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Raman scattering by two LO-phonons near Γ in GaAs
Authors:Diego Olego  Manuel Cardona
Institution:Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000 Stuttgart 80, Federal Republic of Germany
Abstract:Near resonance the second order phonon spectra of semiconductors exhibit peaks which correspond to 2 LO phonons with wave-vector q?o (2 LO(Γ)). The frequencies of these 2 LO(Γ)-peaks are studied for photon energies varying across the Eo + Δo gap of GaAs. These peaks are shown to be slightly shifted to lower frequencies compared with the exact 2 LO(Γ) frequency. The peak positions when plotted as a function of the incident photon energy display an oscillatory behaviour which corresponds to the fact that LO-phonons of different wave vectors are created in the Raman process as the photon energy is tuned across the Eo+Δo resonance.
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