Resonant raman scattering at the E1 energy gap of semiconductor crystals

We present a discussion of resonant Raman scattering by optical phonons at the E₁ energy gap of group IV and groups III–V compound semiconductor crystals (e.g., Ge and InSb). For allowed scattering by TO and LO phonons, the q-dependent “double resonant” two-band calculation of the Raman tensor may display destructive interference effects when the intermediate electron-hole pairs are uncorrelated. We also discuss the Franz-Keldysh mechanism of resonant electric field induced Raman scattering by LO phonons. The double resonance terms due to this mechanism will, for large electric fields, broaden and have its largest resonance enhancement at the energy gap.     

Raman scattering of Zn1−xCdxS mixed crystals

The Raman spectra of Zn_1?xCd_xS crystals are studied. The narrow peak between TO (Γ) and LO (Γ) lines at x ? 0 is due to deffect-induced first order scattering. The anomalously intense peak in the same spectral region at x ? 1 is supposed to be result of resonance interaction between LO (Γ) phonon and quasilocalized vibrations.     

Modified cascade model of resonant Raman scattering: a case study of UV Raman scattering in Zn1−xMnxO thin films

The cascade model of inelastic resonant Raman scattering considers real electronic states in the conduction band (CB) as intermediaries to explain multiple longitudinal optical (LO) Stokes‐shifted lines in the emission spectra. In this study, we report modification in the cascade model under conditions where the scattered photons after multiple transitions have energy lower than the bandgap (E_g) and give rise to higher order n‐LO lines. The higher order n‐LO lines involve electron transition between the trap levels, which are created by impurities or defects in the forbidden energy gap, and are analogous to the real electronic states in CB, depending on the density of defects or impurities in the lattice. The presence of traps in the forbidden gap (1) acts as virtual intermediate states giving rise to higher order n‐LO modes and (2) tends to decrease the radiative recombination probability leading to quenching of the luminescence emission and line width (full‐width at half‐maximum) broadening. Ultraviolet Raman scattering in Mn‐doped ZnO (Zn_1−xMn_xO) thin films were investigated and the experimental observations analyzed in the domain of the modified cascade model. Copyright © 2011 John Wiley & Sons, Ltd.     

Pressure-tuned resonance Raman scattering and photoluminescence studies on MBE grown bulk GaAs at theE 0 gap

Hydrostatic pressure has been used to tune in resonance Raman scattering (RRS) in bulk GaAs. Using a diamond anvil cell, both the photoluminescence peak (PL) and the 2 LO and LO-phonon Raman scattered intensities have been monitored, to establish RRS conditions. When theE ₀ gap of GaAs matchesħω _S orħω _L, the 2 LO and LO-phonon intensity, respectively, exhibit resonance Raman scattering maxima, at pressures determined byħω _L. With 647.1 nm radiation (ħω _L = 1.916 eV), a sharp and narrow resonance peak at 3.75 GPa is observed for the 2 LO-phonon. At this pressure the 2 LO-phonon goes through its maximum intensity, and falls right on top of the PL peak, revealing thatħω _S(2 LO) =E ₀. This is the condition for “outgoing” resonance. Experiments with other excitation energies (ħω _L) show, that the 2 LO resonance peak-pressure moves to higher pressure with increasingħω _L, and the shift follows precisely theE ₀ gap. Thus, the 2 LO RRS is an excellent probe to follow theE ₀ gap, far beyond the Γ-X cross-over point. A brief discussion of the theoretical expression for resonance Raman cross section is given, and from this the possibility of a double resonance condition for the observed 2 LO resonance is suggested. The LO-phonon resonance occurs at a pressure whenħω _L ≈E ₀, but the pressure-induced transparency of the GaAs masks the true resonance profile.     

Light emission at the E1 and E1+Δ1 gaps in heavily doped p-type Ge and GaAs

We report the observation in heavily doped p-type germanium (N_h ≥ 10¹⁸cm^?3) of two weak light emission bands centered at the energies of the E₁ and E₁+Δ₁ interband gaps (2.22 and 2.42 eV at 80 K). These bands, which are 100% polarized, are found only for excitation with laser frequencies slightly above the gaps. We attribute them to photon scattering by inter-valence-band excitations of the holes associated with the heavy doping. The fact that the emission bands do not shift with the exciting laser frequency is assigned to a strong resonance enhancement of this scattering near the E₁ and E₁+Δ₁ gaps. We have also observed the corresponding light emission at the E₁ gap (3.0 eV) in p-type GaAs.     

Raman and infrared spectra of CdIn2S4 and ZnIn2S4

Four one-phonon Raman lines have been found in CdIn₂S₄ (ZnIn₂S₄) spinels at 92 (72) cm^-1, 186 (184) cm^-1, 246 (253) cm^-1, and 367 (372) cm^-1 for incident photon energies well below the energy gap E_G ～ 2.4 (2.2) eV at 300 K. For photon energies close to E_G, the 367 cm^-1 mode underwent a resonant enhancement in CdIn₂S₄ and four infrared active but Raman forbidden F_1u modes appeared in the CdIn₂S₄ and ZnIn₂S₄ Raman spectra: TO modes at 226 (221) cm^-1 and 309 (312) cm^-1, and LO modes at 274 (272) cm^-1 and 340 (342) cm^-1.     

Electric field modulated Raman scattering in CdS

We have observed electric field modulated Raman scattering by A₁ LO phonons in CdS. The field induced scattering is observed with a geometry in which Raman scattering by A₁ LO phonons is normally allowed. The interference of the field induced and allowed terms in the transition susceptibility leads to a modulated Raman scattering intensity proportional to the applied field. This is contrasted with data previously reported on field induced Raman scattering by E₁ LO phonons in a configuration in which the Raman scattering is normally forbidden and in which there is no interference between linear wavevector dependent and field induced terms in the transition susceptibility. Electric field effects on Raman scattering by TO phonons and by 2 LO phonons is also discussed.     

Resonant Raman scattering in GaP in the E0 − E0 + Δ0 region

Resonant enhancement of the cross section for Raman scattering by TO phonons in GaP at the E₀ and E₀ + Δ₀ gaps has been observed using a continuously tunable pulsed dye laser pumped by a nitrogen laser and a gated photon counting system. The resonance at the spin-orbit split E₀ + Δ₀ gap is much weaker than that at E₀ and has not been observed previously in first-order Raman scattering. The results are in good agreement with theoretical predictions.     

Raman scattering by two LO-phonons near Γ in GaAs

Near resonance the second order phonon spectra of semiconductors exhibit peaks which correspond to 2 LO phonons with wave-vector $\text{q}\text{→}\text{?o}$ (2 LO(Γ)). The frequencies of these 2 LO(Γ)-peaks are studied for photon energies varying across the E_o + Δ_o gap of GaAs. These peaks are shown to be slightly shifted to lower frequencies compared with the exact 2 LO(Γ) frequency. The peak positions when plotted as a function of the incident photon energy display an oscillatory behaviour which corresponds to the fact that LO-phonons of different wave vectors are created in the Raman process as the photon energy is tuned across the E_o+Δ_o resonance.     

Resonance Raman spectroscopy of Ga1−xAlxAs mediated via compositional variation

A specially prepared Ga_1−xAl_xAs sample with a laterally graded alloy composition has allowed a novel investigation of resonance Raman scattering from the optical phonons. Instead of varying the exciting light energy, the resonance is probed by changing the alloy composition at fixed incident energy. Both incoming and outgoing resonances are observed at the direct gap of the alloy, free of the usual overwhelming photoluminescence background.     

InGaN薄膜的紫外共振喇曼散射

利用325nm紫外光激发,对不同组分的In_xGa_1-xN薄膜的喇曼散射谱进行了研究.在光子能量大于带隙的情况下,观察到显著增强的二阶A₁(LO)声子散射峰.二阶LO声子峰都从一阶LO声子的二倍处向高能方向移动,移动量随样品In组分的增加而增大,认为是带内Frhlich相互作用决定的多共振效应引起的.分析了一阶LO声子散射频率和峰型与In组分的关系.在喇曼谱中观察到样品存在相分离现象,并与X射线衍射的实验结果进行 关键词： xGa_1-xN合金')" href="#">In_xGa_1-xN合金 紫外共振喇曼散射 二阶声子 相分离     

The 7Li (n,γ)8Li radiative capture at astrophysical energies

The possibility to construct intercluster interaction potentials in continuous and discrete spectra is shown in one‐channel cluster model based on the classification of orbital states according to Young schemes. These potentials usually contain Pauli forbidden states, and correctly describe elastic scattering phase shifts taking into account resonance behavior and main characteristics of the bound states of nuclei in the considering cluster channel. The versions of intercluster interaction potentials describing the resonance nature of some phase shifts of the n⁷Li elastic scattering at low energies and the P₂ ground state of ⁸Li in the n⁷Li cluster channel have been constructed for the demonstration of this approach. The possibility of describing the total cross sections of ⁷Li (n,γ)⁸Li within the energies from 5 meV (5 · 10^‐3 eV) to 1 MeV, including resonance at 0.25 MeV, has been demonstrated for the potentials obtained in the potential cluster model with forbidden states.     

Inelastic electron scattering in nickel

Using a 200 keV electron spectrometer, with an energy resolution of ～0.25 eV and a momentum resolution of ～0.2 A^-1, we have measured the energy loss spectra for transmission of electrons through thin (～600 Å) Ni films. These results address the general question of the validity of momentum transfer estimates in electron loss scattering.Using low-energy electron backscattering, we have observed the dipole forbidden M₁ transition at 112 eV. For high-energy scattering, we have observed this transition only at high momentum transfer (q? 2 A^-1). These results indicates sizable contributions from high momentum transfer collisions in the low-energy experiments.     

Resonance Raman scattering in Ti2O3 in the range 1.8–2.7 eV

Measurements of resonance Raman scattering from the A_1g and E_g modes of Ti₂O₃ at room temperature were made in the energy range 1.8–2.7 eV. The results are interpreted in terms of a phonon modulation of the optical spectrum and related energy level structure. New information concerning assignments of interband transitions as well as further insight into the nature of d-electron/phonon interaction has been obtained.     

Die Winkelabhängigkeit der Resonanzstreuung niederenergetischer Elektronen an N2

Results of scattering experiments with monochromatic electrons in the energy range from a few tenth of an eV to about 16 eV are reported. Below 1.8 eV collision energy no resonance structures have been found either in the total scattering (transmitted current) or in the elastic and inelastic differential cross sections. The resonances above 1.8 eV have been measured in the elastic and inelastic channels (up to vibrational quantum numberν=8 of the N₂-molecule) in the angular range from 10° to 110°. In the inelastic channelsν≧2 especially the first resonance peak appears asymmetric, as predicted by calculations of the associated Franck-Condon-factors. In all inelastic channels the angular dependence (due to the pure resonance scattering) shows maxima at 0° and 90° and a minimum around 55°, probably indicating gerade-symmetry of the associated N ₂ ^? -state. Excitation functions of three states of N₂ were measured between their thresholds (between 11 and 12 eV) and 15 eV, one of them showing several new resonance structures.     

Temperature dependence of the energy gap of MgxZn1−xTe semiconductors alloys

Wavelength-modulation spectroscopy is used to obtain the temperature dependence of the near band gap reflectivity spectrum E_o of Mg_xZn_1?xTe ternary semiconducting alloys. Results are given in the range 80–100 K for the cubic materials: 0〈x〈0.5. The analysis of the line shapes as a function of x and T confirms the hypothesis of an exciton bound to the complex defect associated with zinc vacancy, as ZnTe. The E_o(x) curve is parabolic. The bowing parameter is C=0.45 ± 0.1 eV at 80 K, C=0.6 ± 0.1 eV at 300 K. Within experimental scattering the temperature coefficient dE₀dT is nearly constant with x:-4.5±0.3 × 10^?4eVK^?1. This data is smaller than the value calculated in the literature for ZnTe from pseudo potential method.     

Fano resonance in heavily doped porous silicon

Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si SiO₂ interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. Copyright © 2011 John Wiley & Sons, Ltd.     

Resonant Raman scattering at higher M0 exciton edge in layer compound InSe

Resonant Raman spectra of γ-rich InSe have been measured at the absorption peak, E'₁, which lies 1.2 eV above the lowest direct gap. The resonance behaviors observed indicate that the E'₁ peak is due to the formation of damped M₀ excitons.     

Electroabsorption in TlInS2

Electroabsorption spectra of single crystals have been studied near the fundamental absorption edge at 77 and 300 K. At 300 K two positive peaks (2.34 and 2.42 eV) and a negative peak (2.38 eV) are observed in the electroabsorption spectrum. At liquid-nitrogen temperature a fine structure corresponding to the formation of a parabolic exciton (2.503 eV) is observed.Values of the width of the forbidden gap E_g, the n = 1 exciton positions, the exciton activation energy ΔE_b, the effective Bohr radius a_exc, the reduced effective mass of an electron-hole pair μ, and the exciton ionization field F(E_g = 2.535 eV, E_exc = 2.503 eV, E_b = 32 meV, $\text{a}{}_{\mathrm{<mtext>exc</mtext>}}\text{=}\text{28}\text{A}\text{A;}\text{;}$;, μ = 0.15 m₀, and F = 1.2 × 10⁵ V cm^-1) have been determined from the electroabsorption spectrum.