由混合激发钠分子—原子系统产生的强度振荡变化的红外受激喇曼散射

本文报道以等频二步激发钠分子-原子系统,观测到强度随泵浦光的调谐而呈振荡变化的3P—4P受激喇曼散射,以及对应4D—4P和4F—3D跃迁的红外受激辐射和由四波混频产生的816.8～822.1nm区内可调谐相干辐射。文中对这些过程进行了分析讨论。     

由双光子共振激发钾蒸气产生红外受激辐射以及紫外和可见相干辐射

当双光子共振激发钾原子到7S能级时,测得了一系列位于红外区的光泵受激辐射和串级受激辐射.由光泵受激辐射与泵浦光的双光子共振四波混频过程,产生了对应于6P-4S和5P-4S的强相干辐射.而这两个相干辐射又具有泵浦光的作用,通过接联的四波混频过程产生位于紫外和可见区的许多相干辐射.文中对测到的红外受激辐射以及紫外和可见相干辐射的产生过程进行了讨论.     

Sr3B2O6∶Tb3+,Li+绿色荧光粉的发光特性

用高温固相法合成了Sr3B2O6∶Tb3 ,Li 绿色荧光粉,并研究粉体的发光性质。发射光谱由位于黄绿区的4个主要荧光发射峰组成,峰值分别位于495,548,598,625nm,对应了Tb3 的5D4→7F6,5D4→7F5,5D4→7F4和5D4→7F3特征跃迁发射,548nm的发射最强。激发光谱表现从200~400nm的宽带,可以被近紫外光辐射二极管(near-ultraviolet light-emitting diodes,UVLED)管芯产生的350~410nm辐射有效激发。研究了Tb3 掺杂和电荷补偿剂对样品发光亮度的影响。Sr3B2O6∶Tb3 ,Li 是一种适用于白光LED的绿色荧光粉。     

Sr3B2O6：Tb^3＋，Li^＋绿色荧光粉的发光特性

用高温固相法合成了Sr3B2O6：Tb^3＋,Li^＋绿色荧光粉,并研究粉体的发光性质。发射光谱由位于黄绿区的4个主要荧光发射峰组成,峰值分别位于495,548,598,625nm,对应了Tb^3＋的^5D4→^7F6,^5D4→^7F5,^5D4→^7和^5D4→^7F3特征跃迁发射,548nm的发射最强。激发光谱表现从200—400nm的宽带,可以被近紫外光辐射二极管（near-ultraviolet light-emitting diodes,UVLED）管芯产生的350-410nm辐射有效激发。研究了Tb^3＋掺杂和电荷补偿剂对样品发光亮度的影响。Sr3B2O6：Tb^3＋,Li^＋是一种适用于白光LED的绿色荧光粉。     

钾原子中由四波,六波混频过程产生的相干辐射

当双光子共振激发钾原子于６Ｓ能级时，由光泵受激辐射，串级受激辐射参与的四波、六波混频以及电离复合的布居过程，产生了位于可见区的诸多相干辐射，文中对混频机制进行了分析和讨论，并对所测得的相干辐射进行了标识。     

钾原子中多种受激辐射参与的混频过程

当双原子共振激发钾原子于６Ｓ能级时,由光泵受激辐射和电离复合受激辐射参与的六波或四波混频,产生了位于紫外和紫区的诸多相干辐射、文中对多种混频机制进行了分析和讨论,并对所测得的相干辐射线进行了标识．     

电子俘获材料Eu,Sm：CaS荧光特性的研究

研究了电子俘获材料Eu,Sm:CaS在室温下的荧光激光发谱和荧光辐射谱,荧光激发谱由四个激发带构成,是由Eu^2 的4f^7→4f^55d跃迁和基质吸收所产生的,可见光激光发下的荧光辐射谱是由一个极强的宽带和两个极弱的窄带构成,紫外光激光发下的荧光辐射谱中不仅出现了以上三个辐射带,还出现了七个较强的窄带,这些荧光辐射带分别是由Eu2 的4f^65d→4f^7,Sm^3 的f→f,Eu^3 的f→f跃迁所产生的。研究还发现,当激剂浓度一定时,Eu^2 的辐射带明显比Sm^3 的辐射带强。     

电子俘获材料Eu,Sm∶CaS荧光特性的研究

研究了电子俘获材料Eu ,Sm∶CaS在室温下的荧光激发谱和荧光辐射谱。荧光激发谱由四个激发带构成 ,是由Eu2 + 的 4f7→ 4f55d跃迁和基质吸收所产生的。可见光激发下的荧光辐射谱是由一个极强的宽带和两个极弱的窄带构成 ,紫外光激发下的荧光辐射谱中不仅出现了以上三个辐射带 ,还出现了七个较强的窄带。这些荧光辐射带分别是由Eu2 + 的 4f65d → 4f7、Sm3 + 的 f→ f、Eu3 + 的 f→ f跃迁所产生的。研究还发现 ,当激剂浓度一定时 ,Eu2 + 的辐射带明显比Sm3 + 的辐射带强。     

Na(4D)+Na(3S)Na(4F)+Na(3S)碰撞能量转移截面

利用双光子吸收,将Na(3S)原子激发到4D态,测量了Na(4D)+Na(3S)Na(4F)+Na(3S)碰撞能量转移截面,因为直接由4F→3D的荧光不能探测,所以检测3D→3P级联荧光讯号。结合基态钠原子密度的测量,给出了截面值σ_4D→4F=1.3 x 10~(-14)±28％(cm~2)。     

Na原子中3S—4D双光子共振增强紫外相干辐射的观测和研究

用Na原子3S—4D双光子共振增强的受激超Raman散射、四波混频和光泵受激发射过程,获得230—340nm范围内两组紫外相干辐射,分析了这一系列紫外相干辐射的产生机制和谐线特性。     

Clean prediction of CP-violating processes psi, phi, and Gamma decay to KSKS and KLKL

The ratio of K(S)K(S) (K(L)K(L)) and K(L)K(L) production rates is calculated by considering K(0) - K(0) oscillation in J/psi --> K(0)K(0) decay. The theoretical uncertainty due to strong interaction in J/psi decay is completely canceled in the ratio; therefore, the absolute branching fractions of the CP-violating processes of J/psi --> K(S)K(S) and K(L)K(L) can be cleanly and model-independently determined in the case that J/psi K(S)K(L) decay is precisely measured. In the future tau-charm factory, the expected CP violating process of J/psi --> K(S)K(S) should be reached. It is important to measure J/psi to K(S)K(S) and K(S)K(L) decays simultaneously, so that many systematic errors will be canceled. More precise measurements are suggested to examine the predicted isospin relation in J/psi --> KK decays. All results can be extended to decays of other vector quarkonia, phi, psi(2S), and gamma(1S), etc.     

NiTi形状记忆合金相变过程的正电子湮没研究

采用正电子湮没技术研究了NiTi合金在降温和升温过程中缺陷和电子密度随温度的变化.在降温过程中,当温度从295K降至225K时,合金的电子密度nb随温度的降低而下降,在225K时降至最小;随后,nb随温度的降低而升高.当温度从295K降至221K时,合金缺陷的开空间随温度的下降而升高,在221K时达到最大值;随后,缺陷的开空间随温度的下降而下降.在升温过程中,当温度从25K升至253K时,合金的电子密度nb随温度的升高而降低,并在253K时达到最小;当温度从253K升至295K时,合金电子密度nb随温度的升高而升高.在相变临界温度点Ms=222K,Mf=197.2K,As=237.5K,Af=255.5K附近,合金的电子密度nb及合金缺陷的开空间均有异常的变化.     

The role played by hydrogen in the ionic thermocurrents of beryl

Abstract

Ionic thermocurrents (ITC) were measured in pink (morganite) and colourless (goshenite) samples of natural beryl from 77K up to 250K at a constant rate b = 0.1 Ks^?1. The spectra present three distinct bands, at 170K, 200K and 220K. The band at 200K predominates in the untreated crystals. After thermal treatments between 700K and 1300K, the ITC bands at 170K and 220K become prominent, masking the 200K band. The reduction of Fe³⁺ into Fe²⁺ in two distinct positions in the beryl lattice justify this observation. Infrared (IR) spectra show that treatments above 1000K remove water from the channels of the beryls. Ultraviolet (UV) irradiation of these thermally treated samples enhance the two bands at 170K and 220K.     

强磁场下Pt电阻温度传感器的磁致电阻效应研究

以Pt电阻温度传感器(Pt-111)为研究对象,研究了其在0～16T磁场下、4.2～300K温区内的磁致电阻效应.结果表明:Pt-111在0～16T场强、4.2～77K温区内,磁效应随场强的增加和温度的降低而明显升高,77～300K温区内温度计受磁场的影响较小,其中在16T下,4.2K和300K处的磁效应分别为48.2%和1.07%;在4.2-77K温区,Pt-111由磁阻引起的测量误差场强的升高和温度的降低而明显升高,在16T、4.2K处和16T、77K处的温度测量误差分别为18.3K和1.69K.Pt-111不推荐应用在77K以下的磁场环境.     

Proposed search for a(0)(0)(980)-f(0)(980) mixing in polarization phenomena

The K+ and K0 meson mass difference induces the mixing of the a(0)(0)(980) and f(0)(980) resonances, the amplitude of which, between the K+K- and K0(-)K(0) thresholds, is large in magnitude, of the order of m(K)m(2)(K0)sqrt[-m(2)(K+)] approximately sqrt[alpha] m(2)(K), and possesses the phase sharply varying by about 90 degrees. We suggest performing the polarized target experiments on the reaction pi(-)p-->etapi(0)n at high energy in which the fact of the existence of a(0)(0)(980)-f(0)(980) mixing can be unambiguously and very easily established through the presence of a strong jump in the azimuthal asymmetry of the etapi(0) S wave production cross section near the K(-)K thresholds. The presented estimates of the polarization effect to be expected in experiment are to a great extent model independent.     

Application of Kβ/Kα in selecting calibration standards for X-ray fluorescence analysis

A method for improving the accuracy in X-ray fluorescence spectroscopy analysis with pressed pellets was established through matching the calibration standards by the Kβ/Kα ratios. The Kβ/Kα ratios of four major elements (Al, Si, Ca, and Fe) were measured in 14 certified reference materials (CRMs) for geochemistry. The deviation of the biggest Kβ/Kα values relative to the smallest ones for the same element was from 1.52% (Si) to 20.98% (Al) when pressed pellets were used. The relative deviation of Kβ/Kα values for Ca was as high as 3.56% even for two soil CRMs (GBW07404 and GBW07408). X-ray diffraction analysis confirmed that the Ca elements in the two CRMs were in distinct phases, thereby leading to the different Kβ/Kα values. The Fundamental Parameter Method (FPM) results of two calibration strategies were compared. When one of the 14 CRMs was selected as unknown sample whereas the other 13 CRMs were used for calibration to determine Al₂O₃, SiO₂, CaO, and Fe₂O₃, the relative errors were 10.80%, 8.77%, 8.33%, and 10.91%, respectively. Another strategy, where only one CRM was used for calibration of samples with large errors, was adopted by matching Kβ/Kα values. The results of calibrating using CRM with similar Kβ/Kα values were more accurate than those with different Kβ/Kα values.     

Differential thermal analysis at high pressures— VIII: Phase behaviour of solid cyclopentanone,cyclopentanol, and cyclohexanone up to 3 KBAR

The phase behaviour of solid cyclopentanone, cyclopentanol, and cyclohexanone was investigated from 80 K to the melting temperature and up to 3 Kbar, using a low-temperature high-pressure differential thermal analysis apparatus. The melting temperature of cyclopentanone rises from 221.7 K at atmospheric pressure to 278 K at 2900 bar. No solid solid transition was observed. The melting temperature of cyclohexanone rises from 242.4 K at atmospheric pressure to 312 K at 2840 bar. Its well-known solid solid transition at atmospheric pressure (220.3 K) splits into two different solid solid transitions at elevated pressures. The melting temperature of cyclopentanol rises from 256 K at atmospheric pressure to 328 K at 2600 bar. Cyclopentanol exhibits two well-known solid solid transitions (236.4 K and 202.5 K at 1 atm), but an additional metastable form has been observed in the present work. the transition temperature being 195 K at 1 atm. Volume changes accompanying the phase transitions have been calculated using the Clausius Clapeyron equation.     

X射线衍射分析长期钾素盈亏对土壤含钾类矿物的影响

利用1991年—2013年国家紫色土肥力与肥料效益监测站长期定位试验的土壤样品,采用X射线衍射(XRD)光谱分析技术,研究了22年长期钾素投入亏缺和盈余处理中性紫色土壤钾素含量及含钾类矿物的演变特征。XRD图谱分析发现,长期钾素亏缺处理导致土壤云母、钾长石等含钾类原生矿物加速风化,表现为连续施肥22年<连续施肥12年<原始土壤,同时促进了蒙脱石的形成;长期钾素盈余处理土壤云母、钾长石等原生矿物风化程度虽得到有效缓解,但较原始土壤相比仍有明显风化。土壤含钾类粘土矿物的演变与原生矿物变化相似,长期钾素亏缺导致土壤粘粒中伊利石发生了明显崩解,且随着施肥年限的增加,粘粒中伊利石的含量随之减少,长期钾素盈余处理明显缓解了伊利石的风化进程;但是无论是钾素亏缺或盈余处理都出现土壤中伊利石的风化崩解,同时伴随蒙脱石等膨胀型矿物的形成,现有的钾素盈余水平也不能阻止土壤含钾类矿物的风化崩解。另外,长期钾素亏缺导致土壤中速效钾和缓效钾含量逐年降低,22年分别降低62.0%和37.4%;而钾素盈余处理提高了土壤速效钾含量,但缓效钾呈现下降趋势;土壤伊利石的风化程度和土壤缓效钾的演变趋势相吻合。表明中性紫色土壤中伊利石是土壤缓效钾的主要来源,长期钾素亏缺会造成土壤钾素枯竭和含钾类矿物的加速风化崩解,降低土壤供钾能力。     

Observation of B+ --> K0K+ and B0 --> K0K0

We report observations of the b --> d penguin-dominated decays B+ --> K0K+ and B0 --> K0K0 in 316 fb(-1) of e+ e- collision data collected with the BABAR detector. We measure the branching fractions B(B+ --> K0K+) = (1.61+/-0.44+/-0.09) x 10(-6) and B(B0 --> K0K0 = (1.08+/-0.28+/-0.11) x 10(-6) and the CP-violating charge asymmetry A(CP)(K0K+) = 0.10+/-0.26+/-0.03. Using a vertexing technique previously employed in several analyses of all-neutral final states containing kaons, we report the first measurement of time-dependent CP-violating asymmetries in B0 --> K(S)0K(S)0, obtaining S = -1.28(-0.73-0.16)(+0.80+0.11) and C = -0.40+/-0.41+/-0.06. We also report improved measurements of the branching fraction B(B+ --> K0 pi+) = (23.9+/-1.1+/-1.0) x 10(-6) and CP-violating charge asymmetry A(CP)(K0 pi+) = -0.029+/-0.039+/-0.010.     

Positron annihilation in the quenched and electron-irradiated NiSb intermetallic compound

Samples of the near equiatomic NiSb compound were irradiated by 3 MeV electrons at 20 K or quenched from 1103 K and 1333 K and subsequently annealed isochronally. The behaviour of defects created by quench or irradiation were studied by the positron annihilation technique. Only one recovery stage was found around 425 K for quenched specimens, but two distinct stages (100 K and 425 K) were observed after irradiation. The 425 K stage is ascribed to the migration of Ni vacancies giving dislocation loops. The recombination of mobile interstitials with vacancies after irradiation is assumed to occur between 100 K and 250 K. Doppler broadening and lifetime variations of positrons as a function of the measuring temperature in these irradiation samples are discussed.