侧边抛磨光纤中传输光功率变化的实验研究

针对轮式光纤侧边抛磨法制备的侧边抛磨光纤,研究了在侧边抛磨区覆盖不同折射率的材料时,侧边抛磨光纤传输光功率随覆盖材料折射率变化的特性.研究表明,侧边抛磨光纤中传输光功率会随抛磨区覆盖材料折射率的变化而改变.当覆盖材料的折射率小于1.437 8时,光功率损耗近似为零；而当覆盖材料的折射率逐渐增大接近1.452 1时,光功率损耗迅速增大至最大值.当覆盖材料的折射率由1.453 2逐渐增大时,光功率损耗由最大值逐渐减小,最终维持在某个确定的值.侧边抛磨光纤并不是抛磨深度越深,损耗就越大.侧边抛磨光纤中传输的光功率存在波长相关损耗(WDL）.实验结果与理论结论符合较好.     

侧边抛磨区材料折射率对光纤光栅波长的影响

针对轮式光纤侧边抛磨法,研究了在侧边抛磨光纤光栅抛磨区覆盖不同折射率的材料时,侧边抛磨光纤光栅Bragg波长随外界折射率的改变而变化的特性.理论计算与实验结果都表明,侧边抛磨光纤光栅Bragg波长会随抛磨区覆盖材料折射率的增大向长波长方向偏移；侧边抛磨面离光栅区纤芯表面越近,覆盖材料折射率对波长偏移的影响越大.实验指出,当侧边抛磨区覆盖材料的折射率从1.389 7变到1.447 9时,Bragg波长将会发生1.402 nm的偏移.用轮式光纤侧边抛磨法制备的侧边抛磨光纤光栅可应用于光纤光栅的波长调谐或传感器.     

用于向列相液晶取向测量的侧边抛磨光纤传感特性研究

向列相液晶(NLC)的取向变化对外界环境敏感,已被作为生物传感的敏感中介材料。研究了侧边抛磨光纤(SPF)用于NLC取向变化测量的传感特性,探索利用SPF测量液晶取向变化的可行性与适用范围。将液晶折射率的理论公式与SPF传输光功率实验数据结合,得到了经验理论关系。实验中设计用机械旋转法改变SPF抛磨面附近NLC的取向。实验结果表明,NLC的取向变化导致SPF传输光功率的变化。以液晶指向矢方位角为表征的NLC的取向变化从0°增大至90°,SPF传输光功率随之增大28.10dB;在0°~30°范围内,SPF传输光功率与NLC的取向变化具有线性关系,光纤传输光功率对取向角度变化的响应平均约为0.359dB/(°)。研究表明SPF可以用于NLC的取向变化的测量并且获得了适用范围,这为基于液晶取向变化的SPF生物传感器的研究提供了参考。     

侧边抛磨光纤波导传输特性的理论分析

在建立侧边抛磨光纤D型光纤边界条件的基础上,用三维有限差分光束传输法计算和分析了侧边抛磨光纤器件的光功率衰减随光纤的侧边抛磨长度、光纤侧边抛磨后剩余包层的厚度、以及填充聚合物材料折射率三个参量变化的特性.结果表明,侧边抛磨光纤器件的光功率衰减随着抛磨长度的增加而增大;当抛磨长度等于9 mm时,光功率衰减随着剩余包层厚度的增大而单调递减.而当抛磨长度大于9 mm时,剩余包层厚度小于3 μm的范围内,光衰减随着剩余包层厚度的增加出现振荡;当聚合物折射率与纤芯折射率相同时,光功率衰减最大.     

侧边抛磨光纤光栅的数值模拟和实验研究

本文设计并建立侧边抛磨光纤Bragg光栅的光学模型,通过改变剩余包层的厚度以及抛磨区材料的折射率,模拟计算光栅谐振波长的偏移量以及光栅光谱反射率的变化.实验结果表明,当抛磨区材料折射率越接近光纤纤芯折射率,以及抛磨程度越深(3μm以内),抛磨区材料的折射率的微小变化也会引起光栅谐振波长与光栅光谱反射率明显变化.     

侧边抛磨光子晶体光纤传输特性理论分析

在建立了侧边抛磨光子晶体光纤D型光纤光学模型的基础上,采用三维有限差分光束传输法计算和分析了侧边抛磨光子晶体光纤的光功率衰减、传输模场等与抛磨区几何参数(剩余半径、轴向旋转角、侧边抛磨区长度)的变化关系。结果表明,当剩余半径大于-1.5μm时,侧边抛磨光子晶体光纤的光功率衰减随着剩余半径的减小而增大;光沿着光纤传输时,基模光传输到抛磨区光功率发生衰减,经过抛磨区后,基模光功率出现回升。沿不同的轴向旋转角方向侧边抛磨,剩余半径大于0.5μm时,侧边抛磨光子晶体光纤的光功率衰减随着剩余半径变化的差别较小;剩余半径足够小时,光沿着光纤传输到抛磨区时,会产生高阶模,沿轴向旋转角θ=30°侧边抛磨时基模模场分布分散程度最大,且在抛磨区产生更多的高阶模。剩余半径大于1.5μm时,抛磨光纤长度变化对输出光功率影响很小,剩余半径小于1.5μm时,输出光功率透射率随着光纤抛磨长度的变化呈振荡变化。分析结果可为侧边抛磨光子晶体光纤的器件制作提供理论指导。     

基于光纤侧边抛磨技术的醋酸浓度光纤传感器

演示了两种利用光纤侧边抛磨技术制备的用于醋酸浓度检测的光纤传感器.其中一种光纤传感器采用轮式抛磨法对光纤光栅的光栅区包层进行侧边抛磨加工而成,将醋酸溶液覆盖于光纤光栅的抛磨区,利用侧边抛磨光纤光栅反射峰波长的变化对醋酸浓度进行测量;另一种光纤传感器采用轮式抛磨法对普通单模光纤包层进行侧边抛磨加工而成,将醋酸溶液覆盖于光纤抛磨区,利用抛磨光纤插入损耗的变化对醋酸浓度进行测量.两种光纤传感器的实验都表明:光纤包层抛磨表面与纤芯的距离越小,测量分辨率越高.剩余包层厚度为 0 μm 的侧边抛磨光纤光栅传感器测量醋酸溶液浓度分辨率为6.67%;剩余包层厚度为O.5μm 的侧边抛磨光纤传感器测量醋酸溶液浓度分辨率为0.55%.     

基于侧边抛磨光纤的全光纤在线光功率监测器

应用侧边抛磨光纤的倏逝波原理,用光电探测器对光纤侧边抛磨区出射光能进行监测,根据理论和实验分析光纤侧边抛磨区出射光能分布,将具有特殊U型侧边抛磨形状和适当抛磨深度的侧边抛磨光纤与光电探测器精密微封装,制成基于侧边抛磨光纤的全光纤在线光功率监测器。测试表明:此全光纤在线光功率监测器对光纤传输的光功率响应特性好,监测器光电转换效率可达200 mA/W以上。测试了器件的插入损耗、波长相关损耗、波长相关光电转换效率和偏振相关损耗等。其波长相关损耗和偏振相关损耗分别为0.3 dB(1 520 nm～1 620 nm)和0.07 dB(1 310nm)。此器件具有对光纤纤芯无破坏、光路中无插入元件、可与光纤系统直接熔接等诸多优点。     

基于侧边抛磨光纤表面等离子体共振的折射率和温度传感研究

用轮式侧边抛磨法制作侧边抛磨光纤,通过磁控溅射法溅射金膜制成侧边抛磨光纤表面等离子体共振(SPR)传感器,并通过理论和实验对传感器的折射率灵敏度以及温度特性做了深入研究。结果表明表面等离子体共振波长随待测样品折射率的增大向长波长方向漂移,平均折射率灵敏度为4.1×103 nm/RIU(RIU为单位折射率),高于已报道的结果;共振波长随待测样品温度的升高向短波长方向漂移,平均温度灵敏度为0.36nm/℃,故该光纤SPR传感器具有更强抗温度漂移能力和更高的高折射率灵敏度,其在生物化学传感领域有重要的应用。     

向列相液晶中弱光引致各向异性衍射图样的研究

研究了弱线偏振光(≈0.16 W/cm²)通过垂直排列C₆₀掺杂的向列相液晶(5CB)薄膜的远场衍射图样.基于取向光折变机理,二波耦合使液晶分子进行二次取向之后,强度为高斯分布的光束通过样品时将形成高斯分布的空间电荷场,偏振光束通过样品时将产生偏振衍射图样.衍射图样的轮廓是同心圆环,在垂直于光的偏振方向有对称缺口.改变入射光的偏振方向可以看到衍射图样也随之改变, 有效非线性折射率系数n₂≈0.3cm²/W 关键词： 向列相液晶 取向光折变效应 自相位调制 衍射图样     

含偶氮苯类星型液晶化合物的光致变色

研究了一种以Si为中心外围含4个丁氧基偶氮苯液晶基元的星型液晶化合物Si(AZO)4的光致变色规律,利用紫外-可见吸收光谱研究了在氯仿和四氢呋喃溶液中的量子产率、光致变色和光回复反应.实验结果表明样品在各溶液的光致变色和光回复反应均为一级动力学反应,并求算了光致变色反应的正、逆反应速率常数均为10-1s-1数量级,是偶氮类侧链液晶高分子的速率常数的107倍,表明Si(AZO)4的星型结构对末端偶氮基团的吸收光谱没有明显影响,产物具有类似小分子的光致变色性,并且Si(AZO)4的正、逆反应速率常数比值小于液晶基元的比值,表明具有更好的光可逆性,有望作为光控开关和新型信息功能材料.     

The effect of heating rate on the structural and electrical properties of sol-gel derived Al-doped ZnO films

Al-doped ZnO (AZO) films are prepared by sol-gel method with a proper annealing procedure. For the first time, we find that the heating rate which is normally neglected during the post annealing process plays a significant role in improving AZO properties. The AZO film with nanorod structure is obtained by using a rapid heating rate. The AZO nanorods can provide a faster conduction pathway for charge transport due to the high crystal quality and thus enhance the conductivity of the film significantly. After hydrogen treatment, the AZO nanorod film exhibits a minimum resistivity of 1.4 × 10⁻³ Ω cm. This approach to the preparation of AZO nanorods by a simple rapid annealing process may be helpful for the development of sol-gel-derived TCO films.     

Opto-Electronic Properties of MBE-Grown ZnSSe Thin Films on ITO Substrates

The opto-electronic properties of molecular-beam-epitaxy (MBE)-grown ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W and three orders of visible rejection power were demonstrated. The results of d.c. resistivity measurements revealed that the resistivity of the ZnSSe thin films decreased as the crystal size increases and reaches a value of 4.3 × 10¹¹ Ω cm for a thin film grown at the optimized substrate temperature of 290°C. The results of a.c. impedance measurements performed in the frequency range of 40 to 4000 Hz further indicated that the impedance of this alloy thin film can provide a good match with the liquid crystal layer of a liquid crystal light valve for UV imaging applications.     

Optically tunable plasmonic color filters

We fabricated sub-wavelength patterned gold plasmonic nanostructures on a quartz substrate through the focused ion beam (FIB) technique. The perforated gold film demonstrated optical transmission peaks in the visible range, which therefore can be used as a plasmonic color filter. Furthermore, by integrating a layer of photoresponsive liquid crystals (LCs) with the gold nanostructure to form a hybrid system, we observed a red-shift of transmission peak wavelength. More importantly, the peak intensity can be further enhanced more than 10% in transmittance due to the refractive index match of the media on both sides of it. By optically pumping the hybrid system using a UV light, nematic−isotropic phase transition of the LCs was achieved, thus changing the effective refractive index experienced by the impinging light. Due to the refractive index change, the transmission peak intensity was modulated accordingly. As a result, an optically tunable plasmonic color filter was achieved. This kind of color filters could be potentially applied to many applications, such as complementary metal-oxide-semiconductor (CMOS) image sensors, liquid crystal display devices, light emitting diodes, etc.     

热处理温度对ZnO∶Al薄膜性能的影响

利用溶胶-凝胶技术在玻璃衬底上制备了ZnO∶Al薄膜,表征了薄膜的结构、光透过和光致发光特性,探讨了热处理温度对薄膜晶体结构和光学性质的影响.结果表明,在热分解温度400 ℃和退火温度600 ℃时,ZnO∶Al薄膜的C轴择优取向明显,透过率较高.在热处理温度400 ℃情况下,激发波长340 nm的光致发光谱中有三个发光中心,紫外发光强度随退火温度的升高先升高后下降,500 ℃时发光强度最强.其它两个发光峰的强度随退火温度的升高而降低甚至消失.激发波长不同,ZnO∶Al薄膜的发光中心和强度均发生变化.     

染料掺杂聚合物分散胆甾相液晶薄膜激光特性研究

采用激光染料DCM、向列相液晶TEB30A、手性剂S-811、聚乙烯醇(PVA), 通过微胶囊法制备了聚合物分散胆甾相液晶薄膜, 测量激光辐射谱, 研究了其激光辐射机理和温度调谐特性. 利用正交偏光显微镜观察器件织构, 看到液晶微滴分散均匀, 尺寸较大, 约为80 μm, 并且微滴中液晶分子呈现平面态排列织构. 以532 nm的Nd:YAG固体激光器作为抽运源, 测得在634.5 nm和680.2 nm波长处出现了尖锐的激光辐射峰, 线宽分别约为0.25 nm, 0.29 nm. 并与染料掺杂胆甾相液晶激光器件进行比较. 升高器件温度, 其输出激光波长蓝移, 获得666.7 nm至643.9 nm共22.8 nm的调谐范围. 由实验结果分析得出, 激光辐射机理为光子禁带末端激光, 出射波长分别对应光子禁带的两个边沿.     

Ultraviolet-light-treated polyimide alignment layers for polarization-independent liquid crystal Fresnel lenses

The surface energy of a conventional homeotropic polyimide (PI) alignment layer was altered via ultraviolet (UV) light irradiation, and the pretilt angle of the PI was changed along with the surface energy. The surface energy can be controlled by either UV exposure time or irradiation intensity. A switchable liquid crystal Fresnel lens (LCFL) was created by the UV-treated alignment layers to form a Fresnel zone-distribution hybrid alignment, vertically aligned and hybrid aligned LC in the odd and even zones, respectively. The LCFL was made polarization-independent by circular buffing, and it had a diffraction efficiency of ∼22% at a low driving voltage of ∼1.2 V.     

Effect of Al doping on microstructure and optical band gap of ZnO thin film synthesized by successive ion layer adsorption and reaction

Thin films of pure and aluminum-doped zinc oxide (AZO) were deposited on glass substrates from ammonium zincate bath following a chemical dipping technique called successive ion layer adsorption and reaction (SILAR). Characterization techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-rays (EDX) were used to investigate the effect of Al doping on the microstructure of AZO films. Particle size analysis using X-ray line broadening shows marginally increasing trend with increasing Al impurity. The average particle size for pure ZnO is 22.75 nm. It increases to 24.26 nm for 1% AZO film and 25.13 nm for 2% AZO film. Incorporation of Al was confirmed from elemental analysis using EDX. SEM micrograph shows that pure ZnO particles are spherical shaped. However, AZO films show particles with off-spherical shape with compact interconnected grains. The value of band gap for pure ZnO is 3.229 eV and it increases to 3.29 eV for 1% AZO indicating a blue-shift for 1% AZO film. However, for 2% AZO film, a decrease in band gap compared to pure ZnO is observed indicating a red-shift of fundamental absorption edge. Electrical resistance shows an initial decrease with increasing Al content. With further enhancement of Al incorporation, the resistance increases.     

Transport characteristics of thermally degraded ZnO films doped with Al

The thermal degradation characteristics of Al doped ZnO (AZO) films, which were prepared by radio frequency magnetron sputtering at room temperature and subsequently annealed in air, were examined by making comparisons with those of the as-deposited and the vacuum-annealed AZO films. AZO films annealed in air at temperature higher than 300 °C exhibited severely degraded conductivity due to the decrease of carrier concentration and Hall mobility, which could be interpreted as grain boundary scattering from the thermally activated mobility behavior. Experimental observations, that vacuum-annealing of the as-deposited AZO film led to substantial reduction in carrier concentration and that subsequent vacuum-annealing of the air-annealed AZO film could not restore the carrier concentration unlike the restoration of Hall mobility up to 80%, led to a perception that substantial amount of free carriers in the as-deposited AZO film were generated from oxygen vacancies. It was proposed that ratios of the barrier height to the Fermi level, which were determined by taking into account the non-parabolic nature of the conduction band, could be used as a measure for the influence of grain boundary scattering on the overall electron transport mechanism in AZO films.     

A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film

This paper studies the wet etching behavior of AZO (ZnO:Al) transparent conducting film with tetramethylammonium hydroxide (TMAH). The optimum optoelectronic film is prepared first using designated RF power, film thickness and controlled annealing heat treatment parameters. The AZO film is then etched using TMAH etchant and AZ4620 photoresist with controlled etchant concentration and temperature to examine the etching process effect on the AZO film optoelectronic properties. The experimental results show TMAH:H₂O = 2.38:97.62 under 45 °C at the average etch rate of 22 nm/min as the preferred parameters. The activation energy drops as the TMAH concentration rises, while the etch rate increases along with the increase in TMAH concentration and temperature. After lithography, etching and photoresist removal, the conductivity of AZO film dramatically drops from 2.4 × 10⁻³ Ω cm to 3.0 × 10⁻³ Ω cm, while its transmittance decreases from 89% to 83%. This is due to the poor chemical stability of AZO film against AZ4620 photoresist, leading to an increase in surface roughness. In the photoresist postbaking process, carbon atoms diffused within the AZO film produce poor crystallinity. The slight decreases in zinc and aluminum in the thin film causes a carrier concentration change, which affect the AZO film optoelectronic properties.