SrS:Eu与SrS:Eu,Sm中电子陷阱与光存储研究

对SrS:Eu和SrS:Eu,Sm激发初始阶段的荧光上升过程和余辉进行了研究,并进一步考证其中 电子陷阱的属性.通过两种样品和两个阶段的比较,对陷阱数量和深度的变化、量子效率以 及电子俘获和释放、复合过程进行了分析,发现Sm离子并不影响陷阱的数量.利用吸收光谱 方法研究了SrS:Eu,Sm中电子由陷阱能级向导带的跃迁.通过陷阱饱和-倒空吸收谱差,即激 励吸收谱及其强度随Eu,Sm浓度的变化,探讨了掺杂浓度对陷阱浓度和光存储饱和量的影响. 结果表明Sm离子的作用是使陷阱能级加深从而能稳定地储存电子.通过激励吸收谱峰值强度 可确切地比较光存储材料在这方面的性能,并与光激励谱的测量方法作了对照. 关键词： 电子陷阱 光存储 电子俘获 光激励发光     

稀土掺杂碱土金属硫化物晶体中的载流子俘获中心

研究了典型红外激励发光材料XS:Ra,Sm(X=Sr,Ca;Ra=Ce,Eu)的激励发光过程中电子与空穴的俘获中心及其转移过程,通过激发前后的红外吸收光谱的差异及吸收差与光激励谱的细微结构说明,电子俘获中心并不是Sm³⁺离子,但与Sm³⁺离子处于相邻的空间位置关系,Sm³⁺离子在载流子俘获与复合的过程中也没有发生价态或数量的变化,进一步的EPR谱研究表明Eu²⁺离子的价态在激发前后也没有发生变化。与共价性强的Ⅲ-Ⅴ族半导体晶体不同的是,在这类离子性较强的晶体中,载流子被杂质所引起的晶格缺陷而非杂质本身俘获。在多种发光中心的情况下,不同的激发波长可以使空穴束缚在不同的发光中心附近,随后产生不同的光激励发光。     

电子俘获材料CaS∶Eu,Sm光谱特性研究

研究了电子俘获材料CaS∶Eu,Sm多晶粉末的紫外-可见-红外吸收光谱及红外激励光谱.研究结果表明,CaS∶Eu,Sm中主激活剂Eu和辅助激活剂Sm分别以Eu2 离子和Sm3 离子的形式存在;ETM的吸收差谱及红外激励光谱所反映的光谱特性是不同的.紫外-可见光区的吸收差谱给出了ETM光谱存储灵敏度的信息,而红外光谱区的吸收差谱给出了ETM所俘获电子数量的信息及电子陷阱能级的特征(深度和宽度)信息.红外激励光谱则反映了ETM将不同波长的红外激励光的能量转换为特定波长处的红外辐射光能量的光谱转换灵敏度.二者结合起来可以更完整地描述ETM的光谱特性.     

电子俘获材料CaS∶Eu,Sm光谱特性研究

研究了电子俘获材料CaS∶Eu,Sm多晶粉末的紫外-可见-红外吸收光谱及红外激励光谱.研究结果表明,CaS∶Eu,Sm中主激活剂Eu和辅助激活剂Sm分别以Eu2+离子和Sm3+离子的形式存在；ETM的吸收差谱及红外激励光谱所反映的光谱特性是不同的.紫外-可见光区的吸收差谱给出了ETM光谱存储灵敏度的信息,而红外光谱区的吸收差谱给出了ETM所俘获电子数量的信息及电子陷阱能级的特征（深度和宽度）信息.红外激励光谱则反映了ETM将不同波长的红外激励光的能量转换为特定波长处的红外辐射光能量的光谱转换灵敏度.二者结合起来可以更完整地描述ETM的光谱特性.     

Tm3+掺杂SrAl2O4:Eu2+的光激励和热释光性能

通过高温固相法制备出Sr_{0.98-xAl2O4:0.02Eu²⁺,xTm³⁺(x=0,0.01,0.02,0.03,0.04,0.05)系列样品,并对其光激励和热释光性能进行了研究。在SrAl2O4:Eu²⁺原有陷阱能级结构的基础上,通过Tm³⁺的掺杂引入了更深的陷阱TB,并增加原有陷阱TA浓度,进而优化了材料的光存储容量及光激励特性。对比研究了系列样品的初始光激励发光强度和热释光强度随着Tm³⁺掺杂量的变化规律,证实陷阱TB为光激励发光提供了有效俘获中心。当Tm³⁺的掺杂摩尔分数x=0.03时,材料中的陷阱TB的浓度达到最高值,同时光激励发光强度最大。对比Tm³⁺共掺前后热释光图谱,通过Chen's半宽法计算出了引入陷阱TB的陷阱深度。实验结果证实材料中TB的浓度对其光激励发光性能起着决定性的作用。在980 nm激发下,由深陷阱TB释放出来的电子可以再次被浅陷阱TA俘获,这种浅陷阱TA的再俘获效应在光激励发光过程中表现为光激励余辉现象。}     

SrS∶Eu,Sm光存储机理的研究

采用高温固相反应法在还原气氛下制备了SrS:Eu,Sm样品,利用荧光光谱仪测量了这种光存储材料的激发光谱和发射光谱.将样品用紫外灯(265 nm)照射激发饱和后,再用980 nm的红外激光器激励,利用荧光光谱仪测试得到了峰值位于599 nm的光激励发光光谱.此外还利用热释光谱仪测试了样品的热释光谱.探讨了SrS:Eu,Sm的光存储机理,认为引入的稀土离子在SrS的带隙中形成分裂能级.当用紫外光照射材料时,Eu的电子从基态被激发到激发态或基质材料的导带,其中一部分电子被辅助激活剂Sm的陷阱俘获,实现信息写入.当材料被与陷阱深度相当的红外光激励时,电子陷阱Sm2 俘获的电子才可能跃出俘获能级,与空穴在Eu的激发态和基态能级上复合,多余的能量以可见光的形式释放出来,实现信息读出.     

CaS∶Eu,Sm光存储材料的光谱特性

CaS∶Eu, Sm是一种典型的电子俘获型光存储材料,文章采用湿法在还原气氛中制备了CaS∶Eu, Sm粉末样品。测量了这种光存储材料的XRD、激发光谱、发射光谱、光激励发光光谱、热释光谱以及光激励发光衰减曲线。XRD结果表明样品在1 050 ℃晶格已经形成。光谱测试结果说明紫外光可激发该材料,作为信息写入光源。样品被紫外光源饱和激发后,用980 nm红外激光激励,发射出峰值位于635 nm的红光。光激励发光起初衰减较快,随后有一个较长的平缓期。且样品具有合适深度的陷阱能级,能够稳定存储信息。对CaS∶Eu, Sm的光存储机理进行了探讨。     

新型电子俘获型材料β-Sr2SiO4:Eu2+, La3+长余辉和光激励发光性能的研究

通过高温固相法在还原气体保护下制备出β-Sr₂SiO₄: Eu²⁺, La³⁺系列样品. 通过样品光谱显示, 光致发光、余辉及光激励发光中心均来自于Eu²⁺离子; 并且La³⁺ 的掺入有效增强光致发光、余辉及光激励发光强度. 热释光与余辉衰减测试证明, 与单掺Eu²⁺样品所具备的缺陷数量相比, 共掺La³⁺样品在浅陷阱区(T1区)较多的俘获中心数量是导致其余辉性能优化的主要因素; 其光激励发光强度的增强则归因于在深陷阱(T3区)的俘获中心数量增加. 共掺样品放置15h并在980nm红外激光激励后, 表现出光激励长余辉发光现象. 此现象的出现, 为电子俘获型材料的浅陷阱对深陷阱中的载流子再俘获过程的存在提供了直接证据. 因此, β-Sr₂ SiO₄: Eu²⁺, La³⁺ 材料可视为一种潜在的长余辉和光激励发光材料.     

BaFBr中O2-的发光研究

通过比较紫外和真空紫外光辐照前后，BaFBr以及BaFBr:O样品的发光，研究氧在光激励发光材料中所起的作用。未经辐照的样品，在240nm光激发下，BaFBr:O有峰值为330、345、540nm以及440、480、502nm肩峰的发光，而对BaFBr却探测不到发光。辐照后，在240nm激发下，BaFBr以及BaFBr:O样品都可观测到相近的发光，只是相对强度略有不同，指出样品的发光来源于氧。在100－400nm范围内，BaFBr以及BaFBr:O样品的吸收谱中存在四个宽的吸收带，表明紫外和真空紫外光可激发或电离占据氟离子格位的O^2-离子，氧在BaFBr光激励发光材料中可充当空穴陷阱。     

电子俘获光存储材料BaLiF3:Eu2+的光激励发光及光存储性质研究

利用高温固相反应法制备了混晶状的BaLiF3:Eu2 样品.其紫外光激发的发射峰与光激励发光峰均在410 nm处,属于Eu2 的5d-4f跃迁发光.光激励峰位于660 nm,因而可以配用简单廉价的氦氖激光器.根据光谱特征给出了光激励发光的简单机理.测量了该材料光激励发光衰减性能,结果表明BaLiF3:Eu2 存储的信息可以方便地擦除掉.该材料具有优良的光激励发光特性,是一类很有发展前途的电子俘获光存储材料.     

Estimating the parameters of traps in quartz by the variable energy of stimulation optically stimulated luminescence (VES-OSL) method

Optical-cross section that is a trap parameter estimated from the measurements of optically stimulated luminescence (OSL) is not a uniquely determined physical quantity. It depends not only on temperature and the energy of stimulation light but also, in the simplest case, on the optical depth of trap, the frequency of vibration mode and on the Huang-Rhys factor, i.e. the average number of phonons involved in the process of optical excitation of electrons from trap to conduction band. Conventional OSL measurement techniques do not enable to determine directly these parameters but they could be estimated by applying the variable energy of stimulation optically stimulated luminescence (VES-OSL) method. Recently it was put in to practice and the first VES-OSL curves were presented. In this study the outcomes of VES-OSL experiments are presented together with the first attempt of direct estimating the optical depth of traps active in OSL process in quartz.     

Spectral information from minerals relevant for luminescence dating

The paper reviews basic spectral features of luminescence from minerals used in dating and allied research. Luminescence production is a result of multiple interactions within the imperfect crystal lattice and spectral information is not limited to the emission of light. Results of spectral investigations of luminescence emission during thermal stimulation (TL) or optical stimulation (OSL) form the main part of the paper. However, information on luminescence excitation and light absorption spectroscopy is also presented and possible links between luminescence production in minerals and particular lattice defects are considered. Quartz and feldspars, the most commonly used minerals, receive special attention, but the review includes other materials such as polymineral fine-grained fractions from sediments, zircon, calcite and other salts (halite, sulfate), meteorites, flint, volcanic materials (obsidian, tephra), ceramics and metallurgical slags. Although a wide range of different luminescence emission wavebands occur, it can be shown that certain emissions dominate in particular materials. Basic dosimetric properties are often known just for single emission wavebands of a particular mineral, and are listed in this case. The paper also aims to provide a starting point and inspiration for the study of other TL and OSL emissions, with particular regard to their potential and suitability for dating and related dosimetry tasks. These investigations, involving palaeodose determination based on an emission waveband with known characteristics, need careful separation of the particular emission peak, which may be influenced by its behaviour during the dating procedure (sample preparation, irradiation, preheat treatments, luminescence measurements, etc.). Spectral information available in this context and some technical remarks on the experimental conditions will be given to pave the way for conventional TL or OSL measurements in luminescence dating and dosimetry using natural or semi-natural materials.     

热释光和光释光发光谱的测量

介绍了自行研制的计算机化热释光和光释光三维光谱测量装置的系统结构及其工作原理.在计算机的控制下,通过精密加热器或激发光源以热激发或光激发的方式使样品发光.从样品发出的光经过光路和光栅分光系统后,形成光谱,被高灵敏度的CCD采集,再将光谱图像模拟信号变为可以直接用计算机进行数据处理的数据信号.波长范围200~800nm,波长分辨率优于2nm,人机界面友好,操作方便.利用热释光和光释光三维光谱测量装置测量了SrSO₄:Eu(0.1%,摩尔分数)和CaSO₄:Eu(0.1%,摩尔分数)的光释光发光谱和热释光发光谱,得到SrSO₄:Eu的光释光发光波长与热释光发光波长均为375nm,而CaSO₄:Eu的光释光发光波长与热释光发光波长均为385nm,说明热释光和光释光具有相同的发光中心,均来自于Eu²⁺的能级跃迁.同时在CaSO₄:Eu的热释光发光谱中还观察到了Eu³⁺的发光.与二维发光曲线相比较,通过对三维热释光和光释光发光谱的研究,可以得到更丰富的信息,这有助于对热释光和光释光发光机制进行更深入的研究.     

聚丁二炔Langmuir—BLodgett薄膜的光声谱研究（Ⅱ）光谱综合分析和荧 …

本文用光声谱结合光吸收谱,荧光光谱等对在工业上在潜在应用前景的聚十炔（ｐｏｌｙｄｉａｃｅｔｙｌｅｎｅ,ＰＤＡ）Ｌａｎｇｍｕｉｒ－Ｂｌｏｄｇｅｔｔ（ＬＢ）薄膜进行了研究。     

用巯基乙酸作稳定剂制备CdSe纳米晶的光学性质

以巯基乙酸为稳定剂制备了CdSe纳米晶，通过尺寸选择沉淀得到2nm到3nm之间不同尺寸的纳米晶，利用室温光吸收，光致发光（PL）和光致发光激发（PLE）谱来研究了CdSe纳米团簇的光学性质。紫外－可见吸收谱给了具有清晰激光特征的尖锐吸收边，这表明样品的尺寸分布很窄。光致发光研究表明，样品有两个发射带，一个具有较高能量位于吸收边，来自电子－空穴对从最低激发态能级弛豫后的辐射复合，另一个低能发射带归属于基质与纳米晶界面存在的俘获中心。PLE谱中有2个吸收带，分别是S－S和P－P跃迁。最后还给出了不同激发能量下的发光特性。     

聚丁二炔Langmuir-Blodgett薄膜的光声谱研究(Ⅱ) 光谱综合分析和荧光量子效率

本文用光声谱（ｐｈｏｔｏａｃｏｕｓｔｉｃｓｐｅｃｔｒｏｓｃｏｐｙ,ＰＡＳ）结合光吸收谱、荧光光谱等对在工业上有潜在应用前景的聚丁二炔（ｐｏｌｙｄｉａｃｅｔｙｌｅｎｅ,ＰＤＡ）Ｌａｎｇｍｕｉｒ－Ｂｌｏｄｇｅｔ（ＬＢ）薄膜进行了研究。对经不同气体环境处理的ＰＤＡＬＢ膜的紫外－可见光声谱、光吸收谱和荧光光谱的综合分析表明,ＰＤＡＬＢ膜的激发态弛豫过程中激子和极化子形成的元激发性质。此外,还讨论了ＰＤＡＬＢ膜的荧光量子效率。本文的研究结果表明,用光声谱研究ＬＢ膜,可以获取仅用其他光谱得不到的信息。     

Strongly confined semiconductor quantum dots: Pair excitations and optical properties

This paper reviews a microscopic model of basic electron-hole pair excitation processes in strongly confined semiconductor quantum dots (QD) and their influence on the optical QD properties. The effects of valence band mixing, Coulomb interaction, and surface polarization are taken into account. The exciton and biexciton wave functions and energies are obtained using a numerical diagonalization method. The computed optical spectra, such as absorption, gain, pump-probe, and two-photon absorption, agree well with experiments.     

Modelling the thermal bleaching of OSL signal in the case of a competition between recombination centres

The thermal bleaching of the optically stimulated luminescence (OSL) has been investigated by computer simulations for a model including three traps and two luminescence centres. The deepest trap is active only during the OSL process. Two other traps are active only during the thermal bleaching. The thermal bleaching effects on the OSL intensity as well as on the OSL curve shape are presented for the wide range of trap and luminescence centre parameters and for the different settings of optical detection window. The conventional OSL curve analysis consisting in decomposition of the OSL curve into first order components is applied to the simulation results and the optical cross section spectra obtained as a result of this analysis are compared with the model assumptions. The simulations show that OSL signal can decrease to undetectable level even when the traps related to this signal are not emptied during thermal bleaching. The residual level of the OSL signal after bleaching process, however, depends strongly on centre parameters and concentrations. The modifications of optical detection spectral window lead to significant changes of bleaching effects. The thermal bleaching influences also the optical cross section spectra obtained as a result of the OSL curve decomposition.     

外场作用下蒽分子的激发特性研究

蒽(anthracene)具有良好的热稳定性以及较高的荧光量子产率的优点, 是最早用于研究有机发光器件(organic light-emitting device, OLED)的材料之一. 在本文中, 主要利用量子化学方法研究了不同外电场对蒽分子激发特性的影响规律. 首先采用密度泛函理论(density functional theory, DFT)在6-311G(d, p)基组水平上对蒽分子基态结构进行优化, 基于稳定基态结构, 利用含时密度泛函(time-dependent density functional theory, TDDFT)以及同一基组水平, 计算出蒽分子的前十个激发态的激发能、跃迁偶极矩、振子强度和紫外吸收光谱等数据. 然后以密度泛函B3P86方法优化出的不同外电场下蒽分子基态结构为基础, 使用TDDFT方法研究了不同外电场对蒽分子前线轨道能级和激发特性的影响规律. 结果显示, 无场时蒽分子在紫外区域234.50 nm处有一个较强的吸收峰, 对应基态电子跃迁至第5激发态吸收光子波长; 在外电场作用下, 蒽分子电子由基态跃迁到激发态的各项光谱参数均有显著变化, 加场后蒽分子的吸收光谱发生了红移, 由紫外波段移向了紫外–可见光波段, 与实验值相符合. 分子前线轨道的计算结果也表明蒽分子的最高占据轨道(highest occupied molecular orbital, HOMO)和最低未占据轨道(lowest unoccupied molecular orbital, LUMO)能量差值在不同电场下存在差异. 关键词： 蒽 外电场 激发特性     

Optical depth of traps in AL2O3:C determined by the variable energy of stimulation OSL (VES-OSL) method

Standard methods of OSL measurements (CW-OSL or LM-OSL) do not allow for the direct determination of optical depth of traps. The variable energy of stimulation optically stimulated luminescence (VES-OSL) method gives such possibility. It consists in optical stimulation with the continuous increase of stimulation light energy and is analogous to the glow curve method in TL measurements. The VES-OSL curve shape and maximum position can be regulated by the stimulation photon flux, the rate of stimulation energy increase and by measurement temperature. This allows for detecting the OSL from very deep traps that give the TL signal overlapping with strong incandescence. The VES-OSL measurements carried out for Al₂O₃:C showed that traps having the optical depth between 2.0 and 2.8 eV are responsible for the OSL signal related to TL peak at about 200 °C. The OSL signal from the much deeper traps from the range 2.8–3.3 eV was also detected. The TL signal related do these traps cannot be detected below 500 °C.