复杂结构沿面闪络产生发展阶段模拟研究

以天光Ⅱ-A装置X-pinch负载腔为例，采用包含场致发射、二次电子倍增模型的三维模拟软件OPAL，对复杂结构中真空绝缘体沿面闪络的产生与发展阶段进行了模拟研究。模拟结果表明，阳极产生的二次电子在平行于绝缘体表面的电场分量的作用下从阴极座向大半径的运动，是导致沿面闪络的主要原因。并提出了阻断沿面闪络的方法及其原理。采用阻断沿面闪络的措施后，后续多次X-pinch负载腔放电实验证明，正常的回流电流增加了近20%，真空绝缘体上的沿面闪络得到了抑制。；     

圆形平板电极与薄膜层叠结构的沿面闪络性能

强电磁脉冲模拟装置中用于脉冲压缩的陡化电容器常采用电极与薄膜介质层叠的结构，其主要绝缘失效模式为沿面闪络。采用圆形平板电极，在SF₆绝缘环境中和加载电压为前沿约30 ns的纳秒脉冲电压的条件下，实验研究了陡化电容器关键结构参数和气压对沿面闪络性能的影响。结果表明:（1）电极厚度、气隙和表面涂覆均不能明显改变层叠结构的沿面闪络电压；（2）气压可以提高层叠结构的沿面闪络性能，但是存在饱和趋势；（3）薄膜介质层数与沿面闪络电压近似线性比例关系；（4）增长薄膜介质伸出长度能显著提高沿面闪络电压。基于流注理论对上述结果进行了探讨，认为极不均匀场中，闪络起始主要由高场强区域决定，但是闪络通道的形成和发展主要由闪络路径上的背景电场决定，因此减小层叠结构三结合点处电场对闪络性能影响不大，但减小闪络通道发展路径上的背景电场，可以有效提高层叠结构的沿面闪络电压。     

脉冲条件下绝缘介质气体沿面闪络发光特征

对大气环境中脉冲电压加载下绝缘介质沿面闪络放电开展了初步放电图像诊断研究。采用超高速可见光分幅相机诊断指状电极结构下有机玻璃材料在大气环境中不同时刻闪络通道发光图像特征。实验结果表明:闪络通道形成和扩张阶段中，阴极区域和阳极区域均产生放电发光，放电通道沿固体电介质表面快速贯穿，贯穿时间约15 ns，贯穿后发光通道逐渐扩张至一定区域，发光强度大，维持时间长，整体发光时间可持续到μs量级，放电通道内能量分布有所差异。     

百纳秒脉冲下绝缘材料沿面闪络特性北大核心CSCD

为研究百纳秒脉冲下两种典型的绝缘材料(尼龙和有机玻璃)在气体中的沿面闪络特性,设计了百纳秒脉冲沿面闪络实验平台。通过实验研究了绝缘材料的闪络电压随气体气压、闪络距离、等物理因素的变化规律,实验表明:闪络电压随着气压的增加而增加,但是闪络场强随着闪络间距的增加而降低;在相同条件下,有机玻璃的闪络电压比尼龙高。同时通过沿面闪络实验,得到在百纳秒脉冲下不同气压、不同闪络间距的闪络电压值。     

微堆层绝缘子的研制与初步实验研究

 为发展新型介质壁加速器技术,研制了微堆层绝缘子并开展了初步的实验研究。利用有限元及粒子模拟方法,理论计算了微堆层绝缘子的沿面电场分布及电子运动轨迹,提出微堆层绝缘子的优化设计方案;采用高温层压的方法,研制出以聚全氟乙丙烯薄膜为介质层、不锈钢膜为金属层的微堆层绝缘子试样,并初步开展了纳秒脉冲下微堆层绝缘子的真空沿面闪络实验。研究结果表明：微堆层绝缘子具有良好的真空沿面闪络性能,其闪络场强可达180 kV/cm。     

激光触发真空沿面闪络开关的初步实验研究

 介绍了沿面闪络开关的发展状况和基本原理，实验研究了真空条件下激光触发介质沿面闪络特性。实验采用固体Nd:YAG纳秒激光器作为触发源，对试样施加正直流高压，电压范围1～6 kV，试样绝缘子为直径50 mm的尼龙6。通过研究不同激光能量、波长和聚焦形状对介质闪络的影响，总结出适用于沿面闪络开关的激光触发形式。实验表明：在一定电场和真空度下闪络的时延和抖动将随着输入激光能量的提高而减小，而激光可触发的电压范围将提高；激光波长减小有助于提高触发的稳定性；激光焦斑的形状是沿面闪络触发的最大影响因素，采用具有一定能量密度、焦斑横跨两电极的带状激光来触发闪络是闪络开关的理想选择。     

不同E/cB值下同轴绝缘子闪络特性

基于磁场闪络抑制原理,研究了由回路电流产生的同轴自磁场对径向真空固体绝缘界面沿面闪络特性的影响规律。根据同轴结构电场E和磁场B的比值与半径无关、只与电路参数相关的特点,分别设计了E/cB（c为光速）为0.041,0.05,0.056和0.062的四种同轴电极结构,开展了有磁场和无磁场两种条件下电介质的真空沿面闪络实验研究。实验结果表明,在有利于磁场闪络抑制条件的自磁场位形下,真空沿面闪络耐压水平相比无磁场情况有明显提高,且比值E/cB越小闪络电压提高幅度越大。当E/cB比值为0.041时,沿面闪络电压可提高约1.3倍;而当自磁场位形反向时,沿面闪络电压相比于无磁场情况有所降低。     

强流电子束二极管陶瓷真空界面

从绝缘和机械强度两方面优化设计了一种应用于强流电子束二极管的陶瓷真空界面。首先,依据真空沿面闪络机理及其影响因素,针对外径220mm的陶瓷板,应用ANSYS静电场模拟,通过对阴极电极形状和阳极外壳尺寸的调整,使得陶瓷沿面电场和阴、阳极三结合点场强均得到了有效控制。模拟结果显示:陶瓷沿面电场分布均匀,阴、阳极三结合点场强小于30kV/cm,电场线与陶瓷表面所成角度基本保持在45°;其次,针对陶瓷与电极的约束结构,通过静力和瞬态冲击分析,确定了该陶瓷界面可承受的最大静压和冲击波最大峰压分别为4.8MPa和60MPa;最后,在脉宽200ns的脉冲功率驱动源上进行了实验研究,陶瓷真空界面平均绝缘场强达到44kV/cm,二极管运行稳定,机械性能可靠,实验结果与理论设计相符。     

外加磁场下真空沿面闪络特性数值模拟

以单粒子模型和带电粒子运动方程为基础,采用蒙特卡罗方法,编写了真空沿面闪络过程计算程序,研究了外加磁场对真空沿面闪络过程的影响,主要是对二次电子发射及电子束的雪崩运动的影响。研究表明:外加磁场的存在,改变了绝缘体表面电子的运动,进而影响到绝缘体表面电荷的分布,从而在宏观上对绝缘体的耐受电压产生影响;外磁场抑制真空沿面闪络的效果与磁场的空间分布有关,磁场加在阴极附近时产生的效果优于加在阳极附近。     

长脉冲二极管绝缘子真空表面闪络

 在长脉冲强流无箔二极管实验过程中观察到绝缘子沿面闪络现象。分析实验现象认为是屏蔽环与绝缘子距离过近造成了屏蔽环边缘高场强,从而产生场致发射电子。电子在强电磁场作用下撞击绝缘子表面引起了二次电子雪崩从而导致真空表面闪络。运用静电场模拟和粒子束模拟,改进屏蔽环结构。改进后的二极管工作电压500 kV,电流12 kA,在1 T引导磁场下稳定运行,没有再发生真空表面闪络。     

“神龙二号”气体火花开关中绝缘结构的电场分析与优化

气体火花开关作为重要部件被大量地应用于直线感应加速器和Z箍缩等大型脉冲功率装置中。绝缘结构设计不合理会使得气体火花开关中出现局部电场畸变和电荷积聚等现象。在高电压脉冲下长时间或高频次运行时,火花开关中的绝缘子会发生沿面闪络现象,直接影响到脉冲功率装置的正常运行。鉴于此,对气体火花开关中的绝缘结构进行了有限元电场分析,用表面电荷的积聚定性解释了沿面闪络发生的原因。通过对绝缘子的几何结构和电极尺寸的优化设计,有效降低了绝缘子表面和电极表面的电场强度,其中阳极三结合点场强从9.4 kV/mm降至1.5 kV/mm,阴极三结合点场强从2.95 kV/mm降至0.98 kV/mm,绝缘子表面最高场强从10.8 kV/mm降至4.95 kV/mm。优化后的绝缘结构电场分布较为合理,降低了由于表面电荷的积聚而引发沿面闪络的概率。     

一种重复脉冲同轴馈电型陶瓷真空界面

真空界面是脉冲功率装置的薄弱环节,对于重频运行的系统,该问题更为突出。介绍了一种应用于重频脉冲驱动源的陶瓷绝缘子真空界面。首先依据真空沿面闪络设计原则给出了一种改进型同轴馈电陶瓷真空界面绝缘结构,该结构采用陶瓷-金属钎焊连接形式;通过采取均压、屏蔽措施,静电场模拟结果显示,陶瓷沿面电场分布均匀,总场强小于100 kV/cm,沿面分量小于70 kV/cm,阴、阳极三结合点场强均小于40 kV/cm;在输出幅值600 kV、脉宽80 ns、重复频率1~5 Hz可调的脉冲功率驱动源上进行了实验测试,陶瓷真空界面平均绝缘场强达到44 kV/cm,运行稳定;采取(0-1)分布对实验结果进行了统计分析,置信度取为0.9时,陶瓷真空界面的可靠度大于97%。最后,还探讨了表面处理工艺对闪络电压的影响,实验发现,增加表面粗糙度可有效提高陶瓷绝缘子的闪络电压。     

金属表面镀高分子膜对真空击穿阈值的影响

探索提高金属表面真空击穿阈值的方法，对脉冲功率技术的发展和应用具有重要意义。在金属表面电子发射理论分析的基础上，采用有限元法计算阴极杆表面电场随二极管电压的变化规律，设计了实验系统，并开展了实验研究。实验对比了在脉宽约30 ns、阴极杆与阳极筒间隙12 mm时，钛合金TC4阴极杆在不同种类高分子膜（膜厚30～60 μm）下真空击穿阈值的变化情况。在表面粗糙度R_z（轮廓最大高度）为0.8 μm的TC4阴极杆表面分别镀环氧树脂膜和丙烯酸膜，实验结果表明，镀丙烯酸膜阴极杆的击穿阈值约505 kV/cm，相对于不镀膜阴极杆，击穿场强提高了约20.6%；在表面粗糙度R_z为0.2 μm的TC4阴极杆表面分别镀聚酰亚胺膜和聚醚醚酮膜，实验结果表明，镀聚酰亚胺膜阴极杆的击穿阈值为584 kV/cm，相对于不镀膜阴极杆，击穿场强提高了约28.1%。因此，在金属表面镀丙烯酸膜、聚酰亚胺膜可以有效提高金属表面的真空击穿阈值。     

氧回旋离子束刻蚀化学气相沉积金刚石膜

利用非对称磁镜场电子回旋共振等离子体产生的氧回旋离子束刻蚀了化学气相沉积金刚石膜,研究了工作气压和磁电加热电压对金刚石样品附近的离子温度和密度的影响,并分析了金刚石膜的刻蚀和机械抛光效果。结果表明:当工作气压为0.03 Pa,磁电加热电压为200 V时,离子温度和密度最大,分别为7.38 eV和 23.81010 cm-3 。在此优化条件下刻蚀金刚石膜4 h后,其表面粗糙度由刻蚀前的3.525 m降为2.512 m,机械抛光15 min后,表面粗糙度降低为0.517 m,即金刚石膜经离子束刻蚀后可显著提高机械抛光效率。     

A Study on the Fornation Process of Cryogenic Flashover Ion Sources

To improve the purity, repetition capability, uniformity, and turn-on delay of conventional intense pulsed ion sources, a cryogenic diode was proposed a few years ago. The diode uses the plasma produced by the flashover of condensed materials on the cryogenic anode surface as an ion source. In connection with this ion source, surface flashover processes of low-temperature materials were studied and the production process of an anode plasma at a low-temperature-type ion source was discussed. Ion beam production from adsorbed materials on a porous alumina ring and condensed materials on the cooled anode was also performed.     

Surface modification of polyethylene film by acrylamide graft and alcoholysis for improvement of antithrombogenicity

To improve antithrombogenicity of polyethylene (PE) films, the films pretreated by Ar plasma were radiated by ultraviolet light to initiate grafting polymerization with acrylamide (AAm) in absence of photo-initiator, then the AAm-grafted PE films (PE-g-AAm) were alcoholized with octadecyl alcohol. Effects of Ar plasma composite parameter (W/FM), pretreated time, AAm monomer concentration, and UV irradiation time on grafting rate were investigated systematically. AAm-grafted PE film and alcoholized PE film (PE-g-SAAm) were characterized by contact angle, X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transfer infrared (ATR-FT-IR) spectroscopy and atomic force microscope (AFM), respectively. The results indicated that the moieties of AAm and stearyl were successively immobilized onto the PE surface. The platelet adhesion experiment showed that antithrombogenicity of the modified PE films was improved in comparison with PE films. The change in antithrombogenicity is attributed to the surface of the modified film in presence of tail-like structure which consists of polyacrylamide as spacer and stearyl as end groups.     

High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices

Deposition of Al-doped ZnO (AZO) films with various film thicknesses on glass substrates was performed to investigate the feasibility of using AZO films as anode electrodes in organic light-emitting devices (OLEDs). The electrical resistivity of the AZO films with a 180-nm thickness was 4.085 × 10⁻² Ω cm, and the average optical transmittance in the visible range was 80.2%. The surface work function for the AZO films, determined from the secondary electron emission coefficients obtained with a focused ion beam, was as high as 4.62 eV. These results indicate that AZO films grown on glass substrates hold promise for potential applications as anode electrodes in high-efficiency OLEDs.     

Investigations of Fast Insulator Surface Flashover in Vacuum

Electrooptical measurements of the electric fields along insulator surfaces have been made, utilizing the Kerr and Pockels effects, to determine the mechanisms associated with fast insulator flashover in vacuum. Data are presented that show the temporal and spatial variations of the surface fields prior to and at flashover for insulator surfaces oriented at 0° and 45° with respect to the applied field. It is found that the surface field near the cathode is enhanced and the field near the anode is reduced during the excitation. The results further show a temporal reduction in the field nonuniformity as flashover is approached. The field collapse associated with flashover occurs very rapidly for 0° surfaces. The field collapse for 45° surfaces begins at the anode and propagates at 0.83 cm/ns towards the cathode. Mechanisms consistent with these experimental measurements are postulated.     

外加电场对铁电薄膜相变的影响

采用热力学非线性理论,研究了外加电场对立方基底Pb(Zr_0.3Ti_0.7)O₃(PZT)铁电薄膜相变的影响.通过数值计算,得到了"失配应变-外加电场"相图,及外加电场与极化强度的关系.当外加电场达到186 kV/cm时,能使生长在SrTiO₃ 基底上PZT铁电薄膜从单斜r相转变为c相.在实验上,采用扫描探针显微镜通过对PZT薄膜施加不同的极化电场来研究了它的电畴翻转.从得到的压电响应相图可以看出,绝大多数的电畴是清晰可 关键词： 铁电薄膜 相变 扫描探针显微镜 失配应变     

Effect of excess Pb on crystallinity and ferroelectric properties of PZT(40/60) films on LaNiO3 coated Si substrates by MOD technique

Pb(Zr_0.4Ti_0.6)O₃ [PZT(40/60)] films were deposited onto LaNiO₃ (LNO) coated Si substrates by metal-organic decomposition (MOD) technique. Excess Pb was incorporated in the film by using excess Pb (2%–15%) in the solution. The crystallinity and ferroelectric properties of PZT films were investigated by using X-ray diffraction (XRD), RT66A test system and HP4194 impedance analyzer, respectively. Rayleigh law was employed to analyze the defect concentration in the films. The results show that all the PZT films show the (1 0 0) preferential orientation with complete perovskite structure except for the 2% film displaying some pyrochlore phase. The (1 0 0) preferential orientation is mainly attributed to LNO bottom electrode, which has the highly (1 0 0) preferential orientation. The 10% film shows the best polarization and dielectric properties. The remnant polarization and coercive field are about 10.1 μC/cm² and 73 kV/cm under an electric field around 330 kV/cm, respectively. And the dielectric constant and dissipation factor are about 656 and 0.022 at a frequency of 1 kHz, respectively. The good ferroelectric properties of the 10% film are mainly attributed to the low defect concentration in the film.