Critical current densities of high pressure oxygen sputtered thin films of YBa2Cu3O7−x by non-resonant rf absorption method

The critical current densities (J _c) have been measured at 77K in high pressure oxygen sputtered thin films of YBa₂Cu₃O_7−x superconductor using the non-resonant rf absorption technique. High values ofJ _c (∼ 10⁵ A/cm²) are observed in these relatively large area (∼ 1·2 cm²) films.     

Pulsed laser deposition of Zr–N codoped <Emphasis Type="Italic">p</Emphasis>-type ZnO thin films

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N₂O background pressures between 10⁻⁵ to 10⁻² Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N₂O deposition pressure. P-type conduction was observed for films grown at pressures between 10⁻³ to 10⁻² Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10⁻³ Torr of N₂O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×10¹⁸ cm⁻³, and a Hall mobility of 1.4 cm² V⁻¹ s⁻¹. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films.     

Magnetic aftereffects in nickel ferrites

We have studied the magnetic aftereffects in the Ni _x Fe_3−x−ΔO₄ system, for 0≦x≦1 and 10⁻⁵≦Δ≦2×10⁻¹, between 80 and 500 K. The samples were obtained by sintering at 1400°C in an appropriate gas atmosphere. The measurements are based on the deviation from equilibrium that is produced in a Maxwell-Wien bridge when the self-induction of a coil with ferrite core varies because of the phenomenon of magnetic aftereffects. The numerical analysis of the results shows the presence of relaxation processes at 300 K (III), 330 K (IIa), and above 500 K (I). The Processes III and IIa are related to the concentration of nickel,x, and of vacancy, Δ. It is seen that the IIa peak can be attributed to a process of diffusion of Ni ions in the spinel lattice by means of vacancies on octahedral sites.     

Structural and electrical characterisation of strontium zirconate proton conductor co-sputter deposited coatings

SrZr_1−x Y _x O₃ coatings were co-sputtered from metallic Zr–Y (84–16 at.%) and Sr targets in the presence of a reactive argon–oxygen gas mixture. The structural and chemical features of the film have been assessed by X-ray diffraction and scanning electron microscopy. The electrical properties have been investigated for different substrates by Complex Impedance Spectroscopy as a function of crystalline state, temperature and atmosphere. The as-deposited coatings are amorphous and crystallise after annealing at 673 K for 2 h under air. The stabilisation of the perovskite structure is a function of the nominal composition. The films are dense and present a good adhesion on different substrates. Crystallisation and mechanical stresses are detected by alternating current (AC) impedance spectroscopy. Significant ionic conductivity in the 473–823 K temperature range is evidenced in air. Two different conduction regimes in the presence of steam are attributed to a modification of the charge carrier nature. In spite of low conductivity values (σ ~10⁻⁶ S.cm⁻¹ at 881 K), the activation energies are in agreement with that of Y-doped strontium zirconate ceramics (~0.7 eV in air).     

Preparation and electrical conductivity of LISICON thin films

LISICON thin films have been prepared with RF sputtering and subsequent heat-treatment. The crystal phases of sputtered films depend on the sputtering conditions, especially the target composition and ambient gas atmosphere. Though the as-sputtered films in Ar-O₂ mixed gas (target composition: Li₃Zn_0.5GeO₄+0.5 ZnO, gas pressure: 9×10^-2 Torr, oxygen gas content: 74.6%) were amorphous; LISICON single phase thin films were obtained after annealing at 600°C for 6 h. The conductivity of the film at 500°C is 5×10^-3ω^-1cm^-1 which is slightly lower than that for ceramic Li₃Zn_0.5GeO₄.     

Polarisation conductivity of the O2,Pt/Zr(Y)O2 and H2-H2O, Pt/Zr(Y)O2 electrodes

Pt electrodes with defined contact geometries were studied by using impedance spectroscopy. The specific polarisation conductivity per unit length of the three-phase boundary was determined. It is found to be 1 × 10⁻⁴ S·cm⁻¹ at 977 °C in an atmosphere of “pure” hydrogen with an oxygen partial pressure of 10⁻²⁰ atm at 1000 °C. Investigations carried out in an atmosphere of pure oxygen revealed a pronounced dependence of the polarisation conductivity on the electrode history. The polarisation conductivity was found to be in a range of 2 × 10⁻⁴ to 6.5 × 10⁻⁴ S·cm⁻¹ at a temperature of 977 °C. It was possible to estimate the area of the electrolyte surface which takes part in the electrode reaction. The real exchange current density was determined.     

Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents

Thermally stimulated current (TSC) measurements performed in the 100 K–400 K temperature range on Bi₄Ti₃O₁₂ (BiT) thin films annealed at 550 °C and 700 °C had revealed two trapping levels having activation energies of 0.55 eV and 0.6 eV. The total trap concentration was estimated at 10¹⁵ cm⁻³ for the samples annealed at 550 °C and 3×10¹⁵ cm⁻³ for a 700 °C annealing and the trap capture cross-section was estimated about 10⁻¹⁸ cm². From the temperature dependence of the dark current in the temperature range 20 °C–120 °C the conduction mechanism activation energy was found to be about 0.956–0.978 eV. The electrical conductivity depends not only on the sample annealing temperature but also whether the measurement is performed in vacuum or air. The results on the dark conductivity are discussed considering the influence of oxygen atoms and oxygen vacancies. Received: 28 January 1998 / Accepted: 8 January 1999 / Published online: 5 May 1999     

Investigations of electronic minority charge carrier conductivity in La0.9Sr0.1Ga0.8Mg0.2O2.85

The perovskite structured material LaGaO₃ doped with 10 mol-% strontium and 20 mol-% magnesium was prepared by two different wet-chemical synthesis routes. The total conductivity was measured in air and under an oxygen partial pressure of 10⁻²⁰ bar. There was a decrease by 10 % in 4 days when the atmosphere was changed from air to 10⁻²⁰ bar. This process is reversible. Hebb-Wagner measurements resulted in values for the electronic minority charge carrier conductivities in pure oxygen of log σ_h [S/cm]=−4.02 and log σ_e [S/cm]=−15.5 for the holes and electrons, respectively, at 600 °C. In the partial pressure range 10⁻³ bar≤p(O₂)≤1 bar, a slope of +1/4 was observed for d(log (σ_h)) / d(log (p(O₂)) at T=600, 650 and 700 °C. That is in agreement with the assumption of a large number of oxygen vacancies. The diffusion coefficient of the holes was evaluated from the relaxation curves to be 1.1*10⁻⁷ cm²/s at 600 °C. Degradation effects were observed under highly reducing conditions which are attributed to the formation of gallium-platinum alloys and the loss of gallium oxide if O₂ is available in the gas phase. Paper presented at the 6th Euroconference on Solid State Ionics, Cetraro, Calabria, Italy, Sept. 12–19, 1999.     

The growth of Y2SiO5:Ce thin films with pulsed laser deposition

Y₂SiO₅:Ce phosphor thin films were grown onto Si(100) substrates with pulsed laser deposition (PLD) using a 248-nm KrF excimer laser. Process parameters were varied during the growth process and the effect on the surface morphology and cathodoluminescence (CL) was analysed. The process parameters that were changed included the following: gas pressure (vacuum (5×10⁻⁶ Torr), 1×1⁻² Torr and 1 Torr O₂), different gas species (O₂, Ar and N₂ at a pressure of 455 mTorr), laser fluence (1.6±0.1 J cm⁻² and 3.0±0.3 J cm⁻²) and substrate temperature (400 and 600°C). The surface morphology was investigated with atomic force microscopy (AFM). The morphology of the thin films ablated in vacuum and 10 mTorr ambient O₂ showed more or less the same trend. An increase in the pressure to 1 Torr O₂, however, showed a definite increase in deposited particle sizes. Ablation in N₂ gas resulted in small particles of 20 nm in diameter and ablation in O₂ gas produced bigger particles of 20, 30 and 40 nm as well as an agglomeration of these particles into bigger size clusters of 80 to 100 nm. Ablation in Ar gas led to particle sizes of 30 nm and the particles were much more spherically defined and evenly distributed on the surface. The higher fluence deposition led to bigger particle and grain sizes as well as thicker layers with respect to the lower fluence. The particle sizes of the higher fluence vary mainly between 130 and 140 nm and the lower fluence sizes vary between 50 and 60 nm. The higher fluence particles consist of smaller particles ranging from 5 to 30 nm as measured with AFM. The surface structure of the thin film ablated at 400°C substrate temperature is less compact (lesser agglomeration of particles than at 600°C). The increase in substrate temperature definitely resulted in a rougher surface layer. CL was measured to investigate the effect of the surface morphology on the luminescent intensities. The increased O₂ ambient (1 Torr) resulted in a higher CL intensity compared to the thin films ablated in vacuum. The thin film ablated in Ar gas showed a much higher CL intensity than the other thin films. Ablation at a high fluence resulted in a higher CL intensity. The higher substrate temperature resulted in better CL intensities. The more spherically shaped particles and rougher surface led to increase CL intensities.     

SnO2 thin films grown by pulsed Nd:YAG laser deposition

SnO₂ thin films have been deposited on glass substrates by pulsed Nd:YAG laser at different oxygen pressures, and the effects of oxygen pressure on the physical properties of SnO₂ films have been investigated. The films were deposited at substrate temperature of 500°C in oxygen partial pressure between 5.0 and 125 mTorr. The thin films deposited between 5.0 to 50 mTorr showed evidence of diffraction peaks, but increasing the oxygen pressure up to 100 mTorr, three diffraction peaks (110), (101) and (211) were observed containing the SnO₂ tetragonal structure. The electrical resistivity was very sensitive to the oxygen pressure. At 100 mTorr the films showed electrical resistivity of 4×10⁻² Ω cm, free carrier density of 1.03×10¹⁹ cm⁻³, mobility of 10.26 cm² V⁻¹ s⁻¹ with average visible transmittance of ∼87%, and optical band gap of 3.6 eV.     

Superconductivity of thin films of lead,indium, and tin prepared in the presence of oxygen

We have studied the influence of oxygen on the superconducting properties of thin films of lead, indium and tin deposited on glass or sapphire substrates. In addition, the morphological microstructure was investigated by scanning electron microscopy. The film thickness was 1.0 μm, and the partial pressure of O₂ during the film deposition was raised up to 1×10⁻⁴ Torr. In all three materials the development of a granular structure and a strong increase in the residual electric resistivity was observed due to the O₂-treatment. Whereas in the Pb films no change of the critical temperature was found, the In films deposited on glass substrates showed a slight increase ofT _c due to the oxygen. The strongest increase ofT _c (up to 8%) was observed in the O₂-treated Sn films. These results are discussed in terms of the McMillan theory. From our measurements of the critical current densityj _c we conclude that edge pinning is dominant in the undoped films. All three materials showed a strong increase ofj _c due to the O₂-treatment which must be interpreted in terms of bulk pinning.     

Polyaniline-poly(vinyl alcohol) IPN-composite prepared from potassium dichromate embedded PVA film: a material for humidity sensing application

Polyaniline-polyvinyl alcohol (PANI-PVA) interpenetrating network composite film is successfully prepared by in situ polymerization of aniline within PVA film embedded with different concentrations of potassium dichromate (K₂Cr₂O₇). The resulted composite is characterized by UV-Visible spectroscopy, SEM and XRD, TGA techniques and confirmed the formation of interpenetrating network formation of PANI within PVA matrix. Electrical conductivity of the composite films increase from 10⁻⁶ to 10⁻² S/cm with the increase in the loading of dichromate from 10⁻⁴ to 10⁻² M. Further, exposing in humidity environment, the conductivity of the composite films increases from 14 to 100% with the increase in humidity conditions from 11.3 to 84.3%.     

Thermomechanical and conductivity studies of doped niobium titanates as possible current collector material in the SOFC anode

In the reducing atmosphere of the SOFC anode at operating temperatures of 800 °C and above Nb₂TiO₇ is reduced to Nb_1.33Ti_0.67O₄. This material displays very high electronic conductivity of >100 Scm⁻¹, suitable for use in such applications as a current collector. It has a low thermal expansion coefficient of 3 × 10⁻⁶ K⁻¹, however, which may cause problems due to mismatch with other SOFC components, e.g. YSZ. Doping with Fe₂O₃ successfully increased the thermal expansion to a maximum of 6 × 10⁻⁶ K⁻¹. A conductivity of 140 Scm⁻¹ at 900 °C in dry 5% H₂/Ar, with an activation energy of 0.18 eV, was achieved for the Nb_1.344Ti_0.642Fe_0.014O₄, making it suitable for the use as a current collector. Conductivity runs in wet 5%H₂/Ar showed lower conductivities of 15–18 Scm⁻¹ and lower activation energies of 0.08 − 0.09 eV. Single cell tests of Nb_1.33Ti_0.67O₄ showed power outputs of 5.5 − 7.2 mW·cm⁻² at 850 °C, lower than for Ni with 150 − 200 mW·cm⁻² at 850 °C, however, this material displayed much better stability at high temperatures than Ni. Paper presented at the 9th EuroConference on Ionics, Ixia, Rhodes, Greece, Sept. 15 – 21, 2002.     

Structural and transport properties of cubic spinel ZnCo2O4 thin films grown by reactive magnetron sputtering

We report on the growth of cubic spinel ZnCo₂O₄ thin films by reactive magnetron sputtering and bipolarity of their conduction type by tuning of oxygen partial pressure ratio in the sputtering gas mixture. Crystal structure of zinc cobalt oxide films sputtered in an oxygen partial pressure ratio of 90% was found to change from wurtzite Zn_1−xCo_xO to spinel ZnCo₂O₄ with an increase of the sputtering power ratio between the Co and Zn metal targets, D_Co/D_Zn, from 0.1 to 2.2. For a fixed D_Co/D_Zn of 2.0 yielding single-phase spinel ZnCo₂O₄ films, the conduction type was found to be dependent on the oxygen partial pressure ratio: n-type and p-type for the oxygen partial pressure ratio below ∼70% and above ∼85%, respectively. The electron and hole concentrations for the ZnCo₂O₄ films at 300 K were as high as 1.37×10²⁰ and 2.81×10²⁰ cm⁻³, respectively, with a mobility of more than 0.2 cm²/V s and a conductivity of more than 1.8 S cm⁻¹.     

High-temperature electrical transport in Al-doped calcium and strontium titanates

The electrical conductivity of perovskite-related oxides CaTi_1−xAl_xO_3−δ and SrTi_1−xAl_xO_3−δ (x=0−0.4) were investigated within the temperature range 900 to 1000 °C and the oxygen partial pressure range between 10⁻²⁰ and 0.21 atm using a dc four-point technique. The materials investigated show predominantly p-type electronic conductivity at high, n-type electronic conductivity at low, and ionic conductivity at intermediate oxygen partial pressures. The values of ionic conductivity in CaTi_1−xAl_xO_3−δ were found to be lower than those in CaTi_1−xFe_xO_3−δ. The effect of aluminium concentration on the high-temperature transport properties was examined. Paper presented at the 9th EuroConference on Ionics, Ixia, Rhodes, Greece, Sept. 15 – 21, 2002.     

Interaction of muonium with oxygen on silica powder surfaces

Results of the first μSR studies using Merck FO Optipur silica powder, which contains paramagnetic impurities at the ppb level and has a surface area of 610±20 m²/g. are reported. Above 20 K, the transverse field muonium relaxation rate is roughly constant at 0.5 μs⁻¹. Upon the addition of oxygen at ppm levels, the relaxation rate increases linearly with O₂ concentration in the temperature range from 40–100 K yielding two-dimensional depolarization rate constants on the order of 10⁻⁴ cm² molecule⁻¹ s⁻¹. As the temperature is increased further, both oxygen and muonium desorb from the surface yielding a three-dimensional rate constants at 300 K of 3.1(3)×10–10⁻¹⁰ cm³ molecule⁻¹ s⁻¹, in agreement with the gas phase value. Longitudinal field measurements suggest that MuO₂ is formed and is able to spin exchange with other oxygen molecules.     

Electric conductivity of siliconorganic polyhomoconjugated polymer films upon adsorption of volatile organic compounds

The electrophysical parameters of polyhomoconjugated organosilicon polymer films are studied, and variation of their conductivity under the action of water, toluene, and ammonia vapors is measured. Films 1–2 μm thick are prepared by the casting method from a solution of poly[2,2-dimethyl-2-sila-1,3-propylene-(4, 4′-biphenylene)]a (polymer I) and poly[2-n -butyl-2-phenyl-2-sila-1,3-propylene-(4, 4′-biphenylene)]a (polymer II). In the course of conductivity measurement, organic volatiles and water are adsorbed due to a stepwise rise in the pressure over the sample from 10⁻³ to 10⁻¹ Torr. The initial values of the resistivity of polymers I and II are estimated as 4 × 10⁹ Θ cm. Exposure of the films to organic volatile vapors and water vapor causes a reversible change in the conductivity of the films. For polymer-I films, the conductivity upon adsorption of ammonia, toluene, and water vapors exceeds the initial value by 150, 10, and 600 times, respectively. The sensitivity of polymer-II films is lower by a factor of 1.5–2.0. The time of conductivity variation as the vapors are injected and evacuated is within 10 and 30 s, respectively. The mechanisms of organic volatile and water adsorption on the surface of polyhomoconjugated organosilicon polymer films are compared with adsorption mechanisms on the surface of π-polyconjugated organic films.     

Fast ionic conduction in cubic hafnium garnet Li<Subscript>7</Subscript>La<Subscript>3</Subscript>Hf<Subscript>2</Subscript>O<Subscript>12</Subscript>

A new member of the family of garnets with fast lithium ion conduction has been found with the composition Li₇La₃Hf₂O₁₂. The anion arrangement corresponds to the oxygen framework in garnets, e.g., in Ca₃Fe₂Si₃O₁₂. Hafnium is coordinated octahedrally while the lanthanum environment can be described as a distorted cube. Lithium occupies a large number of positions with tetrahedral, trigonal planar, and metaprismatic coordination. Li₇La₃Hf₂O₁₂ shows a lithium bulk ion conductivity of 2.4 × 10⁻⁴ Ω⁻¹ cm⁻¹ at room temperature with an activation energy of 0.29 eV.     

Structure property correlation in lithium borophosphate glasses

To investigate the influence of cation mobility variation due to the mixed glass former effect, 0.45Li₂O-(0.55 − x) P₂O₅−x B₂O₃ glasses (0 ≤; x ≤ 0.55) are studied keeping the molar ratio of Li₂O/(P₂O₅ + B₂O₃) constant. Addition of B₂O₃ into lithium phosphate glasses increases the glass transition temperature (T _g) and number density, decreases the molar volume, and generally renders the glasses more fragile. The glass system has been characterised experimentally by XRD, XPS and impedance studies and studied computationally by constant volume molecular dynamics (MD) simulations and bond valence (BV) method to identify the structural variation with increasing the B₂O₃ content, its consequence for Li⁺ ion mobility, as well as the distribution of bridging and non-bridging oxygen atoms. These studies indicate the increase of P-O-B bonds (up to Y = [B₂O₃]/([B₂O₃] + [P₂O₅]) ≈ 0.5 and B-O-B bonds, as well as the decrease of P-O-P bonds and non-bridging oxygens (NBOs) with rising B₂O₃ content. The system with Y ≈ 0.5 exhibits maximum ionic conductivity, 1.0 × 10⁻⁷ S cm⁻¹, with activation energy 0.63 V. Findings are rationalised by a model of structure evolution with varying B₂O₃ content Y and an empirical model quantifying the effect of the various structural building blocks on the ionic conductivity in this mixed glass former system.     

The rate constants of singlet oxygen collision-induced emission at 634 and 703 nm wavelengths

Absolute spectral luminosity from an O₂–O₂(a)-H₂O gas flow formed by a chemical singlet oxygen generator was measured at 600–800 and 1230–1310 nm wavelengths. The results were used to determine the rate constants for O₂(a, 0) + O₂(a, 0) → O₂(X, 0) + O₂(X, 0) + hν (λ = 634 nm) and O₂(a, 0) + O₂(a, 0) → O₂(X, 1) + O₂(X, 0) + hν (λ = 703 nm) collision-induced emission ((6.72 ± 0.8) × 10⁻²³ and (7.17 ± 0.8) × 10⁻²³ cm³/s, respectively).