Preparation and electrical conductivity of LISICON thin films

LISICON thin films have been prepared with RF sputtering and subsequent heat-treatment. The crystal phases of sputtered films depend on the sputtering conditions, especially the target composition and ambient gas atmosphere. Though the as-sputtered films in Ar-O₂ mixed gas (target composition: Li₃Zn_0.5GeO₄+0.5 ZnO, gas pressure: 9×10^-2 Torr, oxygen gas content: 74.6%) were amorphous; LISICON single phase thin films were obtained after annealing at 600°C for 6 h. The conductivity of the film at 500°C is 5×10^-3ω^-1cm^-1 which is slightly lower than that for ceramic Li₃Zn_0.5GeO₄.