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1.
We report on the observation of room-temperature ferromagnetism in epitaxial (Zn,Mn)O films grown by a pulsed-laser deposition technique using high-density targets. The X-ray, microscopic, spectroscopic and magnetic properties of target material containing 6 at.% of Mn and films were compared. The target shows the presence of large clusters exhibiting paramagnetic behavior. However, ferromagnetic properties were observed in (Zn,Mn)O films grown at a substrate temperature of 500 °C and with an oxygen partial pressure of 1 mTorr. Although, crystalline quality of the film improves with increasing substrate temperature, the ferromagnetism becomes weaker.  相似文献   

2.
We have studied the magnetic properties of Zn0.96M0.04O (M=Mn, Fe, Co) compounds prepared using several routes. The low temperature ceramic synthesis gave multiphasic samples and show ferromagnetic behavior. Single phases can be obtained by heating at higher temperatures (∼900–1100 °C). The use of very low oxygen pressure also favours the preparation of single-phases. We were also successful in preparing single-phase samples at very low temperature (∼400 °C) by using a sol-gel method. All of the samples without noticeable secondary phases in the X-ray patterns behave as conventional paramagnets. This is true even for the samples with very low grain size. Samples exhibiting secondary phases reveal spontaneous magnetization even at room temperature in some cases. Our results strongly support that ferromagnetism at room temperature is always due to the presence of secondary phases and not to the doping of ZnO.  相似文献   

3.
We present results of a Monte Carlo study over the ferromagnetism of Co-doped ZnO. The magnetic interaction has the form of the donor impurity band exchange model, where the Co magnetic moments are exchange coupled to band electrons. These are assumed to occupy large hydrogenic orbitals and originate from shallow intrinsic ZnO defects. A number of parameters of this model remain uncertain and here we investigate the dependence of the Curie temperature on the strength of the magnetic coupling. We find an unusual concave upward shape in the magnetization curves consistent with other Monte Carlo studies for dilute systems and we predict high temperature ferromagnetism for sufficiently strong coupling.  相似文献   

4.
We present the room-temperature ferromagnetism in the (Ga,Mn)N films grown on n-type GaN templates by plasma-enhanced molecular beam epitaxy for semiconductor spintronic device applications. Despite of the possible interface effects between the (Ga,Mn)N layers and n-type GaN templates, the (Ga,Mn)N films were found to exhibit the ferromagnetic ordering above room temperature. The magnetic force microscopy identified the magnetic domains with the different magnetic orientations at room temperature, indicating the existence of the ferromagnetic long-range ordering. In Raman spectra, an additional peak at 578 cm−1 was observed, which is attributed to the local vibration of substitutional Mn in the (Ga,Mn)N lattice. Therefore, it is believed that the ferromagnetic ordering in (Ga,Mn)N is due to the carrier-mediated Ruderman-Kittle-Kasuya-Yosida interaction.  相似文献   

5.
We investigate using density functional theory (DFT) the electronic structure of (∼3%) Co-doped ZnO in the presence of native n-type donor defects such as VO and ZnI. In particular, we apply a pseudopotential-based self-interaction correction (pseudo-SIC) scheme as an improvement to the local spin-density approximation (LSDA). This overcomes major short comings of the LSDA in describing Co-doped ZnO. Donor+dopant pair complexes such as Co–VO and Co–ZnI are studied as relevant magnetic centres for long-range magnetic interactions at low-dopant concentrations. We find that complex formation is energetically favourable but the inter-complex magnetic coupling is too weak to account for room temperature ferromagnetism in ZnO:Co  相似文献   

6.
We present a systematic study of the structure, magnetization, resistivity, and Hall effect properties of pulsed laser deposited Fe- and Cu-codoped In2O3 and indium-tin-oxide (ITO) thin films. Both the films show a clear ferromagnetism and anomalous Hall effect at 300 K. The saturated magnetic moments are almost the same for the two samples, but their remanent moments Mr and coercive fields HC are quite different. Mr and HC values of ITO film are much smaller than that of In2O3. The ITO sample shows a typical semiconducting behavior in whole studied temperature range, while the In2O3 thin film is metallic in the temperature range between 147 and 285 K. Analysis of different conduction mechanisms suggest that charge carriers are not localized in the present films. The profile of the anomalous Hall effect vs. magnetic field was found to be identical to the magnetic hysteresis loops, indicating the possible intrinsic nature of ferromagnetism in the present samples.  相似文献   

7.
The present work reports ferromagnetism by doping magnetic Mn atoms in the diamagnetic ZnO matrix and the ferromagnetism has been extended up to 640 K in nano-grained Zn0.95Mn0.05O samples. The bulk and nano-grained samples were stabilized in hexagonal crystal structure with space group p63mc. The grain size and lattice strain of the samples were estimated from room temperature XRD spectrum. Surface morphology of the samples was examined at room temperature using SEM picture and EDX spectrum. The ferromagnetism of the bulk material shows enhancement in nano-grained samples, which was mainly due to the solution of Mn atoms into the lattice sites of ZnO by mechanical milling. The enhancement of magnetic moment and ferromagnetic ordering temperature with reduction in grain size has been understood in terms of the core-shell structure and existing theoretical models. The present work also demonstrated the role of surface spin disorder on the enhancement of ferromagnetism in Zn0.95Mn0.05O nanograins.  相似文献   

8.
Evidence for ferromagnetism in bulk sintered gallium phosphide (GaP) doped with 3% manganese, having a Curie temperature of 600 K considerably higher than previous observations, is obtained using ferromagnetic resonance (FMR) and AC magnetization measurements. The field position and line width of the resonance showed a strong temperature dependence characteristic of FMR spectra. A non-resonant derivative signal centered at zero field was also observed starting at 600 K further confirming high temperature ferromagnetism. AC magnetization measurements also show the existence of ferromagnetism at high temperature.  相似文献   

9.
MnxGe1−x thin films were prepared by magnetron sputtering with a substrate temperature of 673 K and subsequently annealed at 873 K. The X-ray diffraction (XRD) measurements showed that all samples had a single Ge cubic structure. No films showed clear magnetic domain structure under a magnetic force microscope (MFM). Atom force microscope (AFM) measurements showed that the films had an uniform particle size distribution, and a columnar growth pattern. X-ray photoelectron spectroscopy (XPS) measurements indicated that the valences of both Mn and Ge atoms increase with the Mn concentration. The resistance decreased with increasing temperature, suggesting that the films were typical semiconductors. Magnetic measurements carried out using a Physical Property Measurement System (PPMS) showed that all samples exhibited ferromagnetism at room temperature. There was a small concentration of Mn11Ge8 in the films, but the ferromagnetism was mainly induced by Mn substitution for Ge site.  相似文献   

10.
The dc magnetization and ac susceptibility measurements on two dimensional layered manganite La1.2Ba1.8Mn2O7 samples reveal the occurrence of ferromagnetism above room temperature with ferromagnetic (FM) to paramagnetic (PM) transitions at 338 K. The bifurcation temperatures shown by the zero-field cooled (ZFC) and field cooled (FC) dc magnetization curves at high temperatures shift towards lower temperatures as the applied field is increased from 100 to 2500 Oe. The data are suggestive of a large magnetic anisotropy due to the strong competing ferromagnetic and antiferromagnetic interactions resulting in a spin-glass-like state. Ru doping is found to enhance the ferromagnetism and metallicity of the system in a remarkable way. The magnetoresistance (MR) values obtained are very high and about 40% even at 260 K for the undoped sample.  相似文献   

11.
Grain size effects on magnetic and transport properties for heavily Sr-doped A-type antiferromagnetic La0.4Sr0.6MnO3 ceramics were studied. It was observed that with decrease in grain size, surface ferromagnetism could be introduced due to bond-breaking at surfaces. With decrease in grain size, the surface ferromagnetism was enhanced, and the phase transition order distinguished from the Arrott plot was a second one. The surface-induced ferromagnetism was insulating as judged from transport properties. With decrease in grain size, magnetoresistance was largely improved for both high magnetic and low magnetic fields. Under a 500 Oe magnetic field, the magnetoresistance is improved from 0.2%, 0.1%, 0.03% and 0.02% for the sample with grain size of 150 nm at 10, 100, 200 and 300 K, respectively, to 3%, 2.3%, 0.43% and 0.12% for the sample with grain size of 20 nm at 10, 100, 200 and 300 K. It was interesting to find that large magnetoresistance could be induced due to the surface ferromagnetism in A-type antiferromagnetic La0.4Sr0.6MnO3 nanoparticles, which suggested that it was possible to search for manganites with relatively high low-field magnetoresistance in nanostructured A-type antiferromagnetic materials.  相似文献   

12.
We investigate the variations from as-deposited Zn1-x: Cox O magnetic semiconductors to the post-annealed Co- ZnCoO granular composite. The as-deposited Zn1-x Cox 0 magnetic semiconductor deposited under thermal nonequilibrium conditions is composed of Zn1-x. Cox O nanograins of high Co concentration. The room-temperature ferromagnetism with high magnetization and large negative magnetoresistance are found in the as-deposited samples. By annealing, the samples become of granular composite consisting of the Co metal grains and the remanent Zn1-x CoxO matrix. Although the magnetization is enhanced after annealing, the spin-dependent negative magnetoresistance disappears at room temperature. The magnetoresistance observed in the annealed samples in the high field region has no relation with the ferromagnetism, which in turn indicates that the roomtemperature ferromagnetism and large negative magnetoresistance observed in the as-deposited are the intrinsic properties of the Zn1-x Cox O magnetic semiconductor.  相似文献   

13.
We have measured the zero field and field cooled magnetization of the lightly oxygen doped Cu-rich La2CuO 4 + δ in a wide temperature range (5 K to 350 K). The data together with the evolution of the magnetic hysteresis loop suggest that the ferromagnetism with Curie temperature of 280 K coexists with superconductivity below the transition temperature ∼ 34 K. The coexistence occurs in the hole-rich clusters of size ? 150 nm, which are electronic phase separated from the hole-poor antiferromagnetic background. Received 17 October 2001  相似文献   

14.
The Co-doped ZnO powders were synthesized by sol-gel method, and treated at different temperatures (673-873 K) in the presence or absence of NH3 atmosphere for 0.5 and 2 h, respectively. X-ray diffraction (XRD) and vibrating sample magnetometer (VSM) show that better crystal structure can cause larger ferromagnetism and the second phase (Co3O4) is the reason for saturation magnetization decrease of the sample sintered at higher temperature in air. XPS and nuclear magnetic resonance (NMR) prove the existence of Co2+ ions in the Zn0.9Co0.1O and the absence of Co clusters, indicating intrinsic ferromagnetism of the samples treated in air. However, strong ferromagnetism of the samples annealed in NH3 is ascribed to cobalt nitride formed during annealing.  相似文献   

15.
Detailed structural analysis of the X-Ray diffraction pattern of La0.9Gd0.1FeO3 (LGFO) synthesized via the solid state reaction reveals distorted perovskite structure. Magnetization studies show a characteristic of weak ferromagnetism which is believed to be induced by canted anti-ferromagnetically coupled spins. When explored in a wide temperature and frequency range, AC electrical properties reveal interesting relaxation mechanisms. LGFO exhibits relatively high dielectric permittivity (ε′~4×103) close to room temperature. Temperature dependent magneto-dielectric response appears (magnetodielectric ~−5.5%) even at low magnetic field ~5 kOe. Attractive electrical, magnetic and magnetoelectric properties of the present LGFO at relatively higher temperature makes it a very promising material for application in devices.  相似文献   

16.
Ferromagnetic, semi-insulating Mn-alloyed ZnO films with a Curie temperature above 375 K have been grown by pulsed laser deposition on c-plane sapphire substrates. Antiferromagnetic coupling is revealed by temperature-dependent magnetization measurements. The antiferromagnetic coupling would be compatible with the observed weak ferromagnetism by assuming that the magnetic moments order antiferromagnetically but nonparallel (canted). We find a clear correlation between coercivity and mosaicity of the ferromagnetic Mn-alloyed ZnO films and explain it on the basis of a coercivity mechanism known from soft magnetic materials.  相似文献   

17.
We present a first-principles study of the magnetic properties of N-doped MgO, CaO and SrO, which have been proposed to constitute a new class of dilute magnetic semiconductors (DMSs) with no magnetic elements. In this study, it was found that under a homogeneously distributed condition, Curie temperatures could reach room temperature at sufficient N concentrations in the range of 20–30 at.%; however, an inhomogeneous N distribution in these DMSs is the favored configuration, which indicates that spinodal decomposition leads to a room-temperature blocking temperature at smaller N concentrations than those estimated for room-temperature ferromagnetism in the homogeneous distribution condition.  相似文献   

18.
The importance of doping ZnO with magnetic ions is associated with the fact that this oxide is a good candidate for the formation of a magnetic-diluted semiconductor. Most of the studies reported in Co-doped ZnO were carried out in thin films, but the understanding of the modification of the magnetic behaviour due to doping demands the study of single-crystalline samples. In this work, ZnO single crystals were doped at room temperature with Co by ion implantation with fluences ranging between 2×1016 and 1×1017 ions cm−2 and implantation energy of 100 keV. As implanted samples show a superparamagnetic behaviour attributed to the formation of Co clusters, room temperature ferromagnetism is attained after annealing at 800 °C, but no magnetoresistance was detected in the temperature range from 10 to 300 K.  相似文献   

19.
A series of Cu-doped ZnO ceramics were synthesized from pre-prepared Cu-doped ZnO nanocrystals using a cubic anvil high pressure apparatus under various pressure and temperature conditions. The structures, vibrational spectra and magnetic properties were investigated in detail. The results indicated that the enhancement of ferromagnetism had been achieved for the sample tuned by proper pressure and temperature (5 GPa, 500 °C). The ferromagnetism returned again to the primary state once the tuning temperature was raised up to 800 °C. Compared with those of the samples prepared at ambient pressure, the magnetic properties of the samples tuned by HPHT method had been improved greatly.  相似文献   

20.
Diluted magnetic nonpolar GaN:Cu films have been fabricated by implanting Cu ions into unintentionally doped nonpolar a-plane() GaN films and a subsequent thermal annealing process. The structural, morphological and magnetic characteristics of the samples have been investigated by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and superconducting quantum interference device (SQUID). The sample shows a clear ferromagnetism behavior at room temperature. It is significantly shown that with a Cu concentration as low as 0.75% the sample exhibits a saturation magnetization about 0.65 μB/Cu atom. Moreover, the possible origin of the ferromagnetism for the sample was also discussed briefly.  相似文献   

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