ordering change on the optical and thermal properties of inflation polyethylene films

Changes of thermal diffusivity inside femtosecond laser-structured volumes as small as few percent were reliably determined (with standard deviation less than 1%) with miniaturized sensors. An increase of thermal diffusivity of a crystalline high-density polyethylene (HDPE) inflation films by 10-20% from the measured (1.16 ± 0.01) × 10⁻⁷ m² s⁻¹ value in regions not structured by femtosecond laser pulses is considerably larger than that of non-crystalline polymers, 0-3%. The origin of the change of thermal diffusivity are interplay between the laser induced disordering, voids’ formation, compaction, and changes in molecular orientation. It is shown that laser structuring can be used to modify thermal and optical properties. The birefringence and infrared spectroscopy with thermal imaging of CH₂ vibrations are confirming inter-relation between structural, optical, and thermal properties of the laser-structured crystalline HDPE inflation films. Birefringence modulation as high as Δn ∼ ± 1 × 10⁻³ is achieved with grating structures.     

Effects of laser operating parameters on metals micromachining with ultrafast lasers

180 femtoseconds (1 kHz) and 10 picoseconds (1-50 kHz) ultrafast laser micro-structuring of the metals Ti alloy, Al and Cu have been studied for the purpose of industrial application. The effects of some key laser operating parameters were investigated. The evolution of surface morphology revealed that laser pulses overlap in a range around the spatial FWHM can help to achieve optimal residual surface roughness. While observed ablation rate (unit: μm³ per pulse) changed dramatically with repetition rate due to the combined effects of plasma absorption, residual thermal energy and phase transition, higher throughput can be achieved with higher repetition rate. This study also indicated that residual surface roughness is almost independent of repetition rate at 10 ps temporal pulse length. The ablation depth is approximately proportional to the number of overscan; however, machining accuracy deteriorates, especially for femtosecond laser processing and metals with low thermal conductivity and short electron-phonon coupling time.     

Laser backwriting process on glass via ablation of metal targets

Ablation of metal targets onto pyrex glass substrates, using a Q-switched Nd:YAG laser working at 355 nm, was used to study the potential of a laser backwriting process for the fabrication of optical waveguides via an index of refraction change. Metal foils of stainless steel, aluminum, copper, brass and gold have been used as blanks and irradiated by focusing the laser beam through a cylindrical lens under continuous movement in a direction perpendicular to the irradiation. An horizontal setup was found suitable to improve the effect of the plume in the sample. Results were obtained for two different configurations. Transversal profiles were analysed using a contact profilometer, comparing results obtained for the different configurations, traverse speeds and metal targets used. Two ablation regimes were identified, which are related to a critical laser fluence value of 2.7 J/cm². Surface micrographs obtained by scanning electron microscopy are discussed, together with the characteristics of the structures attained, taking into account the optical and thermal properties of the ablated metal blanks.     

Fiber laser annealing of nanocrystalline PZT thick film prepared by aerosol deposition

Nanocrystalline PZT thick films (1 mm square and over 10 μm thick) directly deposited onto stainless-steel substrates (PZT/SUS) by aerosol deposition (AD) technique and then annealed using focused laser beam with a fiber laser to suppress thermal damage to the back sides of the PZT/SUS and substrate near the film edge and to retain the dielectric and/or ferroelectric properties of the PZT/SUS. Compared with CO₂ laser annealing, fiber laser annealing suppressed thermal damage to the substrate. Compared with PZT/SUS annealed at 600 °C using an electric furnace, PZT/SUS annealed at 600 °C using a fiber laser showed superior properties, namely, dielectric constant ? > 1200 at a frequency of 100 Hz, remanent polarization P_r > 30 μC/cm², and coercive field strength E_c < 50 kV/cm at a frequency of 10 Hz. Furthermore, the grain growth for the PZT/SUS formed by AD technique and annealed by fiber laser irradiation was occurred within the laser spot size.     

Microstructuring of fused silica by laser-induced backside wet etching using picosecond laser pulses

The laser-induced backside wet etching (LIBWE) is an advanced laser processing method used for structuring transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated for various materials, e.g. oxides (fused silica, sapphire) or fluorides (CaF₂, MgF₂), and applied for the fabrication of microstructures. In the present study, LIBWE of fused silica with mode-locked picosecond (t_p = 10 ps) lasers at UV wavelengths (λ₁ = 355 nm and λ₂ = 266 nm) using a (pyrene) toluene solution was demonstrated for the first time. The influence of the experimental parameters, such as laser fluence, pulse number, and absorbing liquid, on the etch rate and the resulting surface morphology were investigated. The etch rate grew linearly with the laser fluence in the low and in the high fluence range with different slopes. Incubation at low pulse numbers as well as a nearly constant etch rate after a specific pulse number for example were observed. Additionally, the etch rate depended on the absorbing liquid used; whereas the higher absorption of the admixture of pyrene in the used toluene enhances the etch rate and decreases the threshold fluence. With a λ₁ = 266 nm laser set-up, an exceptionally smooth surface in the etch pits was achieved. For both wavelengths (λ₁ = 266 nm and λ₂ = 355 nm), LIPSS (laser-induced periodic surface structures) formation was observed, especially at laser fluences near the thresholds of 170 and 120 mJ/cm², respectively.     

High-beam-quality, 5.1 J, 108 Hz diode-pumped Nd:YAG rod oscillator-amplifier laser system

A high efficiency, high beam quality diode-pumped Nd:YAG master oscillator power-amplifier (MOPA) laser with six amplifier stages is demonstrated. The oscillator with two-rod birefringence compensation was designed as a thermally determined near hemispherical resonator, which presents a pulse energy of 223 mJ with a beam quality value of M² = 1.29 at a repetition rate of 108 Hz. The MOPA system delivers a pulse energy of 5.1 J with a pulse width of 230 μs, a M² factor of 3.6 and an optical-to-optical efficiency of 38.5%. To the best of our knowledge, this is the highest pulse energy for a diode-pumped Nd:YAG rod laser operation with a high beam quality and a pulse width of hundreds of microseconds at a repetition rate of over 100 Hz.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd:YVO₄ laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.     

Diode-pumped, chirped-pulse Yb:S-FAP regenerative amplifier for laser-Compton X-ray generation

We present a diode-pumped, chirped-pulse Yb:S-FAP regenerative amplifier. This regenerative amplifier was developed as a first amplifier in an all-solid-state Yb:S-FAP laser system for laser-Compton X-ray generation. The amplifier delivers pulse energies above 24 mJ at a repetition rate of 50 Hz. Pulse compression reduces pulse widths to approximately 2.0 ps.     

Surface and transport studies on La0.7Ba0.3MnO3:SnO2 bilayer

We report on study of morphology, optical contrast and transport characteristics of La_0.7Ba_0.3MnO₃ (LBMO) manganite thin films bilayered with SnO₂ on Si (0 0 1) substrate, synthesized using pulsed laser deposition system. X-ray diffraction study reveals that both LBMO and SnO₂ show polycrystalline growth over the substrate. Atomic force microscopy shows interesting pyramidal structures of LBMO of size ∼2 μm × 1 μm × 0.1 μm. On the other hand, SnO₂ grows in the form of close packed cylindrical clusters of ∼200 nm radius. Near-field optical microscopy (NSOM) study using 532 nm laser reveal that optical NSOM output intensity in LBMO is four times less than SnO₂ signal. Transport characterizations show that this bilayer configuration exhibit non-linear current-voltage characteristics from 300 upto 50 K. The nature becomes linear below this temperature. The results project the system as a promising candidate in non-conventional device category in the area of spintronics.     

Long-period fiber-gratings produced by exposure with a low-pressure mercury lamp and their sensing characteristics

A new production method of long-period fiber-gratings using neither a laser nor a fine-positioning system was proposed. A low-pressure mercury lamp emitting 254 nm ultraviolet light was used as a light source. Hydrogen-loaded Ge-B co-doped fiber was exposed to the emission of the lamp through an amplitude mask. A coupling loss up to 23 dB was obtained for a grating period of 212 μm. The maximum coupling loss for a grating period of 460 μm was 18 dB. The growth rate of the refractive index change by mercury-lamp exposure was 1.3 × 10⁻⁴/h. The temperature and strain characteristics were measured and compared with those fabricated by excimer-laser exposure. The temperature and strain sensitivities of long-period gratings with a period of 212 μm were higher than those of 460 μm. The temperature and strain sensitivities of those by mercury-lamp exposure were almost equal to those by excimer-laser exposure of the same fiber. The sensitivities of those by excimer-laser exposure of non-loaded fiber were higher than those of hydrogen-loaded fiber by mercury-lamp or excimer-laser exposures except for the temperature sensitivity of a grating period of 460 μm.     

Effect of laser shot peening on precipitation hardened aluminum alloy 6061-T6 using low energy laser

Mechanical properties of engineering material can be improved by introducing compressive residual stress on the material surface and refinement of their microstructure. Variety of mechanical process such as shot peening, water jet peening, ultrasonic peening, laser shot peening were developed in the last decades on this contrast. Among these, lasers shot peening emerged as a novel industrial treatment to improve the crack resistance of turbine blades and the stress corrosion cracking (SCC) of austenic stainless steel in power plants. In this study we successfully performed laser shot peening on precipitation hardened aluminum alloy 6061-T6 with low energy (300 mJ, 1064 nm) Nd:YAG laser using different pulse densities of 22 pulses/mm² and 32 pulses/mm². Residual stress evaluation based on X-ray diffraction sin² ψ method indicates a maximum of 190% percentage increase on surface compressive stress. Depth profile of micro-hardness shows the impact of laser generated shock wave up to 1.2 mm from the surface. Apart from that, the crystalline size and micro-strain on the laser shot peened surfaces have been investigated and compared with the unpeened surface using X-ray diffraction in conjunction with line broadening analysis through the Williamson-Hall plot.     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.