FeBN (N≤3)团簇的结构与磁性

基于第一性原理,利用密度泛函理论中的广义梯度近似(GGA)对FeBN(N≤3)团簇进行了结构优化、能量和频率的计算,得到了FeBN(N≤3)团簇在不同自旋多重度下的平衡结构并确定了团簇的基态构型.结果表明,FeBN(N≤3)基态团簇的自旋多重度分别为4、3、2.我们对FeBN基态团簇的磁性做了系统的研究,得出了Fe原子磁矩和团簇总磁矩随团簇尺寸增大而减小的结论.     

RuSin（n=1～6）团簇的结构、稳定性和电子性质的密度泛函研究

运用杂化密度泛函理论方法在(U)B3LYP/LanL2DZ水平研究了RuSin(n=1~6)团簇体系的稳定结构及电子性质．结果发现：RuSin(n=1~6)团簇基本保持了纯硅团簇的框架.对原子平均束缚能和分裂能的计算表明,RuSi6团簇是RuSin(n=1~6)团簇中热力学稳定性最强的.对自然电荷分布的研究结果发现,RuSin(n=2,4～6)团簇的最低能结构出现电荷反转现象. HOMO-LUMO能隙的研究结果表明掺入钌原子后团簇的化学活性增强了,且RuSi的化学活性是RuSin(n=1~6)团簇最强的。通过对团簇磁矩的研究发现,RuSi和RuSi3团簇具有了磁性,其余团簇的总磁矩为零,且RuSin(n=1～6)团簇中各原子对团簇总磁矩的贡献不同.     

FeBN(N≤6)团簇的结构与磁性

利用密度泛函理论中的广义梯度近似(GGA),在考虑自旋多重度后,预测了FeBN(N≤6)团簇的基态结构.结果表明基态团簇的自旋多重度分另4为4,3,2,1,2和1,其中FeB4团簇比较稳定.同时对FeBN(N≤6)基态团簇的磁性做了系统地研究,发现除了FeB5团簇外,FeBN(N≤6)团簇的总磁矩和Fe原子磁矩随团簇尺寸的增大而减小.     

RuSin±(n=1~6)团簇的几何结构、电子性质与磁性的理论研究

运用杂化密度泛函理论在(U)B3LYP/LanL2DZ水平研究了RuSi_n~±(n=1～6)团簇的几何构型、电子性质和磁性.结果发现:RuSi_n~±(n=1～6)团簇除n=5外,基本保持了RuSi_n(n=1～6)团簇的基本框架.RuSi₂~+团簇和RuSi₃~-团簇分别是RuSi_n~+和RuSi_n~-(n=1～6)团簇最低能结构中热力学稳定性最强的团簇.在RuSi_n~+和RuSi_n~-(n=1～6)团簇中Ru原子比Si原子对体系电荷贡献大.HOMO和LUMO的研究结果说明,RuSi_n~-(n=1～6)团簇的LUMO对电子没有亲和力.RuSi~+是RuSi_n~+(n=1～6)团簇中化学稳定性最强的团簇.而RuSi₅~+团簇是化学活性强弱的团簇.RuSi_n^±,0(n=1～6)团簇的极化率...     

RuSi_n(n=1～6)团簇的结构、稳定性和电子性质的密度泛函研究

运用杂化密度泛函理论方法在(U)B3LYP/Lan L2DZ水平研究了Ru Sin(n=1~6)团簇体系的稳定结构及电子性质.结果发现:Ru Sin(n=1~6)团簇基本保持了纯硅团簇的框架.对原子平均束缚能和分裂能的计算表明,Ru Si6团簇是Ru Sin(n=1~6)团簇中热力学稳定性最强的.对自然电荷分布的研究结果发现,Ru Sin(n=2,4~6)团簇的最低能结构出现电荷反转现象.HOMO-LUMO能隙的研究结果表明掺入钌原子后团簇的化学活性增强了,且Ru Si的化学活性是Ru Sin(n=1~6)团簇最强的.通过对团簇磁矩的研究发现,Ru Si和Ru Si3团簇具有了磁性,其余团簇的总磁矩为零,且Ru Sin(n=1~6)团簇中各原子对团簇总磁矩的贡献不同.     

密度泛函理论研究Bn Ni(n=6-12)团簇的结构和磁性

基于第一性原理,用密度泛函理论中的广义梯度近似(generalized gradient approximation,GGA)方法,在充分考虑自旋多重度的前提下,优化并得到了Bn(n=6一12)和BnNi(n=6-12)团簇的平衡构型,按照能量最低原理确定其基态结构.Bn团簇的计算结果与已有的理论结果相一致.当Ni原子掺杂在Bn团簇中,B12Ni团簇的基态结构为平面结构,其余均为三维结构.基态结构的自旋多重度除了n=8以外呈现2,l交替的规律.计算团簇基态结构的平均结合能(Eb)、团簇能量的二阶差分(△2 E)和能隙(HOMO.I.UMO,gap)均表明,l=8为B.Ni(,l=6一12)团簇的幻数,即B8Ni团簇较相邻团簇稳定.计算团簇的磁矩表明B8Ni团簇磁矩最大(2цB),团簇总磁矩和平均磁矩随团簇尺寸增大呈现奇偶振荡趋势且磁矩主要由Ni原子的3d轨道提供.     

Si_n(n≤30)团簇光谱与电子性质的密度泛函理论研究

采用密度泛函理论对Sin(5≤n≤30)团簇的吸收光谱,能隙(HOMO-LUMO)及电子性质进行了模拟分析.硅团簇的吸收光谱计算采用含时密度泛函理论的ALDA内核.结果表明,随着Sin(5≤n≤30)团簇尺寸的增大,团簇的吸收光谱逐渐红移,表现出较强的量子尺寸效应.团簇Sin(5≤n≤30)的吸收峰主要集中在红外光区.团簇的吸收峰主要受团簇的原子个数和电子结构影响.     

Nb_2Si_n~-(n=1～6)团簇的几何构型、电子性质和磁性的理论研究

运用密度泛函方法在(U)B3LYP/LanL2DZ水平上研究了Nb2Sin-(n=1~6)团簇的几何结构和电子性质.结果发现Nb2Sin-(n=1~6)团簇只是在相应的Nb2Sin团簇的结构基础上发生了微小畸变.其中Nb2Si-6团簇结构变化较为严重.对平均束缚能和分裂能的研究发现,Nb2Sin-(n=1~6)团簇的平均束缚能和分裂能均明显高于相应的Nb2Sin团簇,表明增加一个电子可以提高Nb2Sin(n=1~6)团簇的稳定性.通过对最低能构型的分裂能的研究发现,Nb2Si-3团簇和Nb2Si3团簇分别是Nb2Sin-和Nb2Sin(n=1~6)团簇中所有最低能构型中最稳定的.对电荷自然布局的研究发现,在Nb2Sin-(n=1~6)团簇中出现了电子反转.而对于Nb2Sin(n=1~6)团簇,当n=4~6时出现电子反转现象,n=1~2时电子转移符合常规.对HOMO-LUMO能隙的研究结果表明,除了n=1,6外,其余Nb2Sin-(n=2~5)团簇最低能结构的HOMO-LUMO能隙均小于相应的Nb2Sin团簇,说明在这些团簇中增加一个电子增强了团簇的化学活性,但是当n=1、6时增加一个电子,该团簇的化学活性反而降低了.对于Nb2Sin-(n=1~6)团簇来讲,Nb2Si-2和Nb2Si-5团簇分别成为Nb2Sin-(n=1~6)团簇中化学稳定性最强和化学活性最强的.且Nb2Sin-(n=1~6)团簇呈现半导体属性.对磁矩的研究结果表明,Nb2Sin-(n=1~6)团簇的最低能结构的总磁矩均为1.00μB,两个Nb原子的局域磁矩方向,除了Nb2Si5-团簇有一个铌原子与总磁矩相反外,其余均与总磁矩方向相同.说明各团簇中两个铌原子和硅原子对磁矩的贡献不同,方向也不完全相同.     

(CoO)_n(n≤6)合金团簇的结构和磁性理论研究

采用密度泛函理论中的广义梯度近似(DFT-GGA)对(CoO)_n(n≤6)合金团簇进行了系统的几何、电子结构和磁性质研究.研究结果表明(CoO)n(n≤6)团簇最稳定结构除(CoO)6团簇为三维立体结构外,其余团簇均呈二维平面结构,且(CoO)_n(n=1,2,3,4和6)结构均表现明显的钴氧分离特征,而(CoO)5团簇表现明显的Co—Co聚合和O—O分离特征.团簇的总磁矩在n=1,3,4时,以3μB为单元成倍增长,(CoO)5团簇显著降低,减小至1μB,(CoO)6团簇又有所增加,增大至6μB.(CoO)n(n≤6)团簇磁性变化的起因也从电荷转移、磁性耦合、电子差分密度和态密度进行了详细阐释.     

(CoO)n (n ≤ 6)合金团簇的结构和磁性理论研究

采用密度泛函理论中的广义梯度近似(DFT-GGA)对(CoO)n (n≤6)合金团簇进行了系统的几何、电子结构和磁性质研究. 研究结果表明(CoO)n (n≤6)团簇最稳定结构除(CoO)6团簇为三维立体结构外, 其余团簇均呈二维平面结构, 且(CoO)n (n=1, 2, 3, 4和6)结构均表现明显的钴氧分离特征, 而(CoO)5团簇表现明显的Co-Co聚合和O-O分离特征. 团簇的总磁矩在n=1, 3, 4时, 以3 μB为单元成倍增长, (CoO)5团簇显著降低, 减小至1 μB, (CoO)6团簇又有所增加, 增大至6 μB. (CoO)n (n≤6)团簇磁性变化的起因也从电荷转移、磁性耦合、电子差分密度和态密度进行了详细阐释.     

Electronic excitation and thermal effects in alkali-halide cluster anions

We have observed electronically excited states in alkali-halide cluster anions with one excess electron. Using photoelectron spectroscopy, we have found two narrow states in (KI)-2, (NaI)-2, and (NaCl)-2, consistent with a dipole-bound electron, while larger cluster anions exhibit a single broad excited state. In the larger systems, electronic excitation is often accompanied by vibrational excitation and thus a change in cluster temperature. Such temperature changes affect cluster structure and in some cases lead to rapid thermal isomerization.     

Solvated electrons in very small clusters of polar molecules: (HF)(3)(-)

Photoelectron spectra of (HF)(3)(-) reveal coexistence of two anionic isomers with vertical electron detachment energies (VDE) of 0.24 and 0.43 eV. The results of electronic-structure calculations, performed at the coupled cluster level of theory with single, double, and noniterative triple excitations, suggest that the two isomers observed experimentally are an open, zigzag, dipole-bound anion and an asymmetric solvated electron, in which the dipole-bound anion of (HF)(2) is solvated by one HF monomer at the side of the excess electron. The theoretical VDE of 0.21 and 0.44 eV, respectively, are in excellent agreement with the experimental data.     

Anions of xenon clusters bound by long-range electron correlations

In contrast with the single atom, atomic van der Waals clusters can form stable anions where the excess electron is bound due to long-range correlations with the electrons of the cluster. We report on extensive all-electron many-body ab initio studies on Xe clusters. Three-dimensional, planar, and linear structures of the clusters are investigated and compared. In particular, we find that the minimal number of Xe atoms in the cluster required to form a stable anion is 5 independently of the dimensionality of the cluster. We provide electron affinities for clusters made of 5, 6, and 7 atoms in all dimensions and find that the planar clusters form the most stable anions. The Dyson orbitals of the excess electrons are computed and analyzed.     

Are HBO− and BOH− electronically stable?

The binding of an excess electron to HBO and BOH was studied at the coupled cluster level of theory with single, double and non-iterative triple excitations and with extended basis sets to accommodate the loosely bound excess electron. The bent BOH molecule, with a dipole moment of 2.803 D, binds an electron by 39cm^?1, whereas the linear HBO tautomer possesses a similar dipole moment (2.796 D) yet binds the electron by less than 1 cm^?1. It is therefore likely that HBO^? is not stable when rotational energies are included whereas BOH^? is for low rotational quantum numbers.     

Electron attachment to strongly polar clusters

Electron localization is studied in formamide cluster anions. The isolated formamide molecule has a large dipole moment and its clusters can give birth to multipole-bound anions as well as valence anions. The vertical valence electron affinity of the isolated molecule is determined by electron transmission spectroscopy. The anion formation process is studied as a function of cluster size with Rydberg electron transfer spectroscopy. DFT calculations of the neutral and negatively-charged cluster structures show that the anion excess electron localizes on a single molecule. The adiabatic valence electron affinity of isolated formamide is deduced from the observation of the cluster size threshold for valence attachment.     

Investigation of the charge distribution in small cluster ions Ar<Stack><Subscript>13</Subscript><Superscript>+</Superscript></Stack> and Ar<Stack><Subscript>19</Subscript><Superscript>+</Superscript></Stack>

The results of ab initio studies of the atomic and charge structure of small clusters and cluster ions formed by 13 and 19 argon atoms are reported. It was found that the icosahedral atomic structure is energetically the most favorable for such clusters. The calculations demonstrate that when a single electron is removed from a cluster, the excess positive charge is distributed primarily over the surface of the formed cluster ion.     

Impact of ice structure on ultrafast electron dynamics in D2O clusters on Cu(111)

The structure of D2O clusters on a Cu(111) surface and the femtosecond dynamics of photoexcited excess electrons are investigated by low-temperature scanning tunneling microscopy and two-photon photoemission spectroscopy. Two types of amorphous ice clusters, porous and compact, which exhibit characteristic differences in electron dynamics, are identified. By titration with Xe we show that in both structures solvated electrons preferentially bind on the cluster surface.     

Negative ion photoelectron spectroscopy of 2,2’-bithiophene cluster anions, (2T)n - (n = 1–100)

Cluster anions of 2,2’-bithiophene, (2T)_n^-, were produced up to n ∼500 in the gas-phase. The energetics of the excess electron in the (2T)_n^- clusters with n =1-100 were explored by negative ion photoelectron spectroscopy. When the vertical detachment energies (VDEs) obtained from the photoelectron spectra were analyzed by a plot against n^-1/3, it has been revealed that the excess electron trapping level thus extrapolated is located at ∼0.8 eV below the conduction band minimum (i.e. LUMO) of the 2T thin film. The large slope of the VDEs vs. n^-1/3 plot suggests that the neutral 2T molecules surrounding the anion core take non-planar twisted conformations with permanent dipole moments, resulting in the exceedingly deep trapping of the excess electron in the 2T cluster anions.     

Electron distribution and intracluster reaction in [Nan(CS2)2]- negative ion clusters

We have studied excess electron distributions of binary cluster negative ions consisting of sodium atoms and carbon disulfied molecules, Na_n(CS₂)₂ ^- (n= 1 and 2) by using photoelectron spectroscopy and quantum chemical calculations based on the density functional theory (DFT). The photoelectron spectra indicate the existence of at least two isomers for both n=1 and 2 anions. From the DFT calculations, mainly two types of isomers are found to coexist in the Na(CS₂)₂ ^-; one has a van der Waals (vdW) type CS₂ dimer core and another has a covalently bonded C₂S₄ core, both of which were known for CS₂ molecular cluster anions. In the latter isomers, the C₂S₄ portion possesses almost two electrons, which is caused by the valence electron transfer from the Na atom. Also for n=2, we found the isomers of vdW and covalently bonded types. In the isomers with covalently bonded core, the C₂S₄ portion has more than two electrons, an excess electron and double valence-electron transfer from both of the sodium atoms. Electronic supplementary material to this article is available at and accessible for authorized users.     

Self-trapping of single and paired electrons in Ge2Se3

We report the theoretical prediction of single and paired electron self-trapping in Ge(2)Se(3). In finite atomic cluster, density functional calculations, we show that excess single electrons in Ge(2)Se(3) are strongly localized around single germanium dimers. We also find that two electrons prefer to trap around the same germanium dimer, rupturing a neighboring Ge-Se bond. Localization is less robust in periodic, density functional calculations. While paired electron self-trapping is present, as shown by wavefunction localization around a distorted Ge-Ge dimer, single-electron trapping is not. This discrepancy appears to depend only on the boundary conditions and not on the exchange-correlation potential or basis set. For single- and paired-electron trapping, we report the adiabatic barriers to motion and we estimate hopping rates and freeze-in temperatures. For the single trapped electron, we also predict the (73)Ge and (77)Se hyperfine coupling constants.