用微量热法研究Zn（Val）Ac2在混合溶液中的稀释／结晶动力学

为了在量热实验中应用Burton Cabrera Frank(BCF)位错理论,设计了Zn(Val)Ac2在水 丙酮混合溶剂 中的稀释/结晶体系.为此,通过实验,首先确定了Zn(Val)Ac2在水 丙酮中稀释/结晶生长的最佳体积比为 1∶10.设计了测定该稀释/结晶生长过程的实验方法和框图,简要推导了该结晶生长过程的动力学方程,认为当 晶体生长过程中的BCF常数a和b远小于结晶生长速率常数k2和k1时,结晶过程即符合BCF理论.用微量热 法测定了反应体系分别在298.15、301.15、304.15和307.15K时的放热量及产热速率,计算得到了各温度下的 结晶生长速率常数k2×10-3和k1×10-3分别为3.60、3.92、4.22、4.47J/s和1.54、2.14、2.53、2.97L/s而相 应的BCF常数a×10-5和b×10-7的值分别为3.09、1.16、2.06、2.99J/s和1.10、0.53、1.03、1.66g/s,远比 k2和k1小,从而证明了该结晶过程符合BCF位错理论,说明在一定条件下,BCF位错理论可应用于微量热实 验中.     

刃位错可以作为晶体生长的台阶源吗?

在回答刃位错是否可以作为晶体生长的台阶源的问题之前,有必要简单回顾一下关于晶体生长机制的某些论点. 晶体(确切地说是晶面)要生长,要求在晶面上存在有生长台阶.对于粗糙面(按照晶体生长的现代理论[1-9],此时该晶面的粗糙化相变温度Tr低于晶体生长温度T),这是不成问题的,因为在它上面有着大量可供生长单元结合在其上的生长坐位(扭折位置,或称半晶体位置).而在平坦面(或称奇异面,对于这类晶面Tr>T)上则缺少这样的生长位置.因而一般需要靠二维成核或螺位错的露头点来提供晶体生长的台阶.所以,二维核和螺位错可以充当晶体生长的台阶源. 最…     

晶体生长的缺陷机制

晶体生长是一个复杂的相变过程。自80年代以来,闵乃本及其研究组系统地研究了晶体生长的缺陷机制。在理论分析和实验观察的基础上,他们发展了晶体生长的位错机制（包括刃位错和混合位错机制）,层错机制,孪晶机制、重入角机制以及重入角生长和粗糙界面生长的协同机制。根据这些机制可以得出结论：任何可以在晶体生长表面提供台阶源的缺陷都能为晶体生长作出贡献,这些台阶源包括完全台阶和不完全台阶（亚台阶）,近年来,P.Bennema及其合作者系统地研究了在照相工业中广泛应用的卤化银和金属银的晶体生长机理,在大量实验事实和理论分析的基础上,他们认为亚台阶理论（称作闵氏理论）不仅可适用于溶液生长,也适用于气相生长的机理研究;不仅适于作理论分析,而且可用于寻求最佳生产条件的指导,亚台阶理论是晶体生长的一个普适理论,文章介绍了闵乃本及其研究组提出理论及P.Bennema研究组近年来在这方面的工作进展。     

“干涉逼近法”测量液体折射率

提出了一种高精度测量液体折射率的新方法一“干涉逼近法”.这种方法可以在测量过程中监视被测液体温度不均匀性给测量带来的误差.由于受温度测量的限制,其测量液体折射率的不确定度在1×10~(-6)到4×10~(-5)(2σ)之间,具体值取决于液体折射率的温度系数.     

K(5P)与H2的反应碰撞和电子-振动能量转移

K(5P)与H2反应生成KH(v′′=0-3)振动态,测量了各振动态的转动分布,转动玻尔兹曼温度为455K,而振动温度为1604K,这个接近池温的转动温度和很高的振动温度是共线碰撞机制的有力证据.利用高分辨率瞬时吸收技术得到各振动能级上转动态的布居分布,从而得到反应碰撞转移速率系数,对于v′′=0、1、2、3,分布别为(3.45±0.86)×10-13、(1.35±0.34)×10-13、(6.28±1.57)×10-14和(2.35±0.59)×10-14cm3s-1. 同时研究了K(5P)-H2的电子-振动能量转移,利用相干反斯托克斯拉曼散射（CARS）探测H2的振动态分布.扫描CARS谱发现v=1、2、3上有布居. 由CARS峰值得到H2（0,1）、（1,1）、（2,1）、（3,1）和（3,3）布居之比. H2(0,1)布居由450K的转动分布得到,因而得到（1,1）、（2,1）、（3,1）和（3,3）态的布居,从而获得K(5P)-H2(1,1)、（2,1）、（3,1）和（3,3）的电子-振转速率系数分别是（1.1±0.3）×10-13、（9.3±2.5）×10-14、（4.2±1.1）×10-14和（3.8±1.0）×10-14cm3s-1.     

光纤Bragg光栅热敏力敏效应研究及应用探讨

本文报道了光纤Bragg光栅热敏力敏效应的实验研究结果,测量所得的光纤Bragg光栅温度系数和应力系数分别为6.84×10^-6/℃和7.27×10^-6/gf,与理论值6.85×10^-6/℃和7.32×10^-6/gf符合得很好.在20～180℃和0～50gf的温度应力测量范围内,光纤Bragg光栅透射谱中心波长移动量同温度应力具有良好的线性关系.基于光纤Bragg光栅的热敏力敏效应,本文还讨论了光纤Bragg光栅温度应变传感器实用化时必须首先考虑的一些关键问题.     

ADP晶体相变界面微观形貌及其推移的实时AFM研究

运用原子力显微术AFM (atomic force microscopy, AFM)观察了ADP晶体生长时相界面上动态微观形貌的变化并测算了台阶传播速率.实验结果表明,在相变驱动力介于0.005～0.05κT/ωs,生长温度介于20～40℃之间时,相变界面表现出台阶面的基本特征;相变界面上台阶推移的动力学系数体现出溶质输运趋向于体扩散控制;微晶融合的过程说明ADP晶体生长中,微晶融入与大分子晶体的同类过程有所不同,不会形成晶体缺陷.     

铁电体KDP软模时间分辨的冲击受激拉曼散射

利用飞秒脉冲激光在时域内对铁电体KDP(KH2 PO4 )进行冲击受激拉曼散射 (ISRS)实验研究 ,在激发光束夹角θ=0 .38°情况下 ,发现了KDP软模与光耦合所形成的电磁耦合波子弱衰减低频振荡的冲击受激拉曼散射响应信号 ,其周期随着温度接近相变温度Tc 而逐渐增大 ,其特性可用铁电体软模在Tc 温度附近频率的变化规律ω2 =α0 (T -Tc)来描述 ,这里系数α0 ≈ 16× 10 2 0 s2 K- 1 。     

Cs(8S -4F)-Ar，H2的碰撞能量转移

利用脉冲激光器双光子激发Cs-H2（或Ar）样品池中的Cs原子至8S态,研究了Cs(8S)+M→Cs(4F)+M ,(M= H2,Ar)碰撞能量转移和Cs(4F)+H2→CsH+H反应过程,建立了二能级模型的速率方程组。在不同的Ar密度下测量直接8S→6P与敏化4F→5D积分荧光强度比,得到8S→4F转移速率系数5.3×10-12cm3s-1和4F态的猝灭速率系数4.4×10-13cm3s-1。用相同的方法测得Cs－H2中8S→4F的转移速率系数为1.0×10-9cm3s-1,而4F态的猝灭速率系数1.3×10-10cm3s-1比Cs－Ar中大得多,它是反应与非反应速率系数之和。利用实验数据确定非反应速率系数为8.3×10-11cm3s-1,得出Cs（4F）与H2的反应截面为(2.0±0.8)×10-16cm3s-1。与已有的其它实验结果比较,Cs各激发态与H2的反应活动性顺序为7P>4F>6D>8S。     

掺半导体玻璃(SDG)波导非线性饱和的导波测量方法

掺半导体玻璃波导的折射率分布是通过多模波导有效折射率测量得到的.当耦合进入波导的激光功率密度变化时,可在不同模深度处,测量到波导的非线性折射率系数,并获得波导非线性折射率系数与功率密度的关系.从而得到波导的非线性饱和值为1.54×10-4.     

硫酸盐对KDP晶体质量的影响

 利用“点籽晶”快速生长技术生长了掺杂硫酸钾（K₂SO₄）的磷酸二氢钾（KDP）晶体，并对硫酸根类杂质离子对晶体的结构及光学质量的影响进行了研究。结果表明：在掺杂相对含量为50×10^-6条件下，K₂SO₄开始对KDP晶体产生一定影响，主要表现在不同扇形区域的结构略有改变，其原因主要在于硫酸根与KDP晶体各扇形结构有关；杂质粒子对晶体透过率、单轴性没有明显影响，但是热膨胀系数增大，光损伤阈值略有降低。     

Boron diffusion in bcc-Fe studied by first-principles calculations

The diffusion mechanism of boron in bcc-Fe has been studied by first-principles calculations. The diffusion coefficients of the interstitial mechanism, the B–monovacancy complex mechanism, and the B–divacancy complex mechanism have been calculated. The calculated diffusion coefficient of the interstitial mechanism is D_0= 1.05 ×10~(-7)exp(-0.75 e V/k T) m~2· s~(-1), while the diffusion coefficients of the B–monovacancy and the B–divacancy complex mechanisms are D_1= 1.22 × 10~(-6)f1exp(-2.27 e V/k T) m~2· s~(-1)and D_2≈ 8.36 × 10~(-6)exp(-4.81 e V/k T) m~2· s~(-1), respectively. The results indicate that the dominant diffusion mechanism in bcc-Fe is the interstitial mechanism through an octahedral interstitial site instead of the complex mechanism. The calculated diffusion coefficient is in accordance with the reported experiment results measured in Fe–3%Si–B alloy(bcc structure). Since the non-equilibrium segregation of boron is based on the diffusion of the complexes as suggested by the theory, our calculation reasonably explains why the non-equilibrium segregation of boron is not observed in bcc-Fe in experiments.     

Structural,optical, thermal and mechanical characterization of an organic nonlinear optical material: 4-methyl-3-nitrobenzoic acid single crystal

Organic single crystals of 4-methyl-3-nitrobenzoic acid (4M3N) have been grown by slow evaporation solution growth technique at room temperature. The single crystal X-ray diffraction study reveals that 4M3N crystallizes in monoclinic system with space group P21/n. The crystalline perfection of the crystal was analyzed by high resolution X-ray diffraction (HRXRD) measurements. The functional groups present in 4M3N have been identified from FT-IR and FT-Raman spectra. The lower cut-off wavelength of 4M3N is found to be 404 nm and the optical band gap is calculated as 2.91 eV. The refractive index shows normal behavior with wavelength. The physio chemical changes, decomposition and stability of the 4M3N compound were established by TG-DTA studies. Vickers microhardness measurement concludes that 4M3N belongs to soft material (n=2.5) category. The LDT value is found to be higher than that of KDP and some of the important organic NLO materials. The third order nonlinear refractive index and nonlinear absorption coefficient of the 4M3N have been measured by Z-scan studies. The imaginary and real parts of the third-order susceptibility values were determined as Im χ³=9.129×10⁻¹¹ esu and Re χ³=1.4034×10⁻⁹ esu respectively. The dislocation density was calculated to be 3.0448×10⁶ cm⁻² which indicates the quality of the crystal.     

YBCO熔融织构准单晶中的进氧和脱氧扩散研究

采用热重法研究了YBCO熔融织构准单晶中氧的化学扩散过程. 与以往的实验不同，采用固定 氧偏压变化温度的方法获得氧浓度梯度. 拟合实验所得重量等温弛豫曲线可知，在375—600 ℃温区内，熔融织构准单晶的氧化学扩散系数比单晶体高出约50％，但都约为10^{-10c m2s-1，激活能为～1eV. 对YBCO熔融织构准单晶中的进氧和脱氧研 究表 明两者具有相同的速率，证实实验过程中环境氧分压的改变会导致进氧和脱氧过程不一致. 关键词： 高温超导 氧扩散 熔融织构 热重法}     

Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate

The influence of the LT-AlN(NL) growth times on the mosaic structure parameters of the AlN layer grown on the LT-AlN(NL)/6H-SiC structures as well as the dislocation densities and the strain behaviours in the AlN epilayers has been investigated using XRD measurements. The growth times of the LT-AlN(NL) were changed to 0, 60, 120, 180, and 240?s. We observed that the mosaic structure parameters of the AlN epilayers were slightly affected by the LT-AlN(NL) growth times. However, the dislocation densities in the AlN layer are affected by the growth times of the LT-AlN(NL) layer. The highest edge dislocation density (5.48?×?10¹⁰?±?2.3?×?10⁹?cm^?2) was measured for the sample in which 120?s grown LT-AlN(NL) was used. On the other hand, highest screw type dislocation density (1.21?×?10¹⁰?±?1.7?×?10⁹?cm^?2) measured in the sample E that contains 240?s growth LT-AlN(NL). The strain calculation results show that the samples without LT-AlN(NL) suffered maximum compressive in-plane strain (?10.9?×?10^?3?±?1.8?×?10^?4), which can be suppressed by increasing the LT-AlN(NL) growth times. The out-of-plane strain also has a compressive character and its values increase with LT-AlN(NL) growth times between 60 and 180?s. Same out-of-plane strain values were measured for the LT-AlN(NL) growth times of 180 and 240?s. Furthermore, the form of the biaxial stress in the AlN epilayer changed from compressive to tensile when the LT-AlN(NL) growth times were greater than 120?s.     

Raman gains of ADP and KDP crystals

In this paper, the Raman gain coefficients of ammonium dihydrogen phosphate(ADP) and potassium dihydrogen phosphate(KDP) crystals are measured. By using a pump source of a 30-ps, 532-nm laser, the gain coefficients of ADP and KDP are 1.22 cm/GW, and 0.91 cm/GW, respectively. While for a 20-ps, 355-nm pump laser, the gain coefficients of these two crystals are similar, which are 1.95 cm/GW for ADP and 1.86 for KDP. The present results indicate that for ultra-violet frequency conversion, the problem of stimulated Raman scattering for ADP crystal will not be more serious than that for KDP crystal. Considering other advantages such the larger nonlinear optical coefficient, higher laser damage threshold,and lower noncritical phase-matching temperature, it can be anticipated that ADP will be a powerful competitor to KDP in large aperture, high energy third-harmonic generation or fourth-harmonic generation applications.     

新型光学晶体KABO的非线性频率变换特性

简述了新型非线性晶体KABO的光学特性.根据相位匹配角公式、非线性有效系数公式、走离角公式和允许角公式,详细计算了KABO晶体倍频时的相位匹配角、非线性有效系数、倍频时谐波走离角、允许角随波长变化的理论曲线.特别是对LD泵浦掺钕的全固态激光器532 nm输出时,得到了KABO晶体采用I类相位匹配进行四倍频的相位匹配角、非线性有效系数、倍频时谐波走离角、允许角分别为:58.1°、0.254×10^-12m/V、2.8°、1.8233 mrad·mm;并将该晶体与目前可应用于紫外倍频的晶体比较,在考虑走离效应的情况下,研究了四倍频转换效率随KABO晶体长度、基频光光斑半径的变化规律.     

A measurement of surface diffusion across steps on a curved surface (Pd on W)

The surface diffusion of palladium on the curved part of a tungsten crystal is studied by field electron microscopy. The variation of the local coverage distribution is measured by a probe-hole device on the stepped surface region around (001). The measured data allow a determination of the mass transport surface diffusion coefficient D of Pd on W across atomic steps as a function of temperature, coverage and step density. D has been found (1) to be constant for a given step density and for coverages lower than about 5 × 10¹⁴ Pd adatoms/cm², (2) to increase for higher coverages, and (3) to increase with increasing step density for a given coverage. The activation energy of the process is nearly constant (about 24 kcal/mol) for all coverages up to about 6 × 10¹⁴ adatoms/cm², while the pre-exponential factor of D increases with increasing step density. Interpretation of the results gives some information on the diffusion mechanism.     

Surface Diffusion Induced Growth of Solid Solution over a Free Crystal Surface

It has been shown that interdiffusion along a free vicinal crystal surface can lead, at comparably low temperatures, to layered growth of solid solution over the surface without the involvement of bulk diffusion. The alloy concentration distribution along the surface, as well as the normal rate of solution growth has been calculated. The formation of a layer of the solid solution has been experimentally observed on a vicinal (111) surface of Ni single crystal as a result of surface interdiffusion between Ni and a thin film of Au deposited on a part of the Ni surface. The surface diffusion coefficients, as well as other parameters responsible for the exchange rate between the adatoms and kinks of elementary steps have been measured in the temperature range 550–700°C.     

Characterization of crystal growth using a spiral nucleation model

Classical concepts of two-dimensional nucleation and spiral growth are used together with recent findings on the dynamics of dislocation spirals to derive a new crystal growth model. Initial growth nuclei result from the organization of adsorbed molecules in spirals around surface dislocations. The energetic barrier for the activation of the spiral nuclei is considerably lower than the admitted by classical two dimensional nucleation models. Stable nuclei evolve into bigger growth hillocks in supersaturated media through the incorporation of adsorbed units into their steps. The displacement velocity of steps during solution and vapour growth is calculated by different kinetic approaches, taking into consideration the distinct role of surface diffusion in each process, and avoiding known limitations of conventional theories. A generalized expression is obtained relating the crystal growth rate with main variables such as supersaturation, temperature, crystal size, surface topology and interfacial properties. At the end of the paper, the crystallization kinetics of sucrose measured at 40 °C is interpreted in the light of the new perspectives resulting from the proposed model. The application example illustrates how to estimate interfacial and topological properties from the experimental crystal growth results.