Raman scattering by two LO-phonons near Γ in GaAs |
| |
Authors: | Diego Olego Manuel Cardona |
| |
Institution: | Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Federal Republic of Germany |
| |
Abstract: | Near resonance the second order phonon spectra of semiconductors exhibit peaks which correspond to 2 LO phonons with wave-vector (2 LO(Γ)). The frequencies of these 2 LO(Γ)-peaks are studied for photon energies varying across the Eo + Δo gap of GaAs. These peaks are shown to be slightly shifted to lower frequencies compared with the exact 2 LO(Γ) frequency. The peak positions when plotted as a function of the incident photon energy display an oscillatory behaviour which corresponds to the fact that LO-phonons of different wave vectors are created in the Raman process as the photon energy is tuned across the Eo+Δo resonance. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |